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WO/1998/030667A1 |
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: ammonium fluoride and/or a derivative thereof 1-21 %; an org...
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WO/1998/026025A1 |
A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer such as urea hydrogen peroxide, a complexing agent such as ammonium oxalate or tartaric acid, an abrasive, and an optional surfactant. Also disclosed is ...
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WO/1998/023408A1 |
A chemical mechanical polishing precursor composition comprising at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when admixed with an oxidizing agent prior to use to remov...
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WO/1998/020526A1 |
A fluorocarbon-base dry etching gas which is free from the global environmental problems; and an etching method in which a plasma gas obtained therefrom is used. The gas comprises a C�2-6? fluorinated ether constituted of carbon, fluor...
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WO/1998/013536A1 |
A chemical mechanical polishing slurry precursor composition comprising urea and at least one second oxidizer. The composition also optionally includes an organic acid, and an abrasive. Also disclosed is a polishing slurry which comprise...
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WO/1998/004646A1 |
A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material...
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WO/1997/049649A1 |
The method comprises (a) impregnating a mineral surface which contains silicon, such as a ceramic paving, with a composition comprising an aqueous solution of fluorhydric acid (0.5-6 %) and a fluorinated non-ionic surfactant (0.01-0.1 %)...
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WO/1997/049648A1 |
Said compositions comprise an aqueous solution of fluorhydric acid (0.5-6 %) and a fluorinated non-ionic surfactant (0.01-0.1 %). The impregnation of a mineral surface which contains silicon with one of said compositions provides for the...
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WO/1997/047030A1 |
A chemical mechanical polishing slurry comprising an oxidizing agent, a fluoride containing additive and an abrasive and a method for using the fluoride containing additive chemical mechanical polishing slurry to remove tungsten and tita...
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WO/1997/041278A1 |
A method for removing scales formed on iron-based metal alloy containg Ni and/or Cr is disclosed. The method comprises contacting the metal alloy with a pickling solution containing nitrates and fluorides as essential components. The nit...
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WO/1997/019937A2 |
The invention concerns a process for preparing bis-alkoxy-triazinyl-amino-containing stilbene disulphonic acids or their derivatives, characterized in that bis-chlorotriazinyl-amino-containing stilbene disulphonic acids or their derivati...
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WO/1997/015534A1 |
A product for the removal of silicate/silicon-containing compounds, especially on windows, and where the product comprises at least two main components, where the ammonium hydrogen-fluoride is an active component and constitutes 3-19 per...
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WO/1997/002958A1 |
A process for selectively removing organic residues, damaged oxides, and native oxides from plasma-etched silicon wafers with a solution of a hydrogen fluoride adduct of an organic amine dissolved in an organic solvent.
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WO/1996/015550A1 |
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e. Si-Ge-C), methods for growing Si-Ge-C epitaxial layers(s) (42) on a substrate (32), etchants especially suitable for Si-Ge-C etch-stops (42), and novel ...
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WO/1995/026428A1 |
Phosphoric acid-free baths for chemically polishing stainless steel surfaces, including an aqueous solution of a mixture of hydrochloric acid and nitric acid, an optionally substituted hydroxybenzoic acid, a cationic surfactant and compl...
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WO/1995/024456A1 |
Aqueous compositions comprising certain amino acids such as polyaspartic acid or aspartic acid/glutamic acid copolymers when at least partially protonated at pH of 7 or below effectively clean ferrous metal surfaces by contacting said su...
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WO/1995/016006A1 |
Cleaning compositions useful for cleaning wheel soils from surfaces of painted steel, painted aluminum, chrome, stainless steel, clear coated aluminum and plastic are described. The cleaning composition has a pH of about 3 to about 6.5 a...
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WO/1995/002079A1 |
A chromium and ferricyanide free aqueous deoxidizer/desmutter for aluminum and magnesium alloys contains nitric acid, ferric ions, persulfate, and molybdate and preferably also sulfate, fluoride, and ethoxylated acetylenic diol surfactant.
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WO/1994/021474A1 |
A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid, such as potassium citrate [COH(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-contai...
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WO/1994/018696A1 |
A wet-etching composition for semiconductors which is produced by adding a surfactant composed of an alkylsulfonic acid and an omega-hydrofluoro-alkylcarboxylic acid to a buffered hydrofluoric acid comprising hydrogen fluoride, ammonium ...
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WO/1993/023493A1 |
An aqueous composition for etching and cleaning semiconductor devices comprises a solution of an acid and a surfactant which is a branched chain aliphatic amine having the formula CmH2m+3N, where m is an integer from 7 to 10. The composi...
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WO/1993/021483A1 |
A method of cleaning and maintaining a hot water heater tank contaminated with water scale and sediment by introducing an aqueous acidic treatment solution from a reservoir (8), retaining the acidic solution for a sufficient time to diss...
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WO/1993/003919A1 |
Thin impermeable, surface hardened, corrosion-resistant, durable, dry lubricant surface finishes are provided as well as surface finished products and methods for the production thereof. The surface finishes comprise particulate mixtures...
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WO/1993/003921A1 |
Thin impermeable, surface hardened, corrosion-resistant, durable, dry lubricant surface finishes are provided as well as surface finished products and methods for the production thereof. The surface finishes comprise particulate mixtures...
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WO/1992/021733A1 |
There is disclosed methods for fabricating electrophoretic displays (10). Essentially the methods employ selective materials such as different metals (15, 18, 19, 20) which are capable of being etched by different etchants. In this manne...
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WO/1992/017595A1 |
The isolation and characterization of genes involved in proteolytic processing in species of the genus Pichia is described. The availability of such genes has enabled the generation of strains of Pichia that are deficient in proteolytic ...
