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WO/2021/034495A1 |
For lithography mask layout verification, training data is collected for each design intent in a set of design intents by identifying a set of failures that is expected to occur when the design intent is manufactured, and recording a fai...
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WO/2021/030302A1 |
An actuator for an optic mount in a vacuum environment includes a bellows around an actuator compartment. The bellows provides a seal around the actuator. A filter assembly is positioned between the actuator compartment and an interior o...
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WO/2021/028296A1 |
A code mark for a reticle such as a reticle in which the individual elements of the mark comprise diffraction gratings so that the apparent brightness of the elements depends on whether light from the element is diffracted into or outsid...
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WO/2021/028228A1 |
Described herein is a method for training a machine learning model configured to predict values of a physical characteristic associated with a substrate for use in adjusting a patterning process. The method involves obtaining a reference...
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WO/2021/026056A1 |
An extreme ultraviolet reflective element comprising a multilayer stack of absorber layers on a multilayer stack of reflective layers. The element comprises spacing layer and phase tuning layer. Methods of manufacturing extreme ultraviol...
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WO/2021/022602A1 |
Disclosed are a gray-tone mask and a method for manufacturing a display substrate. The gray-tone mask comprises a light-transmitting area (31) and a light-shielding area (32) surrounding the light-transmitting area (31), wherein the ligh...
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WO/2021/016947A1 |
A display substrate (101) and a display device. The display substrate (101) comprises a plurality of sub-pixel groups (110) and a plurality of signal line groups (120). The plurality of signal line groups (120) are arranged at intervals ...
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WO/2021/018379A1 |
A method for collimating a beam of material being deposited on a substrate at a deposition area of the substrate is disclosed. The substrate is masked with a stencil mask located at a mask distance from the substrate, the mask distance b...
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WO/2021/018777A1 |
A method of manufacturing a pellicle membrane, the method comprising: providing a first sacrificial layer on a planar substrate to form a stack; and providing, to at least a portion of the stack, at least one metal silicide or doped meta...
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WO/2021/013519A1 |
Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least ...
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WO/2021/012311A1 |
Provided is a photomask, comprising: a main pattern region comprising a first subcircuit pattern positioned at one end thereof and a second subcircuit pattern positioned at the other end thereof; a first virtual circuit pattern adjacent ...
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WO/2021/011737A1 |
A system generates a mask for a circuit design while enforcing symmetry and consistency across random areas of the mask. The system builds a mask solutions database mapping circuit patterns to mask patterns. The system uses the mask solu...
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WO/2021/008856A1 |
Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other s...
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WO/2021/004705A1 |
A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has be...
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WO/2021/001092A1 |
Disclosed is a surface treatment apparatus and method for surface treatment of substrates such as wafers or substrates. The surface treatment apparatus comprises one or more support structures for supporting one or more substrates and on...
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WO/2020/261986A1 |
Provided is a thin film-attached substrate having a thin film having excellent chemical resistance. The thin film-attached substrate is characterized by including a thin film on at least one main surface of two main surfaces of the subst...
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WO/2020/256064A1 |
Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosph...
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WO/2020/257217A1 |
To calibrate a TDI photomask inspection tool, a photomask with a plurality of distinctly patterned regions is loaded into the tool. The plurality of distinctly patterned regions is successively illuminated with an EUV beam of light. Whil...
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WO/2020/256062A1 |
Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorbent body pattern when EUV exposure is conducted in an atmosphere including hydrogen gas.　The reflective mask blank compr...
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WO/2020/249332A1 |
Disclosed is a method of determining a complex-valued field relating to a structure, comprising: obtaining image data relating to a series of images of the structure, for which at least one measurement parameter is varied over the series...
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WO/2020/249434A1 |
In order to determine a production aerial image of an object to be measured as a result of an illumination and imaging with illumination and imaging conditions of an optical production system, firstly a measurement aerial image of the ob...
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WO/2020/247322A1 |
A metrology system for measuring wave-front aberration of an extreme ultraviolet (EUV) mask inspection system is disclosed. The test mask includes a substrate formed from a material having substantially no reflectivity for EUV illuminati...
