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WO/2010/015235 |
The invention relates to a method for separating two articles (1, 2) which are bonded to each other via at least one adhesive layer (3), at least one electron beam (6) being guided on the surface of at least one of the articles along the...
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WO/2010/016394 |
Provided is a charged particle gun (30) comprising a charged particle source (1), a first outgoing electrode (131) fixed in the distance from the charged particle source (1), a second outgoing electrode (132) arranged on the opposite sid...
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WO/2010/015385 |
A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) com...
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WO/2010/016505 |
A sample conveying mechanism which minimizes damage to a sample such as particularly a photomask (17). A sample conveying mechanism provided with a sample holding mechanism for holding and suspending a sample, wherein portions (either a...
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WO/2010/013331 |
An electron beam device has a beam current detector for detecting the variations of the position to which an electron beam is irradiated during non-irradiation to a substrate when executing the drawing of drawing data, a beam position er...
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WO/2010/012293 |
The invention relates to a pulse generator for sputtering systems, by means of which pulses having constant current flow at least in phases can be generated, and a method for exciting and/or generating a plasma by means of such pulses. T...
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WO/2010/014850 |
An apparatus for use with an electron beam for imaging a sample. The apparatus has a down-conversion detector configured to detect an electron microscopy signal generated by the electron beam incident on the sample, a direct bombardment ...
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WO/2010/014850 |
An apparatus (10) for use with an electron beam (30) for imaging a sample (26). The apparatus has a down-conversion detector (14) configured to detect an electron microscopy signal (32) generated by the electron beam incident on the samp...
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WO/2010/014252 |
A grid holder (100) for STEM analysis in a charged-particle instrument has a base jaw (120) and a pivoting jaw (130). Both jaws (120, 130) have a substantially congruent inclined portion (127, 135). The base jaw (120) has a flat portion ...
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WO/2010/014252 |
A grid holder (100) for STEM analysis in a charged-particle instrument has a base jaw (120) and a pivoting jaw (130). Both jaws (120, 130) have a substantially congruent inclined portion (127, 135). The base jaw (120) has a flat portion ...
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WO/2010/011252 |
An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed wit...
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WO/2010/010771 |
Provided is a charged corpuscular ray apparatus for acquiring tilted series images of a micro specimen for a short time period. The charged corpuscular ray apparatus previously measures the relation between a focal shift and a coinciden...
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WO/2010/008467 |
An ion implantation system (100) comprising an ion source (116) configured to generate an ion beam (104) along a beam path (136), a mass analyzer (130) is located downstream of the ion source wherein the mass analyzer is configured to pe...
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WO/2010/008307 |
The subject of the invention is a electron detector unit and a scanning electron microscope equipped with this unit, destined particularly for detection of low energy secondary electrons at the pressures range from values lower than 0.1 ...
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WO/2010/008455 |
An ion implantation system (100) configured to produce an ion beam (210) is provided, wherein an end station (216) has a robotic architecture (250) having at least four degrees of freedom. An end effector (229) operatively coupled to the...
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WO/2010/008307 |
The subject of the invention is a electron detector unit and a scanning electron microscope equipped with this unit, destined particularly for detection of low energy secondary electrons at the pressures range from values lower than 0.1 ...
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WO/2010/008924 |
Disclosed are charged particle systems that include a tip (504), at least one gas inlet (512a-f) configured to supply gas particles to the tip, and a element (506) having a curved surface (514) positioned to adsorb un-ionized gas particl...
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WO/2010/008924 |
Disclosed are charged particle systems that include a tip (504), at least one gas inlet (512a-f) configured to supply gas particles to the tip, and a element (506) having a curved surface (514) positioned to adsorb un-ionized gas particl...
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WO/2010/008469 |
An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber (422, 216) that encloses an array of individually controlled gas jets (402, 506), wherein the gas pressure of the indi...
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WO/2010/008455 |
An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectiv...
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WO/2010/007368 |
An ion source is disclosed wherein a sample is introduced into the sample chamber (1) of the ion source in the gas phase via a sample introduction capillary tube (2). The sample is directed onto a heated surface (6) coated with an oxidis...
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WO/2010/008458 |
A system (200) and method for magnetically filtering an ion beam (210) during an ion implantation into a workpiece (228) is provided, wherein ions are emitted from an ion source (212) and accelerated the ions away from the ion source to ...
