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WO/1990/010303A2 |
A method for producing an ion beam for ion implantation by chemically enhanced bombardment of solids. The method is carried out in a reaction chamber having an anode and cathode and a cathode liner rich in a selected element, namely boro...
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WO/1989/008972A1 |
Method and apparatus for forming coherent clusters. The apparatus comprises a chamber (14) from which helium gas is expanded through a nozzle (16) to a vacuum chamber (25). A beam (31) of electrons from a source (29) is directed to impin...
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WO/1989/004546A1 |
The invention concerns a magnetron ion source without filament comprising a magnetron, a microwave waveguide or a microwave coaxial line, a cylindrical hollow resonator, a lambda 4 choke piston, ECR magnets and a quartz dome. Also descri...
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WO/1989/004217A1 |
An electron cyclotron resonance (ECR) plasma source (10) for generating a plasma (P) for etching, deposition, predeposition and material property modification processes. The plasma source (10) includes two magnetic field sources (18, 20a...
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WO/1988/009562A2 |
A binary, boron-based alloy as a source for field-emission-type, ion-beam generating devices, wherein boron predominates in the alloy, preferably with a presence of about 60 atomic percent. The other constituent in the alloy is selected ...
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WO/1988/008659A1 |
An apparatus for processing with plasma wherein a gas is introduced into a plasma forming chamber (20) through a gas introduction pipe (22), input microwave from a microwave source (31) is supplied to the plasma forming chamber (20), and...
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WO/1988/008198A1 |
A plasma focus apparatus has a field distortion element (25) in the interelectrode gap (7) at the breech end displaced from the sleeve of insulating material (17) between the electrodes (3, 5). As a result, the neutron yield of the accel...
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WO/1988/007259A1 |
A high-frequency ion source produces ion beams of large surface area and high current strength, of any desired cross-sectional shape, e.g. ribbon-shaped, from any desired type of ions. In a tubular plasma vessel (1) of the same shape as ...
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WO/1988/003742A1 |
A dynamic electron emitter (10) includes a cold cathode (16) in a cathode chamber (12) emitting electrons in a focussed beam at and through a small orifice (26) into a receiving chamber (14) containing an anode (28) and which may be the ...
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WO/1988/002546A1 |
High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generat...
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WO/1988/002548A1 |
A moveable ion source is provided in apparatus for ion implantation to enable ions to be directed from different directions onto bulky target objects. The ion source may be connected on the outside of a vacuum chamber or on a mobile arm ...
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WO/1988/001020A1 |
An emission current control system for balancing the individual emission currents from an array of hollow cathodes (12, 14) has current sensors (28, 30) for determining the current drawn by each cathode from a power supply (18). Each cur...
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WO/1987/007760A1 |
A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma (16) and a hybrid plasma (45) derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons f...
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WO/1987/006407A2 |
A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy ...
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WO/1987/006390A2 |
A liquid metal ion source (10) and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and...
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WO/1987/006389A1 |
Apparatus and methods for introducing ion source material (400) into an ion source. A vaporizer unit (200) which is removable from the system is prepared for insertion into the ion implant equipment outside the system. It is cleaned, a n...
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WO1987003739A1 |
A liquid metal ion source which is prepared by melting a material to be ionized. The material to be ionized is an alloy represented by the compositional formula of LX?RY?MA? wherein X, Y, and A each represents an atomic %, L represents a...
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WO/1987/001873A1 |
An improved radiation source, exploiting the spontaneous radiation generated from the interaction of an electron beam and a conductive grating. Conditions are defined for generating coherent or noncoherent radiation, and for extending th...
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WO/1987/000681A1 |
A macroscopic baser (boson equivalent of a laser). Bosons such as deuterium particles generated by an ion source (2) are injected into a vacuum tube (1), so as to execute motion on a circulatory path therein. Movement of the bosons in th...
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WO/1986/006874A1 |
A charge forming system and apparatus (20) for introducing ion source materials (24) into the ion source vaporizer (10) of an ion implant instrument.
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WO/1986/006210A1 |
A process for preparing a liquid metal ion source (10) structure, preferably made from graphite, so that it may be wetted with boron-containing alloys. The process first involves the coating the source structure with elemental boron (74)...
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WO/1986/004501A1 |
A soft multi-chamber capsule consists of a covering, the inner space of which is divided into a plurality of chambers by at least one partition. These chambers contain materials, for example, medicine, cosmetics or food. The number of su...
