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Matches 1 - 50 out of 37,756

Document Document Title
WO/2018/162316A1
The present invention relates to a method for analyzing at least one defective location (230, 730) of a photolithographic mask (200, 700), having the following steps: (a) obtaining measurement data for the at least one defective location...  
WO/2018/162281A1
The present invention relates to a method for ascertaining a repair shape (195) for processing at least one defect (140) of a photolithographic mask (100) including the following steps: (a) determining at least one correction value (185)...  
WO/2018/159785A1
Provided are: a reflective mask blank which is capable of reducing a shadowing effect of extreme ultraviolet (EUV) lithography, and which is capable of forming fine patterns; and a reflective mask. As a result, a semiconductor device can...  
WO/2018/159193A1
Provided is a substrate processing method comprising: a substrate rotating step for rotating a substrate, which has at least a portion of a circumferential end being an arc-shape, at a predetermined processing rotation speed around an ax...  
WO/2018/159392A1
Provided are: a reflective mask blank provided with a phase shift film having a phase difference and a reflectance which have little dependence on film thickness; and a reflective mask. The reflective mask blank is characterized in that:...  
WO/2018/158394A1
The invention relates to a device (1) for applying to a substrate (2) a liquid medium which is exposed to UV radiation. The device (1) has the following: a housing (114, 14) having an elongate chamber (122, 22), having at least one inlet...  
WO/2018/159163A1
Provided is a substrate processing device comprising: a substrate holding unit; a substrate rotating unit; a circumferential edge height position measuring unit; a processing-liquid nozzle; a processing-liquid supply unit; a nozzle drive...  
WO/2018/153654A1
The present invention relates to a method for transforming measurement data (640) of a photolithographic mask (300) for the extreme ultraviolet (EUV) wavelength range from first surroundings (150) into second surroundings. The method inc...  
WO/2018/153872A1
A patterning device (100), includes: an absorber layer (106) on a patterning device substrate (102); and a reflective or transmissive layer (104) on the patterning device substrate, wherein the absorber layer and the reflective or transm...  
WO/2018/156080A1
Methods and systems for fabricating gray scale photomasks and a gray scale photomask are provided. The method includes optically writing gray scale photomasks in a phase change chalcogenide thin film using tightly focused femtosecond las...  
WO/2018/155047A1
A light-shielding film 2 made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film 3 made up of a material containing chrome, oxygen, and carbon are laminated on a translucent substrate...  
WO/2018/151056A1
Provided are an EUV pellicle that has a high EUV transmittance and that causes less outgas and less contamination, and a method for manufacturing the EUV pellicle. A pellicle (100) is characterized by having: a pellicle film (101); a sup...  
WO/2018/148659A1
Methods of fabricating a damascene template for electrophoretic assembly and transfer of patterned nanoelements are provided which do not require chemical mechanical polishing to achieve a uniform surface area. The methods include conduc...  
WO/2018/141450A1
A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation...  
WO/2018/140502A1
Antireflection coatings for metasurfaces are described herein. In some embodiments, the metasurtace may include a substrate, a plurality of nanostructures thereon, and an antireflection coating disposed over the nanostructures. The antir...  
WO/2018/135467A1
Provided are a reflective mask blank and a reflective mask with which it is possible to reduce the shadowing effect of extreme ultraviolet lithography and to form an intricate pattern. By doing so, a semiconductor device is produced in a...  
WO/2018/135468A1
Provided is a substrate with a conductive film, which is used for the purpose of producing a reflective mask that is configured such that a positional shift thereof is able to be corrected by a laser beam or the like from the back side. ...  
WO/2018/136168A1
Aspects describing modified self-aligned quadruple patterning (SAQP) processes using cut pattern masks to fabricate integrated circuit (IC) cells with reduced area are disclosed. In one aspect, a modified SAQP process includes disposing ...  
WO/2018/136197A1
Embodiments of the present disclosure generally relate to methods and apparatus for processing one or more substrates, and more specifically to improved spatial light modulators for digital lithography systems and digital lithography met...  
WO/2018/122028A1
A method including: obtaining a first image location for an image feature of a first image of at least part of an object surface, obtaining a second image location for an image feature in a second image of at least part of the object sur...  
WO/2018/125249A1
In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing Optical Proximity Correction (OPC) model enhancement for Negative Tone Development (NTD) processes by including polymer compa...  
WO/2018/121141A1
A method for adding an auxiliary graph comprises: providing an OPC target graph, selecting a rule of adding only one auxiliary graph part according to an auxiliary graph benchmark rule, and establishing an additional rule of the auxiliar...  
WO/2018/125220A1
In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing Optical Proximity Correction (OPC) modeling via machine learning on simulated 2D optical images for Spin Exposure Develop (SE...  
