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Patent Searching and Data


Matches 1 - 50 out of 3,830,406

Document Document Title
WO/2020/182551A2
An RF power variable capacitor capable of operating at at least 50 watts in the MHz range. The capacitor has a composite HDK-NDK ceramic dielectric. The HDK (high dielectric constant) component comprises an active matrix of barium stront...  
WO/2020/182327A1
The present invention relates to a process for producing a shaped organic charge storage unit, especially a secondary battery, the electrodes of which comprise an organic redox-active polymer, and which includes a polymeric solid electro...  
WO/2020/184111A1
This wireless switch is provided with: a switch body; a push button that is connected to the switch body in a state of being movable between a non-operating position and an operating position along an approaching/separating direction wit...  
WO/2020/181432A1
An intelligent quick charge circuit for a lithium battery comprises a power supply circuit, a controller, and an energy storage circuit. The power supply circuit is connected to the controller and a power supply input. An output of the p...  
WO/2020/182800A1
The invention provides a holder for snap-fitting a thermal fuse to an electronic component, wherein the holder comprises: a bottom surface for mounting the holder to a carrier comprising the electronic component, wherein the bottom surfa...  
WO/2020/181422A1
The present application relates to a panel assembly (10) and an electronic device (1) comprising the panel assembly (10). The panel assembly (10) comprises a display panel (100), a reference signal generation circuit (200) and a compensa...  
WO/2020/185745A1
Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon mater...  
WO/2020/183997A1
An inductor 1 comprises: wire 2 which has a conductor 4 and an insulating film 5 positioned on the entire peripheral surface of the conductor 4; and a magnetic layer 3 in which the wire 2 is embedded. The magnetic layer 3 comprises magne...  
WO/2020/181587A1
Disclosed are a display panel manufacturing method, a display panel, and an electronic device. The method comprises: manufacturing a BOLED and a first waterproof layer on a thin film transistor (TFT) substrate to obtain a TFT substrate p...  
WO/2020/183848A1
The present invention provides a male connector 11 provided with a plurality of male terminals 16 to be connected to a plurality of female terminals 14 provided to a female connector 12, wherein: the male connector 11 has a hood part 23 ...  
WO/2020/185461A1
In accordance with some embodiments, systems, methods and media for single photon depth imaging with improved precision in ambient light conditions are provided. In some embodiments, the system comprises: a light source; a single photon ...  
WO/2020/184655A1
Provided is an Al bonding wire with which sufficient bond reliability can be obtained at bonding wire bond portions in high temperature states at which a semiconductor device using the Al bonding wire is operated. The Al bonding wire is ...  
WO/2020/184802A1
The present invention provides a method for manufacturing a manganese-based magnet, in which magnetization and coercivity may be improved by imparting an orientation to a magnetic body. A manganese-based magnet having excellent magnetic ...  
WO/2020/186100A1
The one-piece socket contact includes a body extending along a longitudinal axis and having a first end and a second opposite the first end. The second end defining a cavity therein and configured to receive a wire having a wire terminat...  
WO/2020/182639A1
The invention relates to a terminal (100) for connecting an electrical conductor (200), comprising: a housing (10); a current bar (12) disposed in the housing (10); a clamping spring (13), disposed in the housing (10), for clamping the c...  
WO/2020/184513A1
A battery monitoring apparatus (51) has a battery ECU (10), a plurality of voltage monitors (20), and a wireless device. The wireless device comprises a main unit (16) provided to the battery ECU (10) and sub-units (26) respectively prov...  
WO/2020/185978A1
A connector includes first and second sets of conductive terminals aligned in rows. Insulative housings surround intermediate sections of the terminals. A first insulative insert partially surrounds tail sections of the first set of term...  
WO/2020/185242A1
A dynamic misregistration measurement amelioration method including taking at least one misregistration measurement at multiple sites on a first semiconductor device wafer, which is selected from a batch of semiconductor device wafers in...  
WO/2020/184235A1
[Problem] To provide a semiconductor integrated circuit device having a power generation function, which makes it possible to suppress an increase in size of a circuit board. [Solution] A power generation function-equipped semiconductor ...  
WO/2020/186205A1
Epitaxial lateral overgrowth (ELO) III-nitride layers are grown on or above an opening area of a growth restrict mask deposited on a substrate, wherein the growth of the ELO III-nitride layers and/or a subsequent regrowth layer form one ...  
WO/2020/183822A1
The present invention provides a semiconductor package on which a semiconductor substrate is mounted, wherein the heat resistance of the semiconductor substrate is reduced. This semiconductor package comprises a semiconductor substrate...  
WO/2020/185721A1
A solenoid valve (300), comprising a solenoid enclosure (302) having a conduit opening (304) configured to have wires (116) disposed there through; a solenoid coil (312) disposed at least partially within the solenoid enclosure (302); a ...  
WO/2020/182191A1
Provided is an electrochemical energy storage device (100), including a housing (1), the housing (1) includes a first side wall (11) and a second side wall (12) which are disposed opposing to each other, and an inner cavity (14) for acco...  
WO/2020/184027A1
The present invention reduces the height of a semiconductor device formed by stacking semiconductor chips. This semiconductor device is provided with a first package, a second package, and a connection part. The first package is provided...  
WO/2020/186120A1
