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JP57038935 |
PURPOSE: To obtain a chemical gaseous phase reactor of good thermal efficiency by disposing the susceptor of a chemical gaseous phase reactor in an inverted polygonal turncated pyramid shape and providing a heat source axially symmetrica...
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JP57027126 |
PURPOSE: To provide a vapor growth device for compound semiconductors which provide composition changes between different composition layers by providing an opening part to a partition plate dividing a vapor growth reaction chamber to tw...
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JP57021930 |
PURPOSE: To prevent growth speed in each filter formation from being reduced by detecting the change of temperature inside a reaction tube with opposing light emitting and receiving means in a pressure reduction type chemical vapor phase...
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JP57019034 |
PURPOSE: To form a thin film of a good quality by providing a plasma generating area to be excited by a frequency different from that in a reacting tube on the side of a reaction gas introducing inlet in a reaction area of a vapor growth...
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JP57012825 |
PURPOSE: To prevent the back flow of dust and raise the efficiency of dust collection by providing an outlet port with a smaller width than that of an inlet port tangentially to the cyclone of a reaction apparatus and providing a bulkhea...
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JP56163752 |
PURPOSE: To permit production of multiple pieces of substrates of a large area at one time by maintaining the temp. in a tube substantially uniform over the section of the tube on the lower stream of the heating area of a vapor phase gro...
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JP56161832 |
PURPOSE: To obtain a gaseous phase treatment device which is excellent in the productivity of silicon wafer, the uniformity of its thickness, and reliability by using a system in which reactant gases are controllably supplied with a carr...
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JP56155635 |
PURPOSE: To control the thickness of an oxide film with high accuracy for the production of a semiconductive wafer having a predetermined diffused sheet resistance with ease, by providing a reaction cylinder with a plurality of oxygen fe...
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JP56152737 |
PURPOSE: To exhaust and remove minute particles, etc. produced during putting in and out of a board by providing a suction port intercommunicating with the exhaust system of the outside to the bottom surface of the board of a chemical va...
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JP56152738 |
PURPOSE: To measure the degree of vacuum in a reaction tube at the reaction filming always accurately by installing a branch tube in parallel with the reaction tube of a vapor deposition device using decreased pressure, and providing a p...
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JP56141829 |
PURPOSE: To prevent cracking of deposits and make peeling from substrates easy by depositing bulk material on the buffer layer on the substrate which has no reactivity with the deposit and has good peeling property. CONSTITUTION: The gra...
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JP56111038 |
PURPOSE: To enable crystals etc. of high quality to be obtained with good efficiency by providing a gas substituting chamber communicated with a reaction tube by way of a hermetic door. CONSTITUTION: To insert a boat 3, a gate valve 21 i...
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JP56105746 |
PURPOSE: To increase the purity of a vapor phase growth layer by inducing dopant gas from the side of low temperature and minimizing thermal cracking of the dopant. CONSTITUTION: Ga source 23 is set on upper high temperature part 22a of ...
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JP56095330 |
PURPOSE: To allow normal crystal growth to take place in vapor phase growth using a large amount of raw material gas and assure safety by providing two or more systems of exhaust systems and forming a pressure difference between each of ...
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JP56078416 |
PURPOSE: To reduce the preparation time of a thin film consisting of plural layers on a base board and obtan a uniform thin film having a uniform film thickness and quality thereof, by using the plasma CVD method and the ion plating meth...
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JP56076240 |
PURPOSE: To form a high purity and high quality compound semiconductor eptaxial layer, by coating a quartz tube inner wall and a quartz jig with MgO.Al2O3 by a magnesia spinel vapor growth process. CONSTITUTION: While CO2 and H2 are intr...
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JP56070831 |
PURPOSE: To enhance the uniformness of thickness and quality of a stacked film on a substrate by a method wherein gas supplying and discharging pipes having plural gas supplying inlets and discharging outlets are installed in the longitu...
