Document |
Document Title |
WO/2003/025255A2 |
The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper (40), that preferential...
|
WO2002070144A9 |
An improved method and plating system (100) comprising a plurality of non-electrically conductive shields (130) forming an elongated upper channel (122) and an elongated lower channel (121); a plating solution sparger comprising a series...
|
WO/2003/018874A2 |
A processing chamber comprising a reaction vessel having an electro−reaction cell (420) including a virtual electrode (430) unit, an electrode assembly (414) disposed relative to the electro−reaction cell to be in fluid communication...
|
WO/2003/018878A2 |
In order to even out the electrolytic treatment of workpieces 9 made of electrically non-conductive material and having a very thin base metallising 6, 8, a device is employed in a manner according to the invention comprising means for b...
|
WO/2003/018879A1 |
An electroforming apparatus and an electroforming method for performing a highly precise electroforming. An electrolyte (3) is continuously fed from a control bath (5) to an electroforming bath (1) housed in an outer bath (2), so that th...
|
WO/2003/010359A1 |
Fluid flow processing equipment, wherein plating solution (17) at the portion other than near a fluid level is prevented from flowing by a first partition plate (15) having a lower end fitted to the bottom part of a plating bath (11) and...
|
WO/2003/010366A1 |
An apparatus for plating treatment, characterized in that at least a part of the portion contacting with a plating solution is made from a material which exhibits a lower rate of the change in surface roughness during the contact with a ...
|
WO/2003/006193A1 |
The invention relates to a continuous casting roll for casting molten baths, especially steel molten baths. Said casting roll comprises a roll barrel (2) consisting of a metallic material, to which a layer (4) of metallic material is app...
|
WO/2003/005430A2 |
A method for a controlling a plating process layer (160) on a wafer in accordance with a recipe; measuring a thickness of the process layer (160); and determining at least one plating parameter of the recipe for subsequently formed proce...
|
WO/2003/002784A2 |
It is described an electrolysis cell wherein the anodic dissolution of metals is carried out, in particular of metals characterised by a relatively high oxidation potential, such as coppere, or metals with high hydrogen overpotential, fo...
|
WO/2003/000395A1 |
An insulated vibratingly stirring apparatus (16), comprising a vibration generating means having a vibrating motor (16d) and a vibrating member (16c) fitted to the motor, a vibrating bar fitted to the vibrating member through a mounting ...
|
WO/2002/097165A2 |
An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel (204). The reaction vessel includes: an outer container (220) having an outer wall (222); a fist outlet configured to introduce a p...
|
WO/2002/096807A2 |
An electrodeionization apparatus and method for purifying a fluid. A fluid, such as water, can be purified by removing weakly ionizable species from the fluid. Weakly ionizable species may be dissociated at different pH levels to facilit...
|
WO/2002/083995A1 |
A novel method and apparatus of wet processing workpieces, such as electroplating semiconductor wafers and the like, that incorporates reciprocating processing fluid agitation to control fluid flow at the workpiece, and where electric fi...
|
WO/2002/084212A1 |
The inventive method for measuring micro-galvanically produced components (23') comprising a three-dimensional structure produced by deep lithography is characterised as follows: a single or multilayer component (23') is constructed by g...
|
WO/2002/077328A1 |
A phosphate film processing device for forming a phosphate film on a metal blank by electrolyzing the metal blank in a predetermined electrolytic solution, wherein one of the positive and negative electrodes abuts against the metal blank...
|
WO/2002/072924A2 |
The invention relates a device for chroming, whereby various electrodes are used as operating anodes for separating chrome and for oxidising formed chrome III-ions into chrome VI-ions, and an electrode is used as an oxidation anode which...
|
WO2002045476A9 |
A process and reactor for electrochemical processing of at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positio...
|
WO/2002/063069A2 |
Methods of electrodeposition and electroless deposition are disclosed which afford super-filling of high-aspect ratio features on wafers by exposing wafers and electrolytic solutions in which they are immersed to conditions effective to ...
|
WO/2002/063072A1 |
An apparatus (100) which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate (108) is provided. The apparatus has an anode (112) which can be contacted...
|
WO/2002/062446A1 |
A process for removing oxygen from a copper plating solution is provided. The solution is passed through a degasser comprising a shell and hollow hydrophobic fiber porous membranes wherein the shell while a vacuum is drawn on the surface...
|
WO/2002/059398A2 |
The present invention relates to a plating apparatus and method which smoothly perform contact of a plating liquid with a surface of the substrate and which can prevent air bubbles from remaining on the surface to be plated. The plating ...
|
WO/2002/057514A2 |
A system for depositing materials on a surface of a wafer includes an anode, a shaping plate, a liquid electrolyte contained between the anode and the surface of the wafer, and electrical contact members contacting selected locations on ...