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WO/2020/247324A1 |
Methods and systems for determining one or more characteristics of light in an optical system are provided. One system includes first detector(s) configured to detect light having one or more wavelengths shorter than 190 nm emitted from ...
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WO/2020/241116A1 |
The present invention provides a photomask blank which exhibits high adhesion of a resist film to a film containing chromium, and which is capable of achieving good resolution limit and good CD linearity during the formation of an assist...
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WO/2020/237317A1 |
Methods for forming microstructures in photocurable material are described. At least one image of light or radiation for curing the photocurable material is applied in a pattern corresponding to the image. The image is formed by near-fie...
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WO/2020/237928A1 |
An OLED display panel and a photomask. The OLED display panel comprises a first film layer (21), and a second film layer (22) formed on the first film layer (21), wherein the material of the second film layer (22) is an organic material,...
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WO/2020/241780A1 |
Provided are reflective photomask blanks and a reflective photomask which can compatibly suppress a projection effect and enhance the life of a mask. The reflective photomask blanks (10) are provided with: a substrate (1); a reflection u...
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WO/2020/236889A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236892A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236884A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236883A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236887A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236888A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/235612A1 |
The present invention addresses the problem of providing an EUV mask blank provided with a hard mask layer enabling a sufficient etching speed in a dry etching process having a sufficiently high etching selection ratio under the etching ...
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WO/2020/236893A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/236886A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2020/228594A1 |
Provided are an array substrate and a manufacturing method therefor, a display device, and a mask plate. The array substrate comprises a pixel defining layer having a first opening (201, 251), a second opening (202, 252), and a third ope...
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WO/2020/225412A1 |
For approximating imaging properties of an optical production system which images an object (7) to imaging properties of an optical measurement system (15, 4) when imaging the object (7), which imaging properties arise from an adjustment...
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WO/2020/225411A1 |
For the purpose of three-dimensionally determining an aerial image of a lithography mask (7) as a measurement intensity result of an imaging by means of an anamorphic projection exposure imaging optical unit of a projection exposure appa...
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WO/2020/226030A1 |
This quartz etching method comprises forming a mask over a quartz glass substrate, and using a hydrofluoric acid-based etchant solution to perform etching. This quartz etching method comprises preparing the quartz glass substrate, formin...
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WO/2020/221556A1 |
A method for reducing M3D effects on imaging is described. The method includes identifying points within a source plane of the photolithography system that are associated with pattern shifts resulting from diffraction of light off a phot...
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WO/2020/221547A1 |
A patterning device configured for use in a lithographic apparatus, the lithographic apparatus being configured to use radiation for imaging a pattern at the patterning device via projection optics onto a substrate. The patterning device...
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WO/2020/216572A1 |
Described herein are methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold...
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WO/2020/212107A1 |
Described herein is a method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patte...
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WO/2020/213661A1 |
[Problem] To provide: an adhesive agent for pellicles, which makes it possible to reduce a residue adhered to an exposure original plate that has been used in lithography, particularly ArF lithography, upon the peeling of the pellicle fr...
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WO/2020/213659A1 |
[Problem] To provide a pellicle, exposure original plate with pellicle, method for recycling exposure original plates and method for reducing peel residue, with which it is possible to reduce the residue which adheres to the exposure ori...
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WO/2020/213662A1 |
[Problem] To provide an adhesive for a pellicle that can reduce the amount of residue on an exposure original plate when the pellicle is peeled off from the exposure original plate after using lithography, in particular ArF lithography, ...
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WO/2020/212840A1 |
Methods are disclosed relating to the operation of a micro-structural fluid ejector in a fluid printing apparatus. The methods include providing an imaging system, capturing a digital image of the micro-structural fluid ejector and its s...
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WO/2020/210177A1 |
A system for stochastic reticle defect dispositioning is disclosed. The system includes a controller including one or more processors and memory. The one or more processors configured to acquire product metrology data of a product reticl...
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WO/2020/207774A1 |
A method for making a pellicle for EUV lithography, the method comprising: depositing a sacrificial layer onto a substrate; etching away part of the substrate so as to expose a part of the sacrificial layer; depositing a core layer onto ...
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