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Patent Searching and Data


Matches 401 - 450 out of 4,955

Document Document Title
JP6473587B2  
JP6473455B2  
JP6452182B2  
JP2018204820A
To provide a graphite crucible used for refining a non-ferrous molten metal in which oxidative consumption caused by direct fire heating is prevented.The outer fence of a graphite crucible body is covered with a metal plate having heat r...  
JP2018203575A
To provide a crystal growth apparatus and a crystal growth method using the same such that a single-crystal growth apparatus employing a Czochralski method can efficiently and easily prevent raw material solidification at a crucible bott...  
JPWO2017146139A1
There is a subject of the present invention in providing a molybdenum crucible of structure where it is [intensity reservation of prevention of a leak and a crucible of Melt ] compatible. Molybdenum crucible 100 of the present invention ...  
JP6438007B2  
JP2018193277A
To provide a crystal growth apparatus low in cost, having a high nondefective rate and capable of corresponding to a long-sized crystal to be grown.The crystal growth apparatus comprises: a metal crucible capable of holding a raw materia...  
JP2018189246A
To provide a cold crucible melting furnace having a hearth provided with magnetic flux induction mechanisms securely melting a solidified skull to realize stable tapping, further, to save power regarding the tapping, and simultaneously, ...  
JP2018188338A
To suppress reduction of oxygen concentration at a periphery of a silicon single crystal and thus to enhance uniformity of in-plane distribution of oxygen concentration in a production method of the silicon single crystal by a HMCZ proce...  
JP6431267B2  
JP2018177542A
To provide a production method of an oxide single crystal capable of suppressing generation of a void.In a production method of an oxide single crystal for rearing a single crystal of oxide from a melt of an oxide raw material in a cruci...  
JP2018177572A
To provide a crystal growth apparatus capable of efficiently preventing the raw material of a crucible bottom from being solidified accompanying a long size of a crystal body to be grown in an apparatus for growing a single crystal by th...  
JP2018168051A
To provide a manufacturing apparatus capable of manufacturing a high quality SiC single crystal ingot having less defect in a large-diameter single crystal growth by suppressing degradation of a heat insulator during a crystal growth, an...  
JP2018168023A
To provide a method for manufacturing a silicon carbide single crystal ingot suitable for manufacturing, with good reproducibility, the silicon carbide ingot, or especially not limited to, a silicon carbide single crystal ingot which has...  
JP2018168010A
To provide an SiC single-crystal manufacturing device that facilitates reuse even if SiC is recrystallized at a bottom part.A silicon carbide single-crystal manufacturing device comprises: a crucible 1 having a container body 1a and a li...  
JP2018530500A
It is a device for pulling out a crystal sheet from Melt . It is a crucible which the device is constituted so that the Melt may be included, and has dam structure, and the Melt may also contain a crucible provided with an exposure side ...  
JP2018529607A
It is usable in a continuation Basalt casting process of manufacturing a Basalt article like a fusion Basalt process and textiles, and a filament which manufacture a Basalt article containing a casting Basalt article, Induction heating, ...  
JP6403693B2  
JP2018156750A
To provide a heating element module in which deterioration of a heating element and a refractory hardly proceed.A lower heating element module 3 according to an embodiment of the present invention includes a heating element 3b formed of ...  
JP6397834B2  
JP2018145071A
To provide a crystal growth apparatus capable of preventing efficiently raw material solidification on a crucible bottom part caused by lengthening of a crystalline to be grown, concerning a single crystal growth apparatus by a Czochrals...  
JP2018135228A
To provide a method for growing a LiTaOsingle crystal, using a LiTaOcrystal raw material (melting point of 1650°C) having a congruent composition and a platinum crucible (melting point of 1760°C), having melting points close to each ot...  
JP2018131363A
To provide a glass product manufacturing device capable of recovering an impurity contained in molten glass.A glass product manufacturing device 100 comprises: a feeding port 10 where a glass material is fed therethrough; a glass fusing ...  
JP6372079B2  
JP6374333B2  
JP6373443B2  
JP2018118885A
