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Patent Searching and Data


Matches 401 - 450 out of 853

Document Document Title
JP3599528
To provide a variable capacitance element the capacitance of which can be changed largely under a low voltage by successively providing a lower electrode, a thin dielectric film, and an upper electrode on a substrate, with the thin diele...  
JP2004259993
To provide a variable capacitance thin film capacitor with a small capacitance change by a high frequency signal and a large capacitance change by a DC bias, and to provide a high frequency component utilizing the variable capacitance th...  
JP2004241439
To provide a variable capacitance thin film capacitor which changes little in capacitance with high-frequency signals, varies much in capacitance with a DC bias, is protected against disconnection, and is restrained from deteriorating it...  
JP2004241440
To provide a variable capacitance thin film capacitor which changes little in capacitance with high-frequency signals, varies much in capacitance with a DC bias, and is small in size, and to provide a high-frequency component using the s...  
JP2004235362
To provide a method of adjusting the capacity of a varactor with improved waveform distortion and cross-modulation distortion, a method of adjusting the resonance frequency of a resonance circuit, and a method of adjusting the band of a ...  
JP2004235577
To provide a voltage-controlled variable capacitative element which can be manufactured without changing existing manufacturing process or adding any new process, and does not enlarge the circuit size nor require higher voltage, and in w...  
JP2004223708
To provide a structure including a mesh type metal layer flexibly suspended in the air using CMOS process technology and a process to make such structure.A base sacrifice layer 14, a first metal layer 16, a first sacrifice layer 20, a se...  
JP2004214408
To provide a voltage controlled variable capacitor that can be its manufactured without changing the conventional manufacture process, or adding any new process, preventing the circuit from being largely scaled or integrated into a high ...  
JP2004207622
To provide a variable-capacity capacitor and a high-frequency component which are excellent in their power resistances, by giving to the capacitor a capacitor forming region whose shape reduces the concentration of the electric field app...  
JP2004207630
To provide a variable thin film capacitor and a radio frequency component which are small in the change of capacity caused by a radio frequency signal, are large in the change of the capacity caused by a D.C. bias, maintain its component...  
JP2004186625
To provide a method for conditioning capacity which has no use for providing a protective film after conditioning the capacity, and to provide a trimmer capacitor suitable for it.Related to the method for conditioning the capacity of a c...  
JP2004179563
To provide a variable capacity thin-film capacitor which can suppress a capacity variation caused by a radio frequency signal, enhance a capacity variation caused by D.C. bias, decrease the number of thin film layers sequentially coated,...  
JP2004172411
To provide a variable capacitance element wherein parasitic resistance among variable capacitance elements formed on a silicon IC is reduced.The variable capacitance element is provided with a conductive buried electrode layer 102 of dif...  
JP2004172248
To prevent an exfoliation between an internal conductor and a ceramic even when the internal conductor is formed by a thin film forming method and a dielectric layer is thinned.A conductive film is formed on a film by a thin film forming...  
JP2004165596
To provide a composition for a thin film capacitive element, having superior leakage property, improved breakdown voltage and superior surface smoothness, in which temperature coefficient of a dielectric thin film, etc. is controlled at ...  
JP2004165588
To provide a capacity variable capacitor circuit and a capacity variable thin film capacitor element where capacity change due to a high frequency signal is small, and capacity change due to DC bias is large and high frequency components...  
JP2004128361
To provide a charging member which is excellent in adhesiveness between a substrate and a resin layer and whose adhesiveness does not deteriorate even if heat-treated.The charging member comprises a fluororesin layer (1), a heat resistan...  
JP3545923
To provide a capacity variable element which can be easily formed on a ceramic substrate at low costs, and which can be made compact in which large capacity change can be obtained with a low voltage, and capacitor characteristics can be ...  
JP3544839
To easily form a capacity variable element on a ceramic substrate at low cost by a method, wherein a dielectric film is formed by partially substituting the titanium element of barium titanate of a dielectric thin film with zirconium, ha...  
JP2004119892
To provide an easily treated variable capacitor apparatus a variable capacitor element of which can be stably supplied with a bias signal.The variable capacitor apparatus comprises a variable capacitor element C1 wherein a first electrod...  
JP2004074149
To provide an electret-improved filter medium manufactured from a fiber, for example, a meltblown superfine fiber.This electret filter medium contains a nonwoven web of thermoplastic, nonconductive microfibers having trapped charge. This...  
JP2004063949
To provide a thin-film circuit component with variable capacity for making an electronic component with the integrated thin-film circuit component inexpensively and small in height, by reducing the number of parts concerning the control ...  
JP2004040084
To provide a terminal feature for a multilayer electronic component.Electrode tabs 56 are projected from electrode layers 52 and 54 in the same plane as the layers in such a manner that the layers 52 and 54 are aligned in a row state. In...  
JP2004031408
To provide new capacitor elements capable of suitably adjusting the voltage dependence of capacitance, thin film lamination devices, and circuits and technology for manufacturing the capacitor elements and the thin film lamination device...  
JP2003332169
To provide a layered capacitor in which laminated layers are made flat and, which can largely reduce the size and increase the capacitance when the laminates are used for a capacitor.In a method of manufacturing the layered capacitor, re...  