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WO/1991/002658A1 |
A system for etching superconducting films of yttrium-barium-copper-oxide (YBa2Cu3O2) is disclosed. The etchant comprises ethylenediaminetetraacetic acid of varying concentrations in water or a water/glycerol mixture. The described etcha...
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WO/1991/001894A1 |
A composition for stripping tin, lead or solder, as well as any underlying copper-tin alloy, from copper surfaces, containing an alkane sulfonic acid, preferably methane sulfonic acid, an inorganic nitrate, preferably ferric nitrate, and...
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WO/1990/013443A1 |
An etchant solution characterized by water and: (a) about 65 % to 75 % by weight phosphoric acid; (b) about 1 % to 5 % by weight nitric acid; (c) about 0 % to 15 % by weight acetic acid, and (d) about 0.005 % to about 5 % of an amine oxi...
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WO/1990/012071A1 |
A composition for stripping tin or solder, as well as any underlying copper-tin alloy, from copper surfaces, containing an alkane sulfonic acid, preferably methane sulfonic acid, and an inorganic nitrate, preferably ferric nitrate. The c...
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WO/1990/010730A1 |
A surfactant of the general formula: R1SO2NR2C2H4OA (wherein R1 represents a fluoroalkyl group, R2 represents H or a lower alkyl group, and A represents H or SO3H) is added to a cleaning liquid comprising sulfuric acid or sulfuric acid-h...
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WO/1990/005794A1 |
A vegetable tannin is condensed with formaldehyde and an amine to provide an acid soluble product which is useful in a metal treatment solution to enhance corrosion resistance and paint adhesion characteristics of a metal surface.
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WO/1989/011517A1 |
An etching solution for use, for example, in the manufacture of integrated circuits is comprised of an aqueous solution of ammonium fluoride and a wetting amount of a sulfate ester of an alkylphenol polyglycidol ether or an alkyl amine g...
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WO/1989/006639A1 |
A method and apparatus for regenerating non-permanganate manganese species in printed circuit board permanganate etching solutions. The apparatus includes a tank (18), an anode (11), a cathode (16) and rectifier means (28). The etching s...
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WO/1988/003964A1 |
Compositions and methods of using the compositions in preparing ferrous metal components for subsequent surface electroplating by preparing a solution containing an acid and a sequestering agent, immersing the components and abrading med...
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WO/1988/003963A1 |
Compositions and methods of using the compositions in preparing ferrous metal components for subsequent surface electroplating by preparing a solution containing an acid and a sequestering agent, immersing the components and abrading med...
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WO/1987/004451A1 |
A method for the regeneration of aqueous ammonium bifluoride-hydrogen peroxide solder stripping solution used principally in the manufacture of printed circuit boards. The method regenerates the spent solder stripping solution containing...
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WO/1987/003773A1 |
Methods for forming holes of predetermined size in polyimide substrates having metallic layers adhesively attached thereto include selectively removing areas of desired size and shape from the metallic layer; contacting the exposed adhes...
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WO/1986/000085A1 |
An improved alkaline permanganate composition for etching printed circuit boards is provided by incorporating a secondary oxidant in the solution capable of oxidizing manganate ion to permanganate ion.
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WO/1985/005643A1 |
The compositions based on fluorochlorohydrocarbons and phosphoric esters are in the form of aqueous emulsions of the "water-in-oil" type. They are appropriate to clean objects made of various materials, by eliminating dust, fingerprints,...
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WO/1984/001168A1 |
Solder stripping solution (10) having an extended life for stripping and removing tin-lead alloy solder or tin deposits (22) from entire circuits or tabs (26a, 26n) with an insignificant amount of attack on the base epoxy laminate (18) o...
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JP2024022657A |
The present invention provides a processing liquid that can improve the smoothness of a processed portion when etching SiGe. Furthermore, a processing liquid container for the above processing liquid is provided. A treatment liquid conta...
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JP2024016116A |
The present invention provides a novel method that can efficiently produce a fluorine-containing aromatic compound. [Solution] In a solvent containing a nitrogen-containing organic compound, in the presence of a phosphonium salt having o...
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JP2024500634A |
The present invention provides a method of etching at least one surface of a plastic substrate, the method comprising steps (A) to (C), and step (B) comprising etching one or more fluorine-free surface active compounds. and step (C) comp...
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JP7377115B2 |
To provide an etching method that can etch both thermoplastic polyimide resin and polyimide resin, and obtain an excellent etching shape having no large etching deviation between an end of a thermoplastic polyimide resin layer and an end...
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JP7360055B2 |
The present disclosure addresses the problem of producing an alkene having a double bond in position 2 and having four or more carbons by means of isomerization. This method for producing an alkene having a double bond at position 2 and ...
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JP2023542687A |
Compositions and methods are provided for selectively etching hardmask layers and/or photoresist etch residues relative to existing low-k dielectric layers. More particularly, the present invention relates to compositions and processes f...
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JP7348535B2 |
The present disclosure addresses the problem of producing a hydrogenated alkene by way of hydrogen substitution. This alkene manufacturing method includes a step in which a hydrogenation reaction is conducted in the presence of an activa...
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JP7343796B2 |
A fluoroalkyne compound can be efficiently synthesized from a fluoroalkane compound by a method for producing a fluoroalkyne compound represented by formula (1): R1C≡CR2 (1)where
in R1 and R2 are th...
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JP7341880B2 |
To provide an etching method with which both a thermoplastic polyimide resin and a polyimide resin can be etched, which brings about no large deviation between an end part of the thermoplastic polyimide resin and that of the polyimide re...
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