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WO/1986/000465A1 |
An improved Wire-Ion-Plasma Electron-gun (WIP E-gun) (50), having a very rapid electron beam current interruption capability. An auxiliary grid (65) is employed to provide a potential barrier to the reservoir of plasma ions in the ioniza...
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WO/1984/004202A1 |
A nickel-based alloy containing elements of ions to be taken out including B, P, Si, As, and C is used as liquid metal ion source. The alloy has a composition of NiaXb wherein X represents at least one element selected from among B, P, S...
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WO/1983/000751A1 |
Method and apparatus for ion generation with enhanced performance through operation at elevated temperatures. A glow discharge ion generator is subjected to extrinsic heating, both preliminarily and during continued operation, thereby pr...
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WO/1982/004350A1 |
Thermionic cathode (12) for a plasma ion source (10) has tungsten wire (64) advanced by wheels (56) from supply (50) to take-up spool (58). In chamber (48), the active cathode region (64) acts with anode (16) to supply electrons for ioni...
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JP7464781B2 |
To provide an ion generating device capable of stably generating high-purity multivalent ions.An ion generating device 10 includes an arc chamber 50 for compartmenting a plasma generation space S, a cathode 56 for emitting thermions to t...
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JP7458309B2 |
The present invention makes it possible to obtain an ion beam having a relatively long pulse width. A laser ion source (20) comprises: a laser oscillator (201) that outputs a laser beam (LB); a target (205) that generates plasma (PL) by ...
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JP7455857B2 |
An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing powe...
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JP7455861B2 |
An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chamb...
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JP7451551B2 |
Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupl...
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JP7449747B2 |
To prevent the life of a filament of an ion source from being shortened while ensuring insulation.A gas piping structure of a piping system 5 that supplies ion source gas from an ion source gas storage unit 3 to an ion source 2 includes ...
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JP2024510834A |
A wide range of ion sources for mass spectrometers include a first part and a second part disposed downstream of said first part. The first portion includes an anode and a first filament disposed proximate the anode and fixed in position...
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JP7440558B2 |
Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. S...
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JP7440528B2 |
An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By ...
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JP7437611B2 |
To provide an ion source which reduces gas leakage from a plasma chamber, thereby achieving improvement in gas utilization efficiency.An ion source 31 includes: support members (35, 50) supporting members (34, 4) disposed in a plasma cha...
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JP2024019799A |
An object of the present invention is to shorten the time required to switch ion species. [Solution] By supplying a reactive gas that reacts with the solid material 4 through a first gas supply path 14 to a crucible 3 provided with a sol...
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JP7429154B2 |
To provide a microwave ion source capable of stably obtaining ion beam over a long time, and a particle acceleration system including the same.The microwave ion source includes: a discharge chamber 8; a magnetic field generator 4 formed ...
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JP2024013271A |
The present invention provides an ion source that increases extraction efficiency of an ion beam. [Solution] A plasma generation container 10A having an internal space IS in which plasma is generated, an electron emitting member 30 havin...
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JP2024015122A |
It is an object of the present invention to provide a method for generating ions of a gaseous species plasma in which the energy of the generated ions of the gaseous species is set or adjusted, thereby improving the ability to maintain p...
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JP2024013008A |
An object of the present invention is to start maintenance of an ion source early after the operation of the ion source is stopped. [Solution] An ion beam irradiation device IM includes a plasma generation vessel 2 in which plasma is gen...
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JP7425835B2 |
A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from the plasma to a cavity within a substrate at a non-zero angle of incidence wit...
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JP7423763B2 |
An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodim...
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JP2024502752A |
Additive manufacturing using powder bed fusion bonding A powder bed fusion bonding apparatus configured to irradiate a powder bed using a charged particle beam, the apparatus comprising neutralizing particles of opposite charge to the ch...
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JP7414602B2 |
There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines th...
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JP7412074B2 |
The present invention provides a negative ion irradiation device and a control method of the negative ion irradiation device that can improve the manufacturing efficiency and the quality of a compound semiconductor. A control unit (50) c...
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JP2024500329A |
The ion source includes a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a first wall extending from the first end to the second end. and a second wall opposite the first ...
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JP7404119B2 |
An apparatus for producing negative ions capable of suppressing damage to an object is provided. The apparatus for producing negative ions (1) comprises an ultraviolet light suppression device (60) for suppressing ultraviolet light (UV) ...
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JP7404134B2 |
To produce a large amount of multivalent ions using a PIG ion source device.An ion source device 1 (PIG ion source device) includes a cold cathode type PIG ion source 2, and a control unit 5 that changes at least one of the gas pressure ...
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JP7030696B6 |
Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a de...
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