| Document |
Document Title |
|
WO/2023/117285A1 |
Systems and methods of removing a contaminant from an emitter tip of an electron source in an electron beam apparatus are disclosed. An electron beam apparatus may include an electron source comprising an emitter tip configured to emit e...
|
|
WO/2023/121773A1 |
An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to ...
|
|
WO/2023/117262A1 |
A system and a method for volume inspection of semiconductor wafers with increased throughput is provided. The system and method are configured for a milling and imaging of reduced number or areas of appropriate cross-sections surfaces i...
|
|
WO/2023/117489A1 |
A system and a method for volume inspection of semiconductor wafers with increased throughput is provided. The system and method is configured for a milling and imaging of reduced number or areas of appropriate cross-sections surfaces in...
|
|
WO/2023/119619A1 |
Electron irradiation from a cleaner that uses electrons dissociates hydrocarbon-based gas, which is a precursor to contamination, causing deposition of carbon on members inside a specimen chamber and on a specimen surface, thereby contam...
|
|
WO/2023/117173A1 |
An electron, microscope (100) is described. The electron microscope comprises an electron source (110) for generating an electron beam, a condenser lens (130) for collimating the electron beam downstream of the electron source, and an ob...
|
|
WO/2023/117238A1 |
A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput is provided. The measuring method utilizes a modified machine learning algorithm to extract measurement results from...
|
|
WO/2023/114457A1 |
Aspects of the present disclosure involve a power supply circuit for powering a plasma reactor and more specifically initiating and maintain a plasma therein, and that can operate with power from an intermittent power source. The power s...
|
|
WO/2023/114410A1 |
Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to sup...
|
|
WO/2023/114145A1 |
A gas delivery apparatus includes an inlet portion and an outlet portion. The inlet portion can comprise a plurality of inlet ports configured to receive gas from a gas source. The inlet portion can also comprise a corresponding pluralit...
|
|
WO/2023/110331A1 |
A charged-particle optical apparatus configured to project a multi-beam of charged particles, the apparatus comprising: a charged particle device switchable between (i) an operational configuration in which the device is configured to pr...
|
|
WO/2023/109480A1 |
Provided in the present invention are an inductive coupled coil, a radio frequency provision apparatus, a radio frequency control method and a plasma processing device. The inductive coupled coil comprises an inner coil, a middle coil, a...
|
|
WO/2023/114028A1 |
Electrostatic chucks for use in substrate processing chambers are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes: a dielectric plate having an electrode disposed therein, t...
|
|
WO/2023/114166A1 |
An electron bombardment ion source assembly for use in a mass spectrometer and including an anode extending along an axis and surrounding an ionization volume. At least two filaments are each configured to thermionically emit electrons a...
|
|
WO/2023/112742A1 |
This electron beam irradiation device comprises: an acceleration tube (13) formed by providing, side by side in an axial direction (L1), a plurality of acceleration electrodes for generating an electric field for accelerating an electron...
|
|
WO/2023/114143A1 |
A radiofrequency (RF) power supply system includes a first coil and a second coil. The RF power supply system also includes a first RF power source connected to supply RF signals of a first frequency to both the first coil and the second...
|
|
WO/2023/114082A1 |
An assembly for a processing chamber of a substrate processing system includes a first component, a second component, and a thermal interface material arranged between the first component and the second component. At least one of the fir...
|
|
WO/2023/110284A1 |
Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the meas...
|
|
WO/2023/110862A1 |
An electron microscope (1) serves for examining a specimen (2). An electron optical unit (3) serves for passing an image of a specimen region of interest to a detection device (5). A removal device (6) serves for removing material from t...
|
|
WO/2023/112131A1 |
This ion milling device has: an ion source (101) for emitting an ion beam; a sample stage (102) for holding a sample (105); a shielding plate (106) for blocking the ion beam and arranged so that an end surface (P2) thereof is aligned wit...
|
|
WO/2023/114233A1 |
A method of etching a substrate that includes: generating a first plasma from a first gas flowing into a first chamber by applying a first power pulse to a first electrode located in the first chamber over a first time duration; and form...
|
|
WO/2023/114088A1 |
A chamber component for a semiconductor processing chamber includes a body. The chamber component also includes a coating. The coating is a corrosion-resistant coating. The coating is deposited on a surface of the body. The corrosion-res...
|
|
WO/2023/110444A1 |
The present invention provides a detector inspection device for interrogating at least part of a detector comprised in a charged particle-optical assessment apparatus, the detector inspection device comprising: a coupler configured to be...
