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WO/2013/084978 |
Provided is a photomask substrate for titania-silica glass EUV lithography having the high degree of flatness required for an EUV lithography photomask substrate and being capable of reducing the cost, treatment time, and the like requir...
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WO/2013/082980 |
An optical proximity correction (OPC) method. Parts not conforming to a rule in an original graph provided by a client are pre-processed so as to convert graphs of these parts into shapes that do conform to the rule; when OPC processing ...
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WO/2013/082800 |
A method for manufacturing chromium sidewall attenuation type phase-shifting mask used in EUV lithography comprises the following steps: first making a multilayer film reflector according to the manufacturing method of a conventional EUV...
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WO/2013/077430 |
Provided is a EUV mask blank production method with which deformation of a substrate due to a film stress in a Mo/Si multilayer reflective film can be mitigated, and temporal changes in the film stress in the Mo/Si multilayer reflective ...
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WO/2013/071838 |
Provided are a color film substrate and a manufacturing method thereof, a TFT array substrate and a manufacturing method thereof, and a liquid crystal display panel. The color film substrate comprises color film substrate units of differ...
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WO/2013/067064 |
An overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern eleme...
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WO/2013/062104 |
A method for manufacturing a reflective mask blank for EUVL is provided to enable eliminating warping on the chuck surface side of the glass substrate caused by the temperature difference in the thickness direction of the glass substrate...
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WO/2013/058385 |
Provided are: a phase-shift mask which is a large-sized photomask that enables the exposure of a large-sized area to light and has a constitution suitable for the formation of a fine pattern; and a method for producing the phase-shift ma...
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WO/2013/055708 |
Methods and systems for generating an indication of a changing electrostatic field between a sense electrode of a capacitance sensing integrated circuit and a specimen under inspection are presented. The capacitance sensing integrated ci...
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WO/2013/055586 |
A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another...
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WO/2013/053889 |
The present inventions relates to a substrate for a photolithographic mask comprising a coating deposited on a rear surface of the substrate, wherein the coating comprises (a) at least one electrically conducting layer, and (b) wherein a...
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WO/2013/050199 |
The invention relates to a reflective optical element 39 for the EUV wavelength range comprising a layer arrangement applied on the surface of a substrate, wherein the layer arrangement comprises at least one layer subsystem 37 consistin...
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WO/2013/051384 |
Disclosed are an asymmetric pattern forming technique using a phase shift mask, and also a technique for manufacturing a diffraction grating and semiconductor device, whereby improved accuracy of the product and a shortening of manufactu...
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WO/2013/046641 |
The present invention provides a reflective mask blank, a reflective mask, and methods for manufacturing the reflective mask blank and the reflective mask, suppresses reflectance at a light blocking frame, and improves qualities. This re...
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WO/2013/046627 |
Provided are a mask blank for reflection-type exposure, and a mask for reflection-type exposure, said mask being capable of accurately performing exposure transfer without having light reflected from areas other than a circuit pattern re...
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WO/2013/047195 |
In a mold blank provided with a hard mask layer, the hard mask layer has a composition that includes chromium, nitrogen, and oxygen, and also has a content changing structure in which the nitrogen content changes continuously or stepwise...
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WO/2013/043406 |
A method and system for optimization of an image to be printed on a substrate using optical lithography is disclosed in which a set of charged particle beam shots, some of which overlap, is determined so as to form a target pattern on a ...
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WO/2013/037607 |
A lithographic patterning device deformation monitoring apparatus (38) comprising a radiation source (40), an imaging device (42), and a processor (50). The radiation source being configured to direct a plurality of beams of radiation (4...
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WO/2013/036163 |
The invention relates to the field of radiation physics and polymer chemistry and can be used in electron beam lithography, diffraction optics, in the field of the production of metamaterials and in a number of other technical fields. Th...
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WO/2013/030820 |
The invention relates to a method for locally deforming an optical ele¬ ment for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parame...
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WO/2013/031863 |
The present invention provides a reflective mask blank having in the order listed a substrate, a multilayer reflective film for reflecting exposure light, and an absorption layer for absorbing said exposure light. The reflective mask bla...
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WO/2013/031230 |
This method for manufacturing a display panel includes the following steps: a first step in which a partition layer (311) is formed on a substrate (320); a second step in which the partition layer (311) is exposed using a first exposure ...
