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JP05226187 |
PURPOSE: To increase an electric effect to an external field and to obtain electric absorption effect for dusts, fine particles, bacteria, etc., by increasing a difference of surface charge densities of front and rear surfaces. CONSTITUT...
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JP05217802 |
PURPOSE: To facilitate molding by a method wherein a molded body is formed by using a polymer electret which is formed by electrifying poly-α-olefin composed mainly of a syndiotactic structure. CONSTITUTION: The title electret is a poly...
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JP05190389 |
PURPOSE: To provide an antibacterial electret material which possesses both an antibacterial characteristic and the characteristic of an electret, and is also stabilized in electric charge. CONSTITUTION: An antibacterial electret materia...
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JP05182857 |
PURPOSE: To provide a thin film capacitor in which a polarizing direction of a ferroelectric film is inverted to be switched to vary a switching time in the capacitor using the film. CONSTITUTION: The thin film capacitor comprises a firs...
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JP05159623 |
PURPOSE: To provide the amorphous (amorphous) ferroelectric material, which can be used for a thin film-type capacitor element, a ferroelectric memory and an electro-optical device or the like, and the manufacture thereof. CONSTITUTION: ...
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JP05155619 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155617 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155620 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05155618 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This ferroelectric oxide material is made of a ternary oxide h...
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JP05151823 |
PURPOSE: To provide amorphous ferroelectric material and the manufacture thereof which are applied to thin film capacitor elemant, a ferroelectric memory, an elector-optic device and the like. CONSTITUTION: This is composed of ternary ox...
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JP05147939 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, aluminum oxide and a Gd2(Mo4)3 type compd. on a substrate at a prescribe...
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JP05147938 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, silicon oxide and a Pb5Ge3O11 type compd. on a substrate at a prescribed...
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JP05147935 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, aluminum oxide and a pyrochlore type compd. on a substrate at a prescrib...
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JP05147933 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, bismuth oxide and a pyrochlore type compd. on a substrate at a prescribe...
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JP05147927 |
PURPOSE: To form a ferroelectric oxide by converting the oxide of transition metal, B2O3 and a pyrochlore type compd. into a ternary oxide having a specified ratio in the compsn. and amorphous structure. CONSTITUTION: Powder of the oxide...
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JP05147937 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, antimony oxide and a Pb5Ge3O11 type compd. on a substrate at a prescribe...
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JP05147936 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, antimony oxide and a pyrochlore type compd. on a substrate at a prescrib...
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JP05147940 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, boron oxide and a Gd2(Mo4)3 type compd. on a substrate at a prescribed t...
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JP05147934 |
PURPOSE: To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, germanium oxide and a pyrochlore type compd. on a substrate at a prescri...
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JP05147972 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc., and a method for producing the same. CONSTITUTION: This amorphous ferroelec...
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JP05139729 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139731 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139730 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139733 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139732 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05139734 |
PURPOSE: To produce an amorphous ferroelectric material applicable to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc. CONSTITUTION: This amorphous ferroelectric oxide material is made of a terna...
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JP05135999 |
PURPOSE: To enable a capacitor different in coercive resistant electric field of a ferroelectric film or capacity to be made in a short time according to the request of a user, and enable even the ferroelectric film capacitor high in coe...
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JP05135622 |
PURPOSE: To provide a noncrystal (amorphous) ferroelectric substance material applicable to a thin-film type capacitor element and a manufacturing method thereof. CONSTITUTION: The amorphous ferroelectric substance oxide material is made...
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JP05132317 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132313 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132316 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132312 |
PURPOSE: To produce an amorphous ferroelectric material applicable for thin film type condenser element, ferroelectric memory, electro-optical device, etc. CONSTITUTION: An amorphous ferroelectric material comprising a ternary oxide cons...
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JP05132314 |
PURPOSE: To provide an amorphous ferroelectric material applicable to a thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material con...
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JP05132315 |
PURPOSE: To provide an amorphous ferroelectric material applicable to thin film type condenser element, ferroelectric memory, electrooptical device, etc., and its production. CONSTITUTION: The objective ferroelectric oxide material consi...
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JP05129156 |
PURPOSE: To form a plurality of ferroelectric capacitors connected in series or parallel on a semiconductor substrate easily. CONSTITUTION: A silicon oxide film 102 is made as an insulating film on a silicon substrate 100, and a lower el...
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JP05114309 |
PURPOSE: To provide an amorphous ferroelectric oxide material which can be applied to a membranous capacitor element, a ferroelectrics memory, an electro-optical device, and the like, and its manufacturing method. CONSTITUTION: This amor...
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JP05109585 |
PURPOSE: To provide an amorphous ferroelectric material which can be applied to a thin film type capacitor element, a ferroelectric memory, an electrooptical device, etc., and a method for manufacturing the same. CONSTITUTION: The amorph...
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JP05109315 |
PURPOSE: To provide amorphous ferroelectric material and its manufacture being applicable to thin film type capacitor elements, ferroelectric memories, electro-optical devices, and the like. CONSTITUTION: Amorphous ferroelectric oxide ma...
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JP05105436 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-Bi2O3-tungsten bronze type compound and forming a thin film having a specified compsn. on a substrate at a prescribed temp. or b...
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JP05105439 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-GeO2-tungsten bronze type compound and forming a thin film having a specified compsn. on a substrate at a prescribed temp. or be...
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JP05105446 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-GeO2- an SrTeO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a...
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JP05105433 |
PURPOSE: To realize ferroelectricity by using a ternary oxide essentially consisting of transition metal oxide-Bi2O3-SrTeO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a ...
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JP05105440 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-Sb2O3-a tungsten bronze type compound and forming a thin film having a specified compsn. on a substrate at a prescribed temp. or...
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JP05105437 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-Al2O3-tungsten bronze type compound and forming a thin film having a specified compsn. on a substrate at a prescribed temp. or b...
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JP05105435 |
PURPOSE: To realize ferroelectricity by using thernary oxide essentially consisting of transition metalSb2O3-SrTeO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a prescrib...
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JP05105429 |
PURPOSE: To realize ferroelectricity by using a ternary oxide essentially consisting of transition metallic oxide-P2O5-YMnO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a...
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JP05105438 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-P2O5-tungsten bronze type compound and forming a thin film having a specified compsn. on a substrate at a prescribed temp. or be...
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JP05105431 |
PURPOSE: To realize ferroelectricity by using a ternary oxide essentially consisting of transition metallic oxide-Sb2O3-YMnO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at ...
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JP05105432 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metallic oxide-Al2O3-SrTeO3 type compound and forming a thin film with an armophous structure having a specified compsn. on a substrate at a...
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JP05105434 |
PURPOSE: To realize ferroelectricity by using ternary oxide essentially consisting of transition metal oxide-P2O5-SrTeO3 type compound and forming a thin film with an amorphous structure having a specified compsn. on a substrate at a pre...
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