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WO/2018/069299A1 |
The invention relates to a plasma treatment device comprising a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma ...
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WO/2018/068833A1 |
According to one aspect of the present disclosure, a magnet arrangement (100) for a sputter deposition source is provided. The magnet arrangement comprises a first magnet (110) and a second magnet (120) adapted to confine a plasma in a p...
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WO/2018/069147A1 |
An apparatus for moderation of positrons comprises a positron trap (10), a positron source arranged in the positron trap (10), and a moderator (22) arranged in the positron trap (10) in such a manner that positrons emitted from the posit...
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WO/2018/068506A1 |
A charged particle beam system includes: a particle source (101), a column (103) and a specimen chamber (105) with a first movable vacuum window (106). The particle source (101) is configured to generate a charged particle beam (102) whi...
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WO/2018/070324A1 |
In the present invention, a part of a sample where nanoparticles are to be quantitatively observed with precision by an electron microscope (TEM, SEM), an atomic force microscope (AFM), etc., is selected by a simple method using an optic...
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WO/2018/069438A1 |
A method for working a surface (110), which has an original topology, by means of a particle jet (106), may comprise working the surface (110) by means of the particle jet (106) at a first angle of the particle jet (106) in relation to t...
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WO/2018/071710A2 |
A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly o...
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WO/2018/070635A1 |
An embodiment of the present invention can provide a magnetic field generating device including a three-dimensional coil structure, and a method for manufacturing the same device. A magnetic field generating device including a three-dime...
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WO/2018/071211A1 |
Plasma reactors and methods are provided for reducing the volume of radioactive nuclear wastes or toxic wastes where the surface contamination is the main source of radioactivity or toxicity. The radioactive or toxic wastes are prepared ...
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WO/2018/070010A1 |
Provided is an electron beam apparatus with which it is possible to stably achieve a high spatial resolution even in a case in which low-acceleration observation is performed by using CeB6 in a CFE electron source. In an electron beam ap...
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WO/2018/071181A1 |
A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The d...
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WO/2018/069091A1 |
A sputtering source comprises two facing plate shaped targets (5, 7) and a magnet arrangement (185,187) along each of the targets. An open coating outlet area (12) from the reaction space between the targets is limited by facing rims (9,...
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WO/2018/065315A1 |
The present invention concerns a gas circulation device (1) for conveying a gas into a chemical vapour deposition reactor, comprising a conduit (2) with a first end (4) intended to open into said reactor, being polarised at a radiofreque...
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WO/2018/064157A1 |
An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas to the ion source chamber. An exci...
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WO/2018/062710A1 |
A ground clamping unit for grounding a hollow member having a hollow and a ground load mounted in the hollow comprises: a clamping body having a penetration groove so as to encompass an external part of the ground load; an elastic connec...
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WO/2018/064391A1 |
Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distribut...
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WO/2018/063865A1 |
An apparatus designed to sputter a material onto a plurality of substrates includes a rotating metal frame, a plurality of carriers, and an insulator disposed between the metal frame and the plurality of carriers. The plurality of carrie...
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WO/2018/061960A1 |
The purpose of the present invention is to obtain, in a highly accurate manner and in a short period of time, the exposure intensity distribution on a layer to be shaped. The exposure intensity distribution, when lithography data in whic...
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WO/2018/059609A1 |
A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles (4), the...
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WO/2018/055715A1 |
The problem addressed by the present invention is to provide an electron microscope that can be activated at a suitable temperature by disposing a non-evaporative getter (NEG) at an extraction electrode in the vicinity of an electron sou...
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WO/2018/057396A1 |
In one implementation, a sputtering showerhead assembly is provided. The sputtering showerhead assembly comprises a faceplate comprising a sputtering surface comprising a target material and a second surface opposing the sputtering surfa...
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WO/2018/052083A1 |
The present invention makes it possible to measure a correct inclined state with an electron microscope device, even if the contour of the bottom of a hole in a semiconductor pattern is blocked by a sample surface. This electron microsco...
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WO/2018/052533A1 |
A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing ...
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WO/2018/052575A1 |
Transmission electron microscopes (TEMs) are being utilized more often in failure analysis labs as processing nodes decrease and alternative device structures, such as three dimensional, multi-gate transistors, e.g., FinFETs (Fin Field E...
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WO/2018/050758A1 |
The invention is directed to a plasma post-discharge deposition device (100) for depositing crystalline metal oxide derivative on a substrate (112), said device comprising a gas source (116) with a substrate inlet (102), a post-discharge...
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WO/2018/053487A1 |
Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece (400) comprising a substrate, an intermediary layer (402), a hard mask layer (404), and a photoresis...