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WO/2013/027412 |
Provided is a reflective mask comprising a light-shielding frame having high light-shielding performance, and also provided is a method for manufacturing the reflective mask. A reflective mask comprising a light-shielding frame having a ...
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WO/2013/027453 |
In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shr...
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WO/2013/018730 |
Provided are: a pellicle for lithography, having a pellicle film which exhibits excellent light resistance at a wavelength of 250nm or less, particularly, at a wavelength of 200nm or less; a photomask fitted with the pellicle; and an exp...
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WO/2013/018414 |
Provided is a treatment liquid supply device for supplying a treatment liquid from a treatment liquid supply source, through a treatment liquid supply tube, to a supply nozzle which supplies the treatment liquid to a substrate. The treat...
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WO/2013/013849 |
An apparatus and a method to hold a patterning device (MA) configured to impart a beam of radiation with a pattern in its cross - section. The apparatus includes a base (308) configured to support the patterning device (MA) and an inner ...
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WO/2013/010976 |
The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) de...
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WO/2013/012299 |
The present invention relates to a mask, and to an optical filter manufacturing apparatus comprising same. The mask, which is to be used in a roll to roll process that forms a pattern on a base film moving along a curved surface, compris...
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WO/2013/010976 |
The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) de...
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WO/2013/012299 |
The present invention relates to a mask, and to an optical filter manufacturing apparatus comprising same. The mask, which is to be used in a roll to roll process that forms a pattern on a base film moving along a curved surface, compris...
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WO/2013/011112 |
The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic...
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WO/2013/009219 |
The invention relates to lithography, more precisely to methods for producing a resistive mask on the surface of a substrate, in particular a semiconductor substrate. The technical result of the invention consists in increasing the produ...
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WO/2013/004992 |
A method of manufacturing at least one component in at least one component area on a substrate using a machine that has a substrate processing part relatively moveable with respect to the substrate. The method comprises, at least when th...
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WO/2013/003102 |
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce s...
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WO/2012/172642 |
A pellicle application device equipped with: a mask-pressing body (5) that presses a horizontally arranged photomask (100); a pellicle-pressing body (12) that presses a pellicle assembly (101) from below; and an elevating device (20) tha...
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WO/2012/164824 |
This microstructure is manufactured such that a (discontinuous) joint is not visually perceived on the surface of a molded article formed using a transfer. A method for manufacturing a microstructure in which the microstructure is manufa...
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WO/2012/157697 |
The purpose of the present invention is to provide a technique for manufacturing a diffraction grating which is ideal for use in a spectrophotometer, has an apex angle in a protuberance of approximately 90 degrees, and has a high diffrac...
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WO/2012/157629 |
The purpose of the present invention is to provide a mask blank substrate, mask blank and transfer mask which, during grinding, make it possible to eliminate adverse effects on flatness due to a substrate mark comprising an oblique surfa...
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WO/2012/157181 |
Provided are an inspecting apparatus and an inspecting method, whereby samples, such as a wafer and a mask, which have equivalent circuit patterns formed thereon but have different shapes, can be inspected by one apparatus. The inspectin...
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WO/2012/157759 |
Provided is a pellicle which has a pressure-sensitive adhesive generating little outgas and with which it is possible to reduce paste residue when peeled from a photomask after exposure. This pellicle comprises a pellicle frame, a pellic...
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WO/2012/146647 |
The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focuse...
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WO/2012/146647 |
The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focuse...
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WO/2012/138557 |
A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Als...
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WO/2012/138557 |
A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Als...
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WO/2012/131479 |
The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structur...
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WO/2012/133109 |
The present invention provides a method for correcting a mask for EUV exposure having a Mo/Si multilayer film including a molybdenum layer and a silicon layer laminated onto a substrate, a protective film formed on the Mo/Si multilayer f...
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WO/2012/122751 |
A method for fabricating metallic material paraboloidal type two-dimensional focusing X-ray combined refraction lens comprises the following steps: (1) steps for fabricating the master lens; (2) steps for fabricating the sub-lenses; (3) ...
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WO/2012/125647 |
An extreme ultraviolet (EUV) actinic reticle imaging system suitable for discharge produced plasma (DPP) or laser produced plasma (LPP) reticle imaging systems using a thin film coating spectral purity filter (SPF) positioned on or proxi...
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WO/2012/125581 |
An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks...
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