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JP2007047080 |
To provide a scanning electron microscope (SEM) capable of shortening a time for length measuring inspection at a deficiency analysis time by a manual work or the like, and its image display method.This SEM 1 is equipped with a CAD image...
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JP2007047077 |
To locate a measurement position in piping to be measured for improving precision when measuring reduction in thickness in a method of measuring piping thickness by using an image intensifier.There are provided: a radiation generating de...
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JP3916100 |
To provide a film thickness measuring method by which the film thickness of the very small part of a coating film which covers a molded plastic product having a sharp knife edge or recessing and projecting sections of several to several ...
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JP2007040910 |
To enhance efficiency for reviewing a defect to review the large number of defects in a short time, in the defect review for a semiconductor device capable of detecting the defect in a low magnification of SEM (Scanning Electron Microsco...
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JP2007042799 |
To achieve a vacuum carrier of simple structure for exchanging operation of a sample in a short time, and to provide a charged particle ray inspection device of less footprint and improved throughput.A vacuum carrier 26 comprises an arm ...
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JP3914925 |
To measure the thickness of a thin film by an X-ray diffraction method by performing the parameter fitting of a theoretical rocking curve of diffracted X-ray intensity considering orientation to a measured rocking curve, even when film t...
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JP3913555 |
To accurately measure the film thickness of a thin film formed on a substrate. A film thickness measuring device 18 is used to measure a first and a second substrate current value generated in a substrate 32 when a thin film 34 formed on...
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JP2007035645 |
To improve contrast of a picked-up image by uniformalizing a potential distribution on a surface of an inspection object.The imaging device irradiates an electron beam emitted from an electron gun on an object, detects electrons emitted ...
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JP2007033149 |
To easily and accurately measure the film thickness of thin oxide films formed on substrates by secondary ion mass spectroscopy.A maximum value of the detection strength of secondary ions radiated by irradiating primary ions to an oxide ...
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JP2007024896 |
To provide a improved method for measuring a three-dimensional surface roughness of a structure.A converging ion beam is used for milling successive cross sections or slices of an object feature at an interval previously selected over a ...
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JP3907943 |
To provide a method for inspecting defects to allow inspecting the defects of a sample in high throughput and durability. The method for inspecting the defects comprises: a step for giving a charge to the predetermined region of the samp...
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JP2007019523 |
To perform evaluation and abnormality detection of a fine pattern formed on a semiconductor wafer and an aligner which exposed that pattern.Edge detection is performed for a fine pattern exposed by a stepper and the profile of each indiv...
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JP2007019522 |
To perform evaluation and abnormality detection of a fine pattern formed on a semiconductor wafer and an aligner which exposed that pattern.Edge detection is performed for a fine pattern exposed by a stepper and the profile of each indiv...
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JP2007010470 |
To solve the problem wherein too large a ratio of ineffective radiation dose also makes the statistical noise too large (statistical noise is proportional to the ratio of ineffective doses) for executing normal measurement of the wall th...
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JP2007010471 |
To solve the problem, wherein too large a statistical noise makes the measurement of wall thickness of the steel pipe impossible due to large ineffective radiation dose (statistical noise is proportional to the ratio ineffective radiatio...
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JP3902017 |
To provide an apparatus and a method for measuring a solder height for easily and accurately measuring the solder height of a connected part of a mounting component which cannot be visually confirmed in a mounting board constituted of th...
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JP2007003535 |
To correctly measure a size of a pattern which shrinks by irradiation of an electron beam by suppressing the shrink in measuring the pattern.Based on combinations of magnifications stored in a memory device which stores a plurality of co...
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JP2007003212 |
To provide a formation device of an imaging recipe and its method capable of optimizing by teaching, a selection rule for forming automatically the imaging recipe, in a SEM device or the like.This formation device for forming the imaging...
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JP2007005818 |
To provide a pattern matching method and apparatus thereof that is operator-free and fully automatic, and can realize a high throughput.The pattern matching method and apparatus for carrying out pattern matching between design data and t...
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JP2007003310 |
To provide an inspection device capable of continuously inspecting an electrophtographic photosensor by an EPMA method without destructing and processing the electrophtographic photosensor, and also to provide an inspection method.The in...
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JP2007003539 |
To improve efficiency of condition setting, to shorten inspection time, and to improve reliability of an inspection, in a circuit pattern inspection device for inspecting, with an electron beam, a defect, foreign substance, residue, or t...
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JP2007005634 |
To provide a charged beam writing method capable of improving a beam dimensional accuracy during an electron beam writing and consequently improving a resist pattern dimensional accuracy.The method includes the steps of conducting a beam...
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JP3897245 |
To provide a distance measuring device of gamma source using a multi-layer radiation detector capable of highly accurately measuring direction of existing radiation source or a distance to radiation source. Radiation introduced to a plur...
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JP3896996 |
To provide a circuit-pattern inspecting apparatus and method having a good practical usability, by improving the cross-section function of the visual inspection apparatus of a wafer. The circuit-pattern inspecting apparatus has a project...
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JP2006351303 |
To solve the problem of an electron beam inspection apparatus using mirror electron image formation, wherein a conventional combination of a charged control electrode and an irradiation beam for generating secondary electrons causes nonu...