WO/2018/125513A1
A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity fun...  
WO/2018/125219A1
In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing geometric kernel based machine learning for reducing Optical Proximity Correction (OPC) model error. For instance, there is i...  
WO/2018/123940A1
[Problem] To provide a halftone mask with which both a finer pattern and multi-gradation can be achieved. [Solution] A first semitransparent region comprising a first semitransparent film, a second semitransparent region comprising a lam...  
WO/2018/123939A1
[Problem] To provide a multi-gray level halftone mask which enables the exposure of a fine photoresist pattern. [Solution] On a transparent substrate, a semi-transmitting part comprising a pattern of a semi-transmitting film and a phase ...  
WO/2018/125115A1
Accounting for predicted mask infidelities is disclosed. A computer-readable medium includes computer-readable instructions configured to instruct a processor to predict mask infidelities and workpiece infidelities resulting from the pre...  
WO/2018/121967A1
A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at l...  
WO/2018/113168A1
A display panel (100), a production process for the display panel (100), and a photomask (200) for the production process. The production process for the display panel (100) comprises the following steps: doping a photo initiator (140) i...  
WO/2018/118088A1
Approaches based on differential hardmasks for modulation of electrobucket sensitivity for semiconductor structure fabrication, and the resulting structures, are described. In an example, a method of fabricating an interconnect structure...  
WO/2018/110511A1
A fine optical image generation element (100) is provided with a fine structure (120) in which a plurality of openings (140) are arranged on the basis of an arrangement pattern formed by combining at least two paracrystal patterns on the...  
WO/2018/104573A1
The present invention relates to compositions for photolithographic masks comprising a substrate and a covering having at least one electroconducting layer containing a nitride, a boride or a carbide, and to methods for preparing the same.  
WO/2018/104039A1
An overlay measurement (OV) is based on asymmetry in a diffraction spectrum of target structures formed by a lithographic process. Stack difference between target structures can be perceived as grating imbalance (GI), and the accuracy of...  
WO/2018/101729A1
The present application can provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation properties, has excellent etching selectivity, and can als...  
WO/2018/101732A1
The present application may provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation characteristics, and can be freely assigned various requir...  
WO/2018/099159A1
A display panel having a display area tessellated by repetition of a first subpixel group (10). The display panel includes an array of a plurality of first subpixel groups(10). Each of the plurality of first subpixel groups includes a fi...  
WO/2018/101731A1
The present application relates to a polymer composition and the use thereof. The present application can provide a polymer composition which has excellent self-assembly properties, enables a vertical orientation structure even for a sur...  
WO/2018/101730A1
The present application can provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation properties and can also freely provide a variety of requir...  
WO/2018/101743A2
The present application relates to a block copolymer and use thereof. The present application can provide a laminate which can form a highly aligned block copolymer on a substrate and thus can be effectively applied to manufacture of var...  
WO/2018/099716A1
A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of...  
WO/2018/100958A1
Provided is a mask blank of which the correction rate of EB defect correction is sufficiently fast even when a thin film for forming a transfer pattern is formed with an SiN material, and the ratio of correction rate for EB defect correc...  
WO/2018/101713A1
The present application relates to a method for manufacturing a polymer film. The present application relates to a manufacturing method for effectively forming a polymer film comprising, on a substrate, highly-aligned block copolymers ha...  
WO/2018/101742A1
The present application relates to a polymer composition and the use thereof. The present application can provide a polymer composition which has excellent self-assembly properties, enables a vertical orientation structure even for a sur...  
WO/2018/095249A1
A mask box comprises a bottom plate (1), a middle frame (2) disposed above the bottom plate (1), and a top cover (3) disposed above the middle frame (2). The bottom plate (1), the middle frame (2) and the top cover (3) form, in a surroun...  
WO/2018/091604A1
An apparatus and a method for cleaning a partial area of a substrate, in particular a photomask, are described. The apparatus has a cleaning head having a lower surface configured to be arranged above and in close proximity to the substr...  
WO/2018/091601A1
The invention relates to a holder for holding and for protecting a side of a photomask or a photomask having pellicle from a cleaning medium, to a method for cleaning such a photomask, and to a device for opening and closing a holder. Th...  
WO/2018/092050A1
Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered s...  
WO/2018/090630A1
Provided is a pixel arrangement structure comprising a plurality of pixel groups arranged repeatedly, each pixel group comprising four pixels. A first pixel (310) and a second pixel (320) are arranged in the same row, and a third pixel (...  
WO/2018/082396A1
A mask plate, comprising: a completely light-transmitting region (100), a completely opaque region (200), and a partially light-transmitting region located at a junction between the completely light-transmitting region (100) and the comp...  

Matches 1 - 50 out of 37,756