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WO/2016/200421A1 |
This application relates to manufacturing techniques for producing thin magnetic elements. In particular, the manufacturing processes are designed to accommodate the mechanical properties of sintered magnetic substrates. One of the manuf...
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WO/2016/195350A1 |
The present invention relates to a ferrite sheet and, more particularly, to a ferrite sheet and a method for manufacturing the same, the ferrite sheet comprising acicular ferrite powder and having a uniaxially-oriented magnetic direction...
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WO/2016/195352A1 |
The present invention relates to a ferrite complex sheet and a manufacturing method therefor and, more specifically, to a ferrite complex sheet and a manufacturing method therefor, the ferrite complex sheet comprising first and second fe...
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WO/2016/196157A1 |
A spin valve magnetoresistance element has an even number of free layer structures having ferromagnetic or antiferromagentic coupling with respecto to associated pinning layers via non-magnetic spacers. It may have a configuration in whi...
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WO/2016/181340A1 |
The present invention concerns a magnetic-photoconductive material including orientable magnetic moments or spins, the material being configured to generate photo-carriers permitting to orientate or re-orientate the magnetic moments or s...
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WO/2016/157922A1 |
Provided is a soft magnetic film having little Bs reduction even at high temperatures, and a sputtering target used for forming said soft magnetic film. A soft magnetic film having a composition formula in terms of atomic ratios of (CoaF...
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WO/2016/158865A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/157764A1 |
This thin film magnet is provided with: a substrate; an amorphous oxidation suppressing layer formed on the upper surface of the substrate; a first magnetic material layer formed on the oxidation suppressing layer; an intermediate layer ...
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WO/2016/158923A1 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier la...
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WO/2016/147000A1 |
The present invention relates to new multiferroic materials. More particularly, the present invention relates to new multiferroic single phase ceramic materials as well as to thin films formed from these materials, methods of preparing t...
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WO/2016/139878A1 |
[Problem] To provide a storage element having both high information holding characteristics and low power consumption. [Solution] The storage element comprises a fixed layer, a storage layer, an intermediate layer, and a heating layer. T...
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WO/2016/121860A1 |
The present invention pertains to an iron oxide ferromagnetic membrane that contains iron oxide and that is formed on a discretionary substrate, wherein the ε phase content of the iron oxide is 70% or greater and the crystal seed diamet...
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WO/2016/122402A1 |
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, a fixed magnetic layer structure ...
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WO/2016/117882A1 |
The present invention relates to an electronic component comprising magnetic nanoparticles, and a manufacturing method thereof. An electronic component comprising magnetic nanoparticles, and a manufacturing method thereof, according to t...
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WO/2016/117359A1 |
Provided is a method for forming a perpendicular magnetization type magnetic tunnel junction element. This method comprises: a step for forming a tunnel barrier layer on a first magnetic layer of a body to be processed; a step for coolin...
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WO/2016/113618A1 |
The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) havi...
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WO/2016/111306A1 |
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by elect...
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WO/2016/104117A1 |
The present invention pertains to a rare earth thin film magnet containing Pr, Fe, and B as essential components, the rare earth thin film magnet being characterized in that a first layer comprising a Pr phase and an α-Fe phase is provi...
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WO/2016/105665A1 |
A material stack of a synthetic anti-ferromagnetic (SAF) reference layer (601) of a perpendicular magnetic tunnel junction (MTJ) (600) may include an SAF coupling layer (606). The material stack may also include and an amorphous spacer l...
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WO/2016/099648A1 |
A method of forming a magnetoresistive (MR) sensor with a composite tunnel barrier comprised primarily of magnesium oxynitride and having a MR ratio of at least 70%, resistance x area (RA) product < 1 ohm-nm2, and fewer pinholes than a c...
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WO/2016/079741A1 |
The present invention is in the field of spintronics, and relates to a highly efficient spin filter device, such as a spin-polarizer or a spin valve, and a method for fabrication thereof.
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WO/2016/080373A1 |
[Problem] To provide a magneto-resistive device and a magnetic memory, which are capable of reducing the effects of elements contained in an underlying layer being diffused even when a memory layer is made thin. [Solution] This magneto-r...
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WO/2016/076799A1 |
A spin torque oscillator (STO) comprises an oscillation layer configured to generate a high frequency magnetic field with a low driving current wherein the oscillation layer is made of an alloy Co85lr(i5.x)-Rhx where x is about 1 to 14 a...
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WO/2016/067949A1 |
A rare earth thin-film magnet which is composed of an Nd-Fe-B film formed on an Si substrate, and which is characterized in that: if the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies conditional e...
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WO/2016/052939A1 |
The present invention relates to an electromagnetic shielding sheet capable of improving reliability. Particularly, the present invention provides a composite magnetic sheet for electromagnetic shielding structured such that an independe...
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WO/2016/047578A1 |
An FePt-based sintered body sputtering target containing C and/or BN and characterized by having an AuCu alloy particle area ratio of 0.5%-15% in a polished surface having a vertical cross-section relative to a sputter surface of the tar...
