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JP2003100202A |
To provide a manufacturing method of electron-emitting source with a triode structure which enables deposition of a carbon nano-tube precisely over a large area.The manufacturing method comprises steps of: forming a cathode layer on a su...
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JP2003511821A |
A cathode ray tube comprising an electron source and an electron beam guidance cavity having an input aperture and an output aperture, wherein at least a part of the wall of the electron beam guidance cavity near the output aperture comp...
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JP3390562B2 |
PURPOSE: To reduce the power consumption, set the operating voltage lower than commercial power source voltage, facilitate the output control, and reduce the cost by using a new magnetron using a cold cathode as a microwave supplying sou...
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JP2003051247A |
To provide an efficient and economical means to manufacture a field emitter tip within a laminated substrate. The laminated substrate is pattern-molded, by using a standard photograph flat-plate technology and etching is applied, and a r...
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JP2003505833A |
A source of a focused electron beam is provided for use in a cathode ray tube (CRT) or vacuum microelectronic device. A carbon-based field emission cathode, extraction gate and focus lens are formed as an integrated structure using fabri...
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JP2003504803A |
A system for joining at least two beams of charged particles that includes directing a first beam along a first axis into a field. A second beam is directed along a second axis into the field. The first and second beams are turned, by in...
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JP2003031172A |
To provide a deflector forming a storing deflection field with small current which is stable against the temperature variation, slightly affected by eddy current, with small aberration depending on a geometric accuracy of a coil and a co...
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JP2003022761A |
To provide an electron gun and a cathode-ray tube using it, which can decrease voltage applied to an acceleration electrode according to the simple electrode structure of a electron gun, even if a diameter of a electronic beam passage ho...
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JP2003502818A |
A cathode ray tube comprising an electron source and an electron beam guidance cavity having an input aperture and an output aperture, wherein at least a part of the wall of the electron beam guidance cavity near the output aperture comp...
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JP2003017405A |
To provide an electron discharge lithography device by using a selectively grown carbon nanotube electron discharge source, and to provide the lithography method.An electron discharge lithography device includes an electron discharge sou...
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JP2003016914A |
To provide a field emission type electron source element for high performance color picture tube to which high resolution is required.An electrode structure having a convergence effect is arranged proximity to the vicinity of an extracti...
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JP2003016913A |
To provide an electron emitting element capable of converging an emitted electron path and being driven at low voltage, and excellent in responsiveness, a manufacturing method thereof, an electron source, and an image forming device capa...
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JP3361735B2 |
It is so adapted that a sample is mounted on three-dimensional stages through a sample holder and a beam light emitted from a beam light oscillator is applied to a sample surface through a polarizing element different from polarization o...
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JP3359677B2 |
System to control the form of a charged particle beam. The particle beam emanates from a source (58) of these particles. This source is associated with a collecting electrode which collects the particles. The system comprises at least on...
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JP2002541623A |
Systems and method are described for addressable field emission array (AFEA) chips. A plurality of individually addressable cathodes are integrated with an electrostatic focusing stack and/or a plurality of detectors on the addressable f...
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JP2002536808A |
A microwave modulable field-effect cathode which includes at least one array of emissive tips. A microwave modulation signal is produced by a device including a microwave-controllable semiconductor modulation element which is close to th...
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JP2002536802A |
A field emission device (110, 210, 310, 410) includes an electron emitter (124), a first dielectric focusing layer (122) defining a first aperture (127), and a second dielectric focusing layer (123) defining a second aperture (133). Seco...
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JP2002260546A |
To provide an electron emission source which is capable of manufacturing at low cost, and improving operating stability and characteristics.This electron emission source 102 comprises a flat emission region 114 for generating electron em...
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JP2002529901A |
A high power switching apparatus comprises an annular cathode having a surface capable of emitting a hollow electron beam therefrom and an anode cavity spaced from said cathode. The cavity has an annular opening smaller in dimension than...
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JP3322183B2 |
An electron gun provides an improved focusing characteristic of electron beams surely and effectively, and permits position alignment to be relatively easy in assembling thereof. In an electron gun which includes a cathode for dischargin...
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JP2002528878A |
A variable spot size x-ray tube comprises a cathode having an electron emitting surface providing an electron beam that travels essentially along the tube axis of symmetry to an anode. The anode, spaced from the cathode, includes a targe...
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JP2002237251A |
To realize a cold electron emitting element capable of emitting uniformly in one direction electrons emitted from an emitter without being deflected.In this electron emitting element having a field effect transistor(FET) formed on the su...
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JP2002203472A |
To provide a field emission type electron source element, an electron gun and a cathode-ray tube device each capable of generating an electron beam having small distortion on a display surface and capable of keeping a stable electron emi...
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JP2002519814A |
An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surfa...
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JP3296427B2 |
To provide a driving method for a field emission type cold cathode element capable of disusing or reducing horizontal deflection magnetic field distribution and vertical deflection magnetic field distribution and suppressing distortion o...
