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WO/2023/143887A1 |
A cleaning system for cleaning a component related to a lithographic process such as a pellicle, reticle, wafer or another lithographic component, comprising at least one radiation emitter configured to, in use, irradiate a region of the...
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WO/2023/145929A1 |
Provided are: a phase shift mask in which there are few haze defects, more specifically, which can sufficiently suppress the occurrence of haze; and a method for manufacturing said phase shift mask. A phase shift mask (100) according to ...
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WO/2023/146179A1 |
Provided in one embodiment of the present invention is a method for preparing a pellicle membrane, which can minimize the loss of a light source while having thermal and durability characteristics. According to one embodiment of the pres...
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WO/2023/145604A1 |
Provided is a pellicle in which the membrane stress in the pellicle film is adjusted to be suitable, distortion due to turbulent flow, etc., is kept under control, and the structural stability is excellent. A pellicle (1) is provided w...
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WO/2023/146233A1 |
Provided in one embodiment of the present invention is a pellicle membrane capable of minimizing light loss while having thermal and durability properties. A method for manufacturing an EUV pellicle on the basis of a multilayer membrane ...
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WO/2023/141080A1 |
A method for performing pixel-based design rule checking (DRC) is described. This method is used to perform design rule checks for rectilinear and curvilinear designs. In some embodiments, the pixel-based approach is based on computation...
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WO/2023/137622A1 |
A method (300) and apparatus (600) for determining the size of a wafer pattern, a device (700), a medium and a program product. The method (300) for determining the size of a wafer pattern comprises: generating, on the basis of at least ...
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WO/2023/135773A1 |
The present invention provides an optical proximity effect correction method that takes into account the impact of off-axis chromatic aberration, which is generated in a case where a photosensitive substrate is exposed to pulse laser lig...
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WO/2023/136183A1 |
The present invention relates to a reflection-type mask blank comprising a substrate and a multi-layer reflection film capable of reflecting EUV light, an intermediate film, a protection film and an absorbent film provided on the substra...
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WO/2023/134175A1 |
The present invention relates to the technical field of semiconductors, and in particular to a negative development photoresist model optimization method. The method comprises the following steps: obtaining an initial negative developmen...
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WO/2023/134309A1 |
A mask layout correction method, which comprises the following steps: providing an initial mask layout, and acquiring graph point information in the initial mask layout; matching the graph point information in the initial mask layout wit...
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WO/2023/135131A1 |
When reproducing illumination and imaging properties of an optical production system during the illumination and imaging of an object by means of an optical measuring system of a metrology system, the optical measuring system is initiall...
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WO/2023/129642A1 |
Shipping containers for covers or baseplates of reticle pods include a first shell including first fixing features and a second shell including second fixing features. When the first shell and the second shell are joined, the shells defi...
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WO/2023/127799A1 |
A reflective mask blank for EUV lithography comprising a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and an absorption film that absorbs EUV light, in t...
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WO/2023/115611A1 |
A level set algorithm based reverse optical proximity effect correction method for super-resolution lithography. The method comprises: obtaining first mask data according to a target pattern, and constructing a level set function (S11); ...
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WO/2023/117853A1 |
According to an aspect there is provided an EUV pellicle comprising: a pellicle frame; and a pellicle membrane mounted on the pellicle frame and comprising a film of bundles of CNTs, wherein within any 2 µm × 2 µm region of the film: ...
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WO/2023/120566A1 |
The main purpose of the present invention is to provide a photomask that, using proximity exposure, enables miniaturization of transfer pattern dimensions and an improved taper angle. The present disclosure provides a photomask for pro...
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WO/2023/120026A1 |
Provided is a mask blank with which it is possible to form a fine space pattern on a pattern formation thin film. This mask blank has a structure in which a pattern formation thin film, a first hard mask film, and a second hard mask film...
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WO/2023/117314A1 |
Disclosed is a method of measuring a focus parameter from a focus target, and associated substrate and associated patterning device. The focus target comprises at least a first sub-target and a second sub- target, each having at least a ...
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WO/2023/119877A1 |
The purpose of the present invention is to minimize abrasion powder (dust) generated from the surface of a substrate holder due to friction between a mask/blank substrate and the substrate holder during transportation of the mask/blank s...
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WO/2023/121912A1 |
Reticle pod inner pods include a cover and a baseplate, with the cover and the baseplate contacting one another at contact surfaces. The contact surfaces of the cover and the baseplate each include different materials. The different mate...
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WO/2023/112767A1 |
The purpose of the present invention is to provide a technology which improves the hydrogen resistance of a phase shift film of a reflective phase shift mask blank for EUV light exposure, while suppressing crystallization of the phase sh...
