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WO/2001/063637A2 |
The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a ...
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WO/2001/061753A1 |
The invention relates to an electronic component comprising a first conductive layer, a non-conductive layer and a second conductive layer. A hole is etched through the non-conductive layer. A nanotube, which is provided in said hole, li...
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WO/2001/061719A1 |
The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporatio...
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WO/2001/059800A1 |
A field emission device (100) includes a cathode (110) and a ballast resistor (112) connected to cathode (110). Ballast resistor (112) includes a thin metallic layer (113) and a protective layer (114) disposed on metallic layer (113). Me...
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WO/2001/056055A1 |
An improved microchannel plate (24) is disclosed. The microchannel plate has an input side (24a) and an output side (24b). A coating (32) is applied to the input side (24a) to increase secondary electron production and to prevent ions fr...
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WO/2001/056050A2 |
The present invention provides a spacer assembly (100) which is tailored to provide a secondary electron emission coefficient of approximately 1 for the spacer assembly (100) when the spacer assembly (100) is subjected to flat panel disp...
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WO/2001/054158A1 |
A visual has a multilayer ceramic substrate (1) with an emission layer (2) on its front face. The substrate is mounted on carrier (4) with a L-shaped cross-section via the foot (41) of the L. A glass face plate (5) is on the top of the m...
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WO/2001/054157A1 |
A cathode (5) for emitting photoelectrons or secondary electrons comprises a nickel electrode substrate (5c) with an aluminum layer (5b) deposited on it; an intermediate layer (5a) consisting of carbon nanotubes formed on the aluminum la...
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WO/2001/052328A1 |
A field emitter cell (10) includes a thin-film-edge emitter (22) normal to the gate layer (18). The field emitter cell (10) may include a conductive layer substrate (12), an insulator layer (16) having a perforation (20), a gate layer (1...
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WO/2001/052297A1 |
A photoemissive surface (10) includes a p-type silicon substrate (11), a porous silicon area (12) formed on the p-type silicon substrate (11), an Au electrode (13) formed on the porous silicon area (12), and an ohmic electrode (14) forme...
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WO/2001/050491A1 |
A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode (17) of a gated field emission cathode and independently driving the various gat...
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WO1999065821A9 |
One or more highly-oriented, multi-walled carbon nanotubes are grown on an outer surface of a substrate initially disposed with a catalyst film or catalyst nano-dot by plasma enhanced hot filament chemical vapor deposition of a carbon so...
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WO/2001/039236A1 |
A cathode structure for use in field emission display (FED) devices includes four layers. A first layer consists of conducting lines (14) supported on an insulating substrate. A second layer consists of thin non-conducting lines (18) cro...
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WO/2001/035435A1 |
An electron tube cathode and a method for manufacturing the same are hereby provided. In the electron tube, the fine uneven portion is formed on one of the surfaces of the base by electrochemical etching in a single electrochemical bath....
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WO/2001/035434A1 |
The invention concerns a cathode emitting electrons comprising a substrate (1) produced in the form of a metal filament having a diameter ranging between 50 and 400 $g(m)m and, preferably, of the order of 100 $g(m)m, or a planar metal ch...
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WO/2001/027963A1 |
An electron-emitting device having a low operating voltage, a large operating current, and an excellent operation stability. A cold-cathode member is made of a mixture of first particles for emitting electrons into a space and second par...
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WO/2001/026128A1 |
A thin-film electron source comprises a plurality of electron source elements, each including a laminate of a lower electrode (11), an insulating layer (12) and an upper electrode (13) formed in that order; and a plurality of buses for a...
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WO/2001/024290A1 |
The present invention provides co-doped zinc oxide to flat panel, light emissive display devices and vacuum microelectronic devices to improve their efficiency and lifetime. This material has a low growth temperature and is compatible wi...
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WO/2001/024217A1 |
The invention pertains to electron exposure equipment useful for exposing, treating and processing coatings and other materials by a cold cathode gas discharge electron source having a broad uniform emitting area. The apparatus has a vac...
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WO/2001/020639A1 |
A display device comprises a plurality of electron sources (301) of a laminated structure consisting in a lower electrode, an insulation layer and an upper electrode; a plurality of row electrodes (310) for applying drive voltage to the ...
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WO/2001/020638A1 |
A carbon and/or diamond film (501) for a field emitter device (80), which may be utilized within a computer display, is produced by a process utilizing treatment of a substance and then depositing the film. The treatment step creates nuc...
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WO/2001/018839A1 |
A process for manufacturing a thin-film electron source including a lower electrode (11), an upper electrode, and an insulating layer sandwiched between the lower electrode (11) and the upper electrode. The process comprises a first step...
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WO/2001/018838A1 |
The invention concerns a device for producing an electric field between two electrodes (35, 37), said electric field intended to have a predetermined value in the proximity of one (35) of the two electrodes, the device comprising means f...
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WO/2001/015192A1 |
A electron emission cathode includes an emitter (102) having an apex (118) from which electrons are emitted. The emitter is attached to a heating filament (114) at a junction (116) and extends from the junction both forward toward the ap...
