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JP06033370 |
PURPOSE: To provide the device enabling to again charge by a simple means, when the surface charge density of a cap, etc., produced from an electret fiber sheet is lowered. CONSTITUTION: The device has a heating chamber 3 whose bottom su...
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JP06020874 |
PURPOSE: To obtain a variable capacitor which is low in loss, wide in variable range of capacity, and stable in temperature change. CONSTITUTION: A capacitor comprises two parallel metal plates 3 and a piezoelectric element 4 for varying...
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JP06020873 |
PURPOSE: To realize a variable capacitor which is low in loss, wide in a variable range of capacity, and stable in temperature change by using a magnetostrictive element as a means to change the spacing between plates. CONSTITUTION: A me...
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JP06017307 |
PURPOSE: To provide a polyolefin-based split fiber filter made to be an electret, containing a phase structure having small molecular mobility and exhibiting excellent charge-retainability at initial stage and over a long period. CONSTIT...
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JP06013262 |
PURPOSE: To obtain composite material for electret which is suitably used for an electrostatic type electroacoustic transducer such as a microphone and a head phone. CONSTITUTION: In the manufacturing method of composite material for ele...
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JP05320894 |
PURPOSE: To obtain the target material having excellent mechanical strength by forming the refined matter of a metallic org. compd. of Pb, La, Zr, Ti of a compsn. stoichiometrically corresponding to a desired compsn. and calcining the mu...
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JP05315182 |
PURPOSE: To obtain a highly reliable capacity device by eliminating cracks appearing on the surface of a ferroelectric thin film by casting light on them. CONSTITUTION: Cracks 14 appearing on the surface of a (BaxSr1-x)TiO3 film 13 forme...
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JP05308032 |
PURPOSE: To provide a ferroelectric thin film capacitor which is improved in various kinds of characteristics and its manufacturing method by using an aluminum thin film which has excellent processability and is low in film forming cost ...
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JP05299293 |
PURPOSE: To obtain a position detecting device which is subminiature, high in resolution and accuracy, and of non-contact type. CONSTITUTION: A movable plate-like ferroelectric body 1 is introduced in between an upper and a lower fixed p...
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JP05283286 |
PURPOSE: To obtain a capacity device whose reliability is high by a method wherein a surplus substance which has been precipitated on the surface of a ferroelectric thin film is removed after it has been irradiated with light. CONSTITUTI...
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JP05253415 |
PURPOSE: To produce an electret filter having excellent in collecting efficiency at high yield. CONSTITUTION: A production method for the electret filter has processes to form a planer fibrillated fiber bundled body 1 by fibrillating a p...
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JP05253416 |
PURPOSE: To obtain a filter excellent in collecting efficiency by applying direct voltage to a polymer fiber bundled body on one side of the surface of which a polymer film is superposed and applying voltage having inverse polarity again...
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JP05253417 |
PURPOSE: To efficiently obtain a material made electret excellent in the holding property of surface charge by allowing a worked material to be made electret into contact with a insulating body preliminary made electret. CONSTITUTION: Th...
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JP05246722 |
PURPOSE: To form a ferroelectric layer by making an organic solvent solution contain Bi and Ti in the shape of metal organic or inorganic compounds in a stoichiometric ratio, bringinging the uniformly mixed organic solvent solution into ...
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JP05243088 |
PURPOSE: To obtain a capacitor device which is capable of forming a ferroelectric thin film having a good crystallinity as a capacitor insulation film by raising and dropping the temperature dramatically by scanning an energy beam or pro...
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JP05234809 |
PURPOSE: To prevent reaction of an electrode with an Si material and improve adhesion with the material by employing perovskite-type oxide having conductivity for the electrode in a capacitor composed of an electrode and a perovskite- ty...
