| Document |
Document Title |
|
JP3716700 |
To enhance the rate of the molecular ion extracted from the ion source in the ion beam. The ion source is designed to satisfy the relation L<3.37 B-1√(VA)×10-6 where the arc voltage impressed between the plasma-generating receptacle 2...
|
|
JP3718315 |
To provide the plasma uniformity of a drawing electrode by mounting a plasma source as a plasma generation source based on magnetic neutral conductor discharging and controlling the generation position of a magnetic neutral conductor. A ...
|
|
JP3716697 |
To provide an ion beam generator which generates an ion beam using solid or liquid raw materials at the normal temperature and can efficiently and stably generate ion beam of desired ion species in a wide dynamic range. The ion beam gene...
|
|
JP3717655 |
To provide a treatment apparatus in which a shield electrode of a plasma generating apparatus is improved. A shield electrode 25 of a plasma generating apparatus comprises two parts, i.e., a shield body 26 to prevent an anode 21 and a ca...
|
|
JP2005243420 |
To achieve efficient beam extraction and uniformity of ion irradiation amount in an irradiation region for the extracted beam for an ion beam irradiation apparatus.An insulating member is provided at least either between a plurality of g...
|
|
JP2005243418 |
To provide an insulating spacer which holds each interval between a plurality of grids of an ion beam irradiation apparatus at a fixed size.The insulating spacer, which is disposed for holding insulation between grids, is shaped into a d...
|
|
JP3713683 |
To simplify electrode structure for an ion source, to reduce its size, and to selectively remove an unnecessary ionic species. This mass separation ion filter 20 has the first magnet 22 for forming the first magnetic field orthogonal to ...
|
|
JP2005235697 |
To provide a beam transport apparatus which uses an electrostatic lens of low cost and simple configuration, and transporting a large current beam in high beam utilization efficiency even in a long transportation zone.A lead-out electrod...
|
|
JP3713524 |
To provide an ion accelerator, simplified substantially, which efficiently pulls out all ions contained in acceleratable plasmas generated, and moreover, is capable of accelerating ion beams of long pulse width as well. A plasma generati...
|
|
JP3711228 |
To provide a filament support structure by which the filament can be easily replaced. The filament support structure has two holders 20, 22 overlapped with an insulator inserted in between 24. The members 20, 22, 24 are fixed to a plasma...
|
|
JP3700003 |
To improve the whole capacity of a power unit by returning a detected value of directly detected amount of generated ion beam to a controlling circuit of a discharge power supply, without adhering to constant current control of the disch...
|
|
JP3696163 |
To remove unwanted contaminants generated by a radiation source. Contaminant particles which move together with a projected beam are ionized. A purge gas can be attracted toward a gettering plate provided on the upstream of a purge gas s...
|
|
JP2005183062 |
To solve the following problem that: though a magnetic filter uniform over a wide area is formed to uniformize negative ion density conventionally, since a negative ion source is enlarged to obtain high power and negative ions are pulled...
|
|
JP2005179752 |
To selectively pass cluster ions with the required cluster sizes from gas cluster ion beams without enlarging a gas cluster ion beam apparatus.To the electrodes 19 and 21 of a high frequency accelerating electrode system 11 arranged down...
|
|
JP2005183194 |
To solve a problem wherein the efficiency of the emitted ions is poor and the ions exist only around a cylinder in a conventional device emitting directive ions since it uses ions generated by another device in advance, hence, positive c...
|
|
JP2005183331 |
To easily obtain the constantly uniform current density of ion beams in a wide range of a plasma density region without complicated work.An intermediate grid 8 closely contacted to the upper surface of a shielding grid 6 is provided, and...
|
|
JP2005183382 |
To provide an ion source and an ion implanting device having the same.Ion to be implanted into a surface of a semiconductor substrate is generated form the ion source 100. The ion source 100 comprises an arc chamber 110, a first filament...
|
|
JP2005174913 |
To provide an ion source having a cathode and a counter cathode suitable for ion injection.The ion source comprise a vacuum chamber; an arc chamber operable for generating and involving plasma; a cathode operable for emitting an electron...
|
|
JP2005174604 |
To make ion emission of Ga liquid metal ion source (LMIS) stable and long-lived.An emitter 2-11 of Ga liquid metal ion source 2-1 is constituted by including W12 of basic material and Ga9 of ion source material covering the surface as co...
|
|
JP2005174569 |
To provide an ion beam having constantly uniform current density even at a short distance from an ion source.Hole diameters of extraction holes 6a and 7a of grids 6 and 7 are varied according to the plasma density of a plasma chamber 2. ...
|
|
JP2005150058 |
To provide a device for discharging liquid metal ions wherein a metal ion discharging area can be made extremely small and a structure in which a flow to an ion discharging part of the liquid metal cannot be easily influenced by a vacuum...
|
|
JP3680836 |
To provide a plasma source device as a novel composite vapor deposition device usable for an ion source and a radical source, capable of forming a good quality thin film on a base board by selectively emitting only a radical of film form...
|
|
JP2005116494 |
To provide a vapor ion source with performances for a certain electric input power in which ionic strength per unit volume is high; a lifetime of ion source, especially a lifetime of negative hydrogen ion source, is long; the size of the...
|
|
JP2005116312 |
To provide a microwave plasma generator preventing a gas to increase the output of a negative ion beam from adhering to the wall of a wave guide, efficiently generating a negative ion, and restraining a vacuum window from being broken by...
|
|
JP3670263 |
To provide a waveguide which is capable of efficiently guiding an electromagnetic wave such as a microwave and also improves physical and chemical durability, and a microwave ion source using the said waveguide. The waveguide has a waveg...
