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WO/2024/118288A1 |
Embodiments of the disclosure provided herein include an apparatus and method for processing a substrate in a plasma processing system. The apparatus includes a pulse voltage (PV) waveform generator comprising at least one synchronizatio...
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WO/2024/118163A1 |
An insulator that has a lattice is disclosed. The insulator may have a shaft with two ends. The lattice may be disposed on the outer surface of the shaft. In some embodiments, one or more sheaths are used to cover portions of the shaft. ...
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WO/2024/118289A1 |
Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator havin...
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WO/2024/119161A1 |
Embodiments of substrate supports for process chambers are provided herein. In some embodiments, a substrate support for a process chamber includes: a pedestal having a support surface for supporting a substrate, one or more heating elem...
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WO/2024/117614A1 |
A coating method for semiconductor equipment according to the present invention comprises the steps of: (a) preparing metal powder having the same composition as a base material as a coating material; and (b) melting the coating material...
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WO/2024/118847A1 |
This disclosure pertains to pedestal assemblies for supporting wafers in semiconductor manufacturing tools and chambers. Such pedestal assemblies may have a pedestal base that is configured with an internal plenum volume having a plurali...
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WO/2024/116836A1 |
This electron beam generation apparatus comprises: an ultrasonic nozzle that generates an ultrasonic gas flow that flows along a first direction in a vacuum atmosphere; a knife edge that is inserted into the ultrasonic gas flow from one ...
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WO/2024/116747A1 |
An ion implantation device (10) comprises: a beam generating device (12) that generates an ion beam for irradiation of objects (W1, W2) to be processed, and that performs irradiation with the ion beam over an irradiation range, the size ...
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WO/2024/118409A1 |
A system for processing a sample comprising: a vacuum chamber having a window formed along one of its walls; a sample support configured to hold a sample within the vacuum chamber during a sample processing operation and move the substra...
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WO/2024/115029A1 |
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a charged-particle source configured to generate primary charged particles, the primary charge...
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WO/2024/114941A1 |
A multi-beam particle microscope having an improved aberration correction unit for individually correcting one or more aberrations is disclosed. In this case, the aberration correction unit has a sequence of electrode arrays comprising a...
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WO/2024/112992A1 |
The invention relates to a method for providing a plasma for plasma treatment of a surface (2) of a substrate (3), comprising the steps of: providing a process chamber (12); providing a substrate (3) in the process chamber (12); providin...
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WO/2024/116746A1 |
In the present invention, an ion injecting device 10 comprises an ion source 20 that generates ions, an extraction unit 22 that extracts ions from the ion source 20 and generates an ion beam, a beam scanning unit 28 that is configured to...
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WO/2024/118604A1 |
A sequential pass express charge (e) detection (SPEeD) mass analyzer designed for highly sensitive, rapid mass measurements of high mass (>1 MDa) analytes. A SPEeD analyzer enables high throughput and sensitivity because ions merely need...
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WO/2024/115204A1 |
A charged particle assessment method for identifying candidate defects in samples by scanning a charged particle beam across a sample; the method comprising: obtaining a first reference image from a first region of the sample and a secon...
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WO/2023/081882A8 |
A method and apparatus to shield various components (e.g., a gasket, a sensor, a wire, a mechanical component made of metals and/or polymers) deployed in a vacuum environment using a shield assembly formed from multiple ceramic fibers. T...
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WO/2024/112387A1 |
Embodiments of the present disclosure generally relate to a plasma processing apparatus. The plasma processing apparatus includes a processing chamber including a substrate support operable to hold a substrate, a main plasma source coupl...
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WO/2024/112372A1 |
According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes a conductive conical frustum having an open top base, an open bottom base, and a surface area coupling the open top base to the o...
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WO/2024/092062A3 |
A token adjustment system may include a carbon conversion device operable to generate a syngas from a greenhouse gas and a processing device. The processing device may be operable to receive one or more measurements. The one or more meas...
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WO/2024/110486A1 |
The present disclosure relates to electron-optical elements and methods for assessing electron-optical elements. In one arrangement, an electron-optical element comprises a substrate defining at least one aperture extending through the s...
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WO/2024/110489A1 |
The present disclosure relates to charged particle devices for projecting charged particles towards a sample and methods of assessing a sample using charged particles. A charged particle optical element directs beams of charged particles...
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WO/2024/112433A1 |
Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power...
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WO/2024/112517A1 |
Systems and methods for controlling tilt across a surface of a substrate are described. One of the methods includes providing a current signal to a magnetic coil associated with a plasma chamber. The current signal produces a magnetic fi...
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WO/2024/112078A1 |
A method for a thin film process including activated proton assist plasma etching is provided. The method for a thin film process including activated proton assist plasma etching comprises the steps of: positioning, in a process chamber,...
