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WO/2012/093587A1 |
Provided is a Heusler alloy which is Co2Fe(GaxGex-1) and satisfies 0.25 < X < 0.60, has a spin polarization rate as determined by PCAR of 0.65 or greater, and reaches a Curie point of 1,288 K. A CPP-GMR element that uses this Heusler all...
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WO/2012/086575A1 |
Provided is a sputtering target comprising a metal having the composition of 20 mol% or less of Cr, 5 mol% or more of Pt, and Co as the remainder. This target is a ferromagnetic sputtering target characterized in having a metal base (A) ...
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WO/2012/081668A1 |
Provided is a ferromagnetic material sputtering target that: is a sputtering target comprising a metal with a composition including Cr at 20 mol% max., Ru at 0.5-30 mol%, and Co as the remainder; and is characterized by the target struct...
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WO/2012/082998A1 |
A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. ...
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WO/2012/081669A1 |
Provided is a ferromagnetic material sputtering target that: is a sputtering target comprising a metal with a composition including Cr at 20 mol% max., Pt at 5 mol% min., and Co as the remainder; and is characterized by the target having...
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WO/2012/081694A1 |
Provided is technology for high-quality epitaxial growth of a group IV semiconductor (111) surface on a ferromagnetic Heusler alloy (111) surface. This method for forming a spin conductance structure includes: a first ferromagnetic lamin...
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WO/2012/073671A1 |
[Problem] To provide: a bismuth-substituted rare earth iron garnet crystal film (RIG) capable of being produced with an insertion loss of less than 0.60 dB and a high yield; and an optical isolator. [Solution] A bismuth-substituted rare ...
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WO/2012/070991A1 |
A nanolaminated multielement material (1) described by the formula Mn+i-δA1-αXn-p, wherein n=1, 2, 3 or higher, δ ≤ 0.2, α ≤ 0.2, and p ≤ 0.2, A is at least one A-group element, and X is at least one of C, N, and O. The nanolam...
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WO/2012/057087A1 |
Provided is a soft magnetic alloy for a heat-assisted magnetic recording medium having superior saturation magnetic flux density, non-crystallization properties, crystallization temperature, and corrosion resistance. A sputtering target ...
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WO/2012/056087A1 |
In one embodiment, an apparatus comprises a nano-scale spectrum sensor configured to be electromagnetically excitable at a predetermined frequency based on received ambient electromagnetic radiation. The apparatus is also configured to b...
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WO/2012/042168A1 |
The invention relates to an yttrium iron garnet ferrite for microwave components, characterized in that its general formula is YaTRbBicFedAleIn1CagCuhZriVjCokSiIO12±γ, where: -1 ≤ γ ≤ 1; 3(a+b+c+d+e+f) + 2(g+h+i) + 4(i+l) +5j = 24...
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WO/2012/028664A1 |
The invention relates to a magnetic device comprising a reference layer (2), the magnetization direction of which is fixed, and a storage layer, (3), the magnetization direction of which is variable. In a write mode, the magnetization di...
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WO/2012/029331A1 |
Disclosed is a ferromagnetic material sputtering target which is a sintered body sputtering target that is composed of a metal mainly composed of Co and non-metallic inorganic material particles. The ferromagnetic material sputtering tar...
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WO/2012/029498A1 |
An Fe-Pt-type ferromagnetic material sputtering target which comprises a metal having such a chemical composition that Pt is contained in an amount of 5 to 60 mol% and a remainder made up by Fe and a metal oxide. The purpose of the prese...
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WO/2012/023252A1 |
This magnetic tunnel junction element comprises a first ferromagnetic layer, a second ferromagnetic layer, and an insulting layer that is provided between the first ferromagnetic layer and the second ferromagnetic layer. The insulating l...
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WO/2012/021297A1 |
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pin...
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WO/2012/014132A1 |
The invention relates to a writeable magnetic element, comprising a stack of layers having a magnetic writing layer, characterised in that the stack comprises a central layer (13, 53, 90) made of at least one magnetic material having a d...
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WO/2012/011294A1 |
Disclosed is a non-magnetic material dispersion-type ferromagnetic material sputtering target in which non-magnetic material particles comprising oxides are dispersed in a metal having a composition containing 20 mol% or less of Cr, and ...
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WO/2011/154477A1 |
The present invention relates to a spin transfer oscillator (30) comprising a magnetic stack (E) including at least two magnetic layers (32, 34), at least one of said two magnetic layers, referred to as the oscillating layer (32), has va...
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WO/2011/152333A1 |
Provided is a Bi-substituted rare earth iron garnet single crystal, which has a composition represented by R3-xBixFe5-wAwO12 (R must contain Gd, and may optionally contain at least one rare earth element selected from a group consisting ...
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WO/2011/149366A1 |
A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanocl...
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WO/2011/148944A1 |
Disclosed is a thin film magnetic device which comprises a magnetic layer, an alcohol etchable layer, and a factor barrier layer. The magnetic layer is provided on top of a substrate. The alcohol etchable layer is provided on the magneti...
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WO/2011/128585A1 |
The present invention relates to a method for manufacturing particles such as magnetic micro- or nanoparticles. Said manufacturing method comprises the following steps: depositing a layer of a first sacrificial material on a substrate; d...
