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JP5621616B2 |
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JP2014203844A |
To provide a MEMS device having excellent characteristics in a variable capacitance capacitor, a switch or the like.A MEMS device includes: a first electrode 21 provided on a support substrate 10; a second electrode 22 disposed to face t...
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JP2014184536A |
To provide an electric component including an MEMS device having a structure with desired characteristics.An electric component as an embodiment includes a substrate and an MEMS device provided on the circuit board. The MEMS device inclu...
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JP5598653B2 |
There is provided a contact switch including: a plurality of first contact points arranged in parallel on a substrate; a movable member including a plurality of beams facing the plurality of first contact points, and formed to be slidabl...
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JP2014175157A |
To provide a high frequency switch suitable for differential transmission.Each SPDT switch 101, 102, including an input terminal 50 for receiving a signal and two output terminals 51, 52 for outputting the signal input to the input termi...
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JP5588663B2 |
A micro electro-mechanical system switch having an electrical pathway is presented. The switch includes a first portion and a second portion. The second portion is offset to a zero overlap position with respect to the first portion when ...
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JP5579118B2 |
An apparatus includes a mechanical switch. The mechanical switch includes a bilayer with first and second stable curved states. A transformation of the bilayer from the first state to the second state closes the switch.
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JP5563057B2 |
The MEMS structure comprises: - a flexible membrane (6), which has a main longitudinal axis (6a) defining a longitudinal direction (X), - at least one pillar (3, 3') under the flexible membrane (6), - electric lowering actuation means (7...
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JP5558896B2 |
Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and ...
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JP2014130767A |
To provide an electrostatic microrelay in which the characteristics are enhanced at higher frequencies, and to provide a manufacturing method therefor.An electrostatic microrelay 101 includes a signal line consisting of signal lines 11, ...
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JP5531663B2 |
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JP5530624B2 |
In accordance with one aspect of the present invention, a MEMS switch 10,30,40 is provided. The MEMS switch 10,30,40 includes a substrate 12, a first 21,41 and a second 22,42 actuating element electrically coupled together, an anchor 18 ...
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JP5519402B2 |
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JP5494038B2 |
An electronic device includes a substrate, a stationary electrode provided above the substrate, a movable electrode that is provided to face the stationary electrode, a wall portion that is provided on the substrate and surrounds the mov...
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JP5483574B2 |
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JP5478060B2 |
A MEMS switch (20, 30, 40) is provided including a substrate (28), a movable actuator (22, 32, 132) coupled to the substrate (28) and having a first side and a second side, a first fixed electrode (24) coupled to the substrate (28) and p...
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JP5470767B2 |
A method for manufacturing a micro movable element includes: forming a movable section, a frame, and a connecting section connecting the movable section with the frame on a substrate; bonding a film to a surface of the substrate in formi...
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JP5475487B2 |
A micro-mechanical element includes a discrete switching element and a switching means for applying force to the switching element to move the switching element between two stable positions.
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JP5471640B2 |
A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate and includes a slit to delimit ...
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JP5466579B2 |
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JP5449756B2 |
A MEMS switch 30, 50, 60, 70, 80 includes a substrate 32, a movable actuator 53, 63, 83 coupled to the substrate 32, a substrate contact 35, 85 , a substrate electrode 36, 56, 86, and a conductive stopper 39 59, 69, 79 electrically coupl...
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JP5407334B2 |
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JP5410616B2 |
Integrated circuits with configurable multi-gate switch circuitry are provided. The switch circuitry may include switch control circuitry and an array of multi-gate switches. Each multi-gate switch may have first and second terminals, fi...
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JP5402355B2 |
A shunt switch allowed to improve isolation, a semiconductor device, a module and an electronic device each of which includes the shunt switch are provided. The shunt switch includes: a transmission line, a ground; and a shunt line elect...
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JP5398411B2 |
A micro movable device according to an embodiment of the present invention may include a signal line formed on a support substrate, a ground line formed on the support substrate and arranged side by side with the signal line, a first dri...
