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Matches 1 - 50 out of 2,143

Document Document Title
WO/2020/185745A1
Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon mater...  
WO/2020/185762A1
Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solv...  
WO/2020/180016A1
The present invention relates to an etching composition for a silicon nitride film, comprising an organic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention has an effect of selectively rem...  
WO/2020/166677A1
Provided is, inter alia, a processing solution for semiconductor wafers for use in a semiconductor formation process. Provided is, inter alia, a processing solution that contains (A) hypochlorite ions and (B) an alkylammonium salt repres...  
WO/2020/158610A1
The present invention provides an etching liquid which is useful for a resin composition and the like, said resin composition containing an alkali-insoluble resin, 20-40% by mass of an organic filler and 30-50% by mass of an inorganic fi...  
WO/2020/157229A1
The present invention relates to a device and method for treating wafers. According to the invention, the wafers are transported in vertical alignment through the process solution used for treating the wafers, as a result of which it is ...  
WO/2020/159771A1
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer. The present di...  
WO/2020/141714A1
The present invention relates to a method for manufacturing an aluminum alloy anodized film having a superhydrophobic surface and an aluminum alloy having an anodized film with a superhydrophobic surface manufactured by the method. The p...  
WO/2020/123126A1
The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water,...  
WO/2020/122454A1
The present invention relates to a highly selective etchant for a semiconductor and, more specifically, to a highly selective etchant for a semiconductor, comprising: an inorganic acid; a silane-based modifier; and a sulfur-based aid. In...  
WO/2020/121248A1
Compositions including one or more fluorochemical surfactants of the formula: (I) where Rf is a perfluoroalkyl group, each of R1, R2 and R3 are C1-C20 alkyl, alkoxy, or aryl; and R4 is alkylene, arylene of a combination thereof. R4 is pr...  
WO/2020/117325A1
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.  
WO/2020/097778A1
Embodiments of compositions of a wet etchant and additive thereto for selectively etching silicon nitride to silicon oxide are disclosed. In an example, a composition of an additive to a phosphoric acid etchant includes an inhibitor and ...  
WO/2020/102228A1
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the...  
WO/2020/085447A1
The present invention relates to an etchant for resin compositions each comprising an alkali-insoluble resin and 50-80 mass% inorganic filler, the etchant being characterized by including 15-45 mass% alkali metal hydroxide as a first ing...  
WO/2020/040386A1
An insulating film etchant composition of embodiments of the present invention comprises: phosphoric acid; a first silane compound including a silane compound having passivation groups substituted for two or more alkyl groups inclusive o...  
WO/2020/040385A1
An insulation film etchant composition according to embodiments of the present invention comprises a phosphoric acid, a silane compound having a C1-C4 hydroxyalkoxy group, and the remainder of water. It is possible to effectively passiva...  
WO/2020/017723A1
Insulating film etchant compositions according to embodiments of the present invention comprise a phosphoric acid, a silane compound having a hydroxyalkyl group or an equivalent thereof, and extra water. The present invention can passiva...  
WO/2020/013485A1
Provided are a composition for etching a silicon nitride film and a method for etching a silicon nitride film by using same, the composition comprising: an inorganic acid or a salt thereof; water; a compound of chemical formula 1; a comp...  
WO/2020/009793A1
A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluori...  
WO/2019/225856A1
Disclosed are a composition for etching a silicon nitride film, the composition comprising: a phosphoric acid compound; water; and one or more of a certain silane-based compound and a reaction product thereof, and an etching method using...  
WO/2019/204556A1
A treatment solution and method for removing heavy metal contaminants and oxyanion contaminants from an aqueous solution by promoting the affinity of precipitating the contaminants. The method adjusts the pH and the ORP of the contaminat...  
WO/2019/198935A1
The silicon nitride film etching composition of the present invention comprises a phosphoric acid compound, a polyhydric alcohol, and water. The silicon nitride film etching composition has high selectivity to a silicon nitride film rela...  
WO/2019/199922A1
Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride f...  
