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WO/2012/060424 |
Provided are: a gas-barrier laminate film which can be produced with good productivity, has high transparency and high gas barrier properties, has excellent interlayer adhesion strength among constituent layers thereof, and cannot be cur...
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WO/2012/059679 |
Pumping installation for obtaining a high vacuum and pumping method using such an installation. Specifically, the invention relates to a pumping installation comprising: a chamber (5), first and second vacuum pumps (PAV1, PAV2), and a di...
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WO/2012/059692 |
The novel process for forming metal coatings of the present invention relates to a process for depositing a thin metal coating that has a low average roughness and adheres well to a silica-based substrate.
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WO/2012/059439 |
The invention relates to a method for continuously coating at least one substrate (14) with a semiconductor material, for example CdTe. To this end, a semiconductor material is sublimated in at least one crucible (30) in order to deposit...
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WO/2012/055086 |
Disclosed is a method for preparing a metal nanoparticle array with micro number density or dimension gradient, which comprises: (a) sticking a mask on a substrate coated with a polymer film or an amorphous carbon film, and fixing the su...
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WO/2012/057000 |
The present invention provides a first hard film coated member wherein: layers A having a composition that satisfies TiaCrbAlcSidYe(BuCvNw) (wherein a, b, c, d, e, u, v and w respectively represent specific atomic ratios) and layers B ha...
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WO/2012/056877 |
A film (90) is formed by depositing vapor deposition particles (91) to a substrate (10), said particles having been discharged from vapor deposition source openings (61) of a vapor deposition source (60), by having the particles sequenti...
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WO/2012/057106 |
Provided is a sputtering target/backing plate assembly, characterized in that a Cu-Cr alloy backing plate is joined to a Ti target via a layer formed from a strain-absorbing material at the interface between the Ti target and the Cu-Cr a...
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WO/2012/057317 |
A raw material supplying device (1) is configured from: a storage tank (30) capable of holding a powdery raw material (28) inside; a bowl feeder (40) into which the powdery raw material (28) ejected from the storage tank (30) is supplied...
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WO/2012/055989 |
The invention relates to a method for producing a connection between two ceramic parts, having the following steps: providing a first ceramic part and a second ceramic part; providing an active brazing material on at least one surface se...
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WO/2012/057087 |
Provided is a soft magnetic alloy for a heat-assisted magnetic recording medium having superior saturation magnetic flux density, non-crystallization properties, crystallization temperature, and corrosion resistance. A sputtering target ...
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WO/2012/057057 |
Provided is a titanium target for sputtering, characterized in that the titanium target for sputtering has a Shore hardness of at least Hs 20 or greater and a fundamental basal plane orientation percentage of no more than 70%. The sputte...
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WO/2012/055485 |
The invention relates to a coating comprising at least one molybdenum-containing layer having molybdenum oxide, said molybdenum being essentially molybdenum monoxide. The invention further relates to a PVD process for producing the discl...
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WO/2012/057108 |
Provided is a process for forming a metal oxide film having ohmic contact with a p-type semiconductor layer and containing In with high light transmittance and low electric resistivity by a sputtering method. While a surface to be sputte...
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WO/2012/053402 |
A vapor deposition device (50) has partitioning walls (26) vertically arranged within a film-forming region on a substrate (200) to be formed with a film. The vapor deposition device (50) is provided with: a mask unit (80) equipped with ...
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WO/2012/053430 |
A technique is provided which is able to reduce waste of evaporated material due to standby time during deposition. In this deposition apparatus (1), a substrate loading and unloading region (6), a deposition region (7), and a standby re...
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WO/2012/054467 |
A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.
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WO/2012/052437 |
Target for the deposition of solid solution layers comprising at least two different metals on a substrate by means of arc physical vapour deposition (arc PVD), wherein the target comprises at least two different metals. In order to prod...
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WO/2012/054306 |
A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF g...
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WO/2012/053174 |
A magnetron sputtering device is provided with: a target section positioned in such a manner as to face a substrate held by a substrate-holding section; a power source that supplies power to the target section; a magnet section that reci...
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WO/2012/052182 |
The invention relates to a device (1) for coating a surface (21) of a substrate (20). The device comprises a processing chamber (2) with a particle source (3) for producing coating particles (19), which are also deposited on the inner wa...
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WO/2012/052428 |
The invention relates to a process for depositing under vacuum a multilayers coating stack on a flat glass substrate and to a modular coater for the deposit of thin layers on a flat glass substrate. A gas separation zone disposed between...
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WO/2012/051799 |
A gate dielectric material Hf1-xSixOy of a high dielectric constant has a cubic crystalline phase or quadrangular crystalline phase, the dielectric constant is 18 to 34, and x ranges from 0.02 to 0.1. Further provided is a method for pre...
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WO/2012/053532 |
Provided are an apparatus for organic film formation and a method for organic film formation, according to which an organic material is adhered to a film-formation target, and the organic material is then hardened to form an organic film...
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WO/2012/051980 |
The invention involved the development of a sputtering head with a receiving area for a sputtering target (target receiving area). The sputtering head has one or more magnetic field sources for generating a stray magnetic field. Accordin...
