| Document |
Document Title |
|
WO/2021/001383A1 |
The subject of the invention is a pulsed generator of electrically charged particles comprising: a vacuum chamber (V); said generator being characterized in that: the vacuum chamber (V) is configured to maintain an internal operating pre...
|
|
WO/2020/229638A3 |
The device for implanting particles into a substrate (12) comprises a particle source (2) and a particle accelerator (4) for producing an ion beam (10) consisting of positively-charged ions. The device also comprises a substrate mount (3...
|
|
WO/2021/003319A1 |
Some embodiments include a plasma system that includes a plasma chamber; an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MFiz; a nanosecond pulser driving pulses into the plasma chamber with a p...
|
|
WO/2021/001115A1 |
Disclosed among other aspects is a phaseplate (210) for a charged particle inspection system including configured and arranged to modify the local phase of charged particles in a beam (600) to reduce the effects of lens aberrations. The ...
|
|
WO/2021/001919A1 |
In a charged particle beam device comprising: an objective lens that generates a magnetic field near a specimen; and a booster electrode, an insulator is disposed between the magnetic field lens and the booster electrode, with a tip port...
|
|
WO/2021/001916A1 |
A charged particle beam system provided with a computer system for controlling the accelerating voltage of a charged particle beam emitted from a charged particle source, said charged particle beam system comprising a first aperture grou...
|
|
WO/2021/003235A1 |
Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the wo...
|
|
WO/2021/002717A1 |
The present invention relates to a combined silicone ring for a semiconductor etching apparatus, wherein the silicone ring is separated and assembled vertically and outwardly, thus making it possible to replace only those components that...
|
|
WO/2021/001935A1 |
The purpose of the invention is to provide a charged particle beam device such that sample observation employing boosting is less susceptible to unnecessary leakage of a magnetic field onto the trajectory of a charged particle beam emitt...
|
|
WO/2021/002753A1 |
A plasma delivery apparatus, comprising: a plasma source provided in an outer face of the delivery apparatus, the outer face arranged for facing a substrate to be treated; a transport mechanism configured to transport the substrate and t...
|
|
WO/2021/003070A1 |
Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed aroun...
|
|
WO/2021/002605A1 |
The present invention relates to a substrate processing apparatus including a first electrode and a second electrode, the positions of which can be adjusted in advance in consideration of the difference of thermal expansion rates, so as ...
|
|
WO/2021/001536A1 |
The invention refers to a cathodic arc evaporation apparatus comprising: - a target (3) which has a target surface (3') comprising an active surface (3'') from where material can be evaporated in a cathodic arc process; - a confinement (...
|
|
WO/2021/002305A1 |
The present invention provides: an emitter composed of an hafnium carbide (HfC) single crystal and emitting electrons stably with high efficiency; a method for producing same; an electron gun using same; and an electronic device. An emit...
|
|
WO/2021/003458A1 |
The present invention provides for a high voltage direct current power supply including a primary high voltage direct current supply offering a primary output; a floating secondary output floating with respect to the primary output and f...
|
|
WO/2021/003224A1 |
A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precu...
|
|
WO/2021/001932A1 |
The purpose of the invention is to provide an electron beam device such that there is a reduction in the time it takes for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an ult...
|
|
WO/2021/003031A1 |
Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emiss...
|
|
WO/2020/264571A1 |
A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, be...
|
|
WO/2020/263726A1 |
The present disclosure relates to plasma generation systems particularly applicable to systems which utilize plasma for semiconductor processing. A plasma generation system consistent with the present disclosure includes an arc suppressi...
|
|
WO/2020/264158A1 |
Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide- containing chemistry such as a hydrogen halide. A metal -containing r...
|
|
WO/2020/260094A1 |
The present invention relates to a sputtering target comprising a NiSi alloy comprising from 2 to 8 weight% Si, and to a process for forming said sputtering target.
|
|
WO/2020/263673A1 |
An RF plasma generator configured to ignite and maintain a plasma from one or more processing gases is disclosed. A switch mode power supply is configured to convert a DC voltage from a DC power source to an RF voltage. A resonance circu...
|
|
WO/2020/263690A1 |
Embodiments of a substrate support are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a lower assembly having a base plate assembly, wherein the base plate assembly includes a...
|
|
WO/2020/260743A1 |
A substrate processing apparatus (100) and a related method, comprising a reaction chamber (130) and a plasma in-feed line (115) where plasma species is introduced into the reaction chamber (130) for a deposition target (160). The plasma...
|
|
WO/2020/263513A1 |
Embodiments disclosed herein include a particle collection trap for an abatement system for abating compounds produced in semiconductor processes. The particle collection trap includes a device for producing spiral gas flow in the partic...
