| Document |
Document Title |
|
WO/2024/080530A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
|
|
WO/2024/077416A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The machining control method for a semiconductor device comprises: acquiring an integrated circui...
|
|
WO/2024/081473A1 |
Examples are disclosed relate to using an inhibitor with a silicon oxide ALD deposition process to refill recesses in STI regions. One example provides a method of processing a substrate. The method comprises depositing an inhibitor on t...
|
|
WO/2024/081015A1 |
Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and imp...
|
|
WO/2024/081176A1 |
Plasma parameters at a surface of a wafer are determined with a plasma hypermodel based on plasma processing conditions. A post-processing profile can be predicted for the surface of the wafer with a feature-scale profile model. Correlat...
|
|
WO/2024/077586A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a pixel point recognition policy, recognizing, from an i-th lay...
|
|
WO/2024/078912A1 |
A charged particle-optical element for a charged particle-optical module configured to direct charged particles along at least one beam path, the charged particle-optical element comprising: a substrate comprising at least one aperture f...
|
|
WO/2024/081735A1 |
An antenna assembly, comprising: an antenna; a dielectric enclosure surrounding the antenna; and a Faraday shield, disposed around the antenna, and arranged between the antenna and the dielectric enclosure, wherein the Faraday shield com...
|
|
WO/2024/080531A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
|
|
WO/2024/078910A1 |
A stack of planar elements for a charged particle-optical module configured to project charged particles along a beam path, the stack comprising: a pair of adjoining planar elements arranged across the beam path, wherein one of the plana...
|
|
WO/2024/078821A1 |
A charged particle assessment system comprising: a charged-particle beam apparatus configured to direct a charged particle beam onto a sample so that secondary particles and backscattered particles are generated in response to the charge...
|
|
WO/2024/078063A1 |
A plasma etching apparatus, a dielectric window heating device and a system. In the present invention, a heating element is wrapped by a heat conductor; on one hand, the heat of the heating element can be directly transferred to a dielec...
|
|
WO/2023/141162A8 |
Semiconductor processing tools with wafer back-side processing capabilities are disclosed. Such tools may be configured to only contact wafers being processed through edge contact, as opposed to underside/planar contact. Such tools may a...
|
|
WO/2024/078739A1 |
A multi -beam charged particle system and a method of operating a multi-beam charged particle system can provide improved image contrast. The multi-beam charged particle system comprises a filter element or an active array element in a d...
|
|
WO/2024/081816A1 |
Systems and methods for capturing and processing image data captured by an optical microscope, such as an Open Top Light Sheet (OTLS) microscope are disclosed. Image data can be processed by techniques including flat fielding, image dept...
|
|
WO/2024/080532A2 |
The present invention relates to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and manufacturing methods therefor and, particularly, to plasma-resistant glass, an inner chamber component fo...
|
|
WO/2024/078227A1 |
Provided in the specific embodiments of the present invention are an organosilicon nanometer hydrophobic film layer and a preparation method therefor. The organosilicon nanometer hydrophobic film layer is formed by the plasma polymerizat...
|
|
WO/2024/081087A1 |
A bimetallic faceplate for substrate processing is provided including a plate having a plurality of gas distribution holes and formed of a first metal having a first coefficient of thermal expansion, the plate having at least one groove ...
|
|
WO/2024/074173A1 |
The invention relates to the provision of a suitable interior for a near-atmospheric-pressure operating mode and a vacuum-pressure operating mode of an entrance portion of a material analysis system. The entrance portion comprises a hous...
|
|
WO/2024/076767A1 |
Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck includes a ceramic plate; a plurality of electrodes disposed in the ceramic plate, wherein the plurality of electrodes in...
|
|
WO/2024/074314A1 |
A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each ...
|
|
WO/2024/076477A1 |
A showerhead for a substrate processing chamber configured to perform bulk deposition includes a faceplate, a backplate, and a faceplate. The faceplate defines a first plenum corresponding to center and middles zones and a second plenum ...
|
|
WO/2024/076679A1 |
A metal-containing photoresist film may be deposited on a semiconductor substrate. Unintended metal-containing material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, exposure, baking, ...
|
|
WO/2024/076357A1 |
Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic se...
|
|
WO/2024/074202A1 |
A mask (100) for masking a rear of an edge of a substrate (10) is described. The mask comprises a frame (110) having an opening (111) for receiving the substrate, wherein the frame has a protrusion (112) provided at an inner side (110A) ...
|
|
WO/2024/076410A1 |
A method of plasma processing includes delivering direct current voltage to a substrate holder including an upper side configured to support a substrate disposed within a plasma processing chamber. The upper side is divided into a plural...
|
|
WO/2024/074929A1 |
The techniques described herein relate to a method for etching an ashable hard mask (AHM) on a substrate. The method includes forming a plasma from a gas mixture, wherein the gas mixture includes hydrogen peroxide vapor with a concentrat...
