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WO/2024/077874A1 |
Disclosed in the present invention is a selective etching solution for a 3D NAND structural sheet of silicon nitride/silicon oxide; and the etching solution comprises a silane coupling agent, phosphoric acid, and water. The etching solut...
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WO/2024/077875A1 |
The present invention provides a selective etching solution for a 3D NAND structural sheet. The etching solution comprises phosphoric acid, a silane additive 1, and a silane additive 2, with the balance being water. The etching solution ...
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WO/2024/076536A1 |
The present invention relates to the use of a composition for selectively etching a silicon layer in the presence of an n-doped silicon layer at a temperature from 10 to 50 °C, the composition comprising: (a) 0.1 to 15 % by weight of a ...
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WO/2024/063871A1 |
A method of processing a substrate that includes: flowing nitrogen-containing (N-containing) gas, dioxygen (O2), a noble gas, and a fluorocarbon into the plasma processing chamber, the plasma processing chamber configured to hold a subst...
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WO/2024/059467A1 |
START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORM ETCH GAS INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER STOP
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WO/2024/058863A1 |
Embodiments of a wet etch process and method are disclosed to provide uniform etching of material formed within features (such as, e.g., trenches, holes, slits, etc.) having different critical dimension (CD). By combining a non-aqueous o...
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WO/2024/053819A1 |
The present invention relates to a surface treatment composition comprising hydrofluosilicic acid (H2SiF6) and hydrofluoric acid (HF), and a surface treatment method using same. The composition can be used for processing (for example, et...
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WO/2024/040671A1 |
The invention belongs to the field of fine chemical engineering, and relates to an ITO etching solution and a usage method thereof. The etching solution is composed of an A phase, a neutralizing solution, and a B phase; the A phase is co...
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WO/2024/034583A1 |
The present invention provides a method for producing a halogenated alkene compound which is represented by general formula (1): R1-CR2=CR3-R4, the method comprising a step for subjecting a halogenated alkane compound which is represente...
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WO/2024/029776A1 |
Disclosed is a plasma etching method. The plasma etching method may comprise: a first step for vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid heptafluoroisopropyl methyl ether (HFE-347mmy); a second step for su...
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WO/2024/025797A1 |
A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the compositi...
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WO/2024/021259A1 |
An automatic batching system for buffered oxide etch production and a batching method thereof. The present invention uses artificial intelligence control technology, and on the basis of a deep neural network model, dynamic implicit featu...
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WO/2024/026380A1 |
In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and water. The polishing composition can have a high copper removal rate of at least 3500 Å/min, a...
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WO/2024/007627A1 |
Disclosed in the present invention is a C-free high-selectivity silicon nitride etching solution, which mainly comprises an inorganic acid, an inorganic silicon compound, a pre-solvent, an inorganic dispersant and water. The etching solu...
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WO/2024/007909A1 |
The present invention provides an etching composition, an etching method and an application. The etching composition comprises phosphoric acid, an organosilicon compound, an oxidizing agent and water. The etching composition of the prese...
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WO/2023/244825A1 |
The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfac...
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WO/2023/239524A1 |
Embodiments relate to a method of forming a nanoporous thin film. The method can involve co-sputtering SiO2 and a sacrificial porogen to form a sacrificial porogen: SiO2 composite film onto a substrate. The method can involve annealing t...
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WO/2023/232322A1 |
The invention relates to a stripping solution (14), to a method (41), and to a device (10) for a wet chemical removal of a PVD or CVD titanium nitride layer from a hard metal support element using such a solution (14). According to the i...
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WO/2023/229078A1 |
According to the inventive concept, an etching composition includes about 20 wt% to about 30 wt% of an oxidizer, a buffer including at least one among ammonium phosphate and a material represented by Formula 1, and a pH adjustor includin...
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WO/2023/230235A1 |
Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a...
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WO/2023/219943A1 |
Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passi...
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WO/2023/211032A1 |
According to various embodiments of the present disclosure, a method for implementing a structural color comprises the operations of: forming an oxide layer on at least a part of the surface of a metal substrate; coloring the oxide layer...
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WO/2023/182602A1 |
The present invention relates to an etchant composition for etching a molybdenum film and a modified molybdenum film while suppressing the etching of an aluminum oxide film and a silicon oxide film, and an etching method therefor, wherei...
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WO/2023/168170A1 |
Various embodiments described herein relate to methods and apparatus for etching a semiconductor substrate to remove a target material from a surface of the substrate. Generally, the techniques described herein are thermal techniques tha...
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WO/2023/165674A1 |
What are described are novel defoamer formulations (A) containing (1) triacylglycerides of the formula (I) in which R may be the same or different and is a saturated or unsaturated C5-C13-hydrocarbyl radical, (2) fillers, (3) organopolys...
