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Matches 1 - 50 out of 2,086

Document Document Title
WO/2018/144577A1
A method of manufacturing a glass article includes application of an etch cream to an edge surface of the article. Application of the etch cream can reduce a density of particles on the edge surface to less than about 200 per 0.1 square ...  
WO/2018/144527A1
A method of manufacturing a glass article includes application of an etch solution to an edge surface of the article. Application of the etch solution can reduce a density of particles on the edge surface to less than about 200 per 0.1 s...  
WO/2018/136466A1
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop lay...  
WO/2018/124705A1
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/124705A8
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/124666A1
A glass etching composition comprises: a basic etchant for etching glass; and a syrup obtained by hydrolyzing starch, wherein the syrup can comprise at least one of glucose, maltose and dextrin, and the basic etchant can comprise hydrofl...  
WO/2018/115338A1
Disclosed is a chromium-free pickling solution for pickling synthetic materials, comprising - one or more oxidizing acids, - 0.1 to 2 g/l of a vanadium compound, measured at 20 °C as vanadium pentoxide, - 1 to 10 g/l of manganese, measu...  
WO/2018/102512A1
A textured glass substrate along with articles comprising a textured glass substrate and methods of making are provided. The substrates retain the mechanical and optical properties of the untextured glass, while the process provides a re...  
WO/2018/092009A1
System with at least two layers as a mean or system for transferring electrically conductive ink adapted to receive and transfer said ink on a textile substrate by a thermal transfer.  
WO/2018/083884A1
A treatment device 1 has a treatment tank 2 on the outside of which a constant temperature heater 3 is provided and a supply tank 6 connected via a pipe 4 and a pump 5. Persulfuric acid salt solutions S and S1 of prescribed sulfuric acid...  
WO/2018/070837A1
The present invention relates to an etching solution composition comprising: hydrogen peroxide; a cyclic or aromatic compound including in a molecule, any one or more selected from among oxygen, sulfur, and nitrogen; an amino carboxylic-...  
WO/2017/218147A1
The present invention utilizes novel compositions and methods for stripping and cleaning microelectronics substrates. The composition includes ethylene glycol butyl ether, sulfolane, monoethanolamine, diethylene glycol, dihydroxybenzene,...  
WO/2017/167797A1
The invention relates to a solution for etching titanium based materials, comprising from about 27w% to about 39w% hydrogen peroxide, from about 0.2w% to about 0.5w% potassium hydroxide, and at about 0.002 w% to about 0.02 w% 1,2-Diamino...  
WO/2017/172532A1
A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a ph...  
WO/2017/165637A1
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride-activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with h...  
WO/2017/132441A1
A floor finish, m various embodiments, includes a water-based pigment dispersion and a topcoat formulation having (i) a drier-free water-based polyurethane dispersion, (is) co-solvents in an amount chosen to achieve a cure time of the fi...  
WO/2017/116063A1
The present invention relates to an etchant composition of a metal containing copper, the etchant composition comprising: 1 to 10 wt% of hydrogen peroxide; 1 to 10 wt% of a buffer solution; and 0.3 to 1.0 wt% of inorganic acid, wherein t...  
WO/2017/094754A1
Provided is a novel etching technique for resins, which does not use chromic acid and is able to be put in industrial practice. A method for etching a resin surface, which is characterized by comprising the following steps (a) and (b). (...  
WO/2017/095022A1
The present invention relates to a composition for etching and a method for manufacturing a semiconductor device including an etching process using the composition for etching. The composition for etching comprises: any one first additiv...  
WO/2017/091572A1
A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a h...  
WO/2017/059051A1
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry with highly effective ARC removal, clean capabilities, and superior compatibilities to wide varieties of materials. This invention describes compositions w...  
WO/2017/056285A1
Provided is a technique with which decomposition of permanganic acid can be suppressed at low cost while maintaining the etching performance of the permanganic acid, the technique being achieved by an acidic etching solution including pe...  
WO/2016/184979A1
The invention relates to ink formulations comprising silver nanoparticles. In particular, the invention relates to ink formulations comprising silver nanoparticles, said inks being stable, having improved conductivity and being particula...  
WO/2016/172315A1
A transparent conductive film (10) that has a substrate (14) having a surface (14a, 14b), a nanowire layer (12, 12a) over one or more portions of the surface (14a, 14b) of the substrate (14), and a conductive layer (16, 16a) on the porti...  
WO/2016/163184A1
Disclosed is a dry etching gas which is formed of 1, 3, 3, 3-tetrafluoropropene with a purity of 99.5% by mass or more, with the total of concentrations of metal components, namely Fe, Ni, Cr, Al and Mo, included in the gas being 500 ppb...  
