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WO/2014/080885A1 |
[Problem] To provide a negative electrode for an electrical device such as a Li-ion secondary battery, said negative electrode exhibiting well-balanced characteristics, namely maintaining a high cycle characteristic, while also having a ...
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WO/2014/080896A1 |
[Problem] To provide a negative electrode for an electrical device such as a lithium ion secondary battery that maintains high cycle characteristics, that has a high initial capacity, and that exhibits well-balanced characteristics. [Sol...
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WO/2014/080886A1 |
[Problem] To provide a negative electrode for an electrical device such as a Li ion secondary battery, the electrode exhibiting a good balance of characteristics such as high initial capacity and maintaining high cycle characteristics. [...
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WO/2014/080897A1 |
[Problem] To provide a negative electrode for an electrical device such as a lithium ion secondary battery that maintains high cycle characteristics, that has a high initial capacity, and that exhibits well-balanced characteristics. [Sol...
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WO/2014/080890A1 |
[Problem] To provide a negative electrode for an electrical device such as a lithium ion secondary battery that maintains high cycle characteristics, that has a high initial capacity, and that exhibits well-balanced characteristics. [Sol...
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WO/2014/073392A1 |
Provided is a powder for use in the formation of a sprayed layer, which contains a Mo2NiB2-type complex boride, said powder being characterized by having a chemical composition comprising 4.0 to 6.0 wt% of B, 35.5 to 53.25 wt% of Mo, 10....
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WO/2014/073629A1 |
A copper alloy having good abrasion resistance is provided. The copper alloy is characterized: by containing 25.0 wt% to 48.0 wt% of zinc, 1.0 wt% to 7.0 wt% of manganese, and 0.5 wt% to 3.0 wt% of silicon; and by having a nickel content...
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WO/2014/073630A1 |
A copper alloy having good seizure resistance is provided. The copper alloy is characterized by containing 25.0 wt% to 48.0 wt% of zinc, 1.0 wt% to 7.0 wt% of manganese, and 0.5 wt% to 3.0 wt% of silicon. The copper alloy is further char...
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WO/2014/069180A1 |
Provided are: a surface-coating material having excellent cracking resistance and peeling resistance and also having excellent high-temperature corrosion resistance properties; and a poppet valve coated with the surface-coating material....
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WO/2014/053419A2 |
Improved mechanical properties can be achieved by the introduction of quasi-crystals, which have mechanical properties comparable to those of ceramics, but have thermal expansion coefficients matching those of metallic materials or metal...
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WO/2014/049874A1 |
The present invention provides a metal material for uses in electrical/electronic devices, which is characterized by being formed of 20-50% by mass of Ag, 20-50% by mass of Pd, 10-40% by mass of Cu and 0.5-30% by mass of Co, and which is...
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WO/2014/044800A1 |
An alloy is provided having the composition TixZryCozR1-x-y-z wherein R represents any element other than Ti, Zr, or Co 0.182 ≤ x ≤ 0.718 0.154 ≤ y ≤ 0.681 0.08 ≤ z ≤ 0.3 and 0.95 ≤ x+y+z ≤ 1. the alloy may be used to bra...
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WO/2014/046289A1 |
The purpose of the present invention is to provide a coating structure material having excellent magnesium erosion resistance, which provides resistance to erosion caused by molten magnesium and molten magnesium alloys. The present inven...
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WO/2014/027636A1 |
Provided is a Fe-Co alloy sputtering target material that does not crack during sputtering. This Fe-Co alloy sputtering target material comprises a Fe-Co-M alloy represented by formula (1): (Fex-Co100-x)100-yMy (In the formula, the atomi...
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WO/2014/024271A1 |
Provided is an Sn-Sb-Ag-Cu based high-temperature lead-free solder alloy which does not form any low-melting phase even when solidified at a low cooling rate and which exhibits excellent joint reliability. This solder alloy has an alloy ...
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WO/2014/024715A1 |
Provided is a high-temperature lead-free solder alloy having excellent tensile strength and elongation in a high-temperature environment of 250ºC. In order to make the structure of an Sn-Sb-Ag-Cu solder alloy finer and cause stress appl...
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WO/2014/021465A1 |
Provided are an alloy material having excellent electrical conductivity and high hardness and excellent workability for use in a contact probe, a contact probe consisting of this alloy material, and a connection terminal. In a compositio...