In some examples, a substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supp...  
WO/2020/113003A3
An apparatus including a housing; sensors configured to sense one or more locations upon which a user is gripping the housing; sensors including antenna modules configured to transmit a signal based on the one or more locations upon whic...  
WO/2020/184917A1
The present invention provides: a sulfur-doped silicon negative electrode material which has an internal pore channel having an average width of 500 nm to 3 μm, and has an average diameter of 1-5 μm; a method for producing same; a lith...  
WO/2020/185985A1
A power tool including a housing that has a battery pack receiving portion configured to receive an interface of a battery pack, device contacts extending from the housing and configured to mechanically and electrically engage with the b...  
WO/2020/184665A1
A carbon electrode material according to the present invention is composed of carbonaceous fibers (A), carbon particles (B) other than graphite particles, and a carbonaceous material (C) that binds the carbonaceous fibers and the carbon ...  
WO/2020/183729A1
A laser device (100) that comprises a plurality of laser diodes (1) that emit laser beams that have different wavelengths, a partial reflection mirror (12) that is a mirror that makes the plurality of laser beams emitted by the plurality...  
WO/2020/186226A1
Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er...  
WO/2020/181535A1
An InGaN-based LED epitaxial wafer and a fabrication method thereof are disclosed, wherein the InGaN-based LED epitaxial wafer includes: a substrate (11); an InGaN layer (12), formed on a surface of the substrate (11), having an In conte...  
WO/2020/182038A1
The present invention belongs to the technical field of household electrical appliance manufacturing, and specifically relates to a main control panel assembly and a clothes washing machine. The present invention aims to solve the proble...  
WO/2020/184039A1
[Problem] To provide a proton conductor of which the decrease in the conductivity is prevented and the improvement of the transport number is achieved. [Solution] The proton conductor has a perovskite-type structure and contains a metal ...  
WO/2020/181769A1
Provided is a laser compound light source (100), including a COS array (11), a collimating lens array (10), a mirror array (14), a focus lens (15) and an optical fiber (16), wherein at least two monochromatic lasers are emitted from the ...  
WO/2020/183282A1
A battery includes: an anode; an electrolyte including: an oxidizing gas; an active cathode material including a metal halide; and a solvent including a heterocyclic compound; and a current collector contacting the active cathode material.  
WO/2020/183880A1
Provided are a device and method with which the amount removed can be controlled at the atomic level and which are capable of selective removal from protrusions on the object being processed. One embodiment provides a substrate process...  
WO/2020/185463A1
A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, osc...  
WO/2020/184562A1
This wavelength conversion member comprises: quantum dot phosphor bodies and filler; and a resin cured article that encloses the quantum dot phosphor bodies and filler. The content of the filler is at least 3 mass% with respect to the to...  
WO/2020/184859A1
A transfer device for transferring a semiconductor chip comprises: a stage having one surface on which a first substrate having a semiconductor chip mounted thereon is placed; a work table on which a second substrate to which the semicon...  
WO/2020/184620A1
Provided is a vapor chamber comprising a sealed space in which an operating fluid is sealed, the sealed space having a first flow path and a liquid flow path portion adjacent to the first flow path.  
WO/2020/184822A1
Disclosed is an electronic device including: an antenna device which includes a housing, at least one antenna element disposed on one surface or the inside of a printed circuit board disposed inside the housing, and a radio frequency int...  
WO/2020/181640A1
A display device, comprising a display screen, a storage battery unit, and a control chip. The display screen comprises sub-pixel units. The sub-pixel unit comprises a gate line and a fingerprint signal line crossing each other, a transi...  
WO/2020/184900A1
The present invention pertains to a negative electrode for a lithium secondary battery, a method for manufacturing same, and a lithium secondary battery including same. More specifically, the negative electrode for a lithium secondary ba...  
WO/2020/184545A1
[Problem] To provide an electronic component which has heat insulation properties and dielectric resistance and can be suitably used for modularization by injection molding and the like. [Solution] An electronic component which comprises...  
WO/2020/185958A1
A method for direct recycling of degraded lithium-ion battery (LIB) cathodes includes relithiating degraded lithium nickel cobalt manganese oxide (NCM) by mixing the cathode particles with a eutectic molten-salt solution and heating the ...  
WO/2020/182241A1
The invention relates to a method for producing an all-solid-state lithium battery, comprising a positive electrode, a negative electrode and a solid electrolyte layer arranged in between, wherein first a solid electrolyte is applied to ...  
WO/2020/183585A1
The present invention comprises: a TFT layer (4); a light emitting element layer (5) that includes a first electrode, a light emitting layer, and a second electrode; a wavelength conversion layer (43) that is formed as a layer above the ...  
WO/2020/185248A1
A single-event-upset (SEU) stabilized memory cell includes a latch portion including a cross-coupled latch, and at least one cross coupling circuit path in the latch portion including a first series-connected pair of vertical resistors.  
WO/2020/181731A1
Provided are a thin film transistor and a manufacturing method therefor, which belong to the field of thin film transistors. The thin film transistor comprises: a semiconductor material layer, a second electrode, an isolation layer, and ...  

Matches 1 - 50 out of 3,830,406