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WO/2012/030032 |
Disclosed is a batch type substrate processing device. A batch type substrate processing device (1) according to one embodiment of the present invention comprises: a substrate processing unit (400) for processing a substrate (10); transp...
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WO/2012/028705 |
The invention relates to a scanner for checking and testing electronic semiconductor components, said scanner comprising at least two checking units (9, 10), each of which is equipped with a chuck (18), sensors (26), and a positioning un...
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WO/2012/029470 |
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substr...
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WO/2012/029407 |
The purpose of the present invention is to provide: a sintered oxide for use in the production of an oxide semiconductor film, which does not contain gallium (Ga), which is an expensive element, or zinc (Zn), which is an element that cau...
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WO/2012/029220 |
The objective of the present invention is to provide a management apparatus for semiconductor manufacturing equipment, and a computer program, wherein an accurate process monitoring can be achieved on the basis of pattern images that wer...
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WO/2012/029612 |
An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputte...
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WO/2012/028793 |
A method of bonding between a first surface (1) provided with at least one copper zone (3), surrounded by a silicon oxide zone (4) and a second surface (1') comprises an operation of treating the first surface (1) with a plasma before th...
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WO/2012/029709 |
The amorphous silicon nitride film of the present invention is formed on a film formation object using a surface-wave plasma CVD apparatus. The amorphous silicon nitride film is formed under conditions where the distance between the diel...
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WO/2012/029775 |
[Objective] To deal flexibly with variable-type variable-quantity production, in manufacturing of devices. [Solution] Provided is a device manufacturing method and an apparatus therefor, pertaining to a single-wafer processing method usi...
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WO/2012/029627 |
The polishing composition of the present invention comprises colloidal silica. The colloidal silica satisfies the following equation: A×D×E×F≥350,000 where A denotes the average aspect ratio (dimensionless) of the colloidal silica, ...
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WO/2012/030774 |
A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, whe...
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WO/2012/030499 |
In a workpiece processor (10), a head (12) is moveable onto a bowl (56) to form a process chamber (58). A workpiece (100) can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liqu...
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WO/2012/027865 |
A manufacturing method of a semiconductor structure includes that: a) an n-type field effect transistor is provided, the transistor includes a source area (24) , a drain area (24) and a first gate; b) a tension stress layer (28) is forme...
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WO/2012/029130 |
A wafer tray (60) that holds a semiconductor wafer (100) is provided with: a wafer placing plate (61), on which the semiconductor wafer (100) is to be placed; a tray main body section (62), which supports the wafer placing plate (61) suc...
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WO/2012/028109 |
A method for fabricating a semiconductor device. The method comprises preparing a substrate, which includes a first region and a second region. The method further includes forming a doped alignment mark region in the first region of the ...
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WO/2012/028024 |
A method of restraining the self-doping effect effectively is provided. The method includes: 1)cleaning the impurity contained in a semiconductor substrate with a heavily-doped buried area and attached on the inner wall of a reaction cha...
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WO/2012/028738 |
The present invention is related to a process for the manufacturing of a photovoltaic cell comprising the steps of: - providing a semiconductor substrate said semiconductor substrate comprising an insulating layer on its top surface; - i...
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WO/2012/030469 |
An assembly component and a technique for assembling a chip package using the assembly component are described. This chip package includes a set of semiconductor dies that are arranged in a stack in a vertical direction, which are offset...
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WO/2012/027788 |
Methods and systems are presented for detecting crystal defects such as slip lines in substantially monocrystalline semiconductor wafers and ingots using photoluminescence imaging. A sample of a substantially monocrystalline semiconducto...
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WO/2012/029544 |
The present invention provides an organic semiconductor particulate material, an organic semiconductor thin-film, and an organic transistor, the organic semiconductor particulate material being particulate-shaped material that can be use...
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WO/2012/030846 |
One embodiment relates to an apparatus for vacuum-compatible substrate thermal management. The apparatus includes a load-lock chamber coupled to a vacuum chamber, a light-emitting diode array, and a substrate stage. The load-lock chamber...
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WO/2012/029488 |
The present invention enables uniform crystallization of a semiconductor film by means of laser annealing. The present invention comprises a pulse laser oscillating device for outputting a pulse laser beam, and an optical transmission me...
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WO/2012/029381 |
This light-emitting element (100) comprises: an n-type GaN semiconductor base (113); a plurality of n-type GaN rod-shaped semiconductors (121) formed on top of the n-type GaN semiconductor base (113) in a vertical state and mutually sepa...
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WO/2012/028537 |
The invention relates to a photovoltaic device including a plate (11), characterized in that it includes a plurality of first discontinuous conductors (12) oriented along a first direction, said conductors being interrupted at interconne...
