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WO/2001/011648 |
Electrophoretic deposition provides an inexpensive, efficient process for manufacturing a field emission cathode (10). Particles of a resistive material (18) are deposited by electrophoretic deposition on a conducting layer (14) overlyin...
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WO/2001/009914 |
The light source, comprises an evacuated container having walls, including an outer glass layer (23) which on at least part thereof is coated on the inside with a layer of phosphor (24) forming a luminescent layer and a conductive layer ...
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WO/2001/009913 |
A photocathode emitter (500) as a source of electron beams (504), having an optically transmissive substrate (501) patterned to define a protrusion, heat conducting material (506) occupying the space surrounding the protrusion, and a pho...
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WO/2001/009915 |
A photocathode as a source of electron beams, having a substrate of optically transmissive diamond and a photoemitter. A photocathode with a single emitting region provides a single electron beam; a photocathode with multiple emitting re...
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WO/2001/008239 |
The invention provides a gradient concentrator (1) consisting of conducting electrodes (2 and 3), whereby said electrodes (2 and 3) have the form of a quasiplanar tip-receptacle pair separated by a distance which ensures electron tunnell...
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WO/2001/007267 |
The invention is in the field of using a computer to select corporate stocks for investment. Fifty stocks are selected from a database (1-1) on the basis of certain criteria. The stocks are acquired in equal proportions, and the portfoli...
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WO/2001/008193 |
An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), and one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed...
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WO/2001/008192 |
A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a m...
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WO/2001/006531 |
A compact electron gun includes a field emission cathode (12), a Pierce-like electrode (18), a gate layer (14), a focus lens layer (16), a focus lens (20), and a convergence cup (22).
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WO/2001/004925 |
The flat luminescent screen of the invention contains a substrate and a matrix of electrically conductive elements consisting of rows and columns arranged on the substrate. The emitter represents a plurality of microscopic tips made from...
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WO/2001/003154 |
A field electron emission material is created by applying a silica precursor to graphite particles (11); processing the silica precursor to produce amorphous silica (12) which is doped and/or is heavily defective, and disposing the graph...
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WO/2001/001452 |
A light emitting device (10) with improved carrier injection. The device has a layer of organic light emitting material (22) and a layer of organic semiconductor material (20) that are interposed between the first (18) and second (24) co...
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WO/2000/079556 |
A cold electron emitting device comprising an emitter fabricated by etching a columnar polycrystalline film (2) formed by growing columnar crystal grains (4) along the same crystal axis on a substrate (1). Even if multiple emitters are f...
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WO/2000/077813 |
A method of producing a field emission cathode for a light source, and including at least one field emitting body having a field emitting surface, wherein the method includes modifying said emitting surface so as to provide at least one ...
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WO/2000/074107 |
New designs of electron devices such as scanning probes and field emitters based on tip structure are proposed. The tips are prepared from whiskers that are grown from the vapor phase by the vapo-liquid-solid technology. The tip structur...
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WO/2000/074098 |
A conductive material with a wider forbidden band than silicon is used as a material of an upper electrode (11) of a thin-film electron source. Especially, preferable materials include a conductive oxide such as SnO¿2? and ITO film, and...
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WO/2000/072413 |
The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal...
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WO/2000/070638 |
The inventive method for extracting electrons in a vacuum consists in the following: creation of a cathode which comprises at least one junction (9) between a metal (7) which is used as an electron reservoir and an n-type semiconductor (...
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WO/2000/065627 |
A high pressure arc discharge lamp (10) includes a sealed envelope (12); a pair of spaced electrodes (20 and 22) in the envelope; an ionizable medium (16) in the envelope for generating a plasma arc (18) between the electrodes; and a mag...
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WO/2000/060632 |
System and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a plurality of emitters that compose t...
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WO/2000/060631 |
A semiconductor cold-cathode device (1) for emitting electrons has an integral structure composed of a semiconductor (2) between a first electrode (3) and a second electrode (4). A collector electrode (6) is arranged opposite the semicon...
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WO/2000/060905 |
An organic EL device such that the color purity (the CIE chromaticity coordinates) hardly varies even if there is a certain distribution of optical path length and a method for manufacturing such an organic EL device efficiently. An orga...
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WO/2000/054299 |
A field emission device (FED) comprising an amorphous substrate; impurity diffusion preventing layer; FET formed on a formation surface of a semiconductor layer made of amorphous silicon or polycrystalline silicon; one or more emitters m...
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WO/2000/054300 |
A field emission device (200) includes a structure (205) with surface material (220) having surface states, where surface states provide resonant tunneling emission of electrons (260) upon application of an electric field (250). Surface ...
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WO/2000/054301 |
A method of providing uniform emission current from a plurality of electron emitters with a composite current voltage characteristic (620), which include surface states that provide resonant tunneling emission of electrons (260). Field e...
