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WO/2023/226540A1 |
Provided in the present invention are a magnetic random access memory device and a manufacturing method therefor. The device comprises magnetic thin film structure bodies, and an electrode capable of applying voltage to a magnetic thin f...
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WO/2023/228544A1 |
A compound according to one embodiment of the present disclosure is represented by formula (1). In formula (1), R1 to R4 each independently is an optionally substituted hydrocarbon group.
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WO/2023/226453A1 |
Disclosed in the present application are a silicon-wafer system and a repair method therefor, and an electronic device. By means of an optical interconnection layer which is additionally provided between a processor layer and a memory la...
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WO/2023/226062A1 |
Provided in the present application is a counter circuit. The counter circuit comprises multiple stages of counting modules corresponding to binary digits. Each stage of counting module is used for obtaining a carry signal and a present-...
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WO/2023/226061A1 |
Embodiments of the present disclosure provide an instruction test method and device, a test platform, and a readable storage medium, and relate to the technical field of semiconductors. The method comprises: when a target instruction to ...
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WO/2023/229814A1 |
A method for programming a memory array of a non-volatile memory structure, the memory comprising a population of MLC NAND-type memory cells, wherein the method comprises applying: (1) an inhibit condition to one or more bit lines of the...
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WO/2023/226128A1 |
Disclosed in the embodiments of the present disclosure are a delay adjustment method, a storage chip architecture and a semiconductor memory. The method comprises: measuring a first delay of a first signal path; on the basis of the first...
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WO/2023/228553A1 |
In the present invention, a reference potential used for detecting data stored in memory cells is optimized in accordance with the positions where the memory cells are arranged. This nonvolatile storage device includes memory cells and r...
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WO/2023/228869A1 |
The standard for computing storage capacity in modern computing is a bit, and the number of transistors (elements) that are to be nodes, namely, the number of bits is a quantitative unit of modern information communication. In contrast, ...
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WO/2023/226235A1 |
Provided in the embodiments of the present disclosure are a magnetic random access memory and a read-write method therefor, and a storage apparatus. The magnetic random access memory comprises a storage array, a write circuit and a write...
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WO/2023/221391A1 |
Embodiments of the present disclosure provide an anti-fuse circuit, comprising: an anti-fuse unit; a programming circuit, used to program the anti-fuse unit according to a programming signal; and a verification unit, comprising a first i...
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WO/2023/223127A1 |
A semiconductor device having a high storage density is applied in the present invention. This semiconductor device has a first layer and a first insulating material. The first layer has a first oxide semiconductor, first to ninth conduc...
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WO/2023/221390A1 |
Embodiments of the present disclosure provide an anti-fuse circuit, comprising: an anti-fuse unit; a reading unit for reading the anti-fuse unit to obtain a data signal; a verification control unit disposed between an input end of the re...
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WO/2023/224095A1 |
This fluorine-containing ether compound is represented by the following formula. R1-R2-CH2-R3[-CH2-R4-CH2-R3]x-CH2-R5-R6 (where R1 and R6 are organic groups having 1-50 carbon atoms, R2 is formula (2-1) or (2-2), R5 is formula (2-3) or (...
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WO/2023/223673A1 |
An optical recording medium 100 in one aspect of the present disclosure comprises a recording layer 10 and a dielectric layer 20 positioned on the recording layer 10 and including a porous organic structure. The method for recording info...
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WO/2023/223674A1 |
A recording medium 100 according to an aspect of the present disclosure comprises a recording layer 10 containing a polymer P. The polymer P contains a group G having nonlinear light absorption properties and has a glass transition tempe...
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WO/2023/221252A1 |
Disclosed in the present invention is a pulse voltage generation apparatus having an adjustable pulse width. The apparatus comprises: a switch control circuit, which is used for generating a control signal; a clock generation circuit, wh...
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WO/2023/221021A1 |
Memory systems, memory devices, and methods for read reference voltage management are provided. The memory system may include a memory device and a memory controller. The memory device may include one or more memory cells associated with...
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WO/2023/222458A1 |
The invention relates to improving the quality of an audio and/or video recording which is made by means of a mobile terminal (10), wherein the recording is started by means of a start activity to be manually performed on the mobile term...
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WO/2023/224890A1 |
In some embodiments, a method includes detecting an incorporation attribute of audiovisual content; analyzing an audio library to determine an audio file that maps to the incorporation attribute; selecting the audio file from the audio l...
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WO/2023/223126A1 |
Provided is a semiconductor device having a novel configuration. The present invention has: a base die having a first power supply circuit that generates a first voltage; a first die having a second power supply circuit that generates a ...
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WO/2023/223151A1 |
The present invention relates to a new process for the production of a phonograph disc for analog storing, recording and/or reproduction of a sound content, as well as to a phonograph disc obtainable by means of the aforementioned process.
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WO/2023/225384A1 |
Disclosed herein are computer-implemented devices, systems, and methods of sanitizing a transcript. In an example, such a method includes selecting a transcript to be sanitized, identifying potential redactions to be made in the transcri...
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WO/2023/221342A1 |
Disclosed in the present invention are a DDR dual-in-line memory module for correcting an error by using a data buffer, an operation method for the DDR dual-in-line memory module, and a memory system. The DDR dual-in-line memory module c...
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WO/2023/221219A1 |
The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate having a first surface; a plurality of transistors located on the first surface and arra...