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WO/2023/128047A1 |
The present invention relates to an etchant composition for preparing graphene having low sheet resistance, and more particularly, to a composition containing sulfuric acid, hydrogen peroxide, an N-heterocyclic aromatic compound, aromati...
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WO/2023/114730A1 |
The present disclosure relates to use of aqueous acid for developing or treating a radiation-sensitive film. The aqueous acid can be employed to form a pattern by a positive tone wet development process or to treat a developed pattern by...
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WO/2023/114162A1 |
An etchant comprises: greater than or equal to 20 wt% and less than or equal to 45 wt% ammonium bifluoride; greater than or equal to 0.25 wt% and less than or equal to 10 wt% of a silicon compound; greater than or equal to 5 wt% and less...
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WO/2023/102726A1 |
Disclosed in the present invention is a buffer etching solution for a non-metal oxide film. The buffer etching solution comprises hydrofluoric acid, ammonium fluoride, a penetrant, water and a composite modifier, wherein the composite mo...
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WO/2023/097393A1 |
Silica-encapsulated tracers suitable for use in tracing fracturing fluid in subsurface formations are described herein. More specifically, described herein is an improved method of encapsulating tracers for reduced adsorption on a rock m...
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WO/2023/099002A1 |
The present invention provides a process for producing etched silicon-containing materials, wherein in a first step, through thermal decomposition of silicon precursors on porous particles, silicon is deposited in the pores and on the su...
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WO/2023/101837A1 |
An article includes a glass, glass-ceramic, or ceramic substrate having a first surface and a textured region comprising surface features defined by the first surface. The surface features each have a feature size and a feature position ...
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WO/2023/096266A1 |
The present invention relates to a silicon nitride film etching composition and a preparation method therefor, and the silicon nitride film etching composition of the present invention may comprise phosphoric acid, hydrogen fluoride, sil...
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WO/2023/074510A1 |
The present invention makes it possible to efficiently produce a perfluoroalkyl group-containing aromatic compound by reacting, in a solvent, a compound represented by general formula (3): R6Cu (3) [where R6 indicates a perfluoroalkyl gr...
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WO/2023/069409A1 |
A composition and method for etching molybdenum-containing film on a microelectronic device substrate is provided. A microelectronic device substrate is contacted with the composition of the invention for a time sufficient to at least pa...
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WO/2023/068395A1 |
A wet etching method of the present invention comprises: cleaning glass; wet-etching the cleaned glass to form a nano-scale pattern; and cleaning and drying the nano-patterned glass, wherein a wet etching solution used in the wet etching...
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WO/2023/066847A1 |
The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals.
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WO/2023/064145A1 |
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
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WO/2023/060792A1 |
A combined etching liquid, an etching system and an etching method of the present invention can be applied to the wet etching of a non-conductive thin film in semiconductor manufacturing. The combined etching liquid comprises a first etc...
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WO/2023/034131A1 |
The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. Th...
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WO/2023/286753A1 |
The present disclosure addresses the problem of producing an alkene having a double bond in position 2 and having four or more carbons by means of isomerization. This method for producing an alkene having a double bond at position 2 and ...
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WO/2023/286752A1 |
The present disclosure addresses the problem of producing a hydrogenated alkene by way of hydrogen substitution. This alkene manufacturing method includes a step in which a hydrogenation reaction is conducted in the presence of an activa...
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WO/2022/262340A1 |
Disclosed are an alkali corrosion adjuvant for cleaning winding-plated polysilicon and an application thereof. Components, in percentage by mass, in the alkali corrosion adjuvant are: 2%-5% of polyether, 1%-2.5% of an anionic surfactant,...
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WO/2022/261216A1 |
Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compo...
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WO/2022/251245A1 |
Various embodiments herein relate to methods and apparatus for etching a memory hole in a stack of materials on a substrate. In some cases, the stack includes alternating layers of silicon oxide and silicon nitride. In other cases, the s...
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WO/2022/251068A1 |
The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric a...
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WO/2022/246356A1 |
The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibitin...
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WO/2022/241126A1 |
The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described...
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WO/2022/230589A1 |
A method for producing a fluoroalkyne compound represented by the general formula R1C≡CR2 (1) [wherein R1 and R2 are the same or different and represent a fluorine atom or a fluoroalkyl group], the method comprising a step in which a f...
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WO/2022/207559A1 |
Disclosed is a method for pickling polyamide, comprising steps a) bringing the polyamide in contact with a pickling solution containing: - a mixture of at least two inorganic acids; - MHF2, where M is an alkali ion or an ammonium ion; - ...
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