To provide a single crystal pulling apparatus using the Czochralski method, capable of maintaining the advantage of extracting a crystal from a water cooling type chamber divided in the vertical direction and enhancing workability and sa...  
JP6365700B2  
JP6363992B2  
JP2018111633A
To provide an apparatus for growing an oxide single crystal, capable of corresponding to low cost, and a large diameter and long size of the oxide single crystal.An apparatus 100 for growing an oxide single crystal comprises: a heat insu...  
JPWO2018003386A1
[TECHNICAL PROBLEM] It is the large-sized single crystal which lost a crystal grain community, and also composition should manufacture a quality single crystal which is homogeneous and has few negative crystals and exsolution lamellae wi...  
JP2018104208A
To provide a method for manufacturing a silicon single crystal, capable of manufacturing the silicon single crystal while reducing the evaporation of dopant.A method for manufacturing a silicon single crystal comprises: arranging an evap...  
JP6353854B2  
JP2018100202A
To provide a method for growing a high quality LiNbOsingle crystal without controlling the shape of the single crystal using an iridium crucible.The method for growing a LiNbOsingle crystal comprises: charging a LiNbOseed crystal 7 into ...  
JP2018098153A
To provide an induction melting furnace capable of achieving exact management of a retention temperature even when the amount of molten metal varies at every tapping.A controller 100 heats and melts a heated material Y stored in a meltin...  
JP2018095511A
To provide a hot zone structure capable of maintaining for a long term, a temperature environment suitable for rearing an oxide single crystal by improving a life time of a refractory used at a rearing time of the oxide single crystal.A ...  
JP2018515686A
The material which should be refined is arranged in the crucible located in refining chambers. ; thermal energy is supplied to material, Material is maintained to a molten state. : Supply refining gas into fusion material, Material is re...  
JP2018090432A
To provide a recharge tube capable of reducing contamination in raw material melt derived from a wire metal without damaging flexibility of a wire in recharging, and to provide a production method of a silicon single crystal.A raw materi...  
JP2018087098A
To provide an apparatus for manufacturing a silicon carbide single crystal, capable of improving temperature uniformity in the circumferential direction.The apparatus for manufacturing a silicon carbide single crystal includes: a furnace...  
JP2018084350A
To provide a molten metal holding device capable of preventing the sticking solidification of a molten substance to the inner wall of a crucible caused by molten metal scattering, also easy in the exchange of a heater, and reduced in the...  
JP6334526B2  
JP2018080097A
To facilitate control in seeding of seed crystals, and control in crystal growth, which are problems of VB method, thereby preventing troubles such as polycrystallization, to improve the yield.A single crystal production device has a cru...  
JP2018080098A
To provide a single crystal production device and a single crystal production method, whereby: in the growth of homogeneous single crystals from a melt composition other than a harmonious composition in which the compositions of solid an...  
JP2018070392A
To provide a silicon single crystal pulling apparatus capable of preventing an inside of an exhaust gas pipe extension member from being blocked with a large amount of oxides.There is provided a silicon single crystal pulling apparatus p...  
JP2018070393A
To provide a single crystal growing apparatus capable of enhancing production efficiency.(1) A single crystal growing apparatus 102 includes a plurality of crucibles 10 to be rotated and revolved and heating means 20 surrounding the plur...  
JP2018069279A
To provide a graphite crucible capable of efficiently melting-holding the raw material of a casting in casting, and a melting-holding furnace using the same.Provided is a graphite crucible comprising: a crucible furnace melting the raw m...  
JP6316763B2  
JP2018510831A
A device for physical gaseous phase transportation growth of a semiconductor crystal is provided with the following. Cylindrical vacuum enclosure which demarcates an axis of symmetry, A reaction cell base material for supporting a reacti...  
JP2018062454A
To provide a graphitic heat transfer vessel having a thermal conductivity higher than heretofore.In a manufacturing method of a graphite crucible as one of the graphitic heat transfer vessel according to the present invention, pellet-lik...  

Matches 401 - 450 out of 4,955