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WO/2003/096423A1 |
Portions excluding magnetic elements of a laminate film of magnetic films or the like constituting magnetic elements (1) are oxidized/nitrided or oxynitrided to be insulated by a plasma processing using a conductive mask (17), whereby a ...
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WO/2003/092083A1 |
A magnetoresistant element comprising a multilayer film structure comprising nonmagnetic layer (3) and, superimposed on both major surfaces thereof, a pair of ferromagnetic layers (1 and 2) wherein at interfaces with the nonmagnetic laye...
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WO/2003/092084A1 |
A magnetoresistive element includes a tunnel insulation layer including at least one compound selected from a group consisting of Al oxide, nitride, and oxy-nitriding, a first magnetic layer and a second magnetic layer formed so as to sa...
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WO/2003/089946A1 |
A giant magnetoresistive spin valve sensor (250) is provided in which first and second ferromagnetic layers (252, 254) comprise a Heusler alloy. A non-ferromagnetic spacer layer (256) is positioned between the first and second ferromagne...
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WO/2003/090290A1 |
A magnetoresistance effect element comprises a multilayered film structure including a tunnel insulating layer (3) and a pair of magnetic layers (1 and 2) stacked via the tunnel insulating layer (3) and has different resistance values wi...
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WO/2003/090213A1 |
Perpendicular magnetic media are described for use in magnetic recording and data storage. For example, a magnetic medium may include a substrate, a layer of titanium formed over the substrate, a layer of platinum formed over the layer o...
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WO/2003/088217A1 |
A vertical magnetic recording medium exhibiting excellent noise characteristics in which magnetic interaction is reduced in a magnetic layer. The vertical magnetic recording medium (10) comprises a nonmagnetic substrate (1), an underlyin...
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WO/2003/085750A1 |
Reading characteristics, as well as writing characteristics, are improved by applying a more-novel-than-ever material to a ferromagnetic layer. A magnetoresistance effect element comprising a pair of ferromagnetic layers facing each othe...
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WO/2003/085649A1 |
A polycrystalline structure (24) has a base layer (31) stretching over a substrate (23). Small magnetic crystalline particles (32) are scatterlingly present on the base layer (31). The magnetic crystalline particles (32) are formed of an...
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WO/2003/085674A2 |
An magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupli...
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WO/2003/083841A1 |
A magnetic recording medium has a base structure, and a synthetic ferrimagnetic structure which is disposed on the base structure and forms a recording layer. The synthetic ferrimagnetic structure includes at least a bottom magnetic laye...
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WO/2003/083840A1 |
A magnetic recording medium is provided with at least two antiferromagnetically coupled magnetic layers on a VMn alloy underlayer on an amorphous-like seed layer. The underlayer may contain 55 at.% to 80 at.% V and the rest Mn. The seed ...
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WO/2003/083842A1 |
A vertical magnetic recording medium having a low-noise characteristic compared to media of a permalloy or sendust crystalline material, comprising a high-flatness soft magnetic backing layer, and enabling recording/reproduction of infor...
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WO/2003/081680A1 |
A pin junction device (10) wherein a ferromagnetic p-type semiconductor layer (11) and a ferromagnetic n-type semiconductor layer (12) are junctioned through an insulating layer (13). The pin junction device exhibits a tunneling magnetor...
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WO/2003/081672A1 |
A magnetic memory device capable of improving write characteristic by providing a magnetic flux concentrator which can apply a current magnetic field generated by a write word line effectively to the storage layer of a TMR element. The m...
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WO/2003/078701A1 |
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be usef...
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WO/2003/077257A1 |
A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer a...
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WO/2003/071300A1 |
A magnetoresistive spin-valve sensorincludes a first layer (6-1) made of a magnetic material, a second layer (6-2) made of a magnetic or nonmagnetic material and disposed on the first layer,and a third layer (6-3) made of a magnetic mate...
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WO/2003/069691A1 |
A magnetic reluctance element, wherein at least one of a pair of ferromagnetic layers sandwiching a non-magnetic layer has a composition represented by (MxLy)100-zRz, at the interface with the non-magnetic layer and the above non-magneti...
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WO/2003/069674A1 |
A magnetic memory device having excellent device characteristics and a high reliability, in which the tunnel insulating layer of a TMR element is prevented from being oxidized or reduced. A volatile magnetic memory device (1) comprises a...
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WO/2003/067600A2 |
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnetic to a magnetic memory cell. An antiferromagnetic layer...
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WO/2003/061755A2 |
A shielded substrate assembly that contains a magnetic shield with a layer of magnetic shielding material (24); the magnetic shield has a magnetic shielding factor of at least about 0.5. The magnetic shield contains nanomagnetic material...
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WO/2003/060919A2 |
A resistive memory element (144), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (132) is disposed within the first metal layer (136) of thememory element (144). The thin oxi...
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WO/2003/060933A1 |
A high-frequency magnetic thin film characterized by comprising a first layer made of a T-L composite (where T is Fe or FeCo, and L is one or two kinds of C, B, and N) and a second layer formed on one side of the first layer and made of ...
