Title:
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
Document Type and Number:
WIPO Patent Application WO/2024/093753
Kind Code:
A1
Abstract:
A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.
Inventors:
COHEN GUY M (US)
CHENG KANGGUO (US)
LI JUNTAO (US)
XIE RUILONG (US)
FROUGIER JULIEN (US)
CHENG KANGGUO (US)
LI JUNTAO (US)
XIE RUILONG (US)
FROUGIER JULIEN (US)
Application Number:
PCT/CN2023/126461
Publication Date:
May 10, 2024
Filing Date:
October 25, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
G11C11/00
Foreign References:
| CN101226989A | 2008-07-23 | |||
| US20220181547A1 | 2022-06-09 |
Attorney, Agent or Firm:
LIU , SHEN & ASSOCIATES (CN)
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