JP3483285
PURPOSE: To provide a long-life SiO2 electret. CONSTITUTION: In the process for production of the electret in SiO2 including a first process of forming an SiO2 layer 10 on a solid substrate 5 by direct deposition in a vapor phase startin...  
JP2003294527
To solve the problem that the degree of freedom for wavelength selection of detectable light is low.In this film-shaped photosensor, a transparent optically- transmissible material, an upper layer electrode, a photosensitive dielectric l...  
JP2003282360
To configure an electret hard to discharge, even if it is used in an environment having a high humidity.A manufacturing method of the electret includes a process for forming a charged film 2, comprising an SiO2 film on a substrate 1 by a...  
JP2003261319
To provide a silicon-containing compound and a baked body thereof, which are stable even in air and from which an all solid storage element having a wide operation temperature range and high reliability can be obtained, and to provide a ...  
JP2003260319
To provide an electret filter medium which is high in surface charge density, is therefore high in capture efficiency and enables a biodegradation treatment and a method for manufacturing the same.The electret filter medium having the su...  
JP2003260317
To provide an electret filter medium which is high in surface charge density and is high in particle capture efficiency even after exposure to initial and high-temperature atmospheres and enables biodegradation treatment and a method for...  
JP3472087
To form a conductive thin film exhibiting a high surface flatness, which can control stress of a ferroelectric thin film, especially a PZT thin film exhibiting a high surface flatness and an enough selfpolarization which is to be formed ...  
JP2003234255
To provide a solid electrolytic capacitor utilizing the ionic conduction of an ion conductor.For manufacturing the solid electrolytic capacitor, a metal or a semiconductor which is easily oxidized and whose conductivity decreases by more...  
JP3460683
To provide a chip-type electronic component, having a glass coat layer resistant to crackings and a ceramic member whose insulation resistance is hard to degrade, and to provide a method of manufacturing the same. A laminate capacitor ha...  
JP2003209266
To provide a method for extremely enhancing an intrinsic permittivity of a dielectric crystal and to provide a method for controlling the permittivity of the dielectric crystal to a desired permittivity, a variable capacity having a smal...  
JP2003199197
To provide a multi-layer electret having ultra-high charge stability with excellent thermal resistance so as to attain a work by the surface mount technology and to provide a method of manufacturing thereof.The multi-layer electret is co...  
JP2003197467
To provide a variable capacitance capacitor, that is made to be mounted easily and surely on a mother board by making the formation of solder bumps easier, without compromising the electrical characteristics of the bumps and, in addition...  
JP2003124063
To provide a variable capacitance capacitor device which is reduced in parasitic inductance and capable of operating over a wide range of frequency band.This variable capacitance capacitor device is equipped with an insulating board 2 wh...  
JP2003109846
To provide a variable capacitance element where a leakage current is small, reliability is high, and variation of capacitance is large.In the variable capacitance element, a lower electrode 12, a dielectric film 13 whose dielectric const...  
JP2003068571
To provide a high frequency circuit module capable of easily adjusting deviation of impedance and coping even with multiple bands and multiple modes.Conductor plates 31, 32, 33 and 34 are formed by the conductor layers 26 and 28 of a mul...  
JP2003045748
To provide a tunable thin-film capacitor which has a high Q-value and is superior in reliability. This tunable thin-film capacitor comprises a lower electrode layer 2 formed on a substrate 1, a thin film dielectric layer 3 formed on the ...  
JP3383188
To simultaneously solve the problems on the adhesion of a pole material to a substrate and on the characteristic deterioration, such as fatigue, leakage current, etc., of a ferroelectric thin film capacitor by forming a conductive oxide/...  
JP2002345087
To provide an elecret condenser microphone where an insulation member is employed for a microphone part as well as a case part so as to enhance the processing accuracy and the assembling performance and furthermore to make the microphone...  
JP2002329640
To provide a variable capacitor that has an extremely small number of lattice defects in oxygen in the entire dielectric layer, and hence has an extremely small amount of dielectric loss, and to provide the manufacturing method of the va...  
JP2002329641
To provide a variable capacitor that has an extremely small number of lattice defects in oxygen in the entire dielectric layer, and hence has an extremely small amount of dielectric loss, and to provide the manufacturing method of the va...  
JP2002315097
To provide a method or manufacturing a pressure sensor and a semiconductor substrate used for the same, which can be thinned and miniaturized, while keeping high performance.Spacers 6 made of a polyimide on a semiconductor substrate 3 ha...  
JP2002299163
To provide a variable capacitance element, in which exfoliation of a thin-film dielectrics layer will not be generated and the resistance of a capacitance electrode layer can be made low easily, and durability is realized, when a compara...  
JP2002262395
To provide an outer container for an electret condenser microphone that downsizes the electret condenser microphone and enhances the reliability as a product by isolating the electret condenser microphone from a membrane ring placed in t...  
JP2002243690
To provide a capacitance type humidity sensor having superior reliability and being capable of being constituted of a material which can be manufactured by a normal semiconductor manufacturing line.The capacitance type humidity sensor is...  
JP2002217060
To provide a capacitor having a small amount of change in capacitance for the capacitor manufactured by the MEMS technique.This microcomponent has a capacitive component. The capacitive component is composed by the continuous coupling of...  

Matches 401 - 450 out of 853