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WO/2013/059181 |
A microelectronic package (10) can include wire bonds (32) having bases (34) bonded to respective conductive elements (28) on a substrate (12) and ends (36) opposite the bases (34). A dielectric encapsulation layer (42) extends from the ...
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WO/2013/058292 |
Provided is a method for producing transparent SOI wafers, with which it is possible to minimize wafer breakage and chipping. Provided is a method for producing transparent SOI wafers obtained using a method which includes at least the...
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WO/2013/056639 |
An electrowetting display panel and a manufacturing method therefor. The electrowetting display panel comprises: a first glass substrate (1), a second glass substrate (2) arranged opposite to the first glass substrate (1), a cavity chamb...
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WO/2013/057642 |
The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through...
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WO/2013/057771 |
In a method for manufacturing a thin-film transistor (TFT), a connection conductive layer (3) is formed on the overall surface of a substrate (1), and therefore, when a stamp (4) is placed on the substrate (1), a connection conductive la...
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WO/2013/057638 |
A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber has a side wall, a holder located within the closed process chamber adapted to receive a wafer shaped article, and a door for lo...
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WO/2013/058872 |
A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have subst...
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WO/2013/058020 |
The present invention improves current density and also improves reliability of bonding strength of wire bonding. A semiconductor device (1) is provided with a semiconductor element (1a) and an external circuit (1b), which are mounted on...
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WO/2013/059094 |
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron densit...
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WO/2013/058760 |
Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide...
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WO/2013/057448 |
The invention relates to a process for the thickness growth of at least one face of an inorganic colloidal sheet. The invention also relates to the homostructured or heterostructured materials resulting from such a process and also to th...
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WO/2013/056936 |
The invention relates to a semiconductor substrate (1) having a structure (3) on an upper face (2) and another substrate (4) for handling the semiconductor substrate which is likewise structured on an upper face (5). The structuring of t...
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WO/2013/056523 |
A method is provided for manufacturing a semiconductor device with a metal film resistor structure. The method includes providing an insulation layer on the semiconductor device. A lower copper interconnect is formed in the insulation la...
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WO/2013/058300 |
Provided is a curable composition for imprint, which is capable of forming a pattern with less pattern defects. A curable composition for imprint, which contains (A) a polymerizable compound and (B) a photopolymerization initiator, and w...
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WO/2013/058299 |
Provided is a solder bump formation method that enables very small solder bumps to be formed without a possibility of the formation of bridges due to superfluous molten solder. An injection head (11) for supplying molten solder is forcib...
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WO/2013/055085 |
A lens for electron capture dissociation may include: a first electrode and a second electrode spaced apart from each other and arranged along a first direction; and a third electrode and a fourth electrode spaced apart from each other a...
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WO/2013/054823 |
In a transistor using an oxide semiconductor, entry of hydrogen atoms into an oxide semiconductor film adversely affects reliability. Water is a typical substance including a hydrogen atom, which could enter a semiconductor device after ...
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WO/2013/055488 |
A method for etching a substrate includes etching at least one first layer of the substrate with a non-uniform substrate temperature and etching at least one second layer of the substrate with uniform substrate temperatures.
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WO/2013/053419 |
The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal moulded body corresponding to the shape of ...
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WO/2013/054015 |
The invention relates to a method for producing a hybridized device, which consists of producing a first microelectronic component (10) provided with metal beads (16) on a surface (14) thereof, and a second microelectronic component (12)...
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WO/2013/056186 |
Methods, systems, and devices are described for slicing and shaping materials using magnetically guided chemical etching. In one aspect, a method includes forming a pattern on a substrate by a mask, depositing a catalytic etcher layer on...
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WO/2013/054623 |
The objective of the present invention is to provide a semiconductor layer with high photoelectric conversion efficiency and a photoelectric conversion device using same. A method for manufacturing a semiconductor layer according to one ...
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WO/2013/054580 |
Single crystal substrates (1-9) are composed of a silicon carbide, and respectively have first front surfaces (1a, 2a, 3a) and first rear surfaces (1b, 2b, 3b), said first front surfaces and first rear surfaces facing each other. A suppo...
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WO/2013/054960 |
The present invention relates to a helicon plasma apparatus. The helicon plasma apparatus includes: a plurality of dielectric tubes mounted on a vacuum chamber; antennas disposed around each of the dielectric tubes; permanent magnets whi...
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WO/2013/055904 |
A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the subst...
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WO/2013/054431 |
This semiconductor device is provided with a drift layer (2) that has a structure having laminated therein a plurality of quantum dot layers (8), each of which is provided with a quantum dot (6) containing InxGa1-xN (0≤x≤1), and an e...