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WO/2014/014126A1 |
A thermoelectric conversion material which is composed of a polycrystalline body that is represented by composition formula (1) and has an MgAgAs-type crystal structure. This thermoelectric conversion material is characterized in that Mg...
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WO/2014/007278A1 |
In order to provide a valve seat which is made of an iron-base sintered alloy having excellent abrasion resistance and machinability and which is usable in a diesel engine accommodating an output increase, the present invention comprises...
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WO/2013/183790A1 |
Provided is a method for manufacturing a CIGS sputtering target in which it is possible to simplify the process and improve productivity while preventing rapid selenization of the raw material. The method for manufacturing a CIGS sputter...
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WO/2013/183670A1 |
This Ni-based alloy is constituted of chemical components which comprise C, Si, Mn, Cr, Mo, Co, Al, Ti, B, P, S, and, as the remainder, Ni and impurities. If the average crystal grain diameter, in unit of µm, of the γ phase contained i...
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WO/2013/179167A1 |
The present invention is inherent to an improved mercury dosing composition, to a method for dispensing mercury with this composition and to discharge lamps containing such composition.
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WO/2013/175290A1 |
The invention concerns an alloy for braze welding, comprising 18% to 29% silver by weight, 12% to 30% zinc by weight, 0.2% to 5% manganese by weight, 0.001% to 5% nickel by weight, 0.001% to 5% indium by weight, optionally 0.001% to 6% t...
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WO/2013/142565A1 |
A brazing alloy is provided in the form of a wire, rod or preform., and is made of, in weight percent: 3-7.5% P, 0.1 -1.9% Zn, 0-74.7% Ag, 0-80% An, 0-10% Sn, 0-5% Ni, 0-3% each of Si, Mn, Li, and Ge, and the balance copper in an amount ...
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WO/2013/133110A1 |
Provided is a CVD device wherein it is possible to reduce the particle contamination of a substrate. This CVD device for forming a film on a substrate by means of the CVD method is equipped with a chamber (101), a substrate holder (104) ...
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WO/2013/133690A1 |
A technique to increase the elastic compliance and plastic energy dissipation ability and reduce the aging effect of the low Ag-content Sn-Ag-Cu lead-free solder alloy is disclosed. In this particular exemplary embodiment, the technique ...
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WO/2013/115887A2 |
Braze materials, brazing processes, and coatings produced therefrom, for example, a wear-resistant coating suitable for protecting surfaces subjected to wear at high temperatures. The braze material includes first particles formed of a m...
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WO/2013/111143A1 |
An alloy containing precious metals comprises copper 18 ± 5%, zinc 36 ± 5%, lead 18 ± 5%, iron 12 ± 5% and trace quantities of precious metals such as gold, silver, and palladium etc. The alloy is produced by using extracts of ninete...
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WO/2013/110260A1 |
The invention relates to a method for producing a component from a TiAl alloy, wherein the component is shaped by forging, in particular isothermal forging, and is subsequently subjected to at least one heat treatment, wherein in the fir...
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WO/2013/108599A1 |
A wiring substrate, having an insulating resin layer, a plurality of wires, and a via hole conductor. The wires are arranged via the insulating resin layer and are formed using copper foil. The via hole conductor is provided so as to pen...
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WO/2013/106554A1 |
A high temperature oxidation resistant nickel-aluminide alloy compostion and furnace rolls formed therefrom. The inventive nickel-aluminide alloy composition comprises 0.08 - 0.1 wt.% Zr, 2.5 - 3.0 wt.% Mo, 7.5 - 8.5 wt.% Al, 7.5 - 8.5 w...
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WO/2013/102635A1 |
A known plunger for use in manufacturing glass containers comprises a first portion to contact with a gob of molten glass, and a second portion, whereby at least the first portion is coated with a metal coating of a self-fluxing alloy. S...
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WO/2013/099682A1 |
The present invention provides a metallic material for electric/electronic devices, which is produced by adding 0.1 to 5.0 mass% of Co or 0.1 to 5.0 mass% of Ni to 20 to 50 mass% of Ag, 20 to 50 mass% of Pd and 10 to 40 mass% of Cu, has ...
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WO/2013/099441A1 |
This negative electrode active material for an electrical device comprises an alloy that contains constituents in the following ranges, by mass ratio: 35% ≤ Si ≤ 78%, 7% ≤ Sn ≤ 30%, and 0% < Ti ≤ 37%, and/or 35% ≤ Si ≤ 52%,...