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JP3296398B2 |
To provide a field emission type cold cathode device and its manufacture capable of sufficiently restraining the spread-out of electron beam without complicating a manufacturing process. The recessed portion on the substrate 35 side of a...
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JP2002517881A |
The invention is directed to an extremely low-capacitance device for shaping an electron beam. The device is based on a ceramic body having a monolithic multi-layer structure. The manufacture of the ceramic body ensues with the assistanc...
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JP3293605B2 |
To provide an electron gun having a field emission type cold cathode for preventing cracks in the second insulating membrane caused by excess stress on the focusing electrode and insulating membrane to secure the electrical reliability b...
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JP3293571B2 |
To restrict the generation of fluctuation in the emission current by including a means for controlling the number of electron to be emitted from an emitter while applying the voltage higher than the voltage to be applied to an emitter to...
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JP2002517065A |
A process for manufacturing a micropoint electron source with an extraction grid and a focusing grid. This process allows for precise alignment of the holes of the extraction grid with the apertures of the focusing grid by using a single...
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JP2002150922A |
To provide a manufacturing method of a cold cathode field electron emitting element which is capable of electron emission of a further lower field and can make the forming temperature of the electron emitting part to be low temperature, ...
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JP3282602B2 |
To restrict the periodic expansion of the electron beam in the continuous periodic magnetic field by providing magnets for forming a magnetic field in parallel with a negative electrode and the center axis of an electrode while using the...
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JP2002134000A |
To provide an electron emitting device having a low gate reactive current which can be preferably used for a power amplifier having a high input resistance, a linear transfer characteristic and a high mutual conductance.The electron emit...
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JP3268237B2 |
To enhance a repetitive frequency to take out an electron beam, and make it suitable for taking out an electron beam of high energy by embedding passages making a refrigerant flow to forcedly cool a conductive vessel in a wall of the con...
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JP3269575B2 |
PURPOSE: To enable the correction of chromatic imaging errors in a simple construction by arranging an electrostatic mirror conjugatedly to two symmetrical planes of a deflecting system, and imaging the two symmetrical planes mutually wi...
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JP2002083559A |
To provide an electron gun capable of improving the focusing characteristic of a cathode-ray tube by reducing the working area of a cathode, a cathode-ray tube equipped with this electron gun and having a good focusing characteristic, an...
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JP2002083555A |
To provide an electron source device for emitting a thinly focused electron beam.This self-aligned electron source device includes novel structure and material for an electron emitting device. This device can be used in a newest memory s...
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JP3266503B2 |
To obtain an optimum trade-off between control and emission current, and provide a field emission element having an improved mutual conductance by positioning a gate edge in almost the central point between the tip of a cathode emitter a...
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JP3264775B2 |
PURPOSE: To provide a stable electron beam with good reproducibility in a short time by forming a suppresser electrode from either titanium whose hydrogen content is not greater than a predetermined amount or an alloy composed chiefly of...
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JP2002033066A |
To provide a capacitor electrode capable of preventing the generation of minute discharge between a grounding electrode.This electron gun is provided with a filament 1 for emitting the electron, a suppresser electrode 2 surrounding the f...
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JP2002503019A |
A lateral-emitter field emission device (10) has a gate (60) that is separated by an insulating layer (80) from a vaccum- or gas-filled microchamber environment (20) containing other elements of the device (10). For example, the gate (60...
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JP2002025426A |
To provide a filed emission display element and its manufacturing method which is made so as to enhance the field emission efficiency by optimizing the conditions at each processing step, through structuring of a thin-film cathode type e...
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JP2002502092A |
A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to thos...
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JP3246137B2 |
PURPOSE: To easily manufacture a field emitting cathode having a focusing electrode. CONSTITUTION: A cathode electrode layer 2, a resistance layer 3, a first insulating layer 4, a gate electrode layer 5, and a mask layer 6 are laminated ...
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JP3245948B2 |
PURPOSE: To form a tapered edged on the cathode of a micro-vacuum element with good reproducibility and uniformity. CONSTITUTION: An SOI substrate is used as a starting substrate, and a (100) silicon single crystalline layer 1 on the sub...
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JP2002501281A |
An apparatus for high speed gating of electric current based on the resonant interaction of tunneling electrons with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses ...
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JP2002500809A |
An electron beam source includes a cathode having an electron emission surface including an active area for emission of electrons and a cathode shield assembly including a conductive shield disposed in proximity to the electron emission ...
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JP2001357773A |
To provide an electric field emission array and its manufacturing method, which utilize a carbon nanotube and which can take the place of an existing microchip as an electron emitting source.In the field emission array and the manufactur...
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JP2001351512A |
To provide a manufacturing method for a field emission cathode capable of increasing brightness and narrowing the spread of electron beams.This manufacturing method for a field emission cathode is composed of a process for forming plural...
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JP2001526446A |
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the condu...
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