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JP2006351746 |
To provide an imaging recipe generating apparatus and a method thereof in an SEM and the like having reduced a generation period by automatic generation of an imaging recipe for evaluating pattern shape through analysis using a CAD image...
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JP3893539 |
To accurately measure the sectional shape or three-dimensional shape of a sample without using any matching of feature points. The signal strength of electron beams is detected by an electron detector 3 when the sample 7 is illuminated w...
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JP3894534 |
To provide a radiation imaging unit for obtaining correct image data only by simple processing. The radiation imaging unit is provided with a radiation generator 1 and a radiation sensor for converting the radiation into an electric sign...
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JP3895474 |
To obtain the image pickup system which has high resolution and is low in power consumption by using detectors consisting of bolometers with antennas which can be simultaneously prepared in many numbers on the substrate of the detectors....
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JP3896334 |
To provide a determining method and its device suitable to determine whether it is projecting or recessed on a pattern comprising lines and spaces formed on a specimen. According to this method and its device, when one foot portion posse...
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JP2006337178 |
To provide a device for detecting moved distance, using radiation capable of measuring the distance moved at all times with high degree of accuracy, even if there are unevenness and distortions in the sensitivity of radiation detectors, ...
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JP2006337203 |
To improve positioning precision by eliminating the restraint that the position of a mark for positioning is limited in the electric current path.A sample and a laser beam are relatively moved and the sample is scanned, and magnetism fro...
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JP2006338881 |
To provide a technology of enabling to control charge of a testpiece in an electron microscope application device and a testpiece inspecting method.This has a structure in which a charge control electrode 4 to emit photoelectrons 2 is ar...
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JP2006337360 |
To provide a method and an apparatus for attaching a mark to a test piece and measuring the deformation property of the test piece to decide the deformation property of the test piece by including the measurement of the macro or micro de...
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JP3890112 |
To provide a high performance air path gap sensor. A machine having a projecting material, a mutually movable adjacent seal 18 susceptible to abrasion, an air path gap 18 between the seal 18 and the material 26, and a material interval D...
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JP3889851 |
To obtain a measuring method in which the measuring range of the film thickness of an unknown sample is expanded while a measuring accuracy is being maintained by a method wherein, by using an X-ray reflectance method and a fluorescent X...
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JP2006329928 |
To provide a thin-film transistor (TFT) array inspection device which can obtain results of fault isolation on all TFT array substrates and those TFT array substrates including many defects in a short time.This is the TFT array substrate...
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JP2006332038 |
To achieve high-yield detection by aligning secondary electrons with the center axis of a detection system and avoiding loss resulting from a hole of the detection system for the purpose of reviewing and classifying shallow unevenness an...
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JP2006332069 |
To provide a judgement method and a device suitable for judgement of roughness of a line and a space pattern formed on a test piece.Charged particle beams are made to incline, or a test-piece stage is made to incline, so that the charged...
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JP3886871 |
To realize a detecting unit improved in resolution and in check throughput, which irradiates a sample with a radiation beam, detects a secondary radiation emitted from the sample, and detects the image of the surface of the sample. This ...
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JP3887588 |
To provide a stress measuring method more accurate than a conventional sin2 Ψ method for a tetragonal-system, polycrystal and c-axis-oriented sample. An X-ray optical system is set at the location of ψ=0°. X-rays 14 incident onto the ...
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JP2006324631 |
To provide an overlay vernier which can exactly line a pattern within a real cell up by preventing a phenomenon in which information regarding lining the overlay vernier up does not coincide with information concerning lining the pattern...
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JP2006324682 |
To obtain cross section shape pattern information useful for determining etching process conditions using in-line SEM images to be observed by non-destructive manner.Three-dimensional shape information of a pattern corresponding to etchi...
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JP3883267 |
To accurately analyze the structure of a metal multilayered film within a short time. The sensitivity coefficient to a membrane of a fluorescent X-ray measuring apparatus is determined by measuring the X-ray reflectivity and fluorescent ...
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JP2006319351 |
To provide a pattern edge shape inspection method and a pattern inspection device which quantitatively analyze, by the nondestructive inspection, line edge shapes of a micropattern featuring materials, processes and exposure optical syst...
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JP2006318955 |
To provide a method and an apparatus for measuring pattern dimensions for precisely measuring the pattern dimensions required for ensuring the performance of a transistor.The method includes: a step S1 for allowing a pattern measurement ...
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JP2006318831 |
To provide an electron beam calibration technique to perform deviation calibration with high precision used in an electron beam device.A one-dimensional diffraction grating is positioned such that the direction of the grating is horizont...
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JP3884820 |
To locate a microobject in a periodically arranged array precisely and inexpensively by generating pulses corresponding in number to the submicron objects contained in the array and scanning the object and then counting the pulses. A pul...
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JP2006318774 |
To provide a scanning charged particle microscope equipped with an aberration correction device easily adjustable, having deep focal depth.An aperture with a plurality of openings is used to determine correction condition of aberration f...
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JP3880312 |
To provide a reference system which enables reference repeatable with a precision of mobile object, preferably, a submicrometer regarding to a reference frame. The position detector comprises a radiation source mounted on an isolated ref...
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