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WO/2024/057973A1 |
The present invention provides an electrostatic chuck and a substrate processing device which suppress residual adhesion of a substrate. Provided is an electrostatic chuck comprising a dielectric body and an electrode provided inside the...
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WO/2024/057588A1 |
Provided is a technology by which the maintenance period of a member provided in an exhaust system can be extended. The present invention is provided with: a treatment chamber for treating a substrate; an exhaust pipe that exhausts an ...
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WO/2024/056193A1 |
A method for manufacturing a SiC semiconductor element (10), comprising the steps of providing a SiC substrate (20) with a SiC epitaxial layer (30) on top, treating the SiC epitaxial layer (30) with plasma immersion ion implantation (PII...
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WO/2024/055348A1 |
Provided in the embodiments of the present application is a conveying device for wafer cassettes. The conveying device comprises a rack and a conveying mechanism, wherein the conveying mechanism comprises two conveying units, which are a...
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WO/2024/059751A2 |
Systems and methods are described herein for manufacturing high-index, low-absorption materials for use in visible light optical metasurfaces. Methods of manufacturing or forming hydrogenated amorphous silicon (a-Si:H), silicon-rich nitr...
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WO/2024/055885A1 |
Provided in the present application are a semiconductor device and a preparation method therefor, which realize ohmic contact between a first electrode layer and an epitaxial layer, reduce the contact resistivity of ohmic contact, are co...
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WO/2024/057528A1 |
According to an embodiment of the present invention, a semiconductor device comprises a first cell including a first PMOS transistor, a second PMOS transistor arranged side by side with the first PMOS transistor, a first NMOS transistor,...
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WO/2024/059450A1 |
Disclosed are integrated circuit structures with buried rails and backside metals for routing input signals to and/or output signals from one or more cells of the integrated circuit structures. Port landing-free connections to input port...
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WO/2024/058355A1 |
The present invention relates to: a semiconductor device having, as a gate dielectric layer, an amorphous fluorinated carbon thin film that has a high dielectric constant, low leakage current, and high insulation strength and is thus use...
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WO/2024/057780A1 |
This laser processing device comprises a support unit for supporting a target object, a light source for emitting laser light, a spatial optical modulator for modulating the laser light by displaying a modulation pattern, a condensing un...
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WO/2024/059234A1 |
Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a hol...
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WO/2024/059467A1 |
START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORM ETCH GAS INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER STOP
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WO/2024/058824A1 |
A processing system includes one or more processing chambers, and a system controller configured to cause the processing system to perform (a) a pre-clean process on exposed surfaces of a semiconductor structure, the semiconductor struct...
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WO/2024/058370A1 |
Disclosed are a nitride substrate having a low dislocation density, and a method for manufacturing same. According to one aspect of the present embodiment, provided is a method for manufacturing a substrate, the method being characterize...
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WO/2024/057792A1 |
This film-like adhesive agent is formed of a resin composition having thermosetting properties and containing a filler, and has a single-layer structure including a first surface and a second surface. The film-like adhesive agent has a r...
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WO/2024/057887A1 |
Provided is a mounting device that acquires position information about a substrate recognition mark and achieves highly accurate mounting, even when a chip component covers the substrate recognition mark in facedown mounting. Specificall...
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WO/2024/058356A1 |
The present invention relates to: a capacitor comprising, as a dielectric film, a thin film of amorphous fluorinated carbon that has a high dielectric constant and a low leakage current and provides a high level of insulation; a manufact...
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WO/2024/057722A1 |
The present invention provides an impurity diffusion composition which contains (A) a polyvinyl alcohol that has a saponification degree of not less than 30% by mole but less than 70% by mole, (B) an impurity diffusion component and (C) ...
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WO/2024/058881A1 |
A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the othe...
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WO/2024/058180A1 |
The present invention relates to a substrate (1) which is for forming a semiconductor device, and has: a diamond substrate (10); and a silicon carbide layer (20) disposed on a portion or the entirety of one surface (10a) of the diamond s...
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WO/2024/057889A1 |
Provided are: a wavelength measurement device which is capable of contributing to efficient measurement by shortening measurement time when measuring a representative wavelength of each light-emitting element chip by causing a plurality ...
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WO/2024/057165A1 |
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device has a plurality of memory cells, a first insulator, and a second insulator disposed on the first insulator. Each of the memory cells has...
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WO/2024/058431A1 |
The present invention relates to: a precursor for forming an yttrium- or scandium-containing thin film, the precursor characterized by including a compound represented by chemical formula 1; a method for forming an yttrium- or scandium-c...
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WO/2024/056127A1 |
The invention relates to a system for handling workpieces A or an arrangement formed of multiple systems of this type. The system according to the invention for handling workpieces A comprises a housing, delimiting a handling chamber B, ...
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WO/2024/055756A1 |
A wafer centering adjustment method, comprising: before a wafer (4) is etched, a wafer centering system (1) confirms whether the circle center of the wafer (4) coincides with the center of a first adsorption platform (3), and if not, the...