|
WO/2002/053809A1 |
A spouted bed electrochemical reator (100) for treating a plurality of objects (114) with a fluid is set forth. The apparatus comprises a vessel (119) for contacting the plurality of objects (114). An upwardly directed stream of fluid an...
|
WO/2002/053806A2 |
The invention relates to a device and method, with which it is possible to electrochemically deposit thin layers with a nearly homogeneous layer thickness on large-surface substrates having relatively high resistances. These thin layers ...
|
WO/2002/038827A1 |
A method for depositing a film of an advanced material on a surface of an article is disclosed. The method comprises placing the article within a bath having a pair of spaced electrodes one of which is formed by said article and an elect...
|
WO/2002/036839A1 |
The invention concerns a method or procedure and an installation of metal retrieving from used water chroming solutions, with high content of Cr and other impurifying metals as Fe, Cr?3+¿, Cu, using as reactive the gas ammonia, introduc...
|
WO/2002/036860A1 |
A process is provided for electrolytically depositing copper onto a workpiece. The process includes the steps of providing a copper generation vessel and generating a copper plating solution from solid-state copper in the vessel. The pla...
|
WO/2002/033150A2 |
The present invention discloses a power supply device, particularly for supplying a controlled electrical signal in an electrochemical process, e.g. plating, etching, etc. The power delivery device provides an electrical signal with opti...
|
WO/2002/031227A2 |
A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate i...
|
WO/2002/029875A2 |
The present invention provides an electroplating system (50) for semiconductor wafers (66) including a plating chamber (52) connected by a circulating system (52, 56, 58) to a plating solution reservoir (60). The semiconductor wafer (66)...
|
WO/2002/026381A2 |
Ionic compounds having a freezing point of no more than 50 °C, formed by the reaction of at least one amine salt of the formula R?1¿R?2¿R?3¿R?4¿N?+¿X?-¿ (I) with at least one hydrated salts, which is a chloride, nitrate, sulphate ...
|
WO/2002/004711A2 |
An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in...
|
WO/2002/004715A2 |
A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate i...
|
WO/2002/001610A2 |
A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electro-chemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be...
|
WO2000061837A9 |
A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microeletronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (50...
|
WO/2001/096632A2 |
An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a...
|
WO/2001/096973A2 |
Methods, systems and computer program products for controlling plating pulse rectifiers are provided by identifying one of the plurality of plating pulse rectifiers as a master plating pulse rectifier and identifying at least one of the ...
|
WO/2001/094656A2 |
A programmable/controllable anode and related methods of operation. An anode to be used with an electroplating system containing a substrate (48) acting as a cathode. The anode includes a plurality of anode segments (203a, ..., 203d) and...
|
WO/2001/092607A1 |
The present invention provides a system and method for selectively removing one or more organic and also preferably one or more inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a sou...
|
WO/2001/092604A2 |
The invention is relative to an electrolysis cell for the anodic dissolution of metals, in particular of metals characterised by a relatively high oxidation potential, such as copper, or metals with high hydrogen overpotential, having th...
|
WO/2001/091163A2 |
The facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber. The optimizer (step 70) utilizes two sets of input parameters along with the sensitivity table/matrix to ca...
|
WO/2001/090434A2 |
A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerica...
|
WO/2001/088228A1 |
An electrolysis apparatus equipped with a circulating system, wherein an adjusted copper sulfate solution containing thiourea added thereto is electrolyzed in an electrolysis vessel to produce an electrolytic copper foil, a copper sulfat...
|
WO/2001/088211A2 |
The invention relates to a method for the treatment of work pieces with a palladium colloid solution by bringing the work pieces into contact with the colloid solution, palladium being recovered after the use of the colloid solution. Thi...
|
WO/2001/083857A1 |
Method for the elctrolytic coating of a metal strip, in which the strip forms a cathode and is moved in its longitudinal direction relative to an anode, an electrolyte flowing at least between the strip and the anode, characterized in th...
|
WO/2001/081657A2 |
A rotation element (9,10), especially a contact cylinder is used to electrically contact printed circuit boards and conductor films in order to produce printed circuit boards and conductor films (7) wherein there is only a low amount of ...
|
WO/2001/079589A1 |
In a method for processing a substrate (S), for instance by etching or plating, use is made of an apparatus comprising a chamber (1) for receiving the substrate (S), a unit (10) for feeding a processing fluid to the chamber (1) before an...
|
WO/2001/079591A1 |
In a method for electrochemical processing of a substrate (S), use is made of an apparatus which comprises a container (1) having a chamber for holding an electrolyte, an electrode member (8) arranged in the chamber, and a substrate hold...
|
WO/2001/071066A1 |
Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device whi...
|