|
|
WO/2023/111650A1 |
The invention relates to the magnetron deposition of protective and functional coatings comprised of magnetic materials, and more particularly to the structure of a target made of a magnetic material. In the claimed target made of a magn...
|
|
WO/2023/110316A1 |
A charged-particle apparatus generates a plurality of sub-beams from a source beam of charged particles and direct the sub-beams downbeam toward a sample position. The charged-particle apparatus comprises a charged particle source, an ap...
|
|
WO/2023/113973A1 |
Embodiments disclosed herein include, a sensor for detecting radical ion flux. In an embodiment, the sensor comprises a first resistor, where the first resistor comprises a length of wire of a first catalytic composition. In an embodimen...
|
|
WO/2023/110244A1 |
A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is confi...
|
|
WO/2023/110907A1 |
A method of image template matching with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the ...
|
|
WO/2023/114022A1 |
A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing cham...
|
|
WO/2023/113995A1 |
An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes ma...
|
|
WO/2023/113180A1 |
The present invention relates to an apparatus and method for activating a chemical reaction using a plasma expanded by a double high frequency, wherein the bulk of a plasma can be expanded using a double high frequency, and a chemical re...
|
|
WO/2023/110105A1 |
A cathode assembly (110) for sputter deposition is provided. The cathode assembly includes a first cathode drive unit (113) configured to rotate a first rotatable cathode (111), a second cathode drive unit (114) adjacent to the first cat...
|
|
WO/2023/107263A1 |
A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure b...
|
|
WO/2023/107314A1 |
Methods and systems for multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of RF puls...
|
|
WO/2023/105632A1 |
This multiple lens comprises an air-core cylindrical non-magnetic material bobbin provided with a plurality of slits, and a metal conductor. The plurality of slits are disposed such that the central angle between adjacent slits is (360/1...
|
|
WO/2023/107463A1 |
A device for supplying a coolant to a substrate processing chamber includes a block including a plurality of surfaces and a plurality of passages defined within the block. The device includes an input port located on a first surface to r...
|
|
WO/2023/107228A1 |
In an embodiment, a plasma processing tool with an extendable probe is described. In an embodiment, the plasma processing tool comprises a chamber, and a pedestal for supporting a substrate. In an embodiment, an edge ring is around a per...
|
|
WO/2023/108039A1 |
Presented are systems, methods, and devices for provisioning sample support, controlled liquid deposition, and/or desired sample thicknesses during cryo-electron microscopy processes. A sample support for a cryo-electron microscopy proce...
|
|
WO/2023/102776A1 |
The present invention relates to the technical field of system software, and in particular relate to an MPCVD control system. The control system comprises a main control system and a plurality of slave systems, wherein the main control s...
|
|
WO/2023/107347A1 |
A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The metho...
|
|
WO/2023/107264A1 |
A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plu...
|
|
WO/2023/107203A1 |
A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processi...
|
|
WO/2023/107260A1 |
Embodiments disclosed herein may further comprise a semiconductor processing tool. In an embodiment, the tool comprises a chamber with a chuck within the chamber. In an embodiment, the chuck is an electrostatic chuck. The tool may furthe...
|
|
WO/2023/107205A1 |
Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and control...
|
|
WO/2023/099757A1 |
The process according to the invention is a process for depositing a coating on a substrate by means of physical vapor deposition methods, comprising a step of depositing said coating on said substrate by the simultaneous use of high-pow...
|
|
WO/2023/099642A1 |
The invention provides a method for regioselective functionalizing a surface of an electron microscopy grid (10), therefore: a) providing a surface (20) of an electron microscopy grid (101); b) providing a plurality of wall systems (30A,...
|
|
WO/2023/102435A1 |
Semiconductor devices and methods of forming semiconductor devices are described. A method of forming metal silicon nitride films is disclosed. Some embodiments of the disclosure provide a process using ammonia plasma for treating a meta...
|
|
WO/2023/099290A1 |
The present invention relates to an apparatus and a method for imaging and/or analysing and/or processing a sample by means of electrically charged particles, for example using a transmission or scanning electron microscope. The aim of t...
|
|
WO/2023/101709A1 |
A wide-coverage edge ring configured to be arranged above a bottom ring in a substrate processing chamber includes an upper surface, a lower surface that includes a lower surface step that extends downward from the lower surface and is c...
|
|
WO/2023/099125A1 |
The disclosure relates to a distribution body (1) for distributing a process gas (7) relative to a substrate (9) to treat the substrate (9) by means of the process gas (7), comprising a distribution plate (2), at least one gas inlet chan...
|