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WO/2000/052726 |
A cathode structure for a field emission display (FED) includes a substrate made of glass and electrodes disposed on the substrate. The substrate if formed of a photosensitive glass and includes groove-shaped recesses, with the electrode...
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WO/2000/052725 |
The invention relates to an electron emitter that is provided with conductive cylindrical areas which are located in an insulating layer that is arranged on a substrate. Said areas are arranged vertically in relation to the surface of th...
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WO/2000/052733 |
An enhanced electron source in most respects similar to a standard cathode assembly for an electron gun includes an electron emitter (14) surrounded by a suppressor electrode (16), the emitted electrons passing through an extractor elect...
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WO/2000/048220 |
The invention concerns a field emitter array capable of microwave modulation, comprising at least an array (R) of emissive tips, means for producing a microwave modulation signal including a semiconductor element (S) controllable in micr...
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WO/2000/046834 |
A field emission device (110, 210, 310, 410) includes an electron emitter (124), a first dielectric focusing layer (122) defining a first aperture (127), and a second dielectric focusing layer (123) defining a second aperture (133). Seco...
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WO/2000/033344 |
The present invention is a system and method for reducing the voltage necessary to produce a glow discharge in a gas (14). This is done by fabricating the cathode (20) in a gas discharge out of a conductive material that is permeable to ...
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WO/2000/030141 |
A field emission device (20) having bundles (28) of aligned parallel carbon nanotubes on a substrate (22). The carbon nanotubes (28) are oriented perpendicular to the substrate (22). The carbon nanotube bundles (28) may be up to 300 micr...
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WO/2000/028566 |
A direct heating cathode unit (100) including a metal alloy emitter (110) having at least two parallel lateral surfaces (113, 115) extending crosswise with respect to a longitudinal geometrical axis penetrating a base, two heater wires (...
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WO/2000/025338 |
A cathode including an electron-emitting layer formed on a substrate containing a reductive element satisfies an expression of 0.24$m(F)B/A$m(F)0.93, where A is the surface area of the substrate and B is the contact area between the subs...
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WO/2000/024027 |
A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and ...
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WO/2000/021110 |
A cathode material of an electron beam device comprising 0.5 to 9.0 % by weight of a rare-earth metal of the cerium group, 0.5 to 15.0 % by weight of tungsten and/or rhenium, 0.5 to 10 % by weight of hafnium and the balance of iridium is...
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WO/2000/013197 |
A field emission source (10) comprises a p-type silicon substrate (1), an n-type region (8) formed into stripes in a major surface of the substrate (1), strong-field drift layers (6) which are formed on the n-type region (8) in which ele...
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WO/2000/010643 |
A cathode structure comprising a getter material provided with a diamond film. The getter material may include zirconium, vanadium and iron. Cathode structures may have a substantially rounded configuration including a substantially stra...
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WO/2000/011104 |
The invention relates to a method of coating a luminescent material with a layer of a metal oxide M¿2?O¿3? wherein a metal M is chosen from the group formed by Y, AI and La. According to the invention, a watery solution of a complex of...
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WO/2000/010190 |
The present invention relates to a field emitter of electrons comprising a substrate with a deposited layer on it. According to the invention the substrate is made of nanomaterial, i.e. a porous carbon material having skeleton structure,...
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WO/2000/008667 |
A field electron emission material has a substrate (1700) with an electrically conductive surface. Electron emission sites on the conductive surface each include a layer of electrically insulating material (1703) to define a primary inte...
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WO/2000/002222 |
The invention concerns a field emission device comprising at least a planar cathode (1) made of conductive material with low electronic affinity located on one face (20) of a substrate (2) bearing a dielectric material layer (4) having a...
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WO/2000/002223 |
A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semicon...
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WO/1999/067804 |
An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surfa...
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WO/1999/067802 |
A photocathode comprising a laminate (10) composed of a UV glass substrate (3) and, successively formed thereof, an SiO2 layer (15), a GaAlN layer (17a), a III - V nitride semiconductor layer (18) and a Cs-O layer (19). The UV glass subs...
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WO/1999/065821 |
One or more highly-oriented, multi-walled carbon nanotubes are grown on an outer surface of a substrate initially disposed with a catalyst film or catalyst nano-dot by plasma enhanced hot filament chemical vapor deposition of a carbon so...
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WO/1999/066523 |
An electron emitting device comprising a first electrode (2) and an electron emitting part (24) provided on the first electrode (2) and constituted of particles or their aggregates (3), the particles (3) containing a carbonaceous materia...
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WO/1999/065050 |
A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator,...
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WO/1999/063568 |
A unfibrous field emission element (30) is provided including a conductive fibrous central core element (32) having an insulating material (33) directly thereon the conductive fibrous central core element and a gate electrode (34) direct...
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WO/1999/060597 |
The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied ...
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