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WO/2023/147406A2 |
Methods and systems for calibrating a transmission electron microscope are disclosed. A fiducial mark on the sample holder is used to identify known reference points so that a current collection area and a through-hole on the sample hold...
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WO/2023/146664A1 |
Bias supplies and plasma processing systems are disclosed. One bias supply comprises an output node, a return node, and a power section coupled to the output node and the return node. A resonant switch section is coupled to the power sec...
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WO/2023/145015A1 |
In the present invention, film qualities of deposited semiconductor film, insulating film, and the like are inspected in a non-contact manner. This inspection device (1) for inspecting the film quality of a film formed on a sample (16) h...
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WO/2023/141145A1 |
Embodiments of the present disclosure generally relate to composite PVD target. The target has a diameter, a connection face, a substrate face opposite the connection face, a thickness between the connection face and the substrate face, ...
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WO/2023/141227A1 |
Energy is generated from pulsed electric power sources applied to a gas medium that includes hydrogen. A sealed reactor chamber contains hydrogen. A plasma power supply, such as a DC, AC, or RF power supply, generates a plasma inside the...
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WO/2023/139631A1 |
The present invention improves the degree of freedom in the disposition position of an electric field deflector, and prevents occurrence of chromatic aberration.　This charged particle beam device comprises electric field deflectors 130...
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WO/2023/139066A1 |
A method for monitoring a characteristic of a surface while an atmospheric-pressure dual-frequency plasma discharge is impinging on the surface. The method comprises receiving a signal emitted from the plasma discharge impinging on the s...
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WO/2023/139668A1 |
The present invention provides a charged particle beam device capable of suppressing the influence of charging of a sample on electron trajectories, and achieving both high accuracy and high throughput. This charged particle beam device ...
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WO/2023/141022A1 |
A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of th...
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WO/2023/141162A1 |
Semiconductor processing tools with wafer back-side processing capabilities are disclosed. Such tools may be configured to only contact wafers being processed through edge contact, as opposed to underside/planar contact. Such tools may a...
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WO/2023/140953A1 |
An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam t...
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WO/2023/136913A1 |
A method for performing a plasma etch process is provided. The method initiates with receiving a substrate into a chamber. A high frequency (HF) RF signal is generated, said HF RF signal being pulsed in at least a three-state cycle inclu...
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WO/2023/136607A1 |
The present invention provides a plasma treatment apparatus for a powder, whereby the powder is plasma treated by means of a plasma reactor in which an electrode is installed. The plasma treatment apparatus comprises: a chamber in which ...
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WO/2023/136814A1 |
A barrier seal ring for use in a plasma chamber includes an outer seal leg extending vertically down from a top surface to a bottom surface along an outer diameter and an inner seal leg extending down from the top surface to an inner dia...
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WO/2023/137360A1 |
A monolithic graphite heater for heating a thermionic electron cathode includes first and second electrically conductive arms, each one of the first and second electrically conductive arms having an electrode mount at a proximal end, a t...
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WO/2023/137275A1 |
Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM or other memory device. The feature is etched in dielectric material, which of...
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WO/2023/136923A1 |
A radio frequency (RF) generator includes a RF power source configured to output an RF power signal, and a controller coupled to the RF power source. The controller is configured to generate a pulse to modulate the RF power signal of the...
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WO/2023/136606A1 |
The present invention provides a plasma treatment device for plasma-treating powder in a plasma reactor in which electrodes are installed, the plasma treatment device for powder comprising: a chamber having an inner space in which powder...
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WO/2023/132889A1 |
A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrod...
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WO/2023/132549A1 |
The present invention relates to an apparatus for processing a substrate, the apparatus comprising: a chamber which includes a lid on top; a first plate which is installed under the lid and in which a plurality of gas holes is formed; a ...
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WO/2023/131710A1 |
Plasma power supply system (1) for a plasma processing system (60) with a first plasma source (16ab) and a second plasma source (16cd), both in adjacent sections (6ab, 6cd) of one plasma chamber (6) where a substrate (10, 10a, 10b) may b...
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WO/2023/131570A1 |
Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the...
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WO/2023/132861A1 |
Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a process...
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WO/2023/132401A1 |
The present invention provides a substrate processing apparatus. The substrate processing apparatus comprises: a chamber having a first space and a second space communicating with the first space; a plasma source generating plasma in the...
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WO/2023/132402A1 |
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first body; a second body which is different from the first body; and a sealing unit which seals the connect...
