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WO/2022/173557A1 |
A confinement ring for use in a plasma processing chamber includes an upper horizontal section, a vertical section, and a lower horizontal section. The upper horizontal section extends between an upper inner radius and an outer radius of...
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WO/2022/173451A1 |
A device detects traces of explosive materials, weapons, firearms, knives or drugs. The device is used a stand-alone device or coupled to an explosive detector using mass spectrometry or ion mobility spectrometry technologies. The device...
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WO/2022/173577A1 |
A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column and an x-ray detector, the method comprising: ide...
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WO/2022/173626A1 |
Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the p...
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WO/2022/173536A1 |
Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein. The substrate support...
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WO/2022/173549A1 |
Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assemb...
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WO/2022/171697A1 |
The invention relates to a method to stabilize position and shape of a plasma beam established between a cathode and an anode, where an electrical field is established between the cathode and the anode and where the shortest electrical f...
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WO/2022/173612A1 |
Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting...
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WO/2022/171702A1 |
The invention relates to a method for suppressing anode overgrowth in an arc-beam PICVD coating system, wherein during at least part of a coating process of the arc-beam PICVD coating system, the arc-beam is scanned over at least part of...
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WO/2022/173543A1 |
Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma cham...
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WO/2022/173720A1 |
An adjustable probe for plasma diagnostics is disclosed that includes a probe body extending along a probe axis, and a probe head adjustably coupled to the probe body and having a probing surface configured to contact a plasma in a plasm...
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WO/2022/171738A1 |
The invention relates to a power supply device (1) for generating an electric high-frequency power signal for a plasma, comprising a power generator (2) and an impedance adjustment arrangement (6) connected to the power generator (2), wh...
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WO/2022/173695A1 |
A dielectric window assembly for a substrate processing system includes a dielectric window, a Faraday shield that is one of adjacent to the dielectric window, embedded within the dielectric window, and arranged in a recess in an upper s...
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WO/2022/169515A1 |
A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion ...
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WO/2022/169518A1 |
A method for achieving a first uniformity level in a processing rate across a surface of a substrate is described. The method includes receiving the first uniformity level to be achieved across the surface of the substrate and identifyin...
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WO/2022/169653A1 |
An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second d...
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WO/2022/169706A1 |
A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source ele...
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WO/2022/166626A1 |
An electron beam irradiation enhancement apparatus, comprising an electron beam source (1) and a sample (8), wherein the sample (8) is located below the electron beam source (1), the electron beam source (1) comprises a fixing housing, a...
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WO/2022/169125A1 |
Provided is a lift pin assembly. In an embodiment, the lift pin assembly may comprise: a driving member; a horizontal bar that is raised and lowered vertically by the driving member; at least one pin support member which moves vertically...
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WO/2022/169963A1 |
A power supply circuit includes a switchabie match, a high and a low voltage bus connectable to the load such that the load is in series between the busses, at least two capacitors having a fixed capacitance connectable between the high ...
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WO/2022/169827A1 |
Plasma generation systems and methods with enhanced electrical insulation properties are disclosed. The system can include a plasma source having a plasma chamber, and a gas supply unit configured to supply process gas into the plasma ch...
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WO/2022/169707A1 |
In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio ...
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WO/2022/164365A1 |
An angle-resolving photoelectron spectrometer and a method for such a spectrometer is described. The spectrometer comprises an electrostatic lens system (101) having a first end (1) and a second end (2), and being arranged to form a beam...
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WO/2022/162863A1 |
Provided is a lamella mounting method with which an improvement in transport throughput can be achieved. This lamella mounting method includes: (a) a step of using nano-tweezers 62 to grip a lamella 10 fabricated on a portion of a wafer ...
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WO/2022/164447A1 |
A cathode drive unit (100) for a deposition system is described. The cathode drive unit (100) includes a motor (110) having a drive shaft. (111). Further, the cathode drive unit (100) includes a gearbox (120) connected to the drive shaft...
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WO/2022/164661A1 |
A system and method including a processing device. The processing device receives data including a first set of plasma exposure values each associated with a respective plasma element of a plurality of plasma elements designed to generat...
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WO/2022/164525A1 |
An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF sig...
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WO/2022/161740A1 |
The invention relates to a method for forming at least one layer (3) on a substrate (2) made of a fluoridic material, comprising: depositing at least one coating material (9) on the substrate (2) to form the layer (3), and generating a p...
