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Matches 1 - 50 out of 2,045

Document Document Title
WO/2017/132441A1
A floor finish, m various embodiments, includes a water-based pigment dispersion and a topcoat formulation having (i) a drier-free water-based polyurethane dispersion, (is) co-solvents in an amount chosen to achieve a cure time of the fi...  
WO/2017/116063A1
The present invention relates to an etchant composition of a metal containing copper, the etchant composition comprising: 1 to 10 wt% of hydrogen peroxide; 1 to 10 wt% of a buffer solution; and 0.3 to 1.0 wt% of inorganic acid, wherein t...  
WO/2017/094754A1
Provided is a novel etching technique for resins, which does not use chromic acid and is able to be put in industrial practice. A method for etching a resin surface, which is characterized by comprising the following steps (a) and (b). (...  
WO/2017/095022A1
The present invention relates to a composition for etching and a method for manufacturing a semiconductor device including an etching process using the composition for etching. The composition for etching comprises: any one first additiv...  
WO/2017/091572A1
A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a h...  
WO/2017/059051A1
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry with highly effective ARC removal, clean capabilities, and superior compatibilities to wide varieties of materials. This invention describes compositions w...  
WO/2017/056285A1
Provided is a technique with which decomposition of permanganic acid can be suppressed at low cost while maintaining the etching performance of the permanganic acid, the technique being achieved by an acidic etching solution including pe...  
WO/2016/184979A1
The invention relates to ink formulations comprising silver nanoparticles. In particular, the invention relates to ink formulations comprising silver nanoparticles, said inks being stable, having improved conductivity and being particula...  
WO/2016/172315A1
A transparent conductive film (10) that has a substrate (14) having a surface (14a, 14b), a nanowire layer (12, 12a) over one or more portions of the surface (14a, 14b) of the substrate (14), and a conductive layer (16, 16a) on the porti...  
WO/2016/163184A1
Disclosed is a dry etching gas which is formed of 1, 3, 3, 3-tetrafluoropropene with a purity of 99.5% by mass or more, with the total of concentrations of metal components, namely Fe, Ni, Cr, Al and Mo, included in the gas being 500 ppb...  
WO/2016/096083A1
The present invention relates to an etching composition for the etching of surfaces consisting of Si, SiO2, SiNx or transparent conductive oxides (TCO), comprising at least one aqueous phase and at least an agent for increasing etch rate...  
WO/2016/090063A1
In described examples, an etchant for simultaneously etching NiFe and AIN with approximately equal etch rates includes phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AIN may be used to form ...  
WO/2016/056788A3
The present invention relates to a glass substrate manufacturing method and, more specifically, to a glass substrate manufacturing method capable of increasing a bonding force with an electroless plating layer to be plated on the surface...  
WO/2016/053191A1
There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ion...  
WO/2016/050427A1
The invention relates to a method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong...  
WO/2016/044122A1
Solutions suitable for etch cutting glass substrates are disclosed. The solutions can include: (a) about 20.1 to about 25 weight % of hydrofluoric acid; (b) about 7 to about 10.5 weight % of an organic carboxylic acid; (c) 0 to about 10 ...  
WO/2016/042408A3
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same there...  
WO/2016/017762A1
Provided is a composition for forming a resin thin film for hydrofluoric acid etching comprising a hydrogenated polybutadiene compound having (meth)acrylic groups and a radical polymerization initiator.  
WO/2015/179425A9
A jettable etchant composition includes 1 to 90 wt% active ingredient, and a remainder containing any combination of the following: 10 to 90 wt% solvent, 0 to 10 wt% reducing agents, <1 to 20 wt% pickling agent, 0 to 5 wt% surfactant, an...  
WO/2015/179425A3
A jettable etchant composition includes 1 to 90 wt% active ingredient, and a remainder containing any combination of the following: 10 to 90 wt% solvent, 0 to 10 wt% reducing agents, <1 to 20 wt% pickling agent, 0 to 5 wt% surfactant, an...  
WO/2015/168881A1
Disclosed in the present invention is a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjusting agent having the effect of adjusting thickness, and water. At t...  
WO/2015/160006A1
According to the present invention, an etchant composition containing: at least one compound selected from the group consisting of potassium nitrate, aluminum nitrate, or hydrates thereof; any pH adjusting agent; and any hydrogen peroxid...  
WO/2015/142392A1
Dental etchant compositions, processes for making the same, and methods for using the dental etchant compositions are disclosed. The dental etchant compositions include at least one acid and one or more dentin collagen cross-linking agen...  
WO/2015/133730A1
The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method and, more specifically, to a texture etchant composition for a crystalline silicon wafer and an etching method, w...  
