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Patent Searching and Data


Matches 551 - 600 out of 2,100

Document Document Title
JP2005140779A
To prevent contamination of electrical noises in a conditional electronic circuit of a capacitive fluid pressure detective transducer.The capacitive fluid pressure detective transducer (10') has a detection element (12) provided in a cap...  
JP2005136607A
To provide a variable resonant circuit in which waveform distortion and inter-modulation distortion are small and which is superior in electric power resistance and has low loss.The variable resonant circuit R has an impedance element an...  
JP2005136074A
To provide a capacitor which can obtain a required capacitance value with high precision and is excellent in response in a high frequency region.The lower surface of a dielectric layer 5 is smaller than the upper surface of a lower elect...  
JP2005108887A
To provide a variable capacitor which is capable of restraining its Q-value from decreasing, due to the application of a voltage at a desired frequency, and to provide a variable filter which can be reduced in insertion loss and phase ch...  
JP2005079168A
To provide a variable capacitor which exhibits the small rate of a capacitance change caused by high-frequency signals even when the rate of a capacitance change caused by a DC bias voltage is set large, shows a small intermodulation dis...  
JP2005508096A  
JP2005064437A
To provide a variable capacitor wherein a bias signal is applied stably to a varactor, miniaturization is realized, handling is easy, waveform distortion, intermodulation distortion, etc. are small, electric power resistance is also supe...  
JP2005050865A
To provide a capacitor device which can restrain higher harmonic which is generated when a high frequency signal is inputted into a variable capacitor.In the capacitor device, a first variable capacitor C1, and a second variable capacito...  
JP2005503013A  
JP3638160B2
PURPOSE: To provide an electret that has a high melting point and can be introduced to a semiconductor manufacturing process for easily achieving fine machining and thinning. CONSTITUTION: An SiO2 film 1 has a band structure consisting o...  
JP2005502186A  
JP2005502227A  
JP3603610B2  
JP2004354199A
To provide a multivariate detection sensor capable of detecting the multivariate with a single detector, having a simple structure, and to provide a method for identifying a plurality of physical quantities for identifying the objective ...  
JP3596268B2  
JP3596266B2  
JP2004536287A  
JP2004327868A
To provide a capacity variable thin film capacitor element which enlarges a usable frequency range and restrains characteristic defect and deterioration of reliability, and a high frequency component using it.First to Nth variable capaci...  
JP2004327983A
To provide a multilayer electronic component for a plated termination for a multilayer electronic component, for example, for a capacitor, for a resistor, for an inductor, or for an integrated passive element.In a plated termination, a p...  
JP2004309280A
To provide a capacitive detection type oscillation gyroscope in which the power supply dependent accuracy of a detection signal against the variation in the power supply voltage is improved.A capacitive detection circuit 3 is provided fo...  
JP2004312023A
To provide a termination feature for a multilayer electronic component.The plated termination in question is guided and fixed by an exposed internal electrode tab that can be selectively extended on a cover layer of the multilayer compon...  
JP3577041B2  
JP2004530360A  
JP2004530359A  
JP3599558B2
To provide the manufacturing method of a variable-capacitance element for high frequency at a low cost that can be readily formed on a ceramic substance, of which capacitance changes greatly at low voltage, and of which the capacitor cha...  
JP3599528B2
To provide a variable capacitance element the capacitance of which can be changed largely under a low voltage by successively providing a lower electrode, a thin dielectric film, and an upper electrode on a substrate, with the thin diele...  
JP2004529558A  
JP2004259993A
To provide a variable capacitance thin film capacitor with a small capacitance change by a high frequency signal and a large capacitance change by a DC bias, and to provide a high frequency component utilizing the variable capacitance th...  
JP2004527914A  
JP2004526379A  
JP2004241439A
To provide a variable capacitance thin film capacitor which changes little in capacitance with high-frequency signals, varies much in capacitance with a DC bias, is protected against disconnection, and is restrained from deteriorating it...  
JP2004241440A
To provide a variable capacitance thin film capacitor which changes little in capacitance with high-frequency signals, varies much in capacitance with a DC bias, and is small in size, and to provide a high-frequency component using the s...  
JP2004235362A
To provide a method of adjusting the capacity of a varactor with improved waveform distortion and cross-modulation distortion, a method of adjusting the resonance frequency of a resonance circuit, and a method of adjusting the band of a ...  
JP2004235577A
To provide a voltage-controlled variable capacitative element which can be manufactured without changing existing manufacturing process or adding any new process, and does not enlarge the circuit size nor require higher voltage, and in w...  
JP3554779B2  
JP3554778B2  
JP2004524770A  
JP2004223708A
To provide a structure including a mesh type metal layer flexibly suspended in the air using CMOS process technology and a process to make such structure.A base sacrifice layer 14, a first metal layer 16, a first sacrifice layer 20, a se...  
JP2004524778A  
JP3551746B2  
JP2004214408A
To provide a voltage controlled variable capacitor that can be its manufactured without changing the conventional manufacture process, or adding any new process, preventing the circuit from being largely scaled or integrated into a high ...  
JP2004207622A
To provide a variable-capacity capacitor and a high-frequency component which are excellent in their power resistances, by giving to the capacitor a capacitor forming region whose shape reduces the concentration of the electric field app...  
JP2004207630A
To provide a variable thin film capacitor and a radio frequency component which are small in the change of capacity caused by a radio frequency signal, are large in the change of the capacity caused by a D.C. bias, maintain its component...  
JP2004186625A
To provide a method for conditioning capacity which has no use for providing a protective film after conditioning the capacity, and to provide a trimmer capacitor suitable for it.Related to the method for conditioning the capacity of a c...  
JP2004179563A
To provide a variable capacity thin-film capacitor which can suppress a capacity variation caused by a radio frequency signal, enhance a capacity variation caused by D.C. bias, decrease the number of thin film layers sequentially coated,...  
JP2004172411A
To provide a variable capacitance element wherein parasitic resistance among variable capacitance elements formed on a silicon IC is reduced.The variable capacitance element is provided with a conductive buried electrode layer 102 of dif...  
JP2004172248A
To prevent an exfoliation between an internal conductor and a ceramic even when the internal conductor is formed by a thin film forming method and a dielectric layer is thinned.A conductive film is formed on a film by a thin film forming...  
JP2004165596A
To provide a composition for a thin film capacitive element, having superior leakage property, improved breakdown voltage and superior surface smoothness, in which temperature coefficient of a dielectric thin film, etc. is controlled at ...  
JP2004165588A
To provide a capacity variable capacitor circuit and a capacity variable thin film capacitor element where capacity change due to a high frequency signal is small, and capacity change due to DC bias is large and high frequency components...  
JP3532207B2  

Matches 551 - 600 out of 2,100