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WO/2013/087939A1 |
Process for manufacturing a strip made of soft magnetic alloy capable of being cut mechanically, the chemical composition of which comprises, by weight: 18% ≤ Co ≤ 55%; 0% ≤ V + W ≤ 3%; 0% ≤ Cr ≤ 3%; 0% ≤ Si ≤ 3%; 0% ≤ ...
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WO/2013/087997A1 |
The invention relates to a method for producing a strip of soft magnetic alloy which can be cut mechanically, the chemical composition of which comprises, by weight: 18% ≤ Co ≤ 55%; 0% ≤ V + W ≤ 3%; 0% ≤ Cr ≤ 3%; 0% ≤ Si â‰...
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WO/2013/080684A1 |
Provided is a surface-hardening alloy which has a good shock resistance, a good wear resistance and a good high-temperature corrosion resistance and contains Fe that can be abundantly supplied and is less expensive. An Ni-Fe-Cr-based all...
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WO/2013/077113A1 |
Provided is a Ni-Cr-based brazing material having excellent wettability/spreadability and corrosion resistance, which can be brazed at a practicable temperature (1150ËšC or lower) when used for joining a ferritic stainless steel by brazi...
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WO/2013/073423A1 |
A seamless austenite heat-resistant alloy tube of the present invention is made with a chemical composition comprising, in terms of mass percent, C: 0.03-0.15%, Si ≤ 1%, Mn ≤ 2%, P ≤ 0.03%, S ≤ 0.01%, Ni: 35-60%, Cr: 18-38%, W: 3...
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WO/2013/057452A2 |
Process for manufacturing, by mechanosynthesis, a powder of the compound Cu2ZnSnS4, the process comprising a step in which the milling of a mixture is carried out, said mixture containing: - the chemical elements Sn and S in elemental fo...
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WO/2013/057451A2 |
Process for manufacturing, by mechanosynthesis, a powder of the compound Cu2ZnSnSe4, the process comprising a step in which the milling of a mixture is carried out, said mixture containing: - the chemical elements Cu, Sn and Se in elemen...
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WO/2013/042572A1 |
Provided are: a metal material for electronic components, which has low insertion/removal resistance, low occurrence of whiskers and high durability; and a method for producing the metal material for electronic components. A metal materi...
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WO/2013/001943A1 |
Provided is Co-Cr-Pt-B alloy sputtering target characterized in that there are no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm × 100 μ area (field of view). This method for producing the Co-Cr-Pt-B alloy sputteri...
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WO/2012/176802A1 |
Provided is austenitic stainless steel having high-temperature strength and excellent nitric acid corrosion resistance. The austenitic stainless steel of this embodiment contains, by mass%, C: 0.050% or less, Si: 0.01-1.00%, Mn: 1.75-2.5...
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WO/2012/176586A1 |
Disclosed is a carburization-resistant metal material suitable as a material for cracking furnaces, reforming furnaces, heating furnaces, heat exchangers, or the like used for petroleum or gas refining or in chemical plants, the carburiz...
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WO/2012/161864A2 |
Methods of preparing nanowires having small diameters and large lengths are disclosed. Such nanowires are useful in electronics applications.
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WO/2012/160866A1 |
This negative electrode active material for electrical devices comprises an alloy containing at least 12 mass% but less than 100 mass% of Si, more than 0 mass% but not more than 45 mass% of Sn, and more than 0 mass% but not more than 43 ...
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WO/2012/059080A9 |
The invention relates to an alloy comprising (in mass %) Ni 33 - 35%, Cr 26 - 28%, Mo 6 - 7%, Cu 0.5 - 1.5%, Mn 1.0 - 4%, Si max. 0.1%, Al 0.01 - 0.3%, C max. 0.01%, N 0.1-0.25%, B 0.001 - 0.004 %, SE > 0 to 1%, and Fe remainder, includi...
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WO/2012/133166A1 |
A sputtering target for magnetic recording films which contains C, the sputtering target being characterized in that the ratio of the peak intensity of G-band to that of D-band as determined by Raman scattering spectrometry, IG/ID, is 5....
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WO/2012/121389A1 |
This material for a nuclear power device contains, in percentages by mass, 24.5 to 26.5% Cr, 22 to 40% Ni, not more than 0.04% C, 0.05 to 0.5% Si, 0.05 to 0.52% Mn, not more than 0.18% N, not more than 0.5% Ti, and 0.045 to 0.5% Al. The ...
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