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WO/2013/057835 |
This thin film forming apparatus forms a thin film on a substrate. The thin film forming apparatus is provided with: a chamber having a substrate stored therein; a substrate plate, which is disposed in the chamber, and has the substrate ...
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WO/2013/058191 |
[Problem] To provide a semiconductor device, and a manufacturing method therefor, comprising a MOSFET capable of lowering a low-current region Ron and modulating conductivity in a high-current region, and that can control device characte...
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WO/2013/058004 |
Provided is a waste working fluid recirculation apparatus that is capable of circulating working fluid without supplying the working fluid to a processing apparatus, and capable of making the quality and temperature of working fluid more...
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WO/2013/056519 |
The present invention relates to a wafer-level through-silicon via (TSV) transmission structure applicable to the microwave band and a manufacturing method thereof. A TSV transmission cable structure using a high-frequency alternative co...
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WO/2013/056484 |
A manufacturing method for controlling wall angle of contact hole of liquid crystal display device comprises the following steps: (A) coating photoresist on a substrate to form a photoresist layer; (B) exposing the photoresist layer by u...
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WO/2013/058557 |
Disclosed is a substrate alignment device. A substrate alignment device according to the present invention includes a means for detecting whether an edge part of a substrate is loaded on and supported by support pins when the substrate i...
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WO/2013/058183 |
Provided are: a polishing pad, which improves the problem of scratches that are produced in cases where conventional hard (dry) polishing pads are used, which has having excellent polishing rate and polishing uniformity, and which is app...
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WO/2013/059670 |
A device comprises a cantilever, and an octahedral tip extending from a bottom surface of the cantilever. The octahedral tip comprises a top portion at which the octahedral tip is attached to the cantilever, a bottom portion comprising a...
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WO/2013/059130 |
In a plasma reactor employing a planar electron beam as a plasma source, the electron beam source chamber has an internal conductive fin that is profiled along a direction transverse to the beam propagation direction and parallel to the ...
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WO/2013/059457 |
The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and...
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WO/2013/056405 |
Disclosed is a semiconductor structure, including: a substrate, a conductor layer located on the substrate, a dielectric layer surrounding the conductor layer, an insulation layer coating the conductor layer and the dielectric layer, a g...
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WO/2013/059102 |
Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly h...
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WO/2013/059132 |
An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities.
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WO/2013/059297 |
A microelectronic package (10) may include a first microelectronic unit (12) including a semiconductor chip (16A) having first chip contacts (28), an encapsulant (30) contacting an edge of the semiconductor chip, and first unit contacts ...
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WO/2013/058094 |
Provided is a workpiece holding device, whereby: the issue of attachment precision of adhesive pins is eliminated; the number of adhesive pins is reduced as much as possible, and a workpiece is held and suspended; and even a workpiece ha...
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WO/2013/058970 |
A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring ...
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WO/2013/058610 |
Disclosed are a hot plate and a method of manufacturing the same. The method includes the steps of preparing a first barrier layer, laminating a first heat transfer layer on the first barrier layer, and laminating a second barrier layer ...
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WO/2013/058317 |
Provided is a radiographic image capturing apparatus such that cracks in an inter-layer insulation layer that is arranged between switching elements and information conversion elements are inhibited and defects in radiation detection ele...
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WO/2013/059757 |
Sub-arrays such as tiles or chips (110; 410; 510; 610) having pixel elements (112; 212; 412; 512; 612; 712; 812; 912) arranged on a routing layer (150; 350) or carrier to form a larger array (100). Through-chip vias (128) or the like to ...
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WO/2013/056828 |
The invention relates to a device 1 for determining the temperature of a semiconductor wafer during heating by at least one first radiation source. The device comprises a first grid structure 5, 16 with grid lines 18 that are impermeable...
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WO/2013/057270 |
The present invention relates to a nanoparticle comprising a nanosheet coated partially or totally with at least one layer of inorganic material and its use as a fluorophore or a fluorescent agent.
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WO/2013/059009 |
Methods, apparatus, and systems for cleaning a substrate are provided. In one aspect, a substrate is scrubbed using an acidic cleaning solution in a first scrubber, transferred to a second scrubber after scrubbing the substrate using the...
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WO/2013/058222 |
An objective of the present invention is to provide a solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method with which it is possible to use a silicon thin wafer when commencing a wafer ...
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WO/2013/059126 |
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
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WO/2013/057456 |
This method for producing an organised network of nanowires from ZnO comprises the following steps: obtaining a layer (1) of ZnO with Zn polarity on a substrate (5), by epitaxial growth at a low temperature, advantageously between 400°C...