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WO/2011/120495A1 |
The invention relates to a domain-structured ferroic element, a method and an apparatus for generating and for controlling the electrical conductivity of the domain walls at room temperature in these elements and applications of the elem...
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WO/2011/114921A1 |
A method of feeding, as a grease, a grease composition for greasing bearings, said grease composition comprising 35-85 wt% of a fluorinated grease and 15-65 wt% of a fluorinated organic solvent, which comprises spraying said grease compo...
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WO/2011/093252A1 |
Disclosed is a magnetoresistive effect element which uses a vertically magnetized material and has a high TMR ratio. Intermediate layers (31, 32) are inserted on the outer sides of a structure that consists of a CoFeB layer (41), an MgO ...
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WO/2011/088375A2 |
A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includesa pinned layer, a barrier layer, a free layer and a composite hardmask or top electr...
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WO/2011/072498A1 |
A magnetoresistive thin film material with extremely high sensitivity and preparation method thereof are provided. The film with the structure of buffer layer/MgO/NiFe/MgO/protective layer is prepared by annealing at a high temperature i...
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WO/2011/070850A1 |
Disclosed is a sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase. The sputtering target comprises: a Co-containing metal matrix phase; and a phase containing SiO2 and having an oxide dispersed therein in an ...
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WO/2011/066579A2 |
An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the e...
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WO/2011/062005A1 |
Disclosed is a ferromagnetic tunnel junction element which is capable of reducing the current value necessary for writing both in a magnetic field writing type MRAM and in a spin injection magnetization reversal type MRAM. Specifically d...
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WO/2011/051498A1 |
Magnetic setting member for a wristwatch movement, comprising: a balance (1); permanent magnets (2, 10) for bringing said balance into at least one rest position; and an escapement (5, 6) for transmitting pulses to the balance in order t...
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WO/2011/048343A1 |
The invention relates to a method for producing a magnetophotonic crystal (100) characterised in that said method includes the following steps: producing a photonic crystal in a first layer (102); producing a magneto-optical crystal in a...
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WO/2011/039001A1 |
The invention relates to a transformer core or transformer sheet and a method for the production thereof. According to the invention, the transformer sheet (and the transformer core) comprises magnetically soft layers (22) and separator ...
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WO/2011/016399A1 |
Disclosed are a magnetostrictive film which can exhibit excellent magnetostrictive properties at around a zero field; and a process for producing the magnetostrictive film. The magnetostrictive film comprises a metal glass film which is ...
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WO/2011/008614A1 |
A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning la...
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WO/2011/001746A1 |
Provided are a magnetic memory element which enables a reduction in current density at the time of switching without impairing the reliabilities of read endurance, retention performance, and so on, and a driving method therefor. Specific...
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WO/2011/001068A1 |
The invention relates to a method for changing the direction of magnetization in a top layer (2) including a ferromagnetic material, characterized in that: a) the top layer (2) is placed over a bottom layer (3) that is not magnetically c...
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WO/2010/150853A1 |
Disclosed are: a process for producing a magnetic thin film having an insulating property, capable of acting as a permanent magnet, and capable of exhibiting improved remanent magnetization compared to the conventional magnetic thin film...
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WO/2010/143602A1 |
Disclosed is a soft magnetic Co-Fe-Ni alloy for a perpendicular magnetic recording medium, which has excellent saturation magnetic flux density, amorphousness, corrosion resistance and hardness. The Co-Fe-Ni alloy contains, in at%, 70-92...
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WO/2010/144836A1 |
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. Th...
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WO/2010/143370A1 |
The crystal c-axis orientations of a magnetic layer in the vicinity of the two opposing junction wall surfaces of a magnetoresistive element are aligned in the directions substantially perpendicular to the junction wall surfaces. A magne...
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WO/2010/137679A1 |
Disclosed is a magneto-resistance effect element with a high TMR ratio, to which a perpendicular magnetization material is applied. Laminated ferri-structures (51, 52) each composed of a perpendicular magnetization magnetic layer (21, 22...
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WO/2010/136527A1 |
The present invention relates to a magnetic device (200) comprising a reference magnetic layer (201) with a fixed magnetisation direction either aligned with the plane of the layer (201) or perpendicular to the plane of the layer (201), ...
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WO/2010/134435A1 |
Provided is a ferromagnetic tunnel junction structure characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy as any of ferromagnetic layers. The ferromagnetic tunnel junction structure is further characterized in th...
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WO/2010/126854A1 |
A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell in...
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WO/2010/113791A1 |
Disclosed is a magnetic sheet which is obtained by forming a high-resistance soft magnetic film on a substrate by sputtering, said film having both high resistance and good soft magnetic characteristics. Specifically disclosed is a magne...
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WO2010110029A1 |
Provided is a magnetoresistive element of a spin injection write type that is thermally stable and at the same time is capable of inverting a magnetization at a low current, and also provided is a magnetic memory using the magnetoresisti...
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WO2010110297A1 |
Disclosed are a magnetic sensor and a magnetic-storage device, in which magnetic information applied to a ferromagnetic body is detected without applying a current to the ferromagnetic body. The magnetic sensor utilizes the magneto-resis...
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WO/2010/107098A1 |
Provided is a method for evaluating the properties of a ferrite with which it is possible to continuously measure changes in magnetic properties that accompany changes in ferrite composition by preparing one sample only. A ferrite thin f...
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