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JP56067535 |
PURPOSE: To easily form oxide films, insulation films, etc. of uniform film thickness on the surface of semiconductor wafers by forming the gas nozzle of a vacuum type vapor phase growing apparatus by means of an injection plate having a...
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JP56053733 |
PURPOSE: To form gases of a perfectly mixed state rapidly at the time of mixing two kinds of gases, by using an apparatus of multitube system heat exchanger type consisting of a plurality of pipe bundles having small holes and a cylindri...
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JP56048236 |
PURPOSE: To provide a reaction tube for thermal decomposion gas which consists in forming at least part of a reacting tube coaxially inserted into an outside cylinder for air flowing into gas permeable porous nature, and which is not exp...
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JP56048237 |
PURPOSE: To secure a uniform distribution of concentration for the material component in a reaction tube and thus obtain a uniform thickness for the grown film, by increasing the flow speed at the area near the surface of the substrate f...
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JP56028636 |
PURPOSE: To make removal of a reaction pipe for the purpose of cleaning easy and make the film thickness of the formed film uniform by inserting another one reaction pipe which is removable, to the inner side of the reaction pipe. CONSTI...
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JP56026539 |
PURPOSE: To obviate the needs for etching and cleaning a quartz pipe and a substrate holding tool with a solution by etching the inside of the quartz pipe by using a plasma etching method. CONSTITUTION: Gas for CVD is compounded in a gas...
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JP56014401 |
PURPOSE: To make temp. distribution uniform and raise alcohol decomposition rate by feeding alcohol gas into reforming catalyst supporting passages and a catalyst heating gas into passages partitioned with a catalyst carrier to enhance t...
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JP55139820 |
PURPOSE: To prevent the short circuit of treating gas and the dust deposition on the top surface of cross beams by disposing seal plates in the spacings between the side faces of adjacent stacked catalyst units, the spacing between the u...
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JP55079034 |
PURPOSE: To provide a structure material of boron having a good film quality and an excellent mechanical property useful as an acoustic material by method wherein chemical deposition method is used to sequentially form crystalline and am...
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JP55056823 |
PURPOSE: To improve greatly heat recovery rate of a catalytic oxidation apparatus by placing in shell a heat exchange structure and catalyst forming gas passages passing across each other at right angles every step consisting of corrugat...
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JP55039225 |
PURPOSE: To make easy the pass of the reactant gas, and to make the reaction product possible to be obtained at high yield, by installing in the apparatus the meshy or linear heaters horizontally into stages more than one. CONSTITUTION: ...
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JP54144302 |
PURPOSE: To produce olefins which are basic raw materials in petrochemical industry, safely in high yield with suppresion of the formation of coke, by blowing hydrocarbons into molten salts (preheating), followed by pyrolyzing and coolin...
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JP54094472 |
PURPOSE: To reeuce NOx present in combusion exhaust gas without generating soot and smoke and with high denitrification rate by the procedure in which a reducing agent consisting of an oxygen-containing hydrocarbon containing a fixed pro...
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JP54062176 |
PURPOSE: To make ignition energy unnecessary and minimize the amt. of N2 used or reduce it to zero by introducing an O2-contg. gas current into a gas mixing portion the inlet and outlet of which for a hydrocarbon-contg. gas current is se...
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JP54046172 |
PURPOSE: To reduce NOx noncatalytically so as to make it harmless, by injecting alcohol or aldehyde in a mol ratio not less than specific ratio to NOx into NOx- contg. gas at a low temp. region in the presence of O2. CONSTITUTION: A redu...
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JP54046171 |
PURPOSE: To increase denitration efficiency by injecting NH3 and aq. H2O2 soln. of low concn. into NOx-contg. gas. CONSTITUTION: Into NOx-contg. gas is injected spray of NH3 and aq. H2O2 soln. of concn. not higher than 30wt%, pref. not h...