|
|
JP3666768 |
To enhance thermal stability, make temperature uniform, and stabilize the negative beam output by introducing cooling air into a tubular space in a target chamber. A cell has a housing 1 having a beam inlet opening 2 and a beam outlet op...
|
|
JP3663716 |
To provide a quadrupole ion accumulating ring which stably accumulates ion beams without receiving disturbance of a high frequency electric field by positioning the orbit of ion beams in the bottom of pseudo-potential. In a high frequenc...
|
|
JP2005093309 |
To provide a vaporizer for an ion source capable of preventing the clogging and seizure of a nozzle.The vaporizer sends a solid source such as arsenic vaporized inside a crucible into an arc chamber through the nozzle and has the nozzle ...
|
|
JP2005093312 |
To provide a gas cluster ion-beam apparatus which facilitates exchange work of an ionization portion and a lead out electrode in an ionization chamber when maintenance work is performed.The ionization portion 7 and the extraction electro...
|
|
JP3660457 |
To easily and stably generate ions even in the case of a metal having a high melting point, an alkaline metal or the like by holding a material plate for generating ions within a vessel, generating a plasma for sputtering and generating ...
|
|
JP3655491 |
To generate desired ions stably and safely by heating an ion source material made of a compound of the element (e.g. In) of the desired ions to be generated and iodine to generate the vapor of the compound, and electrically discharging t...
|
|
JP3653547 |
To provide a large-area negative ion source capable of having a large area and high density and constantly generating negative ions. This large-area negative ion source is provided with a vacuum vessel 1 extended in one direction and eva...
|
|
JP2005063865 |
To provide a focused ion beam device equipped with a liquid metal ion source capable of realizing correct measurement of an emission current, and generation of a stable ion beam.The distance between an extraction electrode 1 of the liqui...
|
|
JP3651435 |
To provide an ion source which can completely prevent the effluence of ions during a temporary stop of an operation for generating a beam. The effluence of ions from the plasma room can be shut out by setting up the potential of a beam p...
|
|
JP2005056768 |
To provide a plasma treatment device and a method generating plasma surely in a short time and stably maintaining the same until it transits to a matching position after it has once been generated.The plasma treatment device is provided ...
|
|
JP2005050600 |
To provide an electrode plate for an ion source which is higher in cooling effect and lower in price with no mixing of impurities such as a wax material in plasm, thermal deformation and leakage of a refrigerant.The electrode plate for t...
|
|
JP2005050776 |
To solve problems that an electromagnetic field feeder and a plasma device using it become large in sizes as a whole and expensive in price.A rectangular/cylindrical circularly polarized wave converter 13 is used that is composed of a fi...
|
|
JP2005050617 |
To provide an ion implanting device capable of implanting generated ions by making them efficiently reach an object member, and obtaining a desired quantity of ion implantation without requiring a long time.This ion implanting device is ...
|
|
JP3647592 |
To generate large-area and high-density plasma, in a processing plasma processor used for CVD (chemical deposition), etching, or an ion source. In the processor, conductive parallel plates sandwich a dielectric substance 14, and at least...
|
|
JP3647303 |
To provide a plasma processing system which is capable of processing a work at a higher speed and lessening charge-up damage inflicted on a work by a method wherein a large amount of negative ions are generated and made to impinge on the...
|
|
JP2005044517 |
To provide an electron beam processing device capable of preventing deviation of an ion beam to the center, and of keeping a cooling effect of an acceleration grid.This electron beam processing device is equipped with: a plasma generatio...
|
|
JP2005038689 |
To provide an ion source capable of generating ion beam having an oblong cross-section with excellent uniformity within the cross-section.The ion source 2 comprises a scanning electron source 4 generating electron 10 scanned in an X dire...
|
|
JP3640985 |
PURPOSE: To provide a plasma gun head especially suitable for covering the inner wall of a small diameter tube, a path or the like, capable of effectively cooling, and operable for a long time. CONSTITUTION: A cathode assembly 4 is inser...
|
|
JP3640947 |
To provide an ion source contributing to extending the service life when used for manufacturing a microstructure semiconductor device, to provide an ion implantation device, and to provide a manufacturing method of a semiconductor device...
|
|
JP3637724 |
To decrease leakage of a microwaves from an ion source when a plasma is not lit and dimmed by determining a microwave mode so that a slit longitudinal direction of the ion source and an electric field direction of the microwaves are para...
|
|
JP2005019388 |
To provide an ion source making material gas injected with high pressure from a minute opening of an anode electrode flow in an injection direction without making the gas accumulate between cathode electrodes, generating good plasma by i...
|
|
JP2005010014 |
To provide a method of performing separation or separation preparation of a sample for analysis from a wafer, without contaminating with an element, such as Ga, that becomes a problem, when processing the wafer.A sample machining method ...
|
|
JP3632356 |
To provide a coaxial-type current lead-in terminal, which does not cause vacuum leak at the time of replacement of filament and does not require dismantling the entire ion source. A terminal 35 to connect one end of a filament is coupled...
|
|
JP2005005197 |
To achieve higher efficiency of a high-frequency ion source while improving the heavy ion generation ratio by reducing unnecessary hydrogen ions.An ion source apparatus 1 is characterised by having a control means for controlling the pos...
|
|
JP2004362937 |
To provide a scattering analyzer which is excellent in efficiency and hardly generates X-ray by suppressing impurity ion beams in a gas ion source mounted in a high-voltage terminal casing of the high-energy ion beam scattering analyzer....
|