|
|
WO/2024/074292A1 |
A charged particle-optical module (41) for directing charged particles along a path towards a sample location, the charged particle-optical module comprises: a plurality of planar elements or electrodes (61-64) arranged across the path a...
|
|
WO/2024/069463A1 |
A device for transforming between an azimuthal phase and a linear phase in a charged particle beam A device for transforming between an azimuthal phase and a linear phase in a charged particle beam (10), the device comprising a first pha...
|
|
WO/2024/072668A1 |
A processing chamber includes a first portion, including a dome, and a second portion. The dome includes a ceramic material and is elliptical in shape. A pedestal to process a substrate is arranged in the second portion. A showerhead is ...
|
|
WO/2024/067666A1 |
Embodiments of the present application provide a dry etching device and method. The dry etching device comprises a vacuum reaction chamber; a workpiece disc driven by a rotating assembly and a plasma excitation source emitting plasma to ...
|
|
WO/2024/073448A1 |
Cooling systems featuring cooling manifolds with features that conform to the shape of an electrical component to be cooled are provided herein. Such cooling manifolds may be connected with a cooling fluid source, such as a clean dry air...
|
|
WO/2024/068547A1 |
Charged particle beam devices, e.g., for repair tasks, are subject to disturbances. A sensor output of one or more sensors is used to compensate the disturbances, e.g., while executing a manipulation mode for repairing defects on a litho...
|
|
WO/2024/072646A1 |
The disclosure relates to a substrate support assembly and apparatus for measuring the temperature of a substrate disposed on the support assembly. In one embodiment, a substrate temperature measurement apparatus includes a substrate sup...
|
|
WO/2024/072755A1 |
A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an o...
|
|
WO/2024/072762A1 |
A multistage acrylic composition comprises a first stage acrylic polymer and a final stage acrylic polymer formed on or around the first stage acrylic polymer. The first stage acrylic polymer comprises structural units of at least one or...
|
|
WO/2024/072496A1 |
Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, sp...
|
|
WO/2024/068426A1 |
A method for evaluating a scanning electron microscope (SEM) system is provided, comprising accessing an SEM image of two or more sets of overlay targets, wherein each set of overlay targets comprises buried features and top features, th...
|
|
WO/2024/072701A1 |
A method and apparatus for cooling a semiconductor chamber are described herein. A semiconductor chamber component, includes a powered region, a grounded region, and a fluid conduit disposed within the semiconductor chamber component and...
|
|
WO/2024/068252A1 |
The present invention provides a charged particle apparatus for projecting multiple beam grids of charged particle beams towards a plurality of samples. The apparatus comprises: a stage configured to support a plurality of samples at res...
|
|
WO/2024/072564A1 |
A method of processing a substrate that includes: flowing dioxygen (O2) and a hydrogen-containing gas into a plasma processing chamber that is configured to hold the substrate, the substrate including an organic layer and a patterned etc...
|
|
WO/2024/071299A1 |
This suction device is attached to a bottomed cylindrical container. The suction device comprises a suction part, a suction machine, a suction tube, and a filter. The suction part has a suction port and is attached to an opening of the c...
|
|
WO/2024/066034A1 |
The present invention provides an electron detector and an electron detection system. The electron detector comprises: a Faraday cage, which is used for collecting secondary electrons; an electron multiplier, which is fixed to an outer s...
|
|
WO/2024/072777A1 |
The disclosure relates to a substrate support assembly for reducing the evacuation time when using argon gas. In one embodiment, a substrate support assembly includes a porous plug within the substrate support assembly. The porous plug i...
|
|
WO/2024/073272A1 |
Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include deposit...
|
|
WO/2024/067082A1 |
A hot air transfer duct, a hot air system and a semiconductor process device. The hot air transfer duct comprises a hot air input structure (12) and/or a hot air output structure (19). The hot air input structure (12) comprises an input ...
|
|
WO/2024/068043A1 |
The invention discloses a multi-beam particle microscope. It comprises, among other things, a particle source 301, which is configured to emit charged particles, and it comprises a multi-aperture arrangement 305, which is configured to g...
|
|
WO/2024/071578A1 |
A magnetron sputtering apparatus according to an embodiment of the present invention may comprise: a chamber in which a sputtering gas is held and which provides an inner space where a workpiece is placed; an ion source unit which includ...
|
|
WO/2024/068269A1 |
The invention relates to a method for processing a body (20), in particular a mirror body of an EUV mirror, in which an ion beam (18) is directed to a surface (21) to be processed of the body (20) in order to remove material from the sur...
|
|
WO/2024/072565A1 |
An insulator that has a helical protrusion spiraling around the shaft is disclosed. A lip is disposed on the distal end of the helical protrusion, creating regions on the shaft that are shielded from material deposition by the lip. By pr...
|