|
|
WO/2020/259795A1 |
A method of depositing a material on a substrate is described. The method includes sputtering at least a component of the material from a first rotary target with a first magnet assembly and a second rotary target with a second magnet as...
|
|
WO/2020/263443A1 |
A beamline architecture including a wafer handling chamber, a load-lock coupled to the wafer handling chamber for facilitating transfer of workpieces between an atmospheric environment and the wafer handling chamber, a plasma chamber cou...
|
|
WO/2020/263401A1 |
A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of...
|
|
WO/2020/225453A3 |
A scanning electron microscope having an electron column positioned to direct an electron beam onto a sample the electron column having a vacuum enclosure; an electron source; and an electromagnetic objective lens positioned within the v...
|
|
WO/2020/257144A1 |
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electr...
|
|
WO/2020/254497A1 |
The present invention relates to a method for preparation of polymer, preferably a polyurethane, having improved antibacterial properties and/or antiviral properties comprising: a) providing a polymer substrate having a surface; b) gener...
|
|
WO/2020/254627A1 |
The invention relates to electron microscopy (EM) supports for in situ cryo-electron tomography, particularly to contactless and mask-free photo-micropatterning of EM grids for site-specific deposition of extracellular matrix-related pro...
|
|
WO/2020/257324A1 |
Embodiments disclosed herein generally relate to methods of forming thin film transistors (TFTs). The methods include forming one or more metal oxide layers and/or poly-silicon layers. A gate interface (Gl) layer is deposited over the on...
|
|
WO/2020/253514A1 |
A lower electrode device and a plasma system. The lower electrode device is used in a plasma system (1), and comprises: a lower electrode (11), and annular electrodes (21A, 21 B and 21 C) arranged around the lower electrode (11), and a r...
|
|
WO/2020/256411A1 |
The present invention relates to a component for manufacturing a semiconductor manufactured by using a CVD method. A SiC structure formed by the CVD method according to one aspect of the present invention is used such that the SiC struct...
|
|
WO/2020/257518A1 |
An ion beam lens and methods for combining ion beams are disclosed. Embodiments combine hyperthermal ion beams and can include layered three-dimensional electrodes with passageways through the electrodes, each electrode having a specifie...
|
|
WO/2020/257314A1 |
Embodiments of the present disclosure generally relate to methods of making thin-film transistors (TFT). More specifically, embodiments described herein relate to a method of depositing an insulating layer using inductively coupled plasm...
|
|
WO/2020/254425A1 |
The invention concerns a radio-frequency plasma generating system comprising a radio-frequency generator (1) and a plasma source, the radio- frequency generator (1) being inductively or capacitively coupled to the plasma source through a...
|
|
WO/2020/257223A1 |
A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y trans...
|
|
WO/2020/254927A1 |
A vacuum exhaust system and method of evacuating a plurality of chambers (10) is disclosed. The vacuum exhaust system is within a clean room and comprises: a plurality of branch process gas channels (14) each configured to connect to a c...
|
|
WO/2020/256899A1 |
Systems and methods for compensating for radio frequency (RF) power loss are described. One of the methods includes conducting a no plasma test to determine a resistance associated with an output of an impedance matching circuit. After c...
|
|
WO/2020/249221A1 |
An electron detector comprises a sensor module (1) comprising a sensor (11) for detecting electrons, and an electronics module (2) comprising circuitry (21,22) for processing signals received from the sensor module (1). Wiring (4) is pro...
|
|
WO/2020/251148A1 |
The present invention relates to a substrate processing device and a substrate processing method. A substrate processing device according to one embodiment of the present invention comprises: a chamber; a susceptor positioned on the insi...
|
|
WO/2020/249182A1 |
The present document discloses a gas inlet device (21, 21a-21k) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (233), and a side wall (234, 235) extending in a down...
|
|
WO/2020/251652A1 |
Embodiments are described for modules, multi-stage systems, and related methods for radio frequency (RF) power amplifiers with reduced size and weight requirements. Fluid cooling is incorporated directly into the power amplifier (PA) mod...
|
|
WO/2020/252020A1 |
A component for use in a plasma processing chamber is provided. A metal containing component body is provided. A sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one...
|
|
WO/2020/250604A1 |
The purpose of the present invention is to provide an electron gun which can directly monitor the intensity of an electron beam emitted from a photocathode with only the configuration equipped on the electron gun, an electron beam applyi...
|
|
WO/2020/251881A1 |
Described herein are RF components with a modified surface material to improve chemical resistance and decrease metal contamination within processing chambers. Also disclosed herein are methods of manufacturing and using the same. Some e...
|
|
WO/2020/249879A1 |
The invention concerns a method for coating a substrate (31) with tantalum nitride using a high-power pulsed magnetron sputtering technique, wherein a tantalum target is used and wherein the coating of the substrate (31) is carried out i...
|
