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JP4940890B2 |
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JP4921325B2 |
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JP4913778B2 |
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JP4915130B2 |
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JP2012069580A |
To provide dielectric ceramic for tunable devices which has large variation of a relative dielectric constant for dc bias electric fields, small temperature dependence of the relative dielectric constant, and small dielectric loss in a w...
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JPWO2010050277A |
The characteristic is provided with the nanomaterials layer which consists of two or more kinds of mutually different nanomaterials, the 1st electric conduction layer electrically connected with at least one copy of a nanomaterials layer...
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JPWO2010050277A1 |
特性が互いに異なる複数種類のナノ材料から
なるナノ材料層と、ナノ材料層の少なくとも
一部と電気的に接続された第１の導電層と、
絶縁膜を介してナノ材料層及び第１の導...
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JP4907266B2 |
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JP2012060030A |
To stably manufacture electrostatic capacitive elements having different capacitance without changing the shape of an electrode and the number of stacking of the electrodes.The electrostatic capacitive element comprises a dielectric laye...
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JP4888418B2 |
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JP4880878B2 |
The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating dev...
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JPWO2010032759A1 |
保持した電荷の経時安定性及び熱安定性が高
く、電荷保持特性に優れたエレクトレット及
び該エレクトレットを具備する静電誘導型変
換素子の提供。極性官能基を２個以上有...
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JPWO2010032759A |
Offer possessing the electret which the temporal stability and heat stability of the electric charge which were kept were high, and was excellent in the electric charge maintenance characteristic, and the electret of an electrostatic ind...
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JP2012503872A |
A variable capacitance system including a first electrode, a second electrode, and a layer of elastically deformable dielectric material positioned between the first and the second electrode. An electret forms with the first electrode a ...
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JP4873007B2 |
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JP2012502493A |
A patterned electret structure (21) on a substrate (10) comprises a dielectric structure comprising at least one non-patterned dielectric layer (22), and a charge pattern (14) in the dielectric structure and/or at a surface of a dielectr...
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JP4861790B2 |
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JP2012009929A |
To solve the problem that accuracy is low in a capacity value concerning a conventional variable capacity element.A variable capacity element of the present invention includes: a first capacity element C1 connected between a first power ...
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JP2011249722A |
To provide an electret manufacturing apparatus and an electret manufacturing method capable of manufacturing the homogeneous electrets excellent in maintainability with no deterioration of electrodes.The electret manufacturing apparatus ...
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JP4810661B2 |
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JP4812765B2 |
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JP2011211029A |
To reduce the size of a variable capacitive element using a ferroelectric substance that can attain expansion of a variable region of electrostatic capacity, while at the same time, maintaining a high Q-value.The variable capacitive elem...
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JP4798870B2 |
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JP4766956B2 |
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JP4763358B2 |
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JP4753609B2 |
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JP4749052B2 |
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JP4743222B2 |
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JPWO2009128503A1 |
表面電位が高いエレクトレットおよび該エレ
クトレットを備える静電誘導型変換素子の提
供。樹脂（ａ）を含む層（Ａ）と、前記樹脂
（ａ）以外の樹脂（ｂ）または無機物（...
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JPWO2009119678A1 |
表面電荷密度が高いエレクトレットおよび該
エレクトレットを備える静電誘導型変換素子
の提供。比誘電率が１．８〜３．０の高分子
化合物（ａ）を含む層（Ａ）と、前記高...
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JP4731515B2 |
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JP2011138544A |
To provide a variable capacity element having a simpler configuration and excellent resistance to received voltage.The variable capacity element includes a ferroelectric layer made of ferroelectric material, and two electrodes provided t...
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JPWO2009104699A1 |
電荷の熱安定性に優れたエレクトレットおよ
び該エレクトレットを備える静電誘導型変換
素子の提供。繰り返し単位（ａ）、繰り返し
単位（ｂ）および繰り返し単位（ｃ）か...
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JP2011119482A |
To further widen the flexibility of design of an internal electrode, a capacitance value, and so on, facilitate manufacturing, and suppress the influence of the parasitic capacitance, in a variable capacitance device configured by connec...
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JP2011101041A |
To provide a variable capacitance element having a structure such that electric field sensitivity to a control voltage can be set irrelevantly to a breakdown voltage for a signal voltage, and an electronic apparatus.The variable capacita...
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JP2011086924A |
To provide an energy conversion film having a high ability to convert energy, wherein a porous resin film having a high expansion ratio is obtained by forming a thermoplastic resin stretched film having a specific structure even without ...
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JP4671664B2 |
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JP2011073960A |
To provide a method for forming a dielectric thin film capable of expressing high tunability when used for a thin film capacitor and the like, and a thin film capacitor and a tunable device comprising a dielectric thin film obtained by t...
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JP4666564B2 |
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JP2011060830A |
To provide a film having permittivity which can be controlled by external stimulation and can be varied by light irradiation, and to provide an electronic device using the same.A thin film transistor 20 includes a glass substrate 21, a g...
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JP4651355B2 |
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JP4649451B2 |
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JP2011044705A |
To rapidly, inexpensively and easily grow an epitaxial thin film on a textured substrate.By using a combustion chemical vapor deposition method (CCVD) or the like, a perovskite type dielectric layer is formed on a textured substrate. A p...
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JP2011040581A |
To provide a higher performance laminated capacitance element by more reducing an electrode resistance thereof.The capacitance element 10 includes a first electrode 21, a second electrode 22, a third electrode 23, a fourth electrode 24, ...
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JP4634459B2 |
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JP4638232B2 |
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JP4627676B2 |
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JP4622518B2 |
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JP4613954B2 |
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JP2011009446A |
To improve both the reliability of a MEMS element and the characteristics of a MIM element.The MEMS device includes: the MEMS element 10, including a first lower electrode 12 provided on a substrate 1, a first insulator 20 which is provi...
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