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WO/1986/004501 |
A soft multi-chamber capsule consists of a covering, the inner space of which is divided into a plurality of chambers by at least one partition. These chambers contain materials, for example, medicine, cosmetics or food. The number of su...
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WO/1986/000465 |
An improved Wire-Ion-Plasma Electron-gun (WIP E-gun) (50), having a very rapid electron beam current interruption capability. An auxiliary grid (65) is employed to provide a potential barrier to the reservoir of plasma ions in the ioniza...
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WO/1984/004202 |
A nickel-based alloy containing elements of ions to be taken out including B, P, Si, As, and C is used as liquid metal ion source. The alloy has a composition of NiaXb wherein X represents at least one element selected from among B, P, S...
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WO/1983/000751 |
Method and apparatus for ion generation with enhanced performance through operation at elevated temperatures. A glow discharge ion generator is subjected to extrinsic heating, both preliminarily and during continued operation, thereby pr...
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WO/1982/004350 |
Thermionic cathode (12) for a plasma ion source (10) has tungsten wire (64) advanced by wheels (56) from supply (50) to take-up spool (58). In chamber (48), the active cathode region (64) acts with anode (16) to supply electrons for ioni...
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JP2012018905 |
To provide an ion source.An ion source comprises a vacuum vessel, a field emission electron source, and an ion electrode. The ion electrode is arranged at one end of the vacuum vessel. The field emission electron source is arranged in th...
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JP2012008145 |
To increase sensitivity of an SMIS system.The sensitivity of a secondary ion mass spectrometer (SIMS) is increased by using steam in order to raise yield of a positive secondary ion to be sputtered by a primary convergence ion beam. The ...
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JP2012004012 |
To provide a gas cluster ion beam device capable of enhancing ionization efficiency while keeping the number of neutral particles composing a gas cluster.An ionization section where gas cluster ions are generated from a gas cluster is ar...
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JP2011253775 |
To provide an ion implantation apparatus which achieves ion implantation of low COO into a glass substrate without using a collimator lens.The ion implantation apparatus of the present invention is a mass-spectrometry type ion implantati...
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JP2011243591 |
To provide an ion source which has an improved generation amount as to cluster ions for operation of a secondary ion mass analyzer so as to achieve high efficiency of secondary ion generation with a high data rate (Datenraten) and a shor...
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JP2011238630 |
To improve stability of a gas field ionization ion source.This invention relates to cooling in a GFIS using solid nitrogen. The gas field ionization ion source includes a needle-shaped anode emitter and an extraction electrode to form a ...
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JP2011238480 |
To provide the emitter of a field ionization type gas ion source through which a large ion emission current can be obtained.The emitter 1 of a field ionization type gas ion source has a cylindrical or truncated conical base 1a, and a tap...
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JP2011233509 |
To provide a focused ion beam device which exhibits high throughput of sample processing by increasing the amount of ion beam used for irradiating a sample.In the emitter of a field ionization type ion source which emits an ion beam 7 by...
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JP2011233355 |
To reduce manufacturing costs of an ECR ion source.This mirror magnetic field generation device 1 of the ECR ion source includes: a plasma chamber 2 which generates plasma to be closed in it; and a mirror magnetic field generation part 3...
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JP2011228044 |
To enhance plasma generation efficiency in a so-called bucket-type ion source.An ion source comprises a rectangular parallelepiped plasma generation vessel 21 having an ion extraction port 21H formed in one sidewall 21a, a plurality of m...
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JP2011210492 |
To use appropriate ion species in accordance with applications by easily carrying out changeover of ion species of ion sources.The focused ion beam device includes a storage part 302 storing a set temperature of a chip, gas pressure of i...
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JP2011210489 |
To provide a liquid metal ion source, capable of improving the stability of an emission current value for ion beams, to provide a method of manufacturing the liquid metal ion source, and to provide an ion beam irradiation device with the...
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JP2011204672 |
To provide a method for igniting plasma in a focused ion beam system in which the inductively coupled plasma ion source is biased to a high dc voltage.In the focused ion beam system, a high dc voltage of a biasing power supply 930 connec...
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JP2011198656 |
To provide an electrode structure of a macron accelerator, capable of controlling a macron supply precisely and moreover capable of irradiating a target with a large amount of macron even if an insulating material (including a semi-insul...
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JP2011185845 |
To perform cross-sectional processing observation which enables observing a cross-section of an observation object structure, including a sample having a periodic structure.A focused ion beam device includes a focused ion beam irradiatio...
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JP2011181894 |
To repair defects of an EUV mask without markedly deteriorating reflectance of a reflection layer in the EUV mask.A defect repair apparatus for an EUV mask includes: an electric field ionization type ion source that generates a hydrogen ...
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JP2011171008 |
To achieve a stable irradiation of a beam without using a complicated adjusting mechanism.A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3...
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JP2011171009 |
To achieve a stable irradiation of a beam without using a complicated adjusting mechanism.A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3...
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JP2011146690 |
To provide an ion beam generator which achieves uniformity of incident ion beam on a substrate without increasing the size of the whole generator.The ion mean generator generates plasma in a discharge tank 2, leads out an annular ion bea...
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JP2011142081 |
To provide a means and a method for cooling a plasma chamber and a means and a method for preventing abnormal discharge between the plasma chamber and a grounding potential in an inductive coupled plasma ion source to be used for a focus...
