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Patent Searching and Data


Matches 751 - 800 out of 66,307

Document Document Title
WO/2018/109489A1
A method of charge mitigation in additive layer manufacturing is provided, which uses a charged particle beam (103) to fuse metal powder (122) within a metal powder bed (123) to form a product layer-by-layer, the method comprising using ...  
WO/2018/108432A1
The invention relates to a device, a method and a use for the coating of lenses, wherein the lenses to be coated are arranged in pairs above parallel, tubular targets. The distance of the targets to each other and/or in relation to the l...  
WO/2018/111598A1
Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal t...  
WO/2018/108240A1
The present disclosure provides an apparatus (100) for holding a substrate (10) in a vacuum deposition process. The apparatus (100) includes a support surface (112), an electrode arrangement (120) having a plurality of electrodes (122) c...  
WO/2018/106386A1
Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of ...  
WO/2018/106761A1
A system and method for imaging a biological sample using a freezable fluid cell system is disclosed. The freezable fluid cell comprises a top chip, a bottom chip, and a spacer to control the thickness of a vitrified biological sample. T...  
WO/2018/104689A1
The invention relates to a modular microwave plasma-assisted deposition reactor (1) for manufacturing synthetic diamond, said reactor being characterised in that it comprises a least three modulating elements, said modulating elements be...  
WO/2018/106833A1
An electron-optical system for performing electron microscopy is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a source lens, a condenser lens and an objective ...  
WO/2018/106955A1
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second va...  
WO/2018/106407A1
Embodiments of the present disclosure generally relate to abatement for semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to techniques for foreline solids formation quantification. In on...  
WO/2018/099756A1
A method for inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device having an optical axis. The method includes generating a primary charged particle beam; illuminating a multi-aperture...  
WO/2018/102088A1
A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of t...  
WO/2018/102143A1
A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to t...  
WO/2018/102364A1
The present invention provides a method for plasma dicing a substrate (100). The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas (120) and at least one de...  
WO/2018/100014A1
A variable voltage generator circuit is described for generating, from a substantially constant supply voltage VS, a variable high-voltage control voltage VC for a variable power capacitor (1) having a variable-permittivity dielectric. T...  
WO/2018/099156A1
A vacuum condition processing apparatus(100) is provided, the top of which is connected to an external charged particle beam generating device(200), and the apparatus includes: a suction cup(101) in contact with the specimen(113) to be o...  
WO/2018/099805A1
The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip (120, 127, 130...  
WO/2018/099854A1
A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; ill...  
WO/2018/100473A1
An end-block (100) for use in a deposition apparatus, for connecting a cylindrical consumable target (150) with magnetic bar, to an outside of the deposition apparatus, comprising at least drive means to provide a relative movement betwe...  
WO/2018/096610A1
The purpose of the present invention is to provide a charged-particle beam device capable of eliminating foreign matter adhered on an electric field correction electrode (201) disposed in an outer peripheral portion of a measurement samp...  
WO/2018/096145A1
Disclosed is a method comprising the irradiation of a wafer (8) by means of an ion beam (2) that passes through an implantation filter (6), the ion beam (2) being electrostatically deviated in a first direction and a second direction in ...  
WO/2018/094982A1
A method for inducing and exciting a radio frequency plasma with laser in a low air pressure environment. In the method, hardware comprises a pulse laser light source (1), a convex lens (3), a target material (5), an ion source system (6...  
WO/2018/098002A1
Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber 300. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination w...  
WO/2018/096235A1
This electrode (1), with which an apparatus furthermore possessing a holder (102) for the substrate, a counter-electrode and means (120, 121, 122) for injecting a plasma gas towards this holder, is equipped comprises a body (2) made from...  
WO/2018/098004A1
Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advant...  
WO/2018/094903A1
A vacuum condition controlling apparatus (104), the top of which is connected with an electron beam generating instrument. The apparatus is rotationally symmetric, comprises the following parts deployed outward from the central axis: the...  
WO/2018/098100A1
Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering targe...  
WO/2018/096575A1
The invention addresses the problem that, in order to perform an observation in situ with a charged-particle beam device, an observer, who is not an expert in charged-particle beam devices, needs to maintain an ever-changing observation ...  
WO/2018/095514A1
The present disclosure provides an apparatus (100) for layer deposition on a substrate (10). The apparatus (100) includes a vacuum chamber (101), at least one sputter source (110) in the vacuum chamber (101), wherein the at least one spu...  
WO/2018/097263A1
Provided is an arc vaporization source capable of increasing reaching efficiency, at which charged particles emitted from a target reach a subject. An arc vaporization source 1A that supplies charged particles toward a predetermined base...  
WO/2018/091888A1
Methods and apparatus for applying atomic hydrogen to an object are disclosed. In one arrangement, the method comprises passing atomic hydrogen through a membrane and onto a portion of an object that is spaced apart from the membrane. Th...  
WO/2018/094064A1
The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate (170). The method comprising a process chamber (100) being provided that is operatively connected to a plasma source (1...  
WO/2018/092115A1
Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber ...  
WO/2018/093537A1
Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas i...  
WO/2018/094383A1
A technique for estimating a whole object surface area and volume of a micro-scale three-dimensional model with a partially visible surface includes receiving a single-view stereoscopic image of an object of interest and an unconstrained...  
WO/2018/093874A1
Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and th...  
WO/2018/092050A1
Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered s...  
WO/2018/093157A1
The present invention relates to an electron gun which maintains a vacuum by sealing a vacuum exhaust line connection portion after vacuum evacuation and comprising a getter in the electron gun and which is exchangeable, and an electron ...  
WO/2018/093414A1
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer assoc...  
WO/2018/093191A1
The present invention relates to a glass frit composition for melt-coating for ceramics for plasma resistance and a method for forming a coating layer. More specifically, the present invention provides a method for preparing ceramics for...  
WO/2018/091797A1
This unit comprises a housing (50) for receiving an electrode suitable for creating an electrical discharge, and first means (20, 21, 22) for injecting treatment gas, comprising at least one plasma-forming gas, towards the support of the...  
WO/2018/094024A1
Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat trans...  
WO/2018/094022A1
Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annu...  
WO/2018/090618A1
Disclosed are a microwave transmission apparatus and a semiconductor processing device, the apparatus comprising a waveguide (1) and an impedance matching structure (2) arranged in the waveguide (1). The waveguide (1) is used for transmi...  
WO/2018/087594A1
An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion s...  
WO/2018/087026A1
The invention relates to a plasma indicator for detecting a plasma treatment, particularly with a plasma jet (22), preferably under atmospheric gas pressure. The plasma indicator can comprise a thin, plate-shaped sheet (12), particularly...  
WO/2018/086697A1
According to one aspect of the present disclosure, an apparatus for vacuum deposition on a substrate is provided. The apparatus comprises: a vacuum chamber (110) comprising a first side wall (112) with a first pump opening (113) and a se...  
WO/2018/087593A1
An ion implanter (200) is provided that includes an ion source (210) configured to generate an ion beam and an analyzer magnet (202) defining a chamber (204) having a magnetic field therein. The chamber provides a curved path between a f...  
WO/2018/089180A1
A method for suppressing arcing in helium distribution channels of an electrostatic chuck in a plasma processing chamber, wherein the electrostatic chuck is connected to a voltage source for providing a chucking voltage and wherein the p...  
WO/2018/086698A1
A holding arrangement (100) for holding a substrate (101) is described. The holding arrangement includes a body (110) having a first wall (120) of flexible material; an adhesive arrangement (130) configured for attach ing the substrate, ...  

Matches 751 - 800 out of 66,307