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Matches 1,301 - 1,350 out of 2,217

Document Document Title
JP2003295443A
To provide a resist composition excellent in transmittance to light of ≤170 nm wavelength and suitable particularly for F2 excimer laser lithography.The resist composition comprises a resin and an acid generator, wherein the resin unde...  
JP2003292716A
To prepare a substantially homogeneous polymer blend suitable for use in photoresist compositions for lithography.The polymer blend is provided for use in the photoresist compositions (specifically, chemical amplification-type photoresis...  
JP3453396B2
PURPOSE: To obtain the subject composition containing a base polymer and a specific tackiness-providing resin at a specific ratio, having low molecular weight, excellent in adhesion at high temperature, creep property at high temperature...  
JP2003277443A
To provide a photosensitive polymer which can improve the characteristics of resist compositions, such as transmittance and dry etching resistance, and to enable the formation of fine patterns.This photosensitive polymer having repeating...  
JP2003280205A
To provide a positive resist composition suitable for use under an exposure light source of ≤160 nm, particularly F2 excimer laser light (157 nm) and to concretely provide a positive resist composition having satisfactory transmittance...  
JP2003280204A
To provide a positive resist composition having satisfactory transmittance when an exposure light source of ≤160 nm, concretely F2 excimer laser light (157 nm) is used and ensuring improved line edge roughness and development defects.T...  
JP2003280203A
To provide a positive resist composition having satisfactory transmittance when an exposure light source of ≤160 nm, concretely F2 excimer laser light (157 nm) is used and ensuring improved line edge roughness and development defects.T...  
JP2003270790A
To provide a positive resist composition having satisfactory transmittance at the time of using an exposure light source of ≤160 nm, concretely F2 excimer laser light (157 nm) and improved in line edge roughness and development defects...  
JP2003270789A
To provide a positive resist composition having satisfactory transmittance at the time of using an exposure light source of ≤160 nm, concretely F2 excimer laser light (157 nm) and improved in line edge roughness and development defects...  
JP2003252932A
To provide an acrylic acid ester copolymer rubber which is free from a halogen, can provide a rubber product with excellent fuel oil resistance and tensile strength, and can be crosslinked by sulfur or an organic peroxide; a method for p...  
JP2003255541A
To provide a positive resist composition having satisfactory transmittance to ≤160 nm, concretely F2 excimer laser light (157 nm) and excellent in line edge roughness and development defects.The positive resist composition comprises (A...  
JP2003255544A
To provide a positive resist composition excellent in transmittance to light of ≤170 nm wavelength and suitable particularly for F2 excimer laser lithography.The positive resist composition comprises a resin having polymerization units...  
JP2003248313A
To provide a new radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution, pattern shape and adhesion to a substrate, causing no de...  
JP2003248970A
To provide an optical recording medium that has small warping and excellent electric characteristics even if there are changes in environments.An optical recording medium has, at least, a reflector film, a light transmissive layer formed...  
JP2003241383A
To provide a radiation-sensitive resin composition excellent in contrast, capable of forming a fine resist pattern with a high degree of accuracy and excellent also in transparency to a radiation, sensitivity and resolution.The radiation...  
JP2003240755A
To provide a microchip made of a resin with a microchannel with a channel sealed by an upper substrate which is transparent and absorbs little in ultraviolet region, is minute and has satisfactory surface smoothness, and is high in dimen...  
JP2003207640A
To provide an optical retardation plate which makes it possible to conduct uniform polarization conversion within a wide wavelength region using a single plate and which has a low wavelength dispersion coefficient.The optical retardation...  
JP2003192735A
To provide a resist material which is sensitive to high-energy rays and is excellent in the sensitivity at a wave length of 200 nm or less, especially of 170 nm or less.The polymer compound contains repeating units expressed by formulae ...  
JP2003195507A
To provide a radiation-sensitive resin composition having high transparency for radiation, excellent basic performances as a resist such as sensitivity, resolution, dry etching durability, pattern profile, and suitable as a chemical ampl...  
JP2003195505A
To provide a positive chemical amplification type resist composition having favorable various kinds of resist performances such as sensitivity and resolution and particularly excellent in dry etching durability.The positive resist compos...  
JP2003192729A
To obtain a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition containing the same.The photosensitive polymer has a weight average mol.wt. of 3,000-100,000 and comprises repeating units contain...  
JP2003192734A
To provide a resist material which is sensitive to high-energy rays and is excellent in the sensitivity at a wave length of 200 nm or less, especially of 170 nm or less.The polymer compound has repeating units (m unit and n unit) express...  
JP2003192737A
To provide a resist material which is sensitive to high-energy radiation and excellent in sensitivity to rays of a wavelength of 200 nm or shorter, particularly 170 nm or shorter.This resist material comprises a polymer compound having r...  
JP2003183478A
To provide a composition which is excellent in adhesion to a substrate, heat resistance, solvent resistance, and capability for controlling an uneven shape and can easily form a film used as a light-diffusing reflective film of a reflect...  
JP2003176324A
To provide a photoresist monomer for preventing the acid generated by an exposed part by an exposing process in a photolithography step from migrating into an unexposed part, and further to provide a copolymer of the monomer and a photor...  
JP2003176323A
To provide a polymer for a chemical amplification type photoresist suitable for ArF excimer laser, and further to provide a photoresist composition.This polymer for the chemical amplification type photoresist is represented by general fo...  