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WO/2022/163101A1 |
Provided are a light-emitting element, an optical detection module, a manufacturing method for the light-emitting element, and a scanning electron microscope using the light-emitting element, the light-emitting element being capable of r...
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WO/2022/164076A1 |
The present invention relates to a substrate treatment apparatus comprising: a chamber; a substrate support portion which supports at least one substrate in the chamber; a first spray portion which sprays a first gas toward the substrate...
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WO/2022/165400A1 |
A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the a...
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WO/2022/165397A1 |
An electrostatic analyzer includes a cylindrical body having an inner cylinder and an outer cylinder that are coaxial with one another along a longitudinal axis of the cylindrical body. An inner cylindrical electrode is positioned on an ...
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WO/2022/164729A1 |
A system including a control plate disposed within a processing chamber. The control plate includes a set of plasma elements designed to independently expose a substrate disposed within the processing chamber to plasma related fluxes. Th...
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WO/2022/159183A1 |
A method of cleaning residue containing ruthenium (Ru) residue on at least one surface of a component of a semiconductor processing chamber is provided. The residue is exposed to a Ru cleaning composition comprising at least one of hypoc...
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WO/2022/159633A1 |
A radial magnetron system for plasma surface modification and deposition of high-quality coatings for multi-dimensional structures is described. The system includes an axial electrode, a target material disposed on a portion of the axial...
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WO/2022/156495A1 |
A gas inlet assembly (1) of a process chamber (7) in semiconductor processing equipment, a gas inlet apparatus, and semiconductor processing equipment. The gas inlet assembly (1) is used for delivering a process gas into a gas inlet pipe...
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WO/2022/157647A1 |
A wafer having μLEDs is inspected using cathodoluminescence microscopes. A fast scan is enabled by splitting the CL beam into several beams and sensing the beams with point detectors. Optical filters are inserted in the optical path ups...
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WO/2022/159883A1 |
Methods for gap filling features of a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a no...
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WO/2022/157908A1 |
To increase processing reproducibility, an ion milling device 100 comprises a sample chamber 107, a sample stage 102 that is arranged inside the sample chamber and in which a sample is placed, an ion source 101 that emits unfocused ion b...
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WO/2022/159596A1 |
Inductively coupled plasma (ICP) RF power delivery systems are disclosed that include at least two ICP coils. At least one of the ICP coils is directly driven by an RF resonant power amplifier that includes a resonant tank comprising the...
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WO/2022/156463A1 |
An electrostatic chuck and a semiconductor processing device, the electrostatic chuck comprising an insulating layer (1) and a temperature adjustment structure (2), wherein the insulating layer (1) is provided with a direct current elect...
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WO/2022/159278A1 |
Semiconductor-processing chamber components and methods for making the components are presented. One component includes a base including a metallic material, a metal matrix composite (MMC) layer, and a dielectric layer. The MMC layer at ...
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WO/2022/151939A1 |
Disclosed in the present invention is a semiconductor process chamber, comprising a chamber, a housing, a dielectric window, a coil, a hot air hood, and an air passage structure. The housing covers an opening; the dielectric window is ar...
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WO/2022/154240A1 |
A cleaning method of the present invention is a method for cleaning a deposition chamber for depositing a metal oxide semiconductor material, characterized by comprising: an activation step of activating a plurality of chlorine-based gas...
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WO/2022/153793A1 |
A purpose of the present invention is to provide a photomask correction device with which it is possible to smoothly perform a film process so that a deposition film, which is a pattern film of a photomask, has suitable light transmittan...
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WO/2022/153932A1 |
The present invention efficiently measures and corrects a deviation amount between a column center position and a center position of a mask on a stage. An adjustment method for a charged particle beam rendering device according to one as...
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WO/2022/155306A1 |
The present invention provides an improved technique for cryogenically fixing biological samples in amorphous ice for analysis by cryo-electron microscopy (cryo-EM). Analyte particles are cooled to very low temperatures prior to depositi...
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WO/2022/154218A1 |
A system for detecting an abnormal operation of a plasma generating apparatus, according to an embodiment of the present disclosure, the system comprises: a plasma generating apparatus including one or more nozzle units configured to dis...
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WO/2022/154968A1 |
Embodiments of the present disclosure generally relate to Inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducin...
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WO/2022/153367A1 |
The present invention provides an aberration correction device comprising first and second multipoles forming a hexapole field and transfer optics formed from a plurality of round lenses, wherein the transfer optics are disposed between ...
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