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JP05234443 |
PURPOSE: To form a ferroelectric film, which contains Pb such as PZT (PbZrxTi1-xO3), PLZT (Pb1-xLax) (ZryTi1-y)1-x/4O3), etc. in its composition, in the condition that the film quality is good. CONSTITUTION: A film, which has the specifi...
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JP05229827 |
PURPOSE: To obtain a ferroelectric film having improved film quality by depositing a film of a Pb-containing composition on a substrate and heating with a lamp at a prescribed temperature, thereby converting the deposited film to a perov...
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JP05226187 |
PURPOSE: To increase an electric effect to an external field and to obtain electric absorption effect for dusts, fine particles, bacteria, etc., by increasing a difference of surface charge densities of front and rear surfaces. CONSTITUT...
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JP05217802 |
PURPOSE: To facilitate molding by a method wherein a molded body is formed by using a polymer electret which is formed by electrifying poly-α-olefin composed mainly of a syndiotactic structure. CONSTITUTION: The title electret is a poly...
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JP05190389 |
PURPOSE: To provide an antibacterial electret material which possesses both an antibacterial characteristic and the characteristic of an electret, and is also stabilized in electric charge. CONSTITUTION: An antibacterial electret materia...
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JP05182857 |
PURPOSE: To provide a thin film capacitor in which a polarizing direction of a ferroelectric film is inverted to be switched to vary a switching time in the capacitor using the film. CONSTITUTION: The thin film capacitor comprises a firs...
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JP05159623 |
PURPOSE: To provide the amorphous (amorphous) ferroelectric material, which can be used for a thin film-type capacitor element, a ferroelectric memory and an electro-optical device or the like, and the manufacture thereof. CONSTITUTION: ...
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JP05155619 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155617 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155620 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155618 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05151823 |
PURPOSE: To provide amorphous ferroelectric material and the manufacture thereof which are applied to thin film capacitor elemant, a ferroelectric memory, an elector-optic device and the like. CONSTITUTION: This is composed of ternary ox...
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JP05147939 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, aluminum oxide and a Gd2(Mo4)3 type compd. on a substrate at a prescribe...
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JP05147938 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, silicon oxide and a Pb5Ge3O11 type compd. on a substrate at a prescribed...
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JP05147935 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, aluminum oxide and a pyrochlore type compd. on a substrate at a prescrib...
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JP05147933 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, bismuth oxide and a pyrochlore type compd. on a substrate at a prescribe...
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JP05147927 |
PURPOSE: To form a ferroelectric oxide by converting the oxide of transition metal, B2O3 and a pyrochlore type compd. into a ternary oxide having a specified ratio in the compsn. and amorphous structure. CONSTITUTION: Powder of the oxide...
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JP05147937 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, antimony oxide and a Pb5Ge3O11 type compd. on a substrate at a prescribe...
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JP05147936 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, antimony oxide and a pyrochlore type compd. on a substrate at a prescrib...
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JP05147940 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, boron oxide and a Gd2(Mo4)3 type compd. on a substrate at a prescribed t...
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JP05147934 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, germanium oxide and a pyrochlore type compd. on a substrate at a prescri...
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JP05147972 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc., and a method for producing the same. CONSTITUTION: This amorphous ferroelec...
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JP05139729 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139731 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139730 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139733 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139732 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139734 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05135999 |
PURPOSE: To enable a capacitor different in coercive resistant electric field of a ferroelectric film or capacity to be made in a short time according to the request of a user, and enable even the ferroelectric film capacitor high in coe...
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JP05135622 |
PURPOSE: To provide a noncrystal (amorphous) ferroelectric substance material applicable to a thin-film type capacitor element and a manufacturing method thereof. CONSTITUTION: The amorphous ferroelectric substance oxide material is made...
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JP05132317 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132313 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132316 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132312 |
PURPOSE: To produce an amorphous ferroelectric material applicable for thin film type condenser element, ferroelectric memory, electro-optical device, etc. CONSTITUTION: An amorphous ferroelectric material comprising a ternary oxide cons...
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