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Matches 1 - 50 out of 2,096

Document Document Title
WO/2019/136398A1
Provided are methods using and making functionalized silicon membranes, such as, for example, functionalized silicon nanomembranes. The methods may combine one or more (e.g., two) surface modification processes (e.g., using a combination...  
WO/2019/087587A1
A treatment device 1 has: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tank 2...  
WO/2019/087588A1
A treatment device 1 having: a treatment tank 2; an electrolytic cell 6 comprising a diamond electrode continuing on from a pipe 4 comprising a circulation pump 5; and a pipe 7 supplying from this electrolytic cell 6 to the treatment tan...  
WO/2019/083643A1
A composition effective for removing contaminates from an electronic device either as a concentrated material or when diluted with water. The composition designed for effective removal of undesirable contaminates from an electronic devic...  
WO/2019/079547A1
The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tantalum (Ta) and/or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a multistep semiconductor ma...  
WO/2019/067836A1
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammo...  
WO/2019/052598A1
The invention relates to a method by means of which surfaces of metal oxides that can be chemically reduced are reduced such that a subsequently applied metal film has increased adhesion. The method according to the invention comprises a...  
WO/2019/051053A1
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionall...  
WO/2019/024328A1
An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may...  
WO/2019/013706A1
A method of texturing photovoltaic silicon wafers There is provided a method of texturing photovoltaic (PV) silicon wafers comprising preparing an acid bath and etching a surface of a PV silicon wafer in the acid bath at a pre-determined...  
WO/2019/012417A1
Methods and systems for removing water from a manganese-based etchant bath are disclosed. Water is removed from the manganese-based etchant bath by transferring a portion of the manganese-based etchant bath to a vacuum evaporator for pro...  
WO/2018/226513A1
Methods of etching of glass articles are disclosed that provide display glass articles with low haze. A specific method etching an aluminosilicate glass article comprising at least one of barium oxide and magnesium oxide in a range of fr...  
WO/2018/182307A1
The present invention relates to a silicon nitride film etching composition, which can minimize the etching rate to a silicon oxide film, can selectively etch a silicon nitride film, leaves no particles on a substrate, and is stable at a...  
WO/2018/182996A1
A textured glass article that includes: a glass substrate comprising a thickness, a primary surface and a bulk composition at the midpoint of the thickness; and a textured region defined by the primary surface and comprising a textured r...  
WO/2018/182968A1
Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures...  
WO/2018/156775A1
The conventional Li-ion batteries use graphite anode, which has a theoretical specific capacity of 372 mAh/g, which limits their application for high capacity energy storage devices. Silicon has been tried because of its high theoretical...  
WO/2018/144577A1
A method of manufacturing a glass article includes application of an etch cream to an edge surface of the article. Application of the etch cream can reduce a density of particles on the edge surface to less than about 200 per 0.1 square ...  
WO/2018/144527A1
A method of manufacturing a glass article includes application of an etch solution to an edge surface of the article. Application of the etch solution can reduce a density of particles on the edge surface to less than about 200 per 0.1 s...  
WO/2018/136466A1
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop lay...  
WO/2018/124705A1
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/124705A8
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a...  
WO/2018/124666A1
A glass etching composition comprises: a basic etchant for etching glass; and a syrup obtained by hydrolyzing starch, wherein the syrup can comprise at least one of glucose, maltose and dextrin, and the basic etchant can comprise hydrofl...  
WO/2018/115338A1
Disclosed is a chromium-free pickling solution for pickling synthetic materials, comprising - one or more oxidizing acids, - 0.1 to 2 g/l of a vanadium compound, measured at 20 °C as vanadium pentoxide, - 1 to 10 g/l of manganese, measu...  
WO/2018/102512A1
A textured glass substrate along with articles comprising a textured glass substrate and methods of making are provided. The substrates retain the mechanical and optical properties of the untextured glass, while the process provides a re...  
WO/2018/092009A1
System with at least two layers as a mean or system for transferring electrically conductive ink adapted to receive and transfer said ink on a textile substrate by a thermal transfer.  
WO/2018/083884A1
A treatment device 1 has a treatment tank 2 on the outside of which a constant temperature heater 3 is provided and a supply tank 6 connected via a pipe 4 and a pump 5. Persulfuric acid salt solutions S and S1 of prescribed sulfuric acid...  