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WO/2016/048248A1 |
There is provided a magnetic element including a ferromagnetic reference layer having a fixed or pinned magnetization direction, a ferromagnetic free layer having a switchable magnetization direction based on spin transfer torque, an ins...
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WO/2016/042854A1 |
Provided is a magnetoresistive effect element, wherein a magnetoresistive element is provided with a first magnetic layer (2), a second magnetic layer (6) and a first non-magnetic layer (4) disposed between the first magnetic layer and t...
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WO/2016/034780A1 |
Permanent magnet characterized by a block of laminations in powder form and strip form, the laminations being regularly alternated for the starter function on the one hand and flywheel function on the other, the starter having a high mag...
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WO/2016/021403A1 |
A hard disk having an increased-density magnetic dot pattern, that prevents side erase. Provided is a storage medium comprising: a thin-layer magnetic body capable of generating and erasing skyrmions; a non-magnetic body provided so as t...
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WO/2016/002806A1 |
Provided is a skyrmion memory circuit (30) in which magnetic element skyrmions (40) can be circularly transferred. In the skyrmion memory circuit, current is applied in a closed-channel shaped magnetic body (10) between an outer circumfe...
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WO/2015/198523A1 |
The present invention addresses the problem of providing a magnetic thin film having a high magnetic anisotropy constant (Ku) and a large coercive force (Hc), and an application device including the magnetic thin film. This magnetic thin...
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WO/2015/186389A1 |
The present invention is a rare-earth thin-film magnet which comprises Nd, Fe, and B as essential components, characterized by comprising a structure in which an α-Fe phase and an Nd2Fe14B phase have been alternately arranged three-dime...
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WO/2015/182645A1 |
This magnetoresistive element (1) is provided with a substrate (10), and a laminate body provided above the substrate (10) and formed by laminating an antiferromagnetic layer (14) and a ferromagnetic layer (15). The ferromagnetic layer i...
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WO/2015/182644A1 |
This magnetoresistive element (1) is provided with a substrate (10), a laminate body (12) provided above the substrate (10) and formed by laminating an antiferromagnetic layer (14) and a ferromagnetic layer (15) in that order from the su...
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WO/2015/182643A1 |
This magnetoresistive element (1) is provided with a substrate (10), an antiferromagnetic layer (14) provided above the substrate (10), a ferromagnetic layer (15) provided on the antiferromagnetic layer (14) so as to cover the entire pri...
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WO/2015/174083A1 |
A method for manufacturing a perpendicular magnetic recording medium that includes a magnetic recording layer having the desired film thickness while maintaining high magnetic anisotropy and having more homogeneous magnetic characteristi...
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WO/2015/166159A1 |
Permanent magnet comprising a stack of ferromagnetic and antiferromagnetic layers. This permanent magnet comprises: at least two antiferromagnetic layers (40); at least two first ferromagnetic layers (42, 50), the magnetization direction...
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WO/2015/156727A1 |
The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and magnetic droplet-...
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WO/2015/141313A1 |
A non-volatile storage device containing a laminate and a control unit is provided. The laminate comprises a first ferromagnetic layer that has a fixed direction of magnetization, a second ferromagnetic layer, and a first non-magnetic la...
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WO/2015/137021A1 |
Provided is a magnetoresistive element (1) which is provided with a first magnetic layer (2), a second magnetic layer (8), a first non-magnetic layer (4) that is arranged between the first magnetic layer and the second magnetic layer, an...
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WO/2015/136802A1 |
This invention provides a magnetic storage element (110) containing a laminate (SB0) that has a first laminate section (SB1) and a second laminate section (SB2). The first laminate section contains a first ferromagnetic layer (10), the d...
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WO/2015/129865A1 |
This invention produces more stable perpendicular magnetization and makes it possible to use a voltage to switch between perpendicular magnetization and in-plane magnetization. This multiferroic layered structure (10), which exhibits bot...
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WO/2015/121905A1 |
To reduce variance of characteristics, such as an electric resistance value, in a substrate surface, in the cases of forming a film on a substrate by means of a sputtering method using an insulating material target. This tunnel magnetore...
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WO/2015/105834A1 |
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a materia...
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WO/2015/105836A1 |
A magnetoresistance element and a method of fabricating same, the element comprising a substrate, a seed layer structure and a free layer structure, the former including at least a ferromagnetic seed layer promoting an increased magnetic...
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WO/2015/105830A1 |
A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a m...
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WO/2015/102415A1 |
The present invention relates to a composite sheet and a portable terminal having the same, the composite sheet comprising: a first insulation member having a plurality of micro-pores for forming an insulating air pocket; and a second in...
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WO/2015/080009A1 |
Provided is a magnetic material sputtering target comprising a sintered compact, the B content of which is at least 17 at% but no more than 40 at%, the balance being one or more elements selected from Co and Fe, wherein the magnetic mate...
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WO/2015/064049A1 |
A storage element having a layered structure and being configured for storing information is disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface ...
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