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WO/2018/052614A1 |
A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on wh...
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WO/2018/050562A1 |
The invention is directed to a post-discharge plasma coating device (2) for a wired substrate (4) comprising an inner tubular electrode (6) on an inner tubular wall (3) for receiving the substrate (4) and a precursor (8) moving axially i...
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WO/2018/051595A1 |
Provided is an imaging device that is capable of mitigating or preventing positional shifting and changes in the orientation of an imaging unit even when a chamber is deformed due to depressurization inside the chamber. Specifically, thi...
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WO/2018/046079A1 |
The present invention refers to a device for generating charged particle beams with tunable orbital angular momentum. The device firstly includes one or more components for providing a charged particle beam. It is further characterized b...
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WO/2018/048889A1 |
A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes optical elements configured to selectively steer and/or shape the ion ...
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WO/2018/048376A1 |
An axial electron gun comprises a primary cathode (13) and a secondary cathode (20), and is characterized in that in order to maintain the stable position of the secondary cathode (20) relative to the electron-beam axis of the axial gun,...
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WO/2018/048566A1 |
A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ion...
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WO/2018/046293A1 |
A device for examining a non-gaseous sample interacting with gases in an electron- and/or ion-optical system is provided, wherein the sample is arranged in a sample chamber and the sample chamber furthermore has a diaphragm having a hole...
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WO/2018/047228A1 |
In order to provide an electron source having high luminance and a large current, provided is an electron source including a wire-shaped member (201) that has, on the leading end thereof, an electron emission surface having a convex curv...
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WO/2018/048949A1 |
A multi-beam scanning electron microscopy (SEM) system is disclosed. The system includes an electron beam source configured to generate a source electron beam. The system includes a set of electron-optical elements configured to generate...
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WO/2018/041744A2 |
Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller...
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WO/2018/041744A3 |
Systems and methods are provided for dynamically compensating position errors of a sample 350. The system can comprise one or more sensing units 311,321,331 configured to generate a signal based on a position of a sample 350 and a contro...
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WO/2018/042531A1 |
Disclosed is a measuring device that measures a sample by irradiating the sample with a charged particle beam, said measuring device being provided with a particle source, an electron lens, a detector, a stage, a sensor that measures env...
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WO/2018/042897A1 |
The present invention relates to a charged particle beam device wherein a table deformation arising from the movement of a rolling element from a guide can be suppressed via a simple constitution. Provided in the sample stage containing ...
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WO/2018/040588A1 |
Disclosed are a magnetron element and a magnetron sputtering apparatus. The magnetron element comprises a closed magnetron (1) and a non-closed magnetron (2). A closed plasma path (13) is formed between an inner magnetic pole (11) and an...
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WO/2018/042505A1 |
The purpose of the present invention is to provide an electromagnetic deflector that reduces third order and fifth order aberration at a high level, and a charged particle ray device. In order to achieve the aforesaid purpose, there are ...
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WO/2018/040791A1 |
Provided are a surface-tunneling micro electron source and an array and a realization method thereof. The surface-tunneling micro electron source is a multi-region planar structure comprising an insulation substrate (1). One surface of t...
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WO/2018/037444A1 |
Provided is an electron microscope which irradiates a sample with an electron beam to perform observation, the electron microscope comprising: an edge element that is disposed in a diffraction plane, or a plane equivalent thereto, at whi...
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WO/2018/037474A1 |
In order to enable, in a charged particle beam device using a multipole-type aberration corrector, high-speed aberration corrector adjustment in an operation for adjusting the aberration corrector, this charged particle beam device is pr...
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WO/2018/038398A1 |
A pulse power compensation device is disclosed. The present invention can supply a pulse power with a constant voltage without charge droop to a load by additionally installing a pulse power compensation device of a simple circuit struct...
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WO/2018/038578A1 |
Disclosed is a method for the pretreatment and printing of a flexible substrate. The method comprises the steps of: fixing a first pattern mask for the printing of at least one of an electrode and a circuit on the flexible substrate; per...
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WO/2018/039578A1 |
Embodiments disclosed herein generally relate to a pumping system for a plasma processing apparatus. The pumping system includes a first pump path, a second pump path, a first valve, and a second valve. The first pump path couples an ope...
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WO/2018/039055A1 |
Vacuum chambers having inflatable slit valve opening seals are described herein. In one example, a vacuum chamber includes a chamber body, a first inflatable seal, and a first slit valve door. The chamber body has a top, a bottom, and si...
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WO/2018/039315A1 |
Embodiments of the present disclosure relate to a plasma screen used in a plasma processing chamber with improved flow conductance and uniformity. One embodiment provides a plasma screen. The plasma screen includes a circular plate havin...
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