JP3418971B2
To obtain a photoresist composition using an acid as a catalyst, capable of forming an image with radiation of 193 nm and capable of forming a photoresist structure having high resolution and high etching resistance by development. The p...  
JP2003173022A
To provide a positive photosensitive composition having high resolving power and excellent in defocus latitude and side-lobe margin.The positive photosensitive composition comprises (A1) at least one compound that generates a specified a...  
JP3416244B2
PURPOSE: To produce a transparent cycloolefin copolymer having a high tensile strength by copolymerizing a polycyclic olefin and ethylene in the presence of a catalyst comprising a specific asymmetric metallocene and a cocatalyst. CONSTI...  
JP3416243B2
PURPOSE: To produce a cycloolefin polymer having a high viscosity number by polymerizing a polycyclic olefin in the presence of a catalyst comprising an aluminoxane and a specific metallocene compd. CONSTITUTION: Based on the total monom...  
JP2003167333A
To provide an excellent positive resist composition that is excellent in line edge roughness, prevents a pattern falling and does not cause the pattern falling even if a focus and exposure particularly in a fine pattern are varied.The po...  
JP2003162062A
To obtain a resist pattern having a good pattern shape when a resist pattern is formed using exposing light having a wavelength of ≤180 nm band with minimally producing scum.A pattern formation material comprising a base resin containi...  
JP2003162059A
To solve the problem of a performance enhancing technique proper to microphotofabrication using far ultraviolet light, particularly ArF excimer laser light, to provide a positive photosensitive composition having small density dependence...  
JP2003518169A
(57) Summary book invention relates to the olefin polymerization method of being suitable for whether an aromatic series solvent or a diluent being restricted and it eliminating. The olefin monomer in which the method of the present inve...  
JP2003160620A
To obtain a cycloolefin based addition copolymer that contains a reactive silyl group having a specific structure, has excellent optical transparency, heat resistance and adhesiveness, and can produce crosslinked substance having improve...  
JP2003156848A
To provide a positive photosensitive composition excellent in suitability to halftone exposure (side lobe resistance) and less liable to cause development defects.The positive photosensitive composition comprises (A) a compound which gen...  
JP2003156846A
To solve the problem of a performance enhancing technique proper to microphotofabrication using far ultraviolet light, particularly ArF excimer laser light and to provide a positive photosensitive composition having excellent density dep...  
JP3410712B2
To provide an unfunctionalized, functionalized or grafted olefin- cycloolefin-alkylstyrene copolymer. The copolymer can be functionalized by functionalizing the benzyl proton of an alkylstyrene unit. The functionalized or grafted olefin-...  
JP2003137940A
To provide a new polymer which has a high fluorine content, can have polar groups in the same molecule, and can form films having high adhesiveness to substrates, to provide an anti-reflective material coated with the polymer, and to pro...  
JP2003137939A
To provide a new polymer which has a high fluorine content, can have polar groups in the same molecule, and can form films having high adhesiveness to substrates, to provide an anti-reflective material coated with the polymer, and to pro...  
JP2003131375A
To develop a method for forming a patterned insulating film having high transmittance in the visible region and having high heat resistance and high dry etching durability and to improve the performance of a display device.A radiation-se...  
JP2003122010A
To provide a positive resist composition excellent in edge roughness and sensitivity.The positive resist composition is characterized in containing a resin which has a specified aliphatic cyclic hydrocarbon group and which increases the ...  
JP2003115212A
To provide a planar illuminant easy to increase its area, with excellent heat resistance and suitable for a high-rigidity display device or signboard without causing camber due to moisture absorption or the like.This planar illuminant is...  
JP2003105035A
To provide a photoresist monomer which can be used with a VUV (157 nm) light source, and a photoresist polymer.The photoresist monomer is represented by formula (1) (wherein X1, X2, R1, 1 and m are as defined in the specification). The p...  
JP2003096136A
To provide a photosensitive polymer containing a hydroxyalkyl vinyl ether monomer unit, and a resist composition using the same.The photosensitive polymer has a weight-average molecular weight of 3,000-50,000 and contains an alkyl vinyl ...  
JP2003096087A
To obtain a cyclic olefin with a reactive silyl group which maintains adhesiveness and crosslinking performance as a crosslinking point in the reactive silyl group, prevents inhibiting polymerization in the polymerizing process, decompos...  
JP2003096123A
To provide a copolymerization catalyst for α-olefins and cycloolefins which can be easily synthesized industrially and exhibits a high activity in polymerization and in copolymerization.This catalyst comprises an activator and an easily...  
JP2003089708A
To obtain a resist material which comprises a polymer compound, is sensitive to high-energy rays, has excellent sensitivity at ≤200 nm wavelength, improved transparency of resist and excellent plasma etching resistance.The polymer comp...  
JP2003089705A
To obtain a catalytic system for copolymerization of an α-olefin and a cyclic olefin, having high polymerization activity and polymerizability.The catalyst comprises a readily synthesizable transition metal compound having one molecule ...  
JP2003082017A
To provide a method for producing a cyclic olefinic copolymer in the presence of a catalyst simultaneously satisfying characteristics which comprise not producing a gel-like polymer component or a solvent-insoluble polymer component, hav...  

Matches 1,301 - 1,350 out of 2,217