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WO/2019/156964A1 |
A sample support structure for electron microscopy includes a membrane having a film, pillars distributed on the film, and a frame supporting the membrane. The pillars may be distributed across an imaging area of the membrane within a pe...
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WO/2019/156770A1 |
The present disclosure describes a method and apparatus for determining whether components in a semiconductor manufacturing system are authorized for use in that system. By embedding an identification feature in the component, it is poss...
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WO/2019/155540A1 |
In this invention, a charged-particle beam device (110) comprises: a lens barrel (111) having a charged particle source (112); a sample chamber (101) for mounting therein a sample to be irradiated by a charged-particle beam; and a thermi...
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WO/2019/157068A1 |
A microscopy system includes a gas cluster beam system configured for generating a beam of gas clusters directed toward a sample to irradiate a sample and mill away successive surface layers from the sample, a scanning electron microscop...
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WO/2019/155978A1 |
A sputtering device 1 as a substrate treatment device is provided with: a transfer mechanism CMA that transfers a substrate S along a transfer surface; a cathode C that holds a target T; a rotation mechanism RTM that rotates the cathode ...
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WO/2019/155850A1 |
The present invention pertains to an autofocus technique which is for a scanning electron microscope and uses interlace scanning. This autofocus method for a scanning electron microscope: repeatedly scans a sample with an electron beam w...
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WO/2019/156296A1 |
Disclosed are a plasma treatment device comprising a boron carbide coating layer, and a manufacturing method therefor, the device having excellent corrosion resistance against plasma, ensuring the uniformity of plasma distribution, impro...
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WO/2019/154490A1 |
A deposition apparatus (100, 101) for coating a substrate (10, 10b) is described. The deposition apparatus includes a first spool chamber (110) housing a storage spool (112) for providing the flexible substrate (10), a deposition chamber...
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WO/2019/156911A1 |
A method for non-invasively measuring the impedance of a plasma discharge. Parallel anode and cathode electrodes are connected to a DC voltage source that ignites and sustains a plasma between the anode and cathode. A network analyzer ap...
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WO/2019/152528A1 |
Various embodiments include an apparatus to retrofit into an electrostatic chuck (ESC) of an existing plasma-based processing system. The apparatus includes a tube adapter having a dielectric coating formed on an inner surface of the tub...
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WO/2019/151025A1 |
This spatially phase-modulated electron wave generation device which generates spatially phase-modulated electron waves is provided with a laser light output device, a spatial optical phase modulator, and an optical cathode. The optical ...
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WO/2019/149684A1 |
The present invention relates generally to a reusable ion implantation mask useful for repeatedly implanting selected areas of substrates with ions on a large scale. The present invention further relates to a method for partial ion impla...
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WO/2019/149315A1 |
The invention relates to a vacuum chamber or part of a vacuum chamber comprising multiple components, in particular chamber walls and connection flanges, which form the vacuum chamber. The invention also relates to a method for producing...
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WO/2019/149763A1 |
A device (1) for coating a substrate (4) with nanometric sized particles, wherein the device (1) comprises: a plurality of means (2a, 2b, 2c, 2d), called production means, each able to produce a jet (3) of nanometric sized particles, eac...
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WO/2019/152018A1 |
An atom probe directs two or more pulsed laser beams onto a specimen, with each laser beam being on a different side of the specimen, and with each laser beam supplying pulses at a time different from the other laser beams. The laser bea...
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WO/2019/147583A1 |
Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substra...
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WO/2019/145679A1 |
A vacuum apparatus casing (12) to house at least one pumping mechanism or at least one abatement device has internal channelling (60) defining at least one closed heat transfer pathway along which, in use, heat is conducted through the c...
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WO/2019/147450A1 |
In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and o...
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WO/2019/147513A1 |
Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming...
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WO/2019/147097A1 |
The present invention relates to a substrate treatment apparatus comprising: a support part for supporting a substrate; a first electrode part disposed above the support part; a second electrode part disposed above the first electrode pa...
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WO/2019/147371A1 |
Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first...
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WO/2019/148010A1 |
An impedance matching system includes an impedance matching network coupled between an alternating current (AC) generator and electrodes of a plasma chamber. The AC generator generates a multi-level pulse signal of cyclically recurring p...
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WO/2019/141337A1 |
The invention relates to a microwave plasma device, comprising a treatment area and a number of two or more microwave semiconductors. The microwave plasma device is characterised in that the microwave semiconductors are attached to the t...
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WO/2019/143474A1 |
Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having...
