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WO/2012/042809 |
According to an electronic component mounting method of the present invention, a component is mounted in a mode in which a bump is earthed to an electrode by way of a thermosetting flux formed by blending a first active constituent with ...
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WO/2012/042869 |
The present invention addresses the problem of obtaining an olefinic expandable base material that has low contamination, has a high degree of expandability, which has been insufficient in conventional olefinic expandable base materials,...
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WO/2012/043495 |
Provided are: a transfer apparatus wherein, by controlling the temperature distribution of a board material, throughput is not deteriorated, generation of warping of the board material is suppressed, and the board material is continuousl...
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WO/2012/043383 |
To easily control the amount of etching on a silicon-containing material. In a pre-treatment step, a treatment fluid containing a second oxidative reaction component is sprayed from a pre-treatment nozzle (42) and is brought into contact...
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WO/2012/041038 |
A semiconductor device is provided. The semiconductor device includes: a semiconductor substrate (300); a relaxed SiGe layer (200) located on the semiconductor substrate (300); an NMOS transistor located on the relaxed SiGe layer (200); ...
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WO/2012/043923 |
The present invention relates to an adhesive composition that can be used in a manufacturing process of a semiconductor device, and an adhesive device processed in the form of a sheet having same, and more specifically, to an adhesive co...
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WO/2012/043384 |
The purpose of the present invention is to improve uniformity of etching of a silicon-containing material. A substrate (9) to be processed, said substrate being coated with a silicon-containing material (9a), is supported on a virtual pl...
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WO/2012/042961 |
Provided is a growth method for a GaN crystal that controls the occurrence of lamination defects even when a GaN crystal is grown on a GaN seed crystal substrate for which the main surface is at a slope of 20 - 90° to a (0001) surface. ...
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WO/2012/042960 |
The present invention provides a cerium-based abrasive that can achieve an abrasive surface having a high abrasion speed and that reduces the occurrence of abrasion damage to the utmost. The cerium-based abrasive contains F, the rare ear...
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WO/2012/043365 |
A composition is adopted that includes an inorganic acid and a metal compound. The composition further includes an organic acid, an organic acid salt, an inorganic acid salt, or a surfactant. The composition further includes hydrochloric...
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WO/2012/042800 |
[Objective] To provide a load lock apparatus wherein energy necessary for operating the load lock apparatus and peripheral apparatuses connected to the load lock apparatus can be reduced, an exhaust control apparatus to be used for the l...
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WO/2012/043039 |
Provided is a defect inspecting apparatus wherein adjustment with a change of an elevation angle of illuminating light to be applied to a substrate to be inspected can be easily performed, while being low cost. A plane parallel plate (51...
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WO/2012/043767 |
The purpose of the present invention is to provide a cleaning solution for a semiconductor-device substrate, said cleaning solution being water-rinsable, capable of thoroughly cleaning the surface of a substrate in a short amount of time...
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WO/2012/041087 |
A semiconductor device and a method for forming the same are provided. The semiconductor device comprises: a substrate (1); an insulating layer (2), formed on the substrate (1) and having a trench (21) to expose an upper surface of the s...
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WO/2012/043995 |
The present invention pertains to a device for wafer alignment and a rear surface test, which is provided neighboring a wafer chuck so as to detect contaminants on a rear surface of a wafer while the wafer rotates by an orientor and the ...
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WO/2012/042699 |
A semiconductor device provided with a first MIS transistor and a second MIS transistor. The first MIS transistor (nTr1) is provided with: first offset sidewalls (22a) formed on the gate-width-direction side surfaces of a first gate elec...
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WO/2012/043830 |
The purpose of the present invention is to provide: a substrate etching agent that does not cause over-etching, etching residue, etching inconsistencies, or the like when selectively etching a silicon nitride (SiN) film formed in the pro...
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WO/2012/043349 |
[Objective] To provide a suction plate, wherein, when a ribbed wafer is sucked by the suction plate with the ribbed-side thereof facing down, the position of the ribbed wafer is not susceptible to being deviated. [Solution] The suction p...
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WO/2012/042772 |
In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2)...
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WO/2012/044533 |
An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve ...
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WO/2012/043764 |
The present invention relates to an adhesive composition for encapsulating connection parts in a semiconductor device in which respective connection parts of a semiconductor chip and a wiring circuit board are electrically connected with...
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WO/2012/041033 |
A method for forming through-holes between metallization layers includes: forming a seed layer (140) on a first dielectric layer (100) and a first metal layer (120). The first metal layer (120) is embedded in the first dielectric layer (...
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WO/2012/043102 |
Provided are an acrylamide derivative that can serve as a structural unit of a polymer compound to be included in a photoresist composition, a polymer compound obtained by polymerizing starting material containing said acrylamide derivat...
