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JP5204171B2 |
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JP5204066B2 |
Provided is a MEMS device that includes first and second lower electrodes on a substrate. The MEMS device also includes a first driving electrode forming a capacitance element having a first capacitance between the first lower electrode ...
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JP2013519230A |
Systems including varactor devices are provided. A varactor device (400) includes a gap closing actuator (GCA) varactor (200), includes a drive comb structure (201), an output varactor structure (514) defining an output capacitance, a re...
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JP5198322B2 |
A MEMS element of an aspect of the present invention including a first electrode provided on a substrate, a second electrode which is provided above the first electrode and which is driven toward the first electrode, an anchor provided o...
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JP2013090442A |
To provide an electrostatic drive type actuator and a variable capacitance element capable of suppressing occurrence of a sticking phenomenon, and a method of manufacturing the same with high yield and high form accuracy.In a variable ca...
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JP5191510B2 |
The invention relates to a bellows in a vacuum capacitor, whose bellows structure (1) comprises a carrier material (2) and at least one electrically conductive layer (5, 6), whereby the latter has a uniform thickness over the entire bell...
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JP5193639B2 |
An example of the present invention is a micromechanical device including, a substrate in which a signal line is provided, a micromachine which is mounted on the substrate, is formed of a conductive material into a beam-like shape, is el...
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JP2013080790A |
To implement a beam structure device capable of reducing variation in a thickness of a flexible beam and a manufacturing method thereof.A manufacturing method of a beam structure device comprises: a first step of preparing a flexible bea...
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JP5177214B2 |
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JP2013051297A |
To provide a variable capacitance device which is capable of obtaining desired capacitance by preventing oxidation of an electrode.A variable capacitance device (1) includes: a fixed plate (2); a movable beam (3) provided so as to face t...
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JP2013042024A |
To provide a variable capacitance device having a high surge breakdown voltage and capable of suppressing occurrence of ESD breakdown.A variable capacitance device 1 comprises: a support plate 2; a movable beam 3; upper drive capacitance...
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JP5133814B2 |
When a positive voltage of V1 is applied to a drive capacitor with a braking voltage V2 at 0V, a moveable electrode moves toward the drive electrode, and a capacitance C of a tunable capacitor becomes smaller. When the braking voltage V2...
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JP2013016776A |
To provide a manufacturing method of a piezoelectric film element and a manufacturing method of a piezoelectric device which conduct microfabrication of a non-lead piezoelectric film in a short time, maintains high insulation quality, an...
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JP2013012710A |
To provide a piezoelectric film element incorporating an alkali niobium oxide containing piezoelectric film which has an increased film thickness and excels in piezoelectric characteristic, and a piezoelectric film device and a manufactu...
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JP5115402B2 |
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JP2013004841A |
To provide a variable capacitance device capable of obtaining three or more capacitance values as well as reducing the size of the device and signal loss, and a drive voltage control circuit.A drive capacitance C1 of a variable capacitan...
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JP2013004842A |
To provide a variable capacitance device capable of obtaining three or more capacitance values as well as reducing the size of the device and signal loss.A drive capacitance C1 of a variable capacitance element 2 changes according to dri...
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JP5109171B2 |
A position indicator (100) has a variable capacitor 200, a resonant circuit (36) configured with a position indicating coil (13) and a resonant capacitor (15a), and a rod (11). The variable capacitor (200) has a flat disc-shaped dielectr...
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JP2012253243A |
To provide: a piezoelectric film element securing etching selectivity between a non-lead piezoelectric film and a lower electrode, and capable of being fabricated with high precision; a method for manufacturing a piezoelectric film eleme...
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JP2012532470A |
A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plural...
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JP5050022B2 |
According to one embodiment, a MEMS device includes an electrode on a substrate, a movable structure which is supported in midair above the electrode by first and second anchor portions on the substrate, and moves toward the electrode, a...
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JP2012176445A |
To prevent a malfunction of a variable capacitor due to sticking and suppress characteristic variations.The variable capacitor 1 includes a fixed plate 2, a movable plate 3, a dielectric film 8 and electrodes 4A, 4B, 5A, 5B, 6, 7A, 7B. T...
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JP2012178379A |
To prevent a variable capacitance element from malfunction due to sticking.The variable capacitance element 1 includes a support plate 2, a movable beam 3, lower capacitor electrodes 4A, 4B, lower drive electrodes 5A, 5B, an upper capaci...