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WO/2024/058140A1 |
This semiconductor device is provided with: a semiconductor substrate (10) which has a main surface (10a); a drift layer (31) of a first conductivity type, the drift layer being formed in a main surface (10a)-side surficial part; a drain...
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WO/2024/058025A1 |
The present invention provides: a method for cleaning a semiconductor substrate, by which it is possible to remove (clean), in a shorter time and more cleanly by a simple operation, an adhesive layer that is obtained using, for example, ...
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WO/2024/057698A1 |
The present invention is a single crystal silicon substrate equipped with a nitride semiconductor layer, said substrate including: a single crystal silicon substrate; a 3C-SiC single crystal film that has been epitaxially grown on the si...
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WO/2024/056344A1 |
A nanosheet diode includes a bookend structure and a central structure. The bookend includes a first semiconductor that is doped as one of the anode and the cathode of the diode, and includes a left block, a right block, and a first stac...
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WO/2024/058211A1 |
Provided is a copper bonding wire that makes it possible to improve cutting properties, bonding strength, and following properties, and to suppress wire lift-off and tool detachment. This copper wire is composed of a copper alloy having ...
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WO/2024/058863A1 |
Embodiments of a wet etch process and method are disclosed to provide uniform etching of material formed within features (such as, e.g., trenches, holes, slits, etc.) having different critical dimension (CD). By combining a non-aqueous o...
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WO/2024/057136A1 |
A semiconductor device includes: a first via level forming a bottom jumper configured to provide an output; a first set of two or more first metallization tracks overlying the first via level; a second via level forming a first top jumpe...
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WO/2024/055352A1 |
The transportation device provided in the embodiments of the present application is configured to connect to an air suction pump. The transportation device comprises: a base platform and a sliding assembly, wherein the base platform comp...
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WO/2024/056287A1 |
In at least one embodiment, the housing (2) for an optoelectronic semiconductor chip (3) comprises - a first and a second lead frame part (41, 42), and - a housing body (5) which mechanically connects the lead frame parts (41, 42) togeth...
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WO/2024/058135A1 |
Provided is a technology for reducing residue in developed patterns. Provided is a substrate processing method. This method comprises: (a) a step for providing a substrate having a base film and a metal-containing resist film formed on...
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WO/2024/056345A1 |
A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region (28) located on each side of a function...
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WO/2024/057613A1 |
This electrical connection device comprises probes and a probe head that has a configuration in which a first guide plate and a second guide plate each having guide holes formed therein are arranged spaced apart from each other along a d...
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WO/2024/055492A1 |
A preparation method for a semiconductor structure. The method comprises: forming a first substrate, the first substrate comprising a first base, and active regions which are provided in the first base and are arranged in an array in a f...
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WO/2024/058624A1 |
The present invention relates to: a precursor for forming a lanthanide metal-containing thin film, the precursor being characterized by comprising a compound represented by chemical formula 1; a method for forming a lanthanide metal-cont...
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WO/2024/058820A1 |
A method of forming a partially silicided element is provided. A silicided structure including a silicide layer on a base structure is formed. A dielectric region is formed over the silicided structure. The dielectric region is etched to...
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WO/2024/056404A1 |
The present application discloses embodiments of an air cushion assembly. In one embodiment, the air cushion assembly (10) includes at least a base having at least one base air cushion surface (14), at least one carriage (20) having at l...
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WO/2024/055700A1 |
Disclosed in the present invention are a plastic packaging module, a plastic packaging method and an electronic device. The plastic packaging module comprises a substrate, a solder resist layer is provided on a surface of the substrate, ...
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WO/2024/057654A1 |
The present invention provides a semiconductor device with a vertical, the vertical element having drift region of a first conductivity type provided on a semiconductor substrate, a first injection portion provided below the drift region...
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WO/2024/059338A2 |
A method for selectively printing metal oxide dielectric films using directed fluidic assembly is provided. The metal oxide films are printed from a liquid suspension of nanoparticulate precursors using a dip coating mechanism. The resul...
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WO/2024/058243A1 |
The present invention provides a manufacturing method for a conductive film having high accuracy in detecting a defect. The manufacturing method includes an examination step for irradiating a conductive film with a laser beam to examine ...
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WO/2024/057787A1 |
A substrate processing device (100) comprises a substrate processing unit (10), a pipe (32), a filter (141), an upstream-side pipe (151), a downstream-side pipe (161), and a removal liquid supply unit (165). The substrate processing unit...
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WO/2024/058794A1 |
A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an ...
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WO/2024/055142A1 |
A gas supply apparatus and a substrate processing apparatus including the same are provided. The gas supply apparatus supplies a plurality groups of process gas to a substrate processing apparatus of which a plurality of wafers are place...
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WO/2024/057133A1 |
A semiconductor device that includes a first via connecting a backside of the semiconductor device to a frontside of the semiconductor device, and a second via connecting the backside of the semiconductor device to the frontside of the s...
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WO/2024/057590A1 |
The present invention comprises: an exhaust pipe which discharges the atmosphere of a processing chamber; a pressure sensing unit which is provided on the exhaust pipe and senses the pressure in the exhaust pipe; an opening/closing unit ...
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