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WO/2003/058609A1 |
A magnetic recording head 22 includes a write pole 30 having alternating layers 46, 48 of Fe and Co and a return pole 32 magnetically coupled to the write pole 30. The write pole 30 is annealed and may have a saturation magnetization gre...
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WO/2003/054862A1 |
A high areal recording density, perpendicular magnetic recording medium with reduced or substantially zero DC noise, comprising: (a) a non-magnetic substrate having a surface; and (b ) a layer stack formed over the substrate surface and ...
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WO/2003/049086A1 |
A high areal recording density, anti-ferromagnetically coupled ('AFC') perpendicular magnetic recording medium comprises: a layer stack formed over the surface of a non-magnetic substrate (2), comprising, in overlying sequence: an underl...
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WO/2003/049085A1 |
A magnetic recording medium (100) comprises a substrate (1), a first orientation control layer (2), a second orientation control layer (4), a soft magnetic layer (6), a nonmagnetic layer (8), a recording layer (12), and a carbon protecti...
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WO/2003/043017A2 |
The invention concerns a magnetic device with magnetic tunnel junction, memory array and read/write methods using same. Said device (8) comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulatin...
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WO/2003/043018A1 |
A scalable magnetoresistive tunneling junction memory cell (5) comprising a fixed ferromagnetic region (55) having a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an electrically insul...
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WO/2003/043036A1 |
The invention relates to a method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device involving the use of an AAF (artificial antiferromagnetic) layer system and of an antiferromagn...
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WO/2003/036734A2 |
A magnetoresistance effect element comprising a ferromagnetic tunnel coupling with a tunnel barrier layer sandwiched by at least a pair of ferromagnetic layers wherein a magnetization free layer constituted of one of the ferromagnetic la...
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WO/2003/034496A1 |
An information recorder which prevents a recording layer from undergoing a strong magnetic field even if received by an electronic apparatus loaded with an information storage device, e.g., MRAM utilizing the magnetization direction cont...
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WO/2003/032339A2 |
Improvements in the production of high-performance latching magneto-optic garnet materials are provided. It has been recognized that high-Europium magneto-optic garnets will offer superior properties in devices such as isolators, circula...
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WO/2003/032338A1 |
The invention concerns a spin-valve magnetoresistive device (1) consisting of a stack of layers including at least two magnetic layers (2, 3) whereof the relative orientation of their magnetizing directions can vary under the influence o...
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WO/2003/025942A2 |
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free l...
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WO/2003/025946A1 |
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped...
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WO/2003/023431A1 |
A method for manufacturing a magnetic field sensor (100), including the step of providing a keeper material (108) proximate to at least a portion of magnetic field sensing structure (104). The magnetic field sensor includes at least a su...
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WO/2003/021689A1 |
A ferromagnetic thin film based digital memory having a plurality of bit structures electrically interconnected with information storage and retrieval circuitry that avoids information loss in one bit structure because of operating the o...
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WO/2003/021579A1 |
A thin film magnetic structure, magnetic devices, and method of producing the same, wherein (110) textured, symmetry broken body centered cubic or body centered cubic derivative crystalline structures epitaxially grown on hexagonal shape...
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WO/2003/019568A2 |
The invention relates to a control device for reversing the direction of magnetisation of a controlled ferromagnetic device (8), such as a magnetic storage element, comprising: a first electrode (3), a first ferromagnetic layer (4), a no...
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WO/2003/019590A1 |
A method of etching a structure including a magnetic material, the method includes providing a structure (70) including a magnetic material (80), applying a mask material (84) to at least a portion of the structure, and reactive ion beam...
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WO/2003/019586A1 |
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-functio...
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WO/2003/017258A1 |
A magnetic recording medium comprising an orientation control film for controlling the orientation of the film right above the orientation control film, a vertical magnetic film where the easy−magnetizing axis is largely oriented verti...
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WO/2003/016207A1 |
A fractal structure in which a fractal dimension featuring the self−similarity is formed of mutually different two regions and which has at least one heterojunction. Particularly, in a star−shaped fractal structure, a heterojunction ...
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WO/2003/017295A1 |
The layer system having an increased magnetoresistive effect contains at least one soft magnetic detection layer, a non-magnetic decoupling layer, which rests on the detection layer, and a layer partial system, which is located at a dist...
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WO/2003/014758A1 |
A magnetic transducer (head) according to the invention includes a free layer structure comprising two free layers exchange coupled across a thin spacer structure of comprising two spacer layers of nonmagnetic material separated by a fer...
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WO/2003/010758A1 |
A write head (66) for writing information bits to magnetic storage media (94) comprises a first write pole (72) for producing a first magnetic field in a first direction and a second write pole (70) for producing a second magnetic field ...
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WO/2003/009313A2 |
A process for producing an iron cobalt alloy exhibiting magnetic anisotropy is disclosed. The alloy also exhibits a high magnetic moment, low coercivity and has uniaxial properties, making it suitable for use as the top pole of a magneti...
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WO/2003/003353A1 |
A shield and pole material with reduced magnetostriction is used which preserves good magnetic characteristics. This material is used in recording heads in tape and disk drives. The material is a repeating sequence of three layers. One l...
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