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WO/2019/144093A1 |
A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing (154) for supporting an ion source (108) configured to form an ion beam. A gas box (146) within the terminal housing has a hydrogen genera...
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WO/2019/143559A1 |
A pressure barrier comprising a window with a first side and a second side, a main section comprising a length, a first end, and a second end opposite the first end, a first gradient compression section adjacent to the first end of the m...
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WO/2019/143473A1 |
Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The met...
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WO/2019/143873A1 |
These electron beam separator designs address thermally-induced beam drift in an electron-optical system. A heater coil wrapped around the beam separator unit can maintain constant power. Additional coils also can be wrapped around the b...
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WO/2019/143992A1 |
Systems and methods for increasing the RF power switched into a resonant load by achieving voltage multiplication by means of coupled inductors are provided herein. In one approach, the RF electromagnetic wave achieved by voltage multipl...
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WO/2019/140089A1 |
Disclosed are compositions and methods for the conductive fixation of organic material, including biological samples. The compositions and methods described herein can address the problems of charging and sample damage caused by electron...
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WO/2019/139395A1 |
A source matcher of the present invention may comprise: an RF oscillator unit for applying power for plasma generation to a plurality of coils installed in a chamber; an RF matcher unit for matching a load impedance to the characteristic...
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WO/2019/136396A2 |
Components and processes are disclosed herein for managing non-volatile and/or low- volatility byproduct materials that are generated within a plasma processing region of a plasma processing chamber during performance of various plasma-b...
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WO/2019/134328A1 |
A ceramic structure, a lower electrode and a dry etching machine. The ceramic structure (10) comprises at least two ceramic plates (11), and each of the ceramic plates is provided with a clamping groove (111) and a clamping protrusion (1...
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WO/2019/135679A1 |
The present invention is in the field of a vacuum transfer assembly, such as for cryotransfer, and specifically a TEM vacuum transfer assembly, which can be used in microscopy, a sample holder, a vacuum housing, a sample holder stage and...
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WO/2019/131410A1 |
The present invention addresses the problem of providing a sample inspection device in which noise is removed from a detection signal and a generated electron beam is effectively utilized in inspection, and a sample inspection method. A ...
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WO/2019/133302A1 |
Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and su...
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WO/2019/133433A1 |
The invention relates to a method for electron microscopy. The method comprises providing an electron microscope, generating an electron beam and an image beam, adjusting one of the beam and of the beam and the image beam to reduce off-a...
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WO/2019/131875A1 |
The purpose of the present invention is to provide a particle shape analysis method, etc., for analyzing the shape of a fine particulate sample. A particle shape analysis method, in which: a particulate sample (49) is placed on a sample ...
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WO/2019/129988A1 |
The invention relates to an apparatus for manufacturing a three-dimensional object by selective additive manufacturing, comprising, in a chamber, a support for depositing successive layers of additive manufacturing powder, a distribution...
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WO/2019/133272A1 |
Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. T...
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WO/2019/125860A1 |
An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a rad...
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WO/2019/124736A1 |
The present invention relates to a plasma apparatus for dry cleaning semiconductor substrates capable of precisely controlling density and dispersion of reactive active species (radicals) constituting a plasma. The present invention comp...
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WO/2019/120387A1 |
The invention relates to a method for operating a depositing system in which a process layer is deposited (22) onto an object to be coated. Prior to depositing the process layer on the object to be coated, a reactant (42) of an undesired...
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WO/2019/120386A1 |
The invention relates to a method for operating a deposition installation (20) having an exhaust gas section (31) with a vacuum pump (30), wherein a layer (40; 50), which is parasitically deposited on a wall (23) of the exhaust gas secti...
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WO/2019/125186A1 |
An aspect of the invention provides an ion beam sputtering apparatus comprising an ion source configured to generate a hollow ion beam along a beam axis that is located in a hollow part of the beam; and a sputtering target having a targe...
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WO/2019/121883A1 |
A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans ac...
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WO/2019/121899A1 |
The invention relates to a system for controlling the temperature of an electrode. The system comprises at least one heat conduction tube, a coupling element, and a temperature control device. The heat conduction tube is suitable, at lea...
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WO/2019/123604A1 |
In order to control the amount of electrostatic charge on the surface of a sample to a desired value before computation of a frame-integrated image, the present invention provides a configuration comprising a charged-particle beam source...
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WO/2019/125599A1 |
A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or ...
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WO/2019/125680A1 |
A coil assembly for controlling a magnetic field in a plasma chamber is provided herein. In some embodiments, the coil assembly may include a mandrel including an annular body that includes at least one upper body coolant channel and at ...
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