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JP2011044705A |
To rapidly, inexpensively and easily grow an epitaxial thin film on a textured substrate.By using a combustion chemical vapor deposition method (CCVD) or the like, a perovskite type dielectric layer is formed on a textured substrate. A p...
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JP2011040581A |
To provide a higher performance laminated capacitance element by more reducing an electrode resistance thereof.The capacitance element 10 includes a first electrode 21, a second electrode 22, a third electrode 23, a fourth electrode 24, ...
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JP4634459B2 |
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JP4638232B2 |
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JP4627676B2 |
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JP4622518B2 |
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JP4613954B2 |
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JP2011009446A |
To improve both the reliability of a MEMS element and the characteristics of a MIM element.The MEMS device includes: the MEMS element 10, including a first lower electrode 12 provided on a substrate 1, a first insulator 20 which is provi...
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JP2011003669A |
To provide a variable capacitor of a small capacity.The variable capacitor includes: a first internal electrode which has a first pull-out part where an opening is formed, parts on both sides of the opening are extended in the long side ...
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JP4602494B2 |
A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of mak...
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JP2010279024A |
To provide an electret material with superior electric charge retaining properties against heat.The electret material 10 has an electrode plate 1, a semiconductor layer 2 formed on the electrode plate 1, and an electret layer 3 formed on...
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JP2010267883A |
To provide a device for manufacturing an electret capacitor capable of preventing discharge of charge of an electret in a manufacturing process.This device 100 for manufacturing an electret capacitor includes an ionization radiation irra...
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JP2010267884A |
To provide a method and a device for manufacturing an electret that can shorten a time needed to manufacture the electret.The device 100 for manufacturing the electret includes: an upper chamber 101 into which a helium gas is injected; a...
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JP2010268445A |
To provide a manufacturing method capable of providing an electret material having an excellent charge-retentive property with respect to heat.The method for manufacturing an electret material includes: an irradiation step, a formation s...
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JP4584527B2 |
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JP4580745B2 |
A piezoelectric driving type MEMS apparatus includes: a supporting portion provided on a substrate; and a piezoelectric actuator, which is supported on the supporting portion, including a piezoelectric film and a driving electrode config...
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JP2010258402A |
To stably manufacture a capacitance element that suppresses capacitance variation due to misalignment of electrodes that face each other across a dielectric layer so as to have a desired capacitance.The capacitance element is provided wi...
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JP2010258562A |
To provide a method for manufacturing an electret material which improves the adhesion between a resin layer to be an electret layer and an electrode plate.The method for manufacturing an electret material includes: applying dispersing l...
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JP2010251426A |
To provide a varactor element having sensitivity of a control electric field between control terminals, the sensitivity capable of being set without reference to breakdown voltage resistance to a signal voltage, and to provide an electro...
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JP4567643B2 |
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JP4566012B2 |
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JP2010225611A |
To provide a low-cost variable capacitor component having a coupling capacitor and variable capacitor with a less layer structure without using a varicap diode.The variable capacitor component includes an insulating substrate 11, a pair ...
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JP4548466B2 |
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JP4534988B2 |
A displacement element having a beam in a state of being supported at its opposite ends and having the excellent controllability of an absolute position in an initial state. In the beam (12) formed such that a plurality of functional mat...
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JP4535046B2 |
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JP4528943B2 |
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JP4528461B2 |
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JP2010177278A |
To provide a variable capacitance element which operates even at high temperature.The variable capacitance element has a diamond semiconductor 2, a first metal electrode 3, a first insulating film 4, and a second metal electrode 5, forme...
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JP2010165926A |
To provide a method of manufacturing an electret of high charge holding rate having a thin PTFE film. This method of manufacturing the electret includes a bonding process for bonding the PTFE film 12 onto a metal plate 11, and a heating ...
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JP4515031B2 |
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JP4514782B2 |
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JP4502609B2 |
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JP4496091B2 |
A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoe...
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JP4498836B2 |
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JP4493368B2 |
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JP4493405B2 |
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JP2010136598A |
To provide an electrostatic induction type energy conversion element capable of charging a large quantity of charges to an electret. A plurality of rectangular base electrodes 27 are arrayed in parallel on the top face of a fixed board 2...
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JP2010109035A |
To provide a variable capacitor which reduces loss in conductivity as a component formed by combining a capacitor for cutting low frequency signal and a variable capacitor.The variable capacitor includes (a) a pair of electrode layers 22...
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JP4462723B2 |
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JP2010089496A |
To provide an electret having an electro-conductive layer which minimizes the performance decline of the electret when the electret having the electro-conductive layer as a material for an electricity and electron input-output device is ...
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JP2010089494A |
To provide an electret-converted film (ii) which can stably maintain a high-charged state over a long period of time by using a porous resin film (i) having high insulation resistance and adding charge therein.The electret-converted film...
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JP4452444B2 |
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JP4449574B2 |
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JP4437232B2 |
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JP4440470B2 |
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JP4439673B2 |
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JP4425688B2 |
A method of forming electroless plated terminations 78 for electronic components 74, the method comprises steps of: providing a plurality of electronic components, each component includes a plurality of ceramic substrate layers selective...
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JP4419551B2 |
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JP4419563B2 |
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JP4412977B2 |
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