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JP2011134632 |
To provide an ion particle power source capable of emitting high-quality beams through restraint of voltage fall of an accelerated power source at starting of beam extraction.The ion particle power source is structured of a filament powe...
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JP2011134674 |
To provide an ion beam generating device in which burning of power source can be prevented by installing a bypass circuit connected in parallel between a second electrode and a power source connected to the second electrode of the ion be...
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JP2011129270 |
To provide an ion beam generator small in thermal distortion in a grid assembly.In the ion beam generator, thermal expansion coefficients αP, αM and αG, for a sidewall (1A) of a discharge chamber, a mounting platform (40) and an extra...
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JP2011129522 |
To provide an ion beam source which can be used even for deposition of an insulating material without forming an arc discharge caused by rapid electrification due to positive ion flow made incident to a target surface.The ion beam source...
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JP2011124059 |
To enlarge an area of a sputtered face as much as possible, and at the same time, improve the efficiency of reflection of electrons emitted from a cathode, while simplifying a mounting structure of a sputtered member and also making a re...
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JP2011124215 |
To provide a technique which can remove an adhesion film adhered to a third electrode without damaging the same in an ion beam generator having an extraction electrode composed of three porous-plate electrodes.In the ion beam generator, ...
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JP2011108508 |
To provide an ion source capable of achieving longer life by restraining damage on a tip end of an electric field ionization electrode.The ion source has the electric field ionization electrode 10 with a pointed tip end 16, a container 2...
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JP2011100722 |
To provide a method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively coupled plasma ion source.In the method, two sets of FIB system operating parameters are utilized: a first set representin...
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JP2011091001 |
To provide a method for manufacturing a charged particle beam source which can reliably form a minute projection of an atom level.The method for manufacturing the charged particle beam source covers a tip of a needle-like fine wire made ...
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JP2011086465 |
To provide a gas field ionization ion source capable of discharging heavy ions suitable for processing a sample with a high luminance.The gas field ionization ion source includes a temperature control portion separately controlling a tem...
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JP2011086471 |
To provide a cluster ion beam device that is improved in transport efficiency for a cluster by suppressing the divergence of cluster ions, and to provide a method of adjusting the same.The cluster ion beam device 100 includes: an opening...
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JP2011082181 |
To provide a multimode ionization source that can provide the advantages of combination of a plurality of ion sources, is not subjected to restrictions of individual ion sources, and does not require switching nor manual operation.The mu...
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JP2011082056 |
To provide a method of manufacturing a nanoemitter in a focused ion beam device for readily manufacturing a nanoemitter which includes target extraction voltage.The method of manufacturing a nanoemitter in a focused ion beam device inclu...
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JP2011082152 |
To provide an ion gun having a half-pipe grid which is superior in reproducibility of output characteristics at the time of grid exchange, shape stability accompanying temperature change, and storage performance.The ion gun is provided w...
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JP2011082013 |
To provide an ion source head which has a long service life, even in ion implantation of metal material and carries out ion implantation of high concentration, and to provide an ion implantation device which uses the ion source head.The ...
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JP2011074887 |
To provide a hollow cathode for a spacecraft, facilitating starting (ignition) of discharge.Members have distal ends opposed to a keeper electrode plate 6. The distal ends have a nanocarbon fine projection group structure, a fine project...
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JP2011076736 |
To provide a plasma source having a filament made of tantalum and having little deformation due to its own weight at heating of the filament, and to provide an ion source equipped with the same.The plasma source 2 composing the ion sourc...
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JP2011076937 |
To provide an electrode for an ion source of long lifetime, having high cooling efficiency and superior corrosion resistance.The electrode for an ion source includes a pair of heat-resistant electrode plates 1, 1A, 1B, 3, 3A, and 3B of h...
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JP2011065898 |
To solve the following problem: it is effective that a precipitate including a fluorine compound is exhausted as hydrofluoric acid vapor by generating hydrogen ions by ionizing a hydrogen compound gas and by reacting fluorine and the hyd...
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JP2011066022 |
To provide an ion source and a method capable of using for a new source material (especially, a thermosensitive material such as new deca-borane and hydride, and a dimer containing compound) which is worthy of production, and to attain a...
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JP2011065969 |
To provide an ion source, along with an ion irradiating method, capable of changing the intensity of an ion beam in a wider range than conventional ion sources without using an aperture.An ion source 10a has first and second plasma chamb...
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JP2011065968 |
To provide an ion beam irradiation apparatus capable of controlling the diameter and intensity of an ion beam.An ion beam irradiation device 5 includes an aperture device 20 provided with an aperture opening 51 through which ion beams pa...
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JP2011034888 |
To provide an ion source capable of increasing ion formation amount even though a clean state is maintained and a long service life is made possible.The ion source includes: a plasma chamber 1; a permanent magnet 3 as a generating means ...
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JP2011029077 |
To generate a polarized ion beam using a quantum beat without using optical pumping.This polarized ion beam generating device adopts a means comprising an ion source to generate a non-polarized ion beam, a beam transporting means to ente...
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JP2010287415 |
To suppress the corrosion of a filament and the deflection with its dead weight when heated up to a higher temperature.The filament 4 includes a filament part 6 to be energized and heated to release thermoelectrons, and a cylindrical the...
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