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WO/2012/053171 |
Provided is a vacuum film-forming apparatus, which has a vacuum processing chamber and auxiliary vacuum chambers separately configured to be convenient for transport and the like, and which is easily assembled at an installation site, an...
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WO/2012/054308 |
A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process si...
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WO/2012/052073 |
The invention relates to a method for producing a firm bond between a polymer substrate and an inorganic layer, wherein the substrate surface is exposed to a precursor before the deposition of the inorganic layer which is to be produced ...
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WO/2012/049420 |
The invention relates to an item comprising a substrate coated with a mesoporous coating and a coating acting as a barrier to the sebum, having a maximum thickness of 20 nm, directly deposited on the mesoporous coating, and comprising at...
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WO/2012/050081 |
The present invention addresses the problem of providing a manufacturing device that is capable of continuously producing organic EL elements even when an abnormality occurs in a transfer chamber. The manufacturing device has multiple fi...
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WO/2012/048692 |
One example of the invention relates to an indexable insert comprising a base that has flanks and at least one face. According to one example of the invention, primarily the face(s) of the indexable insert, but not the flanks thereof, ar...
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WO/2012/050597 |
Certain example embodiments of this invention relate to methods of treating the surface of a soda lime silica glass substrate, e.g., a soda lime silica alkali ion glass substrate, and the resulting surface-treated glass articles. More pa...
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WO/2012/050160 |
The present invention provides a transparent conductive film containing a base material layer, a gas barrier layer, and a transparent conductor layer, wherein the gas barrier layer is constituted of a material containing at least oxygen ...
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WO/2012/048460 |
A low resistivity high thermal-stability copper-nickel-molybdenum alloy film comprises Ni as a solid-solution element and Mo as a diffusion-barrier element, wherein the atomic ratio of Mo and Ni is 0.06-0.20 or the weight ratio of Mo and...
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WO/2012/050117 |
Disclosed is a supporting body which is used in a semiconductor device manufacturing process and has an upper surface that is provided with a recessed portion in which a wafer is disposed. The supporting body is formed of silicon carbide...
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WO/2012/046795 |
The present invention addresses the problem of providing a vapor deposition device which is suited to the manufacture of an organic EL device, and which can grow film on a large number of base materials per unit time. A vacuum vapor depo...
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WO/2012/046672 |
A deposition apparatus capable of suppressing pressure increase and temperature increase within a vapor generation unit and precisely controlling the temperature. A deposition apparatus for performing deposition treatment on a glass subs...
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WO/2012/046768 |
Provided is an Al-based alloy sputtering target capable of increasing the deposition rate (sputter rate) when using a sputtering target, and preferably capable of preventing the occurrence of splashes. The Al-based alloy sputtering targe...
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WO/2012/047882 |
An ion beam system (100) includes a grid assembly (300) having a substantially elliptical pattern of holes to steer an ion beam (108) comprising a plurality of beamlets to generate an ion beam (108), wherein the ion current density profi...
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WO/2012/046474 |
A thin-film formation method is provided with which it is possible to avoid the waste of film deposition due to trial film deposition and to improve the efficiency of film deposition. This method is for subjecting a target (29a, 29b) to ...
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WO/2012/046384 |
Provided is a vacuum treatment apparatus having a small size, high productivity and low cost. A long sheet-like base material (S) is transferred through a vacuum treatment chamber (1), and predetermined treatment is performed to the shee...
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WO/2012/046706 |
Provided is a method for producing a dielectric thin film that can form a PZT thin film having a (100)/(001) orientation. PbO gas is caused to adhere to the surface of a substrate, forming a seed layer, and then while heating the substra...
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WO/2012/047249 |
Certain example embodiments relate to a layer of or including Ti1-xSixOy and/or a method of making the same. In certain example embodiments, the Ti1-xSixOy -based layer may be substoichiometric with respect to oxygen. In certain example ...
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WO/2012/046808 |
The method for producing an anodized film of the present invention includes a step (a) a for preparing a laminated structure (10) that comprises a substrate (12), a sacrificial layer (16) containing aluminum formed on the substrate (12),...
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WO/2012/047982 |
Non-elliptical ion beams (508) and plumes (510) of sputtered material can yield a relatively uniform wear pattern on a destination target (504) and a uniform deposition of sputtered material on a substrate assembly (506). The non-ellipti...
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WO/2012/047914 |
A grid assembly (114, 300) coupled to a discharge chamber of an ion beam source (102) is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly 1...
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WO/2012/046705 |
Provided is a dielectric film formation device and a dielectric film formation method that are able to form a dielectric film having a (100)/(001) orientation. The dielectric film formation device (10) has an adhesion-prevention-plate he...
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WO/2012/041920 |
The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one...
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WO/2012/043571 |
Provided are: a sintered complex oxide (2) consisting primarily of zinc, aluminum, titanium, and oxygen; and a manufacturing method therefor. The atomic ratios of the elements constituting said sintered complex oxide satisfy relations (1...
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WO/2012/043478 |
Provided is a film forming method which generates metal ions from a metal target with plasma in a processing container and draws the metal ions in with a bias, depositing a metal thin film on a body to be processed wherein trenches are f...
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