WO/2016/096083A1
The present invention relates to an etching composition for the etching of surfaces consisting of Si, SiO2, SiNx or transparent conductive oxides (TCO), comprising at least one aqueous phase and at least an agent for increasing etch rate...  
WO/2016/090063A1
In described examples, an etchant for simultaneously etching NiFe and AIN with approximately equal etch rates includes phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AIN may be used to form ...  
WO/2016/056788A3
The present invention relates to a glass substrate manufacturing method and, more specifically, to a glass substrate manufacturing method capable of increasing a bonding force with an electroless plating layer to be plated on the surface...  
WO/2016/053191A1
There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ion...  
WO/2016/050427A1
The invention relates to a method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong...  
WO/2016/044122A1
Solutions suitable for etch cutting glass substrates are disclosed. The solutions can include: (a) about 20.1 to about 25 weight % of hydrofluoric acid; (b) about 7 to about 10.5 weight % of an organic carboxylic acid; (c) 0 to about 10 ...  
WO/2016/042408A3
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same there...  
WO/2016/017762A1
Provided is a composition for forming a resin thin film for hydrofluoric acid etching comprising a hydrogenated polybutadiene compound having (meth)acrylic groups and a radical polymerization initiator.  
WO/2015/179425A9
A jettable etchant composition includes 1 to 90 wt% active ingredient, and a remainder containing any combination of the following: 10 to 90 wt% solvent, 0 to 10 wt% reducing agents, <1 to 20 wt% pickling agent, 0 to 5 wt% surfactant, an...  
WO/2015/179425A3
A jettable etchant composition includes 1 to 90 wt% active ingredient, and a remainder containing any combination of the following: 10 to 90 wt% solvent, 0 to 10 wt% reducing agents, <1 to 20 wt% pickling agent, 0 to 5 wt% surfactant, an...  
WO/2015/168881A1
Disclosed in the present invention is a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjusting agent having the effect of adjusting thickness, and water. At t...  
WO/2015/160006A1
According to the present invention, an etchant composition containing: at least one compound selected from the group consisting of potassium nitrate, aluminum nitrate, or hydrates thereof; any pH adjusting agent; and any hydrogen peroxid...  
WO/2015/142392A1
Dental etchant compositions, processes for making the same, and methods for using the dental etchant compositions are disclosed. The dental etchant compositions include at least one acid and one or more dentin collagen cross-linking agen...  
WO/2015/133730A1
The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method and, more specifically, to a texture etchant composition for a crystalline silicon wafer and an etching method, w...  
WO/2015/122250A1
Provided is a liquid composition for etching, having, a suitable etching rate during etching of oxides comprising indium, zinc, tin, and oxygen, little change in the etching rate during dissolving of oxides, substantially no occurrence o...  
WO/2015/113890A3
The invention relates to a method for producing textures or polishes on the surface of monocrystalline silicon wafers by means of anisotropic etching processes. The problem addressed by the invention is that of developing a method for pr...  
WO/2015/112419A1
The invention relates to a method for patterning one or more portions of a microstructure comprised of a flexible substrate, a conductor disposed on the substrate, and a metal layer disposed on the conductor, wherein the conductor is com...  
WO/2015/111684A1
This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inc...  
WO/2015/103003A1
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor dep...  
WO/2015/092826A1
The invention concerns a corrosive paste and a working method for realizing a corrosive paste, in particular for application of silk-screen printing on glass. Peculiarity of the invention is that the corrosive paste comprises ammonium bi...  
WO/2015/067339A1
The present invention refers to a method for selectively structuring of a polymer matrix comprising AgNWs (silver nano wires) or silver nano particles (Ag nano ink) or comprising mixtures of AgNWs and silver nano particles on a flexible ...  
WO/2015/064468A1
The present invention provides an etching liquid which has an etching rate that is suitable for etching an oxide consisting essentially of zinc, tin and oxygen, which exhibits little change in etching rate upon dissolution of the oxide, ...  
WO/2015/060196A1
The present invention provides a composition for an etching treatment of a resin material, which comprises an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more, containing acid components at the total concent...  
WO/2015/052736A1
(Semi-) continuous etching method for a fluoropolymer substrate (10) comprising steps of feeding (22) said substrate (10) in the form of a continuous ribbon wherein said substrate defines a primary surface (12), subjecting to at least on...  
WO/2015/041214A1
The present invention relates to an alkaline etching liquid for processing the surface of a semiconductor substrate for a solar battery, the etching liquid including at least one item selected from the group comprising lignin sulphonic a...  

Matches 1 - 50 out of 2,086