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WO/2024/111348A1 |
A multi-beam image acquisition device according to one aspect of the present invention is characterized by comprising: a deflector which, in a state in which a prescribed period elapses from an irradiation start of multiple primary elect...
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WO/2024/104605A1 |
An improved system and method for circuit edit or repair within multilayer structures comprising a large number of layers including layers with thicknesses below 20nm or even less, for example below 10nm or 8nm is provided. The system an...
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WO/2024/107248A1 |
Methods and apparatus for processing a substrate are provided herein. For example, a matching network comprises a first sensor operably connected to an input of the matching network and an RF generator operable at a first frequency and a...
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WO/2024/106835A1 |
The present invention relates to an electron emission source. The electron emission source comprises: a housing having, in an inner space, a gas inlet pipe for injecting an inert gas for plasma generation; a cathode electrode, which is m...
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WO/2024/107741A1 |
A method includes forming a porous ceramic coating on a component of a processing chamber. The method further includes applying a colloidal suspension to the porous ceramic coating to fill pores of the porous ceramic coating. The method ...
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WO/2024/107552A1 |
Systems and methods for driving passivation to increase a rate of etching a substrate are described. One of the methods includes generating a kilohertz radio frequency (RF) signal and generating a megahertz RF signal. The method includes...
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WO/2024/104265A1 |
A gas feeding nozzle device and a plasma etching machine. The gas feeding nozzle device is used for supplying a process gas to a reaction chamber; the gas feeding nozzle device comprises a gas feeding nozzle and a nozzle seat sealingly c...
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WO/2024/104855A1 |
A cleaning device for removing contamination particles from a surface to be cleaned. The cleaning device comprises an oxygen source configured to emit oxygen and thereby oxidize the contamination particles and the surface to be cleaned. ...
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WO/2024/104263A1 |
An air inlet nozzle device and a plasma etching machine. The air inlet nozzle device is used for providing a process gas for a reaction chamber of the plasma etching machine; the air inlet nozzle device comprises a first spraying hole pa...
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WO/2024/107561A1 |
An apparatus and technique for measuring a concentration of radical particles within a gas sample obtained from a location within a semiconductor processing system having a process chamber while a process is being performed within the pr...
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WO/2024/105200A1 |
A voltage waveform generator (1107) for a plasma assisted processing apparatus comprises an output node (510), a switch node (511) electrically coupled to the output node, and a multilevel voltage source converter (1101) coupled to the s...
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WO/2024/102144A1 |
Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of...
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WO/2024/099587A1 |
A method for imaging of semiconductor samples with reduced charging effects and a multi-beam charged particle beam system configured for imaging of semiconductor samples with reduced charging effects is provided. The reduced charging eff...
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WO/2024/098875A1 |
An ion source device, an ion source system and a debugging method therefor. The ion source device comprises a working barrel, a gas inlet pipe, and an excitation coil. The working barrel comprises a top plate and an annular side plate; t...
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WO/2024/099613A1 |
Radiofrequency, RF, generator, in particular for a plasma application, comprising: at least one cooling element having an upper surface and a lower surface; at least one DC power supply; at least one power stage to amplify an RF signal a...
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WO/2024/102511A1 |
A cathodic arc coating system includes alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium ni...
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WO/2024/100828A1 |
According to the present invention, reflected electrons are detected with high efficiency. This charged particle beam apparatus comprises: a charged particle source that emits a primary electron beam with which a specimen 1 is irradiated...
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WO/2024/102184A1 |
According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and...
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WO/2024/102220A1 |
Methods and apparatus for clamping a substrate comprise i. placing a substrate on a clamping surface of a substrate support having a plurality of electrodes spaced from one another including a first electrode and a second electrode; ii. ...
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WO/2024/102146A1 |
Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and control...
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WO/2024/099676A1 |
The invention relates to a method for correcting local elevations (40) on the surface, having a reflective coating (27), of an optical element (25) for EUV microlithography. The method comprises the steps of: measuring the surface of an ...
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WO/2024/101738A1 |
According to an embodiment of the present invention, an antenna structure may be provided. The antenna structure is arranged on the side circumference of a discharge tube that provides a space where plasma is generated, and comprises n u...
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WO/2024/099369A1 |
The present application discloses a wafer carrying apparatus. The disclosed wafer carrying apparatus comprises a base, a feed portion, and a first adapter. The first adapter is located below the base, and is provided with a central hole ...
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WO/2024/102524A1 |
A method of determining the depth of a hole milled into a first region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; depositing material directly over a top surf...
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WO/2024/100897A1 |
The purpose of the present disclosure is to provide a charged particle beam device that can measure an overall sample by making uniform a sample surface potential. In a charged particle beam device according to the present disclosure, a ...
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WO/2024/102229A1 |
A plasma processing system is provided including a processing chamber, one or more optical emission spectroscopy (OES) systems, and a controller The processing chamber includes a chamber body enclosing a processing volume. The chamber bo...
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