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Matches 401 - 450 out of 2,219

Document Document Title
JP2012120388A
To provide an electrostatic induction type conversion device having high mechanical-electrical conversion efficiency.The electrostatic induction type conversion device 1, to convert electrical energy and kinetic energy, comprises: a base...  
JP4953877B2
The invention relates to reducing the leakage current and insulation breakdown in a dielectric film stepped portion caused by a surface roughness of a dielectric film, and to enhancing insulation of a variable capacitor. A lower electrod...  
JP4940890B2  
JP4921325B2  
JP4913778B2  
JP4915130B2  
JP2012069580A
To provide dielectric ceramic for tunable devices which has large variation of a relative dielectric constant for dc bias electric fields, small temperature dependence of the relative dielectric constant, and small dielectric loss in a w...  
JP4907266B2  
JP2012060030A
To stably manufacture electrostatic capacitive elements having different capacitance without changing the shape of an electrode and the number of stacking of the electrodes.The electrostatic capacitive element comprises a dielectric laye...  
JP4888418B2  
JP4880878B2
The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating dev...  
JP2012503872A  
JP4873007B2  
JP2012502493A  
JP4861790B2  
JP2012009929A
To solve the problem that accuracy is low in a capacity value concerning a conventional variable capacity element.A variable capacity element of the present invention includes: a first capacity element C1 connected between a first power ...  
JP2011249722A
To provide an electret manufacturing apparatus and an electret manufacturing method capable of manufacturing the homogeneous electrets excellent in maintainability with no deterioration of electrodes.The electret manufacturing apparatus ...  
JP4810661B2  
JP4812765B2  
JP2011211029A
To reduce the size of a variable capacitive element using a ferroelectric substance that can attain expansion of a variable region of electrostatic capacity, while at the same time, maintaining a high Q-value.The variable capacitive elem...  
JP4798870B2  
JP4766956B2  
JP4763358B2  
JP4753609B2  
JP4749052B2  
JP4743222B2  
JP4731515B2  
JP2011138544A
To provide a variable capacity element having a simpler configuration and excellent resistance to received voltage.The variable capacity element includes a ferroelectric layer made of ferroelectric material, and two electrodes provided t...  
JP2011119482A
To further widen the flexibility of design of an internal electrode, a capacitance value, and so on, facilitate manufacturing, and suppress the influence of the parasitic capacitance, in a variable capacitance device configured by connec...  
JP2011101041A
To provide a variable capacitance element having a structure such that electric field sensitivity to a control voltage can be set irrelevantly to a breakdown voltage for a signal voltage, and an electronic apparatus.The variable capacita...  
JP2011086924A
To provide an energy conversion film having a high ability to convert energy, wherein a porous resin film having a high expansion ratio is obtained by forming a thermoplastic resin stretched film having a specific structure even without ...  
JP4671664B2  
JP2011073960A
To provide a method for forming a dielectric thin film capable of expressing high tunability when used for a thin film capacitor and the like, and a thin film capacitor and a tunable device comprising a dielectric thin film obtained by t...  
JP4666564B2  
JP2011060830A
To provide a film having permittivity which can be controlled by external stimulation and can be varied by light irradiation, and to provide an electronic device using the same.A thin film transistor 20 includes a glass substrate 21, a g...  
JP4651355B2  
JP4649451B2  
JP2011044705A
To rapidly, inexpensively and easily grow an epitaxial thin film on a textured substrate.By using a combustion chemical vapor deposition method (CCVD) or the like, a perovskite type dielectric layer is formed on a textured substrate. A p...  
JP2011040581A
To provide a higher performance laminated capacitance element by more reducing an electrode resistance thereof.The capacitance element 10 includes a first electrode 21, a second electrode 22, a third electrode 23, a fourth electrode 24, ...  
JP4634459B2  
JP4638232B2  
JP4627676B2  
JP4622518B2  
JP4613954B2  
JP2011009446A
To improve both the reliability of a MEMS element and the characteristics of a MIM element.The MEMS device includes: the MEMS element 10, including a first lower electrode 12 provided on a substrate 1, a first insulator 20 which is provi...  
JP2011003669A
To provide a variable capacitor of a small capacity.The variable capacitor includes: a first internal electrode which has a first pull-out part where an opening is formed, parts on both sides of the opening are extended in the long side ...  
JP4602494B2
A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of mak...  
JP2010279024A
To provide an electret material with superior electric charge retaining properties against heat.The electret material 10 has an electrode plate 1, a semiconductor layer 2 formed on the electrode plate 1, and an electret layer 3 formed on...  
JP2010267883A
To provide a device for manufacturing an electret capacitor capable of preventing discharge of charge of an electret in a manufacturing process.This device 100 for manufacturing an electret capacitor includes an ionization radiation irra...  
JP2010267884A
To provide a method and a device for manufacturing an electret that can shorten a time needed to manufacture the electret.The device 100 for manufacturing the electret includes: an upper chamber 101 into which a helium gas is injected; a...  

Matches 401 - 450 out of 2,219