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JP5024049B2 |
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JP2012173942A |
To provide a communication apparatus which can improve communication distance performance while achieving size reduction.A proximity non-contact communication apparatus 1 includes a movable mechanism and by the movable mechanism, an open...
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JP2012169589A |
To provide a capacitive element capable of accurately securing the value of capacitance, and a variable capacitive element capable of securing an enough capacitance variable rate, as well as a resonance circuit, communication system, wir...
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JP2012152839A |
To provide a method of manufacturing a beam structural device capable of preventing a beam structure from being distorted or deformed even when a heat joining method is used.A bottom surface side laminate body 10 is formed by laminating ...
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JP4990286B2 |
A micro-electromechanical device has a substrate (60), a movable element (15), a pair of electrodes (40) arranged on the substrate and on the movable element to move the movable element, and a controller (50) to supply the electrodes. To...
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JP4980539B2 |
A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive ...
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JP3176047U |
To provide a gamma match matcher having excellent weather resistance without a rotating portion or a contact portion as a structure in which a metal rod is used as an electrode of a capacitor and the electrode is taken in and out of a ma...
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JP2012094791A |
To further expand a variable capacitance area in a variable capacitance device.A variable capacitance device 1 comprises a supporting plate 2, a moving plate 3, driving electrodes 4, 5, variable capacitance electrodes 7A, 8A, and variabl...
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JP4933016B2 |
The present invention relates to an assembly of variable capacitance as well as to a method of operating the assembly. In the assembly, a variable capacitor is formed by a variable coverage or a variable distance of at least one first (4...
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JP4927758B2 |
A micro-electro-mechanical device including a first substrate; a first contact disposed on a first surface of the substrate; a piezoelectric actuator disposed over the first surface of the substrate; a second contact coupled to the actua...
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JP4913778B2 |
A capacitive device includes a substrate, a movable electrode, and a fixed electrode. The movable electrode is located above a surface of the substrate and is movable with respect to the substrate along directions that are substantially ...
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JP4910679B2 |
A variable capacitor including a first electrode part, which is provided at a fixed part that includes a substrate, and a movable part, which has a second electrode part forming the capacity of said variable capacitor between itself and ...
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JP4910215B2 |
To simplify the configuration of a variable capacitor while surely bringing a dielectric and an electrode into contact. The dielectric 16 is housed in a box body 15 with an opening section 22 and a main surface section 23. A conductive p...
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JP2012060030A |
To stably manufacture electrostatic capacitive elements having different capacitance without changing the shape of an electrode and the number of stacking of the electrodes.The electrostatic capacitive element comprises a dielectric laye...
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JP4899449B2 |
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JP4894446B2 |
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JP4895986B2 |
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JP4895985B2 |
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JP4885209B2 |
According to one embodiment a microelectromechanical (MEMS) switch is disclosed. The MEMS switch includes a substrate, a plurality of actuation electrodes mounted on the substrate, a plurality of bottom electrodes mounted on the substrat...
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JP2012039051A |
To provide a non-contact power supply system, which is excellent in safety and durability without use of electromagnetic induction or electromagnetic waves, capable of making an electrode that can be moved at any of positions, such as a ...
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JP4883605B2 |
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JP4880878B2 |
The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating dev...
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JP2012028542A |
To provide a variable capacity device capable of suppressing charge transfer.In a variable capacity device 1, a movable plate 3 of beam structure is supported with a support plate 2. Electrodes each facing the movable plate 3 and the sup...
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JP2012023167A |
To reduce thickness, with capacitance being possible to be changed easily.A variable capacitance type capacitor 30 includes an inside electrode body 51 formed in tube shape, and an outside electrode body 41 at which an insert hole 42 int...
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JP4855508B2 |
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JP2012009637A |
To provide a variable capacity device which is less affected by self driving of a movable beam, and can widen the voltage range of a bias voltage where the RF capacity changes slowly.The variable capacity device 1 comprises a support pla...
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JP4814316B2 |
The present invention provides a capacitive RF-MEMS device comprising a vertically integrated decoupling capacitor (14). The decoupling capacitor (14) therefore does not take extra area. Furthermore, the RF-MEMS according to the inventio...
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