WO/2018/070837A1
The present invention relates to an etching solution composition comprising: hydrogen peroxide; a cyclic or aromatic compound including in a molecule, any one or more selected from among oxygen, sulfur, and nitrogen; an amino carboxylic-...  
WO/2017/218147A1
The present invention utilizes novel compositions and methods for stripping and cleaning microelectronics substrates. The composition includes ethylene glycol butyl ether, sulfolane, monoethanolamine, diethylene glycol, dihydroxybenzene,...  
WO/2017/167797A1
The invention relates to a solution for etching titanium based materials, comprising from about 27w% to about 39w% hydrogen peroxide, from about 0.2w% to about 0.5w% potassium hydroxide, and at about 0.002 w% to about 0.02 w% 1,2-Diamino...  
WO/2017/172532A1
A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a ph...  
WO/2017/165637A1
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride-activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with h...  
WO/2017/132441A1
A floor finish, m various embodiments, includes a water-based pigment dispersion and a topcoat formulation having (i) a drier-free water-based polyurethane dispersion, (is) co-solvents in an amount chosen to achieve a cure time of the fi...  
WO/2017/116063A1
The present invention relates to an etchant composition of a metal containing copper, the etchant composition comprising: 1 to 10 wt% of hydrogen peroxide; 1 to 10 wt% of a buffer solution; and 0.3 to 1.0 wt% of inorganic acid, wherein t...  
WO/2017/094754A1
Provided is a novel etching technique for resins, which does not use chromic acid and is able to be put in industrial practice. A method for etching a resin surface, which is characterized by comprising the following steps (a) and (b). (...  
WO/2017/095022A1
The present invention relates to a composition for etching and a method for manufacturing a semiconductor device including an etching process using the composition for etching. The composition for etching comprises: any one first additiv...  
WO/2017/091572A1
A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a h...  
WO/2017/059051A1
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry with highly effective ARC removal, clean capabilities, and superior compatibilities to wide varieties of materials. This invention describes compositions w...  
WO/2017/056285A1
Provided is a technique with which decomposition of permanganic acid can be suppressed at low cost while maintaining the etching performance of the permanganic acid, the technique being achieved by an acidic etching solution including pe...  
WO/2016/184979A1
The invention relates to ink formulations comprising silver nanoparticles. In particular, the invention relates to ink formulations comprising silver nanoparticles, said inks being stable, having improved conductivity and being particula...  
WO/2016/172315A1
A transparent conductive film (10) that has a substrate (14) having a surface (14a, 14b), a nanowire layer (12, 12a) over one or more portions of the surface (14a, 14b) of the substrate (14), and a conductive layer (16, 16a) on the porti...  
WO/2016/163184A1
Disclosed is a dry etching gas which is formed of 1, 3, 3, 3-tetrafluoropropene with a purity of 99.5% by mass or more, with the total of concentrations of metal components, namely Fe, Ni, Cr, Al and Mo, included in the gas being 500 ppb...  
WO/2016/096083A1
The present invention relates to an etching composition for the etching of surfaces consisting of Si, SiO2, SiNx or transparent conductive oxides (TCO), comprising at least one aqueous phase and at least an agent for increasing etch rate...  
WO/2016/090063A1
In described examples, an etchant for simultaneously etching NiFe and AIN with approximately equal etch rates includes phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AIN may be used to form ...  
WO/2016/056788A3
The present invention relates to a glass substrate manufacturing method and, more specifically, to a glass substrate manufacturing method capable of increasing a bonding force with an electroless plating layer to be plated on the surface...  
WO/2016/053191A1
There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ion...  
WO/2016/050427A1
The invention relates to a method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong...  
WO/2016/044122A1
Solutions suitable for etch cutting glass substrates are disclosed. The solutions can include: (a) about 20.1 to about 25 weight % of hydrofluoric acid; (b) about 7 to about 10.5 weight % of an organic carboxylic acid; (c) 0 to about 10 ...  
WO/2016/042408A3
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same there...  
WO/2016/017762A1
Provided is a composition for forming a resin thin film for hydrofluoric acid etching comprising a hydrogenated polybutadiene compound having (meth)acrylic groups and a radical polymerization initiator.  
WO/2015/179425A9
A jettable etchant composition includes 1 to 90 wt% active ingredient, and a remainder containing any combination of the following: 10 to 90 wt% solvent, 0 to 10 wt% reducing agents, <1 to 20 wt% pickling agent, 0 to 5 wt% surfactant, an...  

Matches 1 - 50 out of 2,096