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JP54046170 |
PURPOSE: To decrease corrosion and blockade of an exhaust gas duct and to utilize NH3 effectively so as to decrease NOx, by injecting NH3 less than a specific quantity which is less than the mols of NOx contained in the exhaust gas. CONS...
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JP54038268 |
PURPOSE: To remove efficiently NOx contained in high-temp. exhaust gas which is difficult to be treated, by reduction of the exhaust gas contg. NOx in the presence of NH3, a precursor of NH3, or amines with O2 concn. and temp. of the exh...
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JP54031082 |
PURPOSE: To make NOx harmless with a high decompositoion efficiency, by injecting NH3 and H2 into waste gas through a number of injecting openings made on injection pipes which are arranged alternately along an equal-temp. plane crossing...
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JP54019479 |
PURPOSE: To provide a reactor easy to manufacture which enables chemical reaction to proceed under the respective optimal conditions through passage of a heating medium by means of heating medium circulating mechanism respectively provid...
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JP54009158 |
PURPOSE: To accomplish an effective, inexpensive denitration with a simple equipment by mixing a waste gas to be supplied to a regenerator with air containing a specified amount of ammonium.
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JP54008161 |
PURPOSE: To remove efficiently NOx, by performing the treatment while specifying the temperature of the gas to be treated and the mixed gas of ammonia and steam to be added, at the denitration of exhaust gas using ammonia.
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JP54005863 |
PURPOSE: To accomplish effective decrease of NOx by curtailing the injection of reducing agent through flowrate control of gaseous reducing agent injected according to the amount of residual NOx in the discharge passage when NOx is remov...
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JP54005864 |
PURPOSE: To provide an ozone deodoring apparatus which allows simultaneous treatment of preventing drop in the gas-solid contact reaction due to dew condensation in the reaction system by means of a dehumidifier of the intended gas provi...
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JP54005862 |
PURPOSE: To accomplish effective reduction of NOx with the reucing agent running against the gas stream by injecting the agent in the direction opposite to the gas stream or at any right angle to this direction in a catalyst-free reducti...
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JP54005867 |
PURPOSE: To provide the subject device wherein the humidity of a malodorous gas flowing into the device is detected, and on the basis of the detection result the humidity of the malodorous gas is controlled, thereby preventing dew format...
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JP54004870 |
PURPOSE: To remove the necessity for equipping particularly the device for mixing sufficiently the gaseous reducing agent and the exhaust gas, by feeding the gaseous reducingagent into the flue at the inlet of the blower positioned in fr...
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JP54002265 |
PURPOSE: To omit equipment for decomposing exhaust ozone, and simultaneously to lengthen the catalyst life and to use ozone effectively in deodorizing apparatus using catalyst and ozone at the same time, by feeding ozone into a mixing ta...
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JP54001269 |
PURPOSE: To reduce NOx and CO contained in combustion exhaust of HC compound gas easily with high efficiency at a low cost without catalyst through reduction of NOx contained therein within a given temperature range by mixing a part of u...
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JP53149166 |
PURPOSE: To remove efficiently nitrogen oxides with a non-catalyst process, by adding a substance generating ammonia to the exhaust gas from the burning and heating apparatus furnished with regenerators in the space at the downstream are...
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JP53147670 |
PURPOSE: To improve denitration efficiency while preventing attachment of NH4 NH4HSO4 to the generating surface by adding fine grains such as fly-ash and Fe Fe2O3 to a combustion waste gas in catalyst-free denitration of a combustion was...
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JP53146968 |
PURPOSE: To decompose NOx effectively at a lower temp. than that for conventional noncatalytic denitration, by addn. of NH3 into a boiler and by addn. of H2O2 to a zone at a temp. lower than that of the NH3 addn. zone.
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JP53144457 |
PURPOSE: To improve the denitration efficiency of combustion gas by a non-contact system through injection of hydrogen peroxide on the downstream from a plural points corresponding to the flow speed in response to the NOx concentration a...
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