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WO/2010/008924 |
Disclosed are charged particle systems that include a tip, at least one gas inlet configured to supply gas particles to the tip, and a element having a curved surface positioned to adsorb un-ionized gas particles, and to direct desorbing...
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WO/2010/008467 |
An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion...
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WO/2010/003266 |
A vacuum processing system with a vacuum chamber (1) has an inlet (14), at least first and second outlets (3, 4), exhaust means (13) at a first of said outlets (3, 4) and a remote plasma source RPS, wherein the RPS is attached to a conne...
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WO/2010/004275 |
A sample holder for use in a method of analysis using high-energy radiation, includes a frame (4) having a window (6) and a membrane (2) that extends across the window and has a surface (8) for supporting a sample. The membrane is substa...
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WO/2010/004275 |
A sample holder for use in a method of analysis using high-energy radiation, includes a frame having a window and a membrane that extends across the window and has a surface for supporting a sample. The membrane is substantially transpar...
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WO/2010/002632 |
A system and method to fabricate magnetic random access memory is disclosed. In particular, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction ...
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WO/2010/001953 |
The structure of an acceleration tube is simplified and voltage distribution of the acceleration tube is smoothed. The acceleration tube of a device, such as an electron source device and an ion device, is composed of a semiconductive m...
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WO/2010/001790 |
Provided is a charged particle beam device wherein a secondary signal generated from an alignment pattern having known coordinate values in a sample coordinate system is detected, and a positional deviation quantity between the coordinat...
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WO/2009/157182 |
In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the tim...
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WO/2009/158249 |
A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source ...
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WO/2009/157358 |
A transmission electron microscope apparatus (1) is provided with an electron gun (2), a convergent lens (4), plural sample stages (20, 21) on which plural samples (18, 19) are disposed, a sample movement control unit (22) for moving the...
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WO/2009/156242 |
A methodof manufacturing field-emitter arrays by a molding technique is described, wherein the shape of the mold holes (113) is uniformly controlled to obtain field emitter tips having diameters below 100 nm and blunted side edges. The m...
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WO/2009/156121 |
The invention relates to an arrangement for coating tape-shaped film substrates, comprising an unwinding reel and a winding reel, between which the film substrate is guided so as to be subjected to tensile stress, and a coating station t...
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WO/2009/157054 |
[PROBLEMS] To provide a multicolumn electron beam exposure apparatus, which generates a strong magnetic field in a small space and reduces an interval between column cells, and to provide a magnetic field generating apparatus. [MEANS FOR...
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WO/2009/153939 |
Provided is a charged particle beam apparatus, which can emit a stable electron beam, having high brightness and a narrow energy width. The charged particle beam apparatus comprises a field emission electron source, electrodes for apply...
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WO/2009/155266 |
A method and apparatus for detecting a wafer-level arc in a plasma process chamber. The method includes, for example, monitoring a waveform of a signal supplied to the plasma process chamber; detecting a feature in the waveform; responsi...
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WO/2009/155272 |
A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of def...
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WO/2009/154953 |
The disclosure relates to sample inspection using an ion-beam microscope. In some embodiments, the disclosure involves the use of multiple detectors, each of which provides different information about a sample.
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WO/2009/154953 |
The disclosure relates to sample inspection using an ion-beam microscope. In some embodiments, the disclosure involves the use of multiple detectors, each of which provides different information about a sample.
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WO/2009/154953 |
The disclosure relates to sample inspection using an ion-beam microscope. In some embodiments, the disclosure involves the use of multiple detectors, each of which provides different information about a sample.
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WO/2009/155166 |
Techniques for measuring ion beam emittance are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring ion beam emittance. The apparatus may comprise a measurement assembly compris...
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WO/2009/154954 |
Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, He-3 is used.
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WO/2009/154954 |
Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, He-3 is used.
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WO/2009/154631 |
Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance ...
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WO/2009/155166 |
Techniques for measuring ion beam emittance are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring ion beam emittance. The apparatus may comprise a measurement assembly compris...
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WO/2009/155272 |
A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of def...
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WO/2009/155272 |
A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of def...
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WO/2009/155275 |
Disclosed herein are methods that include: (a) exposing a cross-sectional surface (5010) of a channel (5020) formed in a sample (5000) to particles from a charged particle source (5005) to cause a first plurality of particles (5035) to l...
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