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WO/2021/131198A1 |
A dispersant for chemical mechanical polishing use which can be used for the flattening of a surface of at least one of an insulating layer and a wiring layer is blended with a block copolymer (P) having a polymer block A and a polymer b...
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WO/2021/125919A1 |
The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing...
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WO/2021/121045A1 |
A chemical-mechanical polishing solution, comprising: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidant, water, and a pH adjuster. The chemical-mechanical polishing solution ...
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WO/2021/121047A1 |
Provided is a chemical-mechanical polishing liquid, comprising: abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing an adenine organic acid structure, an oxidizer, water and a pH regulator. The present inventio...
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WO/2021/121046A1 |
Provided is a chemical mechanical polishing solution, which comprises abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing both an amino sugar and a cyclic alcohol structure, an oxidant, water and a pH adjusting...
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WO/2021/121048A1 |
Provide is a chemical mechanical polishing solution, comprising cerium oxide, a polyacrylic acid, a polyvinylamine, and water. The use of a polyvinylamine as an additive can reduce the dishing amount of negatively charged cerium oxide on...
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WO/2021/121043A1 |
A chemical-mechanical polishing fluid, comprising water, ceric oxide, polyquaternium, a benzene ring-containing carboxylic acid, and polyvinylamine. Only when polyquaternium, the benzene ring-containing carboxylic acid, and polyvinulamin...
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WO/2021/121049A1 |
Disclosed is a chemical mechanical polishing liquid comprising water, cerium oxide, polyacrylic acid, and polyetheramine. The chemical mechanical polishing liquid uses polyetheramine as an additive capable of improving the polishing rate...
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WO/2021/121044A1 |
Provided is a chemical mechanical polishing solution. The chemical mechanical polishing solution contains water, cerium oxide abrasive particles and hydroxylamine. The chemical mechanical polishing solution can also improve the removal r...
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WO/2021/117689A1 |
This chemical-mechanical polishing composition is for polishing a base material and contains an abrasive, hydroxyethyl cellulose having a weight-average molecular weight of 200,000 or lower, a basic component, a surfactant, and an aqueou...
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WO/2021/118694A1 |
The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal ...
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WO/2021/117428A1 |
Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction ...
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WO/2021/111863A1 |
The present invention provides: a composition for chemical mechanical polishing, said composition increasing the polishing rate ratio of a silicon nitride film to a silicon oxide film, while reducing the occurrence of dishing in the sili...
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WO/2021/113285A1 |
High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria co...
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WO/2021/105174A1 |
The invention relates to cerium based particles having a rough surface and their use as a component of a polishing composition, especially for chemical mechanical polishing. The present invention also relates to the method of preparation...
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WO/2021/105991A1 |
A disaggregation method for NDs (nanodiamonds) comprising: sonicating NDs dispersed in water; and sedimenting non-disaggregated NDs by centrifugation. Optionally, the method includes sonicating the disaggregated NDs with CAN [(NH4)2Ce(NO...
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WO/2021/105169A1 |
The invention relates to cerium based core-shell particles having a core of cerium oxide optionally doped with at least one metal (M) and a shell consisting of a plurality of nanoparticles of cerium oxide optionally doped with at least o...
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WO/2021/096160A1 |
Polishing particles and the like of embodiments can have high polishing rate properties and suppress the formation of scratches, which may occur in a polishing process, when applied to a chemical mechanical polishing (CMP) process, by ad...
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WO/2021/095415A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and...
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WO/2021/095413A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method with which a semiconductor substrate containing a conductive metal such as tungsten or cobalt can be flatly polished at high speed and su...
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WO/2021/095412A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and...
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WO/2021/092852A1 |
A method for treating a metal substrate to form a high gloss ceramic finish enclosure have been described. In an example, a method (100) for treating a metal substrate includes providing a metal substrate (102); polishing the metal subst...
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WO/2021/094641A1 |
The present invention relates to a method for polishing parts made of aluminum, and more specifically parts made of aluminum with a high content of silicon and produced by additive manufacturing.
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WO/2021/095414A1 |
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well ...
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WO/2021/084386A1 |
An abrasive solution for finishing a metal part is provided. The abrasive solution includes abrasive particles suspended in a solution. The abrasive particles are configured to abrade a surface of the metal part. The abrasive particles a...
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WO/2021/086015A1 |
Provided are a CMP slurry composition for polishing a tungsten pattern wafer, and a method for polishing a tungsten pattern wafer by using same, the CMP slurry composition comprising: a polar solvent and/or a nonpolar solvent; an abrasiv...
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WO/2021/081162A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.
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WO/2021/081153A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081145A1 |
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria particles, (b) a cationic polymer selected from a cationic homopolymer, a cationic copolymer comprising at least one cationic ...
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WO/2021/081171A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081176A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound ...
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WO/2021/081148A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081102A1 |
Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions 5 contain ceria coated inorganic oxide particles as abrasives, such as ceria-...
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WO/2021/076352A1 |
A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion i...
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WO/2021/074363A1 |
The invention relates to a co-initiator comprising the aminobenzoate derivative according to Formula (I) and at least one ancillary amine, wherein the reactivity and solubility of said co-imitator in UV-curable resins is sufficiently hig...
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WO/2021/074509A1 |
In a method for mass-finishing a part (1), said method comprising placing the part (1) and a composition comprising an electrolyte (5), media (10) and carriers (20) in a tank (2, 2'), the media (10) and the carriers (20) being dispersed ...
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WO/2021/067151A1 |
Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤ 100 nm, ≤ 50 nm, ≤ ...
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WO/2021/065644A1 |
Provided is a polishing composition capable of achieving both a high polishing rate and an excellent HLM rim protrusion resolving ability. This polishing composition contains abrasive grains, a basic compound, a pH buffer, and water, and...
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WO/2021/065815A1 |
[Problem] To provide a polishing composition for eliminating protrusions at a periphery of a laser mark in a wafer polishing step; a method for producing the polishing composition; and a polishing method that uses the polishing compositi...
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WO/2021/061591A1 |
Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive a...
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WO/2021/061510A1 |
A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosi...
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WO/2021/049154A1 |
The present invention provides a means capable of achieving a higher polishing rate than conventional means, for a polishing composition for polishing various materials, and particularly, for polishing various materials including a resin...
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WO/2021/046622A1 |
The present invention relates to a natural composition capable of replacing silicone components in a wide variety of types of application, preferably in the field of cosmetic, veterinary cosmetic, dermocosmetic and automotive products. T...
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WO/2021/046080A1 |
A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator...
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WO/2021/041699A1 |
A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achi...
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WO/2021/041694A1 |
A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal r...
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WO/2021/028264A1 |
The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.
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WO/2021/023748A1 |
The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.
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WO/2021/024899A1 |
Provided is a method for filtering a polishing-additive-containing liquid with which it is possible to implement a polishing composition that shows exceptional defect reduction performance while maintaining a practical filter life. The m...
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WO/2021/011196A1 |
The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a ca...
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