WO/2015/122250A1
Provided is a liquid composition for etching, having, a suitable etching rate during etching of oxides comprising indium, zinc, tin, and oxygen, little change in the etching rate during dissolving of oxides, substantially no occurrence o...  
WO/2015/113890A3
The invention relates to a method for producing textures or polishes on the surface of monocrystalline silicon wafers by means of anisotropic etching processes. The problem addressed by the invention is that of developing a method for pr...  
WO/2015/112419A1
The invention relates to a method for patterning one or more portions of a microstructure comprised of a flexible substrate, a conductor disposed on the substrate, and a metal layer disposed on the conductor, wherein the conductor is com...  
WO/2015/111684A1
This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inc...  
WO/2015/103003A1
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor dep...  
WO/2015/092826A1
The invention concerns a corrosive paste and a working method for realizing a corrosive paste, in particular for application of silk-screen printing on glass. Peculiarity of the invention is that the corrosive paste comprises ammonium bi...  
WO/2015/067339A1
The present invention refers to a method for selectively structuring of a polymer matrix comprising AgNWs (silver nano wires) or silver nano particles (Ag nano ink) or comprising mixtures of AgNWs and silver nano particles on a flexible ...  
WO/2015/064468A1
The present invention provides an etching liquid which has an etching rate that is suitable for etching an oxide consisting essentially of zinc, tin and oxygen, which exhibits little change in etching rate upon dissolution of the oxide, ...  
WO/2015/060196A1
The present invention provides a composition for an etching treatment of a resin material, which comprises an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more, containing acid components at the total concent...  
WO/2015/052736A1
(Semi-) continuous etching method for a fluoropolymer substrate (10) comprising steps of feeding (22) said substrate (10) in the form of a continuous ribbon wherein said substrate defines a primary surface (12), subjecting to at least on...  
WO/2015/041214A1
The present invention relates to an alkaline etching liquid for processing the surface of a semiconductor substrate for a solar battery, the etching liquid including at least one item selected from the group comprising lignin sulphonic a...  
WO/2015/038295A1
A method comprising etching a film comprising electrically conductive structures according to a pattern using an aqueous etching solution to provide an etched region having a first conductivity and an unetched region having a second cond...  
WO/2015/031620A1
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one...  
WO/2015/020243A1
The present invention relates to a texture-etching solution composition for crystalline silicon wafers, and a texture-etching method and, more specifically, to: a texture-etching solution composition for crystalline silicon wafers which ...  
WO/2015/008093A1
The invention relates to a method of etching silicon by metal-assisted chemical etching (MACE). In the method, a silicon surface is functionalised; a metal or metal ion is bound to the functionalised surface; the metal ion, if used, is r...  
WO/2014/205285A1
Provided in various embodiments are methods for removing cured resin coatings from a resin-coated substrate formed of a substrate having the cured resin coating thereon by soaking the resin-coated substrate in a concentrated sulfuric aci...  
WO/2014/200985A2
The present invention relates generally to the field of semiconductors and/or semiconductor structures (e.g., solar cells, etc.), to chemical compositions for manufacturing such semiconductors and/or semiconductor structures, and/or to m...  
WO/2014/195472A1
The invention relates to a method for treating a surface of an object, comprising steps consisting in bringing the surface to be treated in contact with a diffusion intermediate, then maintaining said surface to be treated in contact wit...  
WO/2014/197808A1
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having s...  
WO/2014/192266A1
Provided is an etching composition that contains: a salt that comprises a cation and an anion having a structure in which a fluorine atom and a phosphorus atom are joined by a single bond; and a solvent.  
WO/2014/176001A1
A method of regenerating an etch solution comprising a metastable complex of manganese(III) ions in a strong acid is described in which at least a portion of the manganese(III) ions in the metastable complex have been destabilized, causi...  
WO/2014/175071A1
The purpose of the present invention is to provide a liquid composition used in etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate...  
WO/2014/138064A1
Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device havi...  
WO/2014/094103A1
The invention relates to the use of thionyl chloride and related materials for dry etching of internal surfaces of metal-organic vapour phase epitaxy (MOVPE) reactors to remove deposits. The method is also useful for the dry etching of p...  
WO/2014/089941A1
Provided is an etchant, which is formed by the reaction of sulphuric acid and ammonium persulfate, the mass concentration of ammonium persulfate being 1-25%. The sulphuric acid is a sulphuric acid with a mass concentration of 98%. Also p...  
WO/2014/087004A1
The present invention relates to a process for metallizing nonconductive plastics using an etching solution free of hexavalent chromium. The etching solution is based on an sulphuric acidic solution comprising a source of chlorate ions a...  

Matches 1 - 50 out of 2,045