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WO/2023/223692A1 |
A nonlinear absorbing material in one aspect of the present disclosure includes a compound represented by the following formula (1). In formula (1), R1 to R12, independently of each other, represent groups containing at least one atom se...
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WO/2023/223574A1 |
This fixing device comprises: a case body that has an accommodation space for accommodating an object to be fixed on the inside of circumferential wall parts standing from a bottom wall part; a pair of retaining parts that are rotatably ...
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WO/2023/222533A1 |
The invention provides a resistive memory comprising: - a layer comprising a titanium-based material (11); - a second layer comprising a first phase-change material (12); and - a first electrode (13) and a second electrode (14) which are...
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WO/2023/221196A1 |
The present disclosure relates to the technical field of semiconductors. Disclosed are an address mapping relationship determination method and apparatus, and a storage medium. The address mapping relationship determination method compri...
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WO/2023/224093A1 |
This fluorine-containing ether compound is represented by the following formula. R1-CH2-R2[-CH2-R3-CH2-R2]x-CH2-R4 (Where: R1 and R4 are terminal groups which include 2 or 3 polar groups, in which each polar group bonds to a different ca...
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WO/2023/221597A1 |
The present application discloses a storage array and a working method for the storage array. The storage array comprises a plurality of memory cells, a plurality of word lines extending in a row direction, a plurality of bit lines exten...
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WO/2023/221389A1 |
An anti-fuse circuit, comprising: an anti-fuse unit (10); a programming circuit (20), connected to the anti-fuse unit (10), the programming circuit (20) being used for programming the anti-fuse unit (10) according to a programming contro...
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WO/2023/221729A1 |
Disclosed are a ferroelectric memory and a control apparatus therefor, a method for improving the durability of the ferroelectric memory, and a device. The control apparatus for the ferroelectric memory comprises a signal control unit (9...
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WO/2023/224596A1 |
Various embodiments comprise systems, methods, architectures, mechanisms, apparatus, and improvements thereof for scaling and summing a plurality of weighted-data-representative analog signals provided by columns of in-memory computing b...
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WO/2023/224917A1 |
Methods and systems for generating trim-pass metadata for high dynamic range (HDR) video are described. The trim-pass prediction pipeline includes a feature extraction network followed by a fully connected network which maps extracted fe...
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WO/2023/220976A1 |
Disclosed in the present application is a data storage method. The data storage method comprises: writing data into a first cache region and a second cache region of a page cache; writing data in a third cache region of the page cache, w...
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WO/2023/223693A1 |
A recording medium according to the present disclosure comprises a recording layer containing an organic compound having nonlinear light absorption properties, and the organic compound has a molar absorption coefficient of at least 90 mo...
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WO/2023/216692A1 |
The present disclosure relates to a molecular module assembly device and a molecular module assembly method. The molecular module assembly device comprises a plurality of microfluidic devices, the plurality of microfluidic devices being ...
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WO/2023/216789A1 |
The present application relates to the technical field of semiconductors and provides a one-time programmable memory and a control method therefor, a storage system, and an electronic device, for use in solving the problems that the area...
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WO/2023/219545A1 |
A fingerprint sensor, comprising fingerprint sensing circuitry configured to sense a fingerprint of a finger, and to provide a representation of the fingerprint; a sensor interface coupled to the fingerprint sensing circuitry, and compri...
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WO/2023/216357A1 |
The present disclosure relates to the technical field of memory testing, and in particular, to a test method and test apparatus for a memory, an electronic device, and a computer readable storage medium. The test method for a memory comp...
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WO/2023/220157A1 |
A suspension assembly includes a baseplate having an upper surface and a lower surface opposite the upper surface, a load beam mounted to the baseplate, a cylindrical hub extending from the upper surface, wherein the cylindrical hub comp...
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WO/2023/219413A1 |
A method for modifying audio content for a listener is disclosed. The method includes, determining a crisp emotion value defining an audio object emotion for each audio object. The method includes determining a composition factor represe...
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WO/2023/218279A1 |
Provided is a semiconductor device that has a high storage density and is highly reliable. The semiconductor device comprises first to third layers that are laminated. The first layer includes a delay signal generation circuit and a row ...
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WO/2023/219813A1 |
Technology is disclosed herein for a memory system that compensates for different programming speeds in two sets of memory cells when reading those two sets of memory cells. The memory system programs a group of the memory cells to one o...
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WO/2023/217281A1 |
Disclosed in the present application are a repair method in a phase change storage apparatus, and a phase change storage apparatus and an electronic device. The method comprises: determining that a target phase change storage unit requir...
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WO/2023/219960A1 |
A filter assembly has a housing. The housing has an inner body and an outer body surrounding at least a portion of the inner body. The inner body has a base extending in a lateral direction and a first sidewall extending axially outward ...
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WO/2023/201715A9 |
A gate driving circuit, a display panel, a driving method, and a display apparatus. A gate driving circuit (110) comprises an input module (11), a pull-up node (PU), an output module (12), a first pull-down node (PD1), a first pull-down ...
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WO/2023/219812A1 |
Aspects of a storage device are provided that apply advanced thermal throttling with multi-tier extreme thermal throttling. Initially, a controller determines whether a first temperature measurement indicates that a temperature of the me...
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WO/2023/216316A1 |
The present invention provides a driving circuit and a driving method therefor, and a memory. The driving circuit comprises a word line driving circuit and a first control circuit; the word line driving circuit comprises an input end, an...
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