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WO/2023/132887A1 |
Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide ...
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WO/2023/129315A1 |
A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high- press...
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WO/2023/122831A1 |
Examples of an electron gun with a moving cathode station and a moving anode station are described. The moving cathode has a driver that moves the station and comprises a plurality of cathodes with a plurality of bias cups to control a t...
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WO/2023/128119A1 |
According to the present invention, disclosed is an electrical variable capacitor circuit and a semiconductor processing system comprising same. The semiconductor processing system of the present invention comprises: an RF power supply, ...
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WO/2023/127083A1 |
A charged particle beam device according to the present invention comprises: an inclining mechanism driving unit that generates driving force; an incline driving force transmission unit that transmits said driving force; and an inclining...
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WO/2023/128764A1 |
The present invention relates to an apparatus (10) for plasma enhanced chemical vapour deposition, comprising: a reaction chamber (11); and at least one linear plasma source assembly (12) comprising (i) at least one linear antenna (13) a...
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WO/2023/129198A1 |
A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system furth...
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WO/2023/129366A1 |
A transformer coupled capacitive tuning (TCCT) match network includes coarse and fine adjustment circuits. The coarse adjustment circuit receives a first RF signal and includes a first tune variable capacitance circuit and a first load v...
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WO/2023/129218A1 |
A RF power generator has a RF power source configured to generate an output signal. A power splitter is configured to receive the output signal and generate a plurality of split signals. A demagnetizing circuit is configured to receive t...
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WO/2023/128627A1 |
According to one embodiment of the present specification, provided is a plasma process system for a multi-station, comprising: a process chamber including at least two stations; one plasma generator per station; one inverter per plasma g...
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WO/2023/126124A1 |
Methods and apparatus are disclosed for patterning a target layer by selectively removing material. In one arrangement, the target layer is irradiated with a patterned beam. The patterned beam generates a plasma in a plasma pattern that ...
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WO/2023/126116A1 |
Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated a...
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WO/2023/128325A1 |
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may comprise: a process treatment unit that provides a treatment space in which the substrate is treated; and a plasma generatio...
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WO/2023/116081A1 |
Disclosed is a flexible mounting and connecting structure, which is used for connecting a first plate body and a second plate body with different thermal expansion coefficients. The flexible mounting and connecting structure is provided ...
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WO/2023/117245A1 |
Methods of processing a sample and charged particle assessment systems are disclosed. In one arrangement, a sample is processed using a multi-beam of sub-beams of charged particles. At least a portion of a sub-beam processable area is pr...
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WO/2023/116630A1 |
The present invention relates to the field of energy chemical industry, and disclosed are a gliding arc plasma reactor, and a method for converting methane by means of plasma. The reactor comprises a reactor cavity and a gliding arc plas...
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WO/2023/121772A1 |
A fastening assembly for fastening a beam blocker to an extraction plate, the fastening assembly including a mounting pin having a shaft portion, a base portion at a first end of the shaft portion, and a head portion at a second end of t...
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WO/2023/117280A1 |
The present invention concerns a method of determining alignment of electron optical components in a charged particle apparatus. The charged particle apparatus comprising: an aperture array and a detector configured to detect charged par...
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WO/2023/117277A1 |
Electron-optical devices and associated methods are disclosed. In one arrangement, an electron- optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined r...
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WO/2023/116896A1 |
The present invention relates to a method and apparatus for removing particles of an ion beam etching system. A layer of metal grid mesh is additionally provided at a bottom portion of a reaction cavity of an ion beam etching system, whe...
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WO/2023/121945A1 |
An electrostatic chuck for a substrate includes a baseplate including a first surface and a cavity arranged on the first surface. A top plate includes a first plug. A first spring member is arranged in the cavity. A second plug is arrang...
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WO/2023/117266A1 |
There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The...
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WO/2023/121428A1 |
An embodiment of the present invention provides: a packaging container including a housing portion that can accommodate an object to be treated, wherein the housing portion includes a transmission portion through which gas can pass throu...
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WO/2023/115572A1 |
The embodiments of the present application relate to the technical field of plasma processing. Provided are a component preparation method and a plasma processing apparatus, which are used for solving the problem of how to improve the du...
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WO/2023/118734A1 |
The present invention relates to a method for producing a substchiometric oxygen layer from titanium, vanadium, tungsten or molybdenum oxide on a substrate by magnetron sputtering a target in a chamber, the method being characterised in ...
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