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JP2014003036A |
To provide a configurable multi-gate switch circuitry.Integrated circuits with configurable multi-gate switch circuitry are provided. The switch circuitry includes switch control circuitry and an array of multi-gate switches. Each multi-...
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JP2013255975A |
To provide a highly reliable and excellent electronic device.An electric device includes: a fixed electrode 14 fixed to a substrate 10; a movable electrode 24 formed above the substrate, with a central part thereof opposed to the fixed e...
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JP5333182B2 |
An electronic device includes a substrate including an active layer, a signal electrode formed on a surface of the active layer, a first driving electrode that is formed on the surface of the active layer and is connected to a ground, an...
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JP5330335B2 |
A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed betw...
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JP5318135B2 |
According to one embodiment, an electrostatic actuator includes a substrate, an electrode unit, a film body unit, and an urging unit. The electrode unit is provided on the substrate. The film body unit is provided to oppose the electrode...
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JP5301682B2 |
Disclosed is an MEMS switch capable of adjusting characteristic impedance to offset characteristic impedance disruption that may arise when in use. An MEMS switch (SD10) comprises a first tunable capacitor (CA11) disposed corresponding t...
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JP2013178967A |
To manufacture a microswitching element having a peeling electrode without increasing a manufacturing process.A method of manufacturing the microswitching element comprises the steps of: forming a first driving electrode 21, a movable el...
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JP5276178B2 |
According to one embodiment, a switch device includes a first switching unit provided on a base substance. The first switching unit includes a first supporting electrode, a first beam, a first contact point electrode, a first floating co...
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JP5263203B2 |
In an electrostatic relay (31,101,111) in which a moving contact (56) and a movable electrode are displaced in parallel with a base substrate(32), an opening force is increased when the movable electrode is separated from a fixed electro...
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JP5257383B2 |
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JP5259188B2 |
A MEM device has a movable element (30), a pair of electrodes (e1, e2) to move the movable element, one electrode having an independently movable section (e3), resiliently coupled to the rest of the respective electrode to provide additi...
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JP5254785B2 |
A Micro-Electro-Mechanical system (MEMS) device includes a doped semiconductor layer that is disposed outwardly from a substrate. The MEMS device further includes an insulation layer that is disposed outwardly from and in contact with th...
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JP5249159B2 |
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JP5230385B2 |
A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electri...
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JP5227566B2 |
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JP2013114935A |
To solve the problem in which, for a MEMS switch, increasing a spring constant of "a spring" for supporting a movable structure is effective means for enhancing its characteristics, especially for enhancing long-term reliability and a sw...
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JP5202236B2 |
An object is that contact between an upper switch electrode and a lower switch electrode is not hindered. The present invention relates to a MEMS switch including a substrate; a structural layer with a beam structure in which at least on...
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JP2013090442A |
To provide an electrostatic drive type actuator and a variable capacitance element capable of suppressing occurrence of a sticking phenomenon, and a method of manufacturing the same with high yield and high form accuracy.In a variable ca...
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JP5193639B2 |
An example of the present invention is a micromechanical device including, a substrate in which a signal line is provided, a micromachine which is mounted on the substrate, is formed of a conductive material into a beam-like shape, is el...
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JP5187441B2 |
An acceleration sensor is formed using an etched layer sandwiched between first and second substrates. In this case, a structure including a movable portion which is displaceable in the thickness direction of the substrates, and a suppor...
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JP5176148B2 |
A switching device includes a stationary portion, a movable portion having a movable land portion, and a first beam portion and a second beam portion that couple the movable land portion and the stationary portion with each other. A firs...
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JP2013058422A |
To reduce electrical non-conduction between counter electrodes, in a wafer level packaging of an MEMS wafer.In the manufacturing method of an MEMS electric member, a plurality of chip regions are defined on an MEMS wafer, a movable part ...
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JP5172360B2 |
A gating voltage control system is provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch (14). The device may comprise an electrostatically responsive actuator movable through a gap...
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JP5152062B2 |
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JP5150692B2 |
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