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WO/2013/057390 |
The present invention relates to a method of controlling an ion implanter comprising a plasma power supply (AP) and a substrate power supply (PS), said substrate power supply comprising: • - an electricity generator (HT), • - a first...
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WO/2013/058226 |
This semiconductor device (100A) has a thin film transistor (10A1) supported on a substrate; the thin film transistor (10A1) has an oxide semiconductor layer (5a1), a gate electrode (3a1), a source electrode (8a1), a drain electrode (9a1...
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WO/2013/057949 |
One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step o...
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WO/2013/059097 |
A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam...
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WO/2013/057920 |
A non-volatile storage element is provided with a first wiring (102), a first plug (104) which is arranged on and electrically connected with the first wiring (102), an alteration prevention layer (105) which covers the entire region of ...
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WO/2013/058290 |
An adhesive tape (100) for semiconductor device dicing, which is obtained by forming a radiation-curable adhesive layer (20) on a base film (10). The base film (10) is formed of two or more base resin film layers. A base resin film layer...
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WO/2013/057992 |
Provided is a waste working fluid recirculation apparatus that is capable of suppressing the foaming of working fluid, and prevents wasteful working fluid consumption. Working fluid is supplied to a processing apparatus (1), and then the...
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WO/2013/058909 |
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed ...
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WO/2013/059101 |
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for ...
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WO/2013/058379 |
[Problem] To provide a microwave heating device and a microwave heating method whereby it is possible to appropriately heat either a film of a conductor or semiconductor or a film of a dispersion in which a conductor or semiconductor has...
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WO/2013/056629 |
An encapsulation structure, a method and an electronic device. The encapsulation structure includes: a substrate (21), which substrate (21) is disposed thereon with a grounding end (27) and at least two circuit modules; a shielding rib (...
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WO/2013/058053 |
Provided is a bonding device that is capable of obtaining a high-quality bonded body in which a first member and a second member are bonded together, with no position drift between the first member and the second member in the bonded bod...
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WO/2013/058746 |
Techniques for providing non-volatile antifuse memory elements and other antifuse links are disclosed herein. In some embodiments, the antifuse memory elements are configured with non-planar topology such as FinFET topology. In some such...
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WO/2013/057446 |
The invention relates to a method of increasing the thickness of at least one face of an inorganic colloidal sheet. The invention further relates to the homostructured or heterostructured materials resulting from such a method and the ap...
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WO/2013/058380 |
An adhesive composition of the present invention contains a resin composition and a plurality of conductive particles, and when the maximum diameter in the particle size distribution of the conductive particles is represented by a and th...
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WO/2013/058234 |
[Problem] To provide a method for fabricating a semiconductor device in which, by suppressing the concentration of cavities in Cu wiring, the formation of voids within the Cu wiring is suppressed and the occurrence of stress migration, w...
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WO/2013/058770 |
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially dev...
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WO/2013/058250 |
The present invention is a radiation-sensitive resin composition comprising: [A] a compound represented by formula (1); and [B] a base polymer having at least one structural unit selected from the group consisting of a structural unit de...
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WO/2013/058037 |
In a plane view, an end region (TM) surrounds an element region (CL). Thermal etching is carried out on a first side of a silicon carbide substrate (SB) such that a side wall (ST) having a surface orientation of either {0-33-8} or {0-11-...
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WO/2013/058064 |
A piezoelectric element (10) is configured by laminating a lower electrode (3) and a ferroelectric thin film (for example, a PZT thin film (4)) in this order on a substrate (1). The ferroelectric thin film is of perovskite type, and the ...
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WO/2013/058023 |
A cleaning device (1) for removing contamination on the surface of a substrate (B) is provided with: a generation section (70) for generating microscopic ozone bubble-containing water; a spray section (31) for spraying the microscopic oz...
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WO/2013/057465 |
The present invention relates to a method of placing solder balls on a substrate, the method comprising: providing a substrate; providing a plurality of balls comprising solder; providing a ball placement stencil having an upper side and...
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WO/2013/057321 |
The invention provides a stable oxide material system for a capacitor, electronic device or a memory device having an effective high-k value with an effective zero alpha while exhibiting low leakage current density. The stable oxide mate...
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WO/2013/056556 |
A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer (1), a p-type ohm contact electrode (4), a SiO2 passivation layer (2), a SiO2 compact insulation layer (3), a p-type SiC epitaxia...
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WO/2013/057617 |
In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics during bonding are similar to that of a thinner wafer, thereby reducing potentia...
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