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WO/2013/054576 |
Provided are a waste machining fluid treatment device and a waste machining fluid treatment method which are capable of maintaining the conductivity of a machining fluid within a predetermined range. A waste machining fluid treatment dev...
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WO/2013/054776 |
Provided is a vacuum treatment device (10) in which, when raising lifting pins (27) which are inserted into through-holes (24), a substrate (31) on a mounting table (21) is loaded on cover members (26) connected to the top end of the lif...
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WO/2013/055708 |
Methods and systems for generating an indication of a changing electrostatic field between a sense electrode of a capacitance sensing integrated circuit and a specimen under inspection are presented. The capacitance sensing integrated ci...
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WO/2013/053420 |
The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (1) on the potential surfaces, and at least one metal mou...
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WO/2013/054849 |
[Problem] To provide a substrate processing device that is compact and consumes little energy when forming a downflow at a substrate conveyance block. [Solution] A second conveyance block (142b) for conveying substrates (W) to a second s...
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WO/2013/056238 |
A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of l...
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WO/2013/053052 |
A device and method of fabricating a device in the form of an array of planarized particles of single crystal silicon or poly crystal silicon wherein the planar surfaces of the particles is used to fabricate an array of electronic device...
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WO/2013/055289 |
The present invention provides 2-plate mold (80) and 3-plate transfer mold (40, 40a, 40b), and a molding press (20, 20a). The 2-plate mold (80) and 3-plate mold (40, 40a) include a top mold plate (44) and a bottom mold plate (42). The bo...
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WO/2013/054408 |
[Problem] In a large-capacity module designed to be more compact/lightweight, reduce surge and reduce loss by integrating a drive circuit or other peripheral circuit into a power circuit, to reduce problems such as an increase in electri...
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WO/2013/054876 |
Provided are a CVD device capable of dramatically improving the quality and productivity of a susceptor on which a coating such as SiC or TaC is formed without causing an increase in production cost or device size; a method for manufactu...
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WO/2013/054655 |
A thin film that has a predetermined composition containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing th...
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WO/2013/053277 |
Disclosed is a process for manufacturing a new aluminum substrate, comprising a working procedure of forming a nano ceramic insulation coating layer on an aluminum layer by nano ceramic coating after shaping the aluminum layer; the thick...
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WO/2013/054212 |
A transistor structure is formed to include a substrate and, overlying the substrate, a source; a drain; and a channel disposed vertically between the source and the drain. The channel is coupled to a gate conductor that surrounds the ch...
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WO/2013/056251 |
Methods and systems for lateral switched-emitter thyristors in a single-layer implementation. Lateral operation is advantageously achieved by using an embedded gate. Embedded gate plugs are used to controllably invert a portion of the P-...
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WO/2013/054870 |
The purpose of the present invention is to provide a positive photosensitive resin composition with which dissolution of unexposed portions during development can be prevented. The positive photosensitive resin composition of the present...
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WO/2013/054698 |
This substrate carrier device is equipped with a chamber wall, a table, a linear motor carrier mechanism, an optical window, and a laser measuring instrument. The chamber wall defines a carrier space. The table is housed within the carri...
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WO/2013/054740 |
Provided are a drive circuit substrate that requires few manufacturing steps and that achieves improved use efficiency of materials, a manufacturing method therefor, a display device, and an electronic device. This display device is prov...
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WO/2013/054917 |
Provided are a semiconductor element and manufacturing method thereof in which positioning is simple when cutting elements from a wafer and in which damage such as peeling and cracking due to cleavage of the substrate can be suppressed. ...
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WO/2013/054838 |
A liquid processing apparatus (10) of the present invention comprises a substrate holding portion (21) which holds a substrate horizontally, and a rotatable top plate (32) which covers the substrate held by the substrate holding portion ...
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WO/2013/054577 |
Provided are a waste machining fluid circulation device and a waste machining fluid circulation method which are capable of maintaining the pH value of a machining fluid within a predetermined range. A waste machining fluid circulation d...
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WO/2013/054652 |
Provided is a substrate processing apparatus comprising the following: a processing chamber that can accommodate a plurality of substrates, the interior of which is divided into a plurality of zones; a gas supply system that supplies a f...
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WO/2013/053175 |
The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises the following steps: providing a substrate, and forming on the substrate a sacrifice gate, and a side wall and a source/dra...
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WO/2013/054919 |
Provided are: a method for producing a β-Ga2O3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitax...
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WO/2013/054802 |
Provided is a plasma treatment method that allows a stable plasma to be maintained. For that purpose, in the plasma treatment method, an insulating film is deposited on a substrate using a plasma treatment apparatus provided with a vacuu...
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