WO/2019/182277A1
Disclosed is an etchant composition for a silicon nitride film, comprising: one or more compounds selected from the group consisting of a silyl phosphine oxide-based compound and a silyl phosphine-based compound which are represented by ...  
WO/2019/136398A1
Provided are methods using and making functionalized silicon membranes, such as, for example, functionalized silicon nanomembranes. The methods may combine one or more (e.g., two) surface modification processes (e.g., using a combination...  
WO/2019/087587A1
A treatment device 1 has: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tank 2...  
WO/2019/087588A1
A treatment device 1 having: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tan...  
WO/2019/083643A1
A composition effective for removing contaminates from an electronic device either as a concentrated material or when diluted with water. The composition designed for effective removal of undesirable contaminates from an electronic devic...  
WO/2019/079547A1
The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tantalum (Ta) and/or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a multistep semiconductor ma...  
WO/2019/067836A1
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammo...  
WO/2019/052598A1
The invention relates to a method by means of which surfaces of metal oxides that can be chemically reduced are reduced such that a subsequently applied metal film has increased adhesion. The method according to the invention comprises a...  
WO/2019/051053A1
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionall...  
WO/2019/024328A1
An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may...  
WO/2019/013706A1
A method of texturing photovoltaic silicon wafers There is provided a method of texturing photovoltaic (PV) silicon wafers comprising preparing an acid bath and etching a surface of a PV silicon wafer in the acid bath at a pre-determined...  
WO/2019/012417A1
Methods and systems for removing water from a manganese-based etchant bath are disclosed. Water is removed from the manganese-based etchant bath by transferring a portion of the manganese-based etchant bath to a vacuum evaporator for pro...  
WO/2018/226513A1
Methods of etching of glass articles are disclosed that provide display glass articles with low haze. A specific method etching an aluminosilicate glass article comprising at least one of barium oxide and magnesium oxide in a range of fr...  
WO/2018/182307A1
The present invention relates to a silicon nitride film etching composition, which can minimize the etching rate to a silicon oxide film, can selectively etch a silicon nitride film, leaves no particles on a substrate, and is stable at a...  
WO/2018/182996A1
A textured glass article that includes: a glass substrate comprising a thickness, a primary surface and a bulk composition at the midpoint of the thickness; and a textured region defined by the primary surface and comprising a textured r...  
WO/2018/182968A1
Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures...  
WO/2018/156775A1
The conventional Li-ion batteries use graphite anode, which has a theoretical specific capacity of 372 mAh/g, which limits their application for high capacity energy storage devices. Silicon has been tried because of its high theoretical...  
WO/2018/144577A1
A method of manufacturing a glass article includes application of an etch cream to an edge surface of the article. Application of the etch cream can reduce a density of particles on the edge surface to less than about 200 per 0.1 square ...  
WO/2018/144527A1
A method of manufacturing a glass article includes application of an etch solution to an edge surface of the article. Application of the etch solution can reduce a density of particles on the edge surface to less than about 200 per 0.1 s...  
WO/2018/124705A8
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/136466A1
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop lay...  
WO/2018/124705A1
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/124666A1
A glass etching composition comprises: a basic etchant for etching glass; and a syrup obtained by hydrolyzing starch, wherein the syrup can comprise at least one of glucose, maltose and dextrin, and the basic etchant can comprise hydrofl...  
WO/2018/115338A1
Disclosed is a chromium-free pickling solution for pickling synthetic materials, comprising - one or more oxidizing acids, - 0.1 to 2 g/l of a vanadium compound, measured at 20 °C as vanadium pentoxide, - 1 to 10 g/l of manganese, measu...  
WO/2018/102512A1
A textured glass substrate along with articles comprising a textured glass substrate and methods of making are provided. The substrates retain the mechanical and optical properties of the untextured glass, while the process provides a re...  
WO/2018/092009A1
System with at least two layers as a mean or system for transferring electrically conductive ink adapted to receive and transfer said ink on a textile substrate by a thermal transfer.  

Matches 1 - 50 out of 2,143