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WO/2023/113850A1 |
A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to create an overlay target h...
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WO/2023/112330A1 |
Provided is a Si membrane structure (10) with which, during etching to convert a pellicle film on a Si membrane into a self-supporting film, the breakage risk of the pellicle film can be reduced by dispersing the stress applied to the pe...
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WO/2023/110292A1 |
An improved method and system for image alignment of an inspection image are disclosed. An improved method comprises acquiring an inspection image, acquiring a reference image corresponding to the inspection image, acquiring a target ali...
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WO/2023/113047A1 |
Provided are: a photomask blank that makes it possible to accurately form a fine resist pattern in a resist film; a method for manufacturing a photomask; and a photomask that is manufactured by means of said method. A mask blank (100) ac...
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WO/2023/110284A1 |
Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the meas...
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WO/2023/110291A1 |
A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a fi...
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WO/2023/110346A1 |
Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern comprising sub-resolution assist features (SRAFs) each having constant widths. The widths are set as conti...
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WO/2023/104687A1 |
In order to simulate properties of an optical production system, use is made of an optical measurement system comprising an illumination optical unit for an object to be imaged having a pupil stop in the region of an illumination pupil a...
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WO/2023/107298A1 |
A nonlinear crystal 300 including stacked strontium tetraborate SrB4O7 (SBO) crystal plates 335-1/2/3/4 that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubli...
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WO/2023/101972A1 |
Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods o...
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WO/2023/101330A1 |
Disclosed are: a pellicle for EUV lithography, which simultaneously satisfies the high transmittance and mechanical strength of crystalline silicon and can be manufactured in a large area; and a method for manufacturing same. The pellicl...
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WO/2023/094359A1 |
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present inven...
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WO/2023/097068A1 |
A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timefr...
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WO/2023/094177A1 |
A method for forming a pellicle for use in a lithographic apparatus is disclosed. The method comprises: providing a porous membrane formed from a first material; applying at least one layer of two-dimensional material to at least one sid...
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WO/2023/094908A1 |
A system includes a plate and a vacuum source. The plate has a first surface and a second surface opposite the first surface, the plate is configured to receive on the first surface a flexible substrate including a first section having a...
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WO/2023/094362A1 |
The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam in...
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WO/2023/095769A1 |
The purpose of the present disclosure is to provide a reflective photomask blank and a reflective photomask that maximize the effectiveness of a phase shift effect and that possess high transferability (especially resolution). A reflecti...
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WO/2023/094084A1 |
The present invention relates to an optical device for EUV radiation comprising: - an optical component for reflecting EUV radiation including a first electrode, - a second electrode arranged at a distance from the optical component, and...
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WO/2023/094127A1 |
There is provided an apparatus for adjusting the transmissivity of a pellicle membrane, said apparatus including an etching unit configured to etch material from the pellicle membrane, and a controller, wherein the controller is configur...
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WO/2023/089057A1 |
The invention relates to a method for measuring photomasks for semiconductor lithography, comprising the following steps: - loading a photomask into a recording unit of a measuring apparatus, - recording images of individual measurement ...
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WO/2023/088649A1 |
An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning pro...
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WO/2023/091734A1 |
A method is provided. The method includes forming a shrink material layer over a substrate including a photoresist pattern. The method also includes exposing the substrate with the shrink material layer to an activating radiation via a g...
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WO/2023/090867A1 |
The purpose of the present invention is to provide a technology which, when a reflective type blankmask used for EUV lithography is manufactured by applying an electron beam annealing technology to a multi-layer reflective film itself, i...
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WO/2023/088641A1 |
A grid dependency check for a simulation model is described. According to embodiments of the present disclosure, a grid dependency check can be advantageously performed faster and more efficiently compared to prior grid dependency checks...
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WO/2023/090777A1 |
The present invention relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. More specifically, the present invention relates to a method for manufacturing a pellicle for extreme ultraviolet lithography, th...
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WO/2023/086297A1 |
Reticle pods include inner pods where motion limiting features restrict translational motion of the cover and the baseplate relative to one another. The motion limiting features are in addition to gross alignment features included in the...
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WO/2023/085761A1 |
The present invention relates to a pellicle film for extreme ultraviolet lithography. More specifically, the present invention relates to a pellicle film, for extreme ultraviolet lithography, comprising a multi-component silicon compound...
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WO/2023/082411A1 |
A photomask, and a manufacturing method and exposure method therefor. The photomask comprises: a first graphical region (100) and a first cutting channel region (200), which surrounds the first graphical region (100), wherein a first tes...
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