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WO/2012/030320 |
A multilayer crossbar memory array includes a number of layers (514). Each layer (514) includes a top set of parallel lines, a bottom set of parallel lines intersecting the top set of parallel lines, and memory elements (200, 216) dispos...
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WO/2012/029194 |
Provided are an inexpensive polishing device having high polishing capability for removing minute cracks present in a columnar surface layer portion produced from a hard and brittle material and fine polishing capability for removing asp...
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WO/2012/030363 |
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a conductor shell, so as to form a conductor-on- conductor core shell ...
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WO/2012/030033 |
The present invention relates to a gas supply apparatus installed in a manifold for supplying gas to a substrate in a large substrate-processing system, said gas supply apparatus comprising: a first gas spray tube (100) including a plura...
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WO/2012/030099 |
The present invention relates to an apparatus which uses an induction coil for treating toxic waste gas. The apparatus for treating toxic gas of the present invention comprises: a first scrubber installed in a housing for thermally decom...
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WO/2012/028077 |
A lateral double-diffused metal oxide semiconductor (LDMOS) device includes a source region (107), a gate region (113), a drain region (109), a body region (103) and a drift region (115) with doping type opposite to the doping type of th...
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WO/2012/031238 |
A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that ...
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WO/2012/029292 |
Provided is a semiconductor substrate including: a base substrate; a first crystal layer; a second crystal layer; and an insulating layer. The base substrate, the first crystal layer, the second crystal layer and the insulating layer are...
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WO/2012/030099 |
The present invention relates to an apparatus which uses an induction coil for treating toxic waste gas. The apparatus for treating toxic gas of the present invention comprises: a first scrubber installed in a housing for thermally decom...
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WO/2012/029485 |
Provided are: a semiconductor element for current control that is capable of highly accurately detecting a current within an IC of a chip by dynamically correcting the fluctuations in gain (a) and offset (b); and a control device using t...
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WO/2012/029814 |
The purpose of the present invention is to provide a washing solution for a substrate for a semiconductor device, which can remove the contamination arising from the attachment of fine particles, the contamination by organic materials an...
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WO/2012/029751 |
A temporarily placing device (1) is provided with a transfer device (5) that has: the placing surface (21), on which a subject to be carried, such as a substrate housing cassette (3), can be temporarily placed; and a driving unit (19), w...
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WO/2012/030774 |
A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, whe...
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WO/2012/029904 |
Provided is a method for manufacturing a cylindrical mold that can be used to advantage in nanoimprinting, wherein the mold is manufactured with high productivity and high precision. The method is used to manufacture a cylindrical mold h...
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WO/2012/028704 |
The invention relates to a susceptor for supporting a substrate (9) within a vacuum process chamber, comprising a flat surface (11) for placing the substrate (9) thereon such that the substrate (9) is in thermally conductive contact with...
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WO/2012/029938 |
Provided are a photoresist residue and polymer residue removing liquid composition, and a method of removing the residue used therewith, for removing photoresist residue and polymer residue produced during a process of manufacturing a se...
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WO/2012/028289 |
The invention relates to a method for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell, wherein, in order to create the contact structure, a paste, which contains metal particles, is app...
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WO/2012/029454 |
The present invention addresses the problem of providing a sintered oxide for use in producing an oxide semiconductor thin film which is free from expensive gallium (Ga) and the problem of providing an oxide semiconductor thin film havin...
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WO/2012/029843 |
Disclosed is a transferring system (1) for transferring a fine transfer pattern (M1) formed in a mold (M) to a molding material (D) provided on a substrate (W), the transferring system including: a positioning device (3) that is configur...
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WO/2012/030379 |
Methods, devices, and systems associated with phase change material memory are described herein. In one or more embodiments, a method of forming a phase change material memory cell includes forming a number of memory structure regions, w...
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WO/2012/030143 |
A method for manufacturing a susceptor is provided. In the method, a carbon material is placed in a silicon carbide molded body, and the silicon carbide molded body having therein the carbon material is subjected to hot pressing.
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WO/2012/029449 |
Provided is an exposure apparatus, which can prevent a foreign material from entering between a microlens array and a substrate, and which can also prevent a microlens from being scratched due to the foreign material and abnormal closene...
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WO/2012/031178 |
A lighting apparatus comprising a plurality of diodes and an electrical interface configured to receive an electrical signal and transmit the electrical signal to the plurality of diodes is provided.
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WO/2012/028792 |
In order to prevent the problems of the hydrolysis of silicon oxide formed by PECVD on the surface of at least one plate, the invention involves, within the vacuum deposition chamber used for depositing the silicon oxide, covering said o...
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WO/2012/030382 |
Abstract A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, whic...
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WO/2012/030703 |
An apparatus and method for heat treating a plurality of glass substrates. The glass substrates are supported on support platform and housed in a heat treating furnace. The substrates are supported in a substantially vertical orientation...
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