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Title:
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/093701
Kind Code:
A1
Abstract:
The present disclosure provides an electrostatic discharge protection device. The electrostatic discharge protection device comprises a substrate and a gate structure located on the substrate, wherein a first well region and a second well region connected to each other are formed in the substrate, the first well region has a first conductivity type, and the second well region has a second conductivity type; the gate structure spans from above part of the first well region to above part of the second well region, a first doped region and a second doped region located on one side of the gate structure are formed at the top of the first well region, the first doped region has a first conductivity type, and the second doped region has a second conductivity type; a third doped region and a fourth doped region located on the other side of the gate structure are formed at the top of the second well region, the third doped region has a first conductivity type, and the fourth doped region has a second conductivity type. In this way, a first parasitic triode and a second parasitic triode for discharging static electricity can be formed in the electrostatic discharge protection device, which facilitates improvement of the electrostatic discharge capability of a circuit.

Inventors:
HUANG YONG (CN)
HUANG LU (CN)
ZHOU WANYI (CN)
BI RUI (CN)
WU LIN (CN)
SHI HAILI (CN)
GUO LELE (CN)
ZHU LIJUAN (CN)
Application Number:
PCT/CN2023/125966
Publication Date:
May 10, 2024
Filing Date:
October 23, 2023
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L23/60
Foreign References:
CN207938608U2018-10-02
CN205319155U2016-06-15
CN102832233A2012-12-19
US20190304966A12019-10-03
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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