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WO/2001/015194A1 |
A masking layer (405) is provided on selected areas of an electrode structure that is at least partly performed, to define masked areas and unmasked areas (emitter cells 410). A first constituent with particles (408) and a second constit...
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WO/2001/011648A1 |
Electrophoretic deposition provides an inexpensive, efficient process for manufacturing a field emission cathode (10). Particles of a resistive material (18) are deposited by electrophoretic deposition on a conducting layer (14) overlyin...
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WO/2001/011647A1 |
Electrophoretic deposition provides an efficient process for manufacturing a field emission cathode (10). Particles (19) of an electron emitting material mixed with particles (18) of an insulating material are deposited by electrophoreti...
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WO/2001/009913A2 |
A photocathode emitter (500) as a source of electron beams (504), having an optically transmissive substrate (501) patterned to define a protrusion, heat conducting material (506) occupying the space surrounding the protrusion, and a pho...
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WO/2001/009914A1 |
The light source, comprises an evacuated container having walls, including an outer glass layer (23) which on at least part thereof is coated on the inside with a layer of phosphor (24) forming a luminescent layer and a conductive layer ...
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WO/2001/008193A1 |
An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60), a drain (150), and one or more insulated gates (40, 160). The insulated gate(s) are preferably disposed...
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WO/2001/008192A1 |
A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a m...
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WO/2001/008239A1 |
The invention provides a gradient concentrator (1) consisting of conducting electrodes (2 and 3), whereby said electrodes (2 and 3) have the form of a quasiplanar tip-receptacle pair separated by a distance which ensures electron tunnell...
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WO/2001/007267A1 |
The invention is in the field of using a computer to select corporate stocks for investment. Fifty stocks are selected from a database (1-1) on the basis of certain criteria. The stocks are acquired in equal proportions, and the portfoli...
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WO/2001/006531A1 |
A compact electron gun includes a field emission cathode (12), a Pierce-like electrode (18), a gate layer (14), a focus lens layer (16), a focus lens (20), and a convergence cup (22).
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WO/2001/004925A1 |
The flat luminescent screen of the invention contains a substrate and a matrix of electrically conductive elements consisting of rows and columns arranged on the substrate. The emitter represents a plurality of microscopic tips made from...
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WO/2001/003154A1 |
A field electron emission material is created by applying a silica precursor to graphite particles (11); processing the silica precursor to produce amorphous silica (12) which is doped and/or is heavily defective, and disposing the graph...
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WO/2000/079556A1 |
A cold electron emitting device comprising an emitter fabricated by etching a columnar polycrystalline film (2) formed by growing columnar crystal grains (4) along the same crystal axis on a substrate (1). Even if multiple emitters are f...
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WO/2000/077813A1 |
A method of producing a field emission cathode for a light source, and including at least one field emitting body having a field emitting surface, wherein the method includes modifying said emitting surface so as to provide at least one ...
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WO/2000/074098A1 |
A conductive material with a wider forbidden band than silicon is used as a material of an upper electrode (11) of a thin-film electron source. Especially, preferable materials include a conductive oxide such as SnO¿2? and ITO film, and...
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WO/2000/074107A2 |
New designs of electron devices such as scanning probes and field emitters based on tip structure are proposed. The tips are prepared from whiskers that are grown from the vapor phase by the vapo-liquid-solid technology. The tip structur...
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WO/2000/072413A2 |
The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal...
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WO/2000/070638A1 |
The inventive method for extracting electrons in a vacuum consists in the following: creation of a cathode which comprises at least one junction (9) between a metal (7) which is used as an electron reservoir and an n-type semiconductor (...
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WO/2000/065627A1 |
A high pressure arc discharge lamp (10) includes a sealed envelope (12); a pair of spaced electrodes (20 and 22) in the envelope; an ionizable medium (16) in the envelope for generating a plasma arc (18) between the electrodes; and a mag...
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WO/2000/060632A2 |
System and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a plurality of emitters that compose t...
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WO/2000/060631A1 |
A semiconductor cold-cathode device (1) for emitting electrons has an integral structure composed of a semiconductor (2) between a first electrode (3) and a second electrode (4). A collector electrode (6) is arranged opposite the semicon...
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WO/2000/060905A1 |
An organic EL device such that the color purity (the CIE chromaticity coordinates) hardly varies even if there is a certain distribution of optical path length and a method for manufacturing such an organic EL device efficiently. An orga...
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WO/2000/054301A1 |
A method of providing uniform emission current from a plurality of electron emitters with a composite current voltage characteristic (620), which include surface states that provide resonant tunneling emission of electrons (260). Field e...
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WO/2000/054300A1 |
A field emission device (200) includes a structure (205) with surface material (220) having surface states, where surface states provide resonant tunneling emission of electrons (260) upon application of an electric field (250). Surface ...
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WO/2000/054299A1 |
A field emission device (FED) comprising an amorphous substrate; impurity diffusion preventing layer; FET formed on a formation surface of a semiconductor layer made of amorphous silicon or polycrystalline silicon; one or more emitters m...
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WO/2000/052725A1 |
The invention relates to an electron emitter that is provided with conductive cylindrical areas which are located in an insulating layer that is arranged on a substrate. Said areas are arranged vertically in relation to the surface of th...
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