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WO/2012/043490 |
The present invention provides an Al alloy film that, in a production step of a thin-film transistor substrate, reflective film, reflective anode, touchpanel sensor, or the like, can effectively prevent corrosion such as pinhole corrosio...
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WO/2012/043053 |
The purpose is to provide a substrate treatment system whereby it becomes possible to keep the pressure in a chamber stably even when the flow volume of an inert gas to be supplied is fluctuated and it becomes also possible to increase t...
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WO/2012/043964 |
Disclosed is a preparation method of a CMP pad conditioner. The preparation method of a CMP pad conditioner comprises: the following steps: preparing a amorphous metal powder; and sintering the amorphous metal powder into a state in whic...
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WO/2012/044582 |
A semiconductor wafer assembly (306) formed by bonding a support wafer (305) to a thin wafer (310) using a double- sided bonding release tape (311). The support wafer provides support for the thin target wafer such that existing handling...
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WO/2012/043272 |
[Problem] To ensure uniformity of the surface treatment and to reliably convey a substrate to be treated in a conveyance device used for surface treatment. [Solution] A plurality of shafts (30) are arranged at an interval in the conveyan...
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WO/2012/043727 |
The present invention provides a structure for joining the ball joints of a multilayer copper bonding wire, the structure having inexpensive material cost, low looping, superior ball joining properties, and high suitability for the mass ...
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WO/2012/043951 |
Provided is a single crystal ingot sawing apparatus. The A single crystal ingot sawing apparatus includes a wire saw configured to slice an ingot, a roller for configured to drive the wire saw, and a slurry bath for configured to receive...
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WO/2012/044344 |
Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional ba...
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WO/2012/041071 |
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device comprises: a semiconductor substrate (10); a shallow trench isolation (STI) (14) which is embedded in the semiconductor substrate (10) and f...
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WO/2012/043441 |
Provided is a ceramic member in which the difference in thermal expansion coefficient between an insulating ceramic material and an electrically conductive ceramic material is extremely small and therefore any mismatch caused in associat...
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WO/2012/043058 |
When setting a spatial filter, it has been necessary for an operator to repeatedly carry out visual confirmation of a scanned image and adjust said spatial filter. The setting state has also been operator-dependent. A scattered light ima...
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WO/2012/044359 |
Defects in a semiconductor substrate due to ion implantation are minimized by forming (42) an implant region in the semiconductor substrate and subjecting the semiconductor substrate to a first anneal (44) to recrystallize the semiconduc...
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WO/2012/043762 |
The present invention provides a composition for forming a liquid immersion upper layer film, which comprises [A] a polymer component comprising a polymer (A1) and [B] a solvent, wherein the polymer (A1) has a structural unit (I) contain...
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WO/2012/042909 |
Provided are: a III nitride semiconductor light-emitting element, in which both good ohmic contact between an electrode and a semiconductor layer and performing of the function of an reflecting electrode layer can be achieved satisfactor...
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WO/2012/042370 |
A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a...
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WO/2012/044980 |
Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precu...
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WO/2012/044276 |
A memristor (100) includes a first electrode (102) formed of a first metal, a second electrode (104) formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer (110...
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WO/2012/043450 |
According to the present invention, a liquid resin composition that has good wettability and spreadability after chip mounting and exhibits superior solder cracking resistance even with high temperature solder reflow treatment at roughly...
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WO/2012/044702 |
The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly genera...
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WO/2012/041035 |
A fin field effect transistor (FinFET) flash memory device and a forming method thereof. The flash memory device is located on an insulation layer (112), and comprises: a first fin (114) and a second fin (116), wherein the second fin (11...
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WO/2012/044580 |
A heater (38) for a heating system of a chemical vapor deposition process includes a relatively highly emissive body (42) and an electrically conductive heating element (46) disposed within a passageway (50) in the body. The heating elem...
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WO/2012/043828 |
A mold having an irregular structure, wherein surface roughness Ra of the irregular structure, a maximum value Ra' (max) and a minimum value Ra' (min) of fiber roughness Ra' satisfy the following formula (1): 0.13≤(Ra'(max)-Ra'(min))/R...
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WO/2012/043340 |
Provided is a dicing/die-bonding film wherein yielding and rupture of a dicing film can be prevented and a die-bonding film can be favorably ruptured by means of tensile tension. In the dicing/die-bonding film of the present invention, t...
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WO/2012/043496 |
A method for refining alkaline treatment fluid for semiconductor substrates and a refining device are provided that are capable of refining all kinds of alkaline treatment fluid used for treating semiconductor substrates for a variety of...
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WO/2012/042817 |
[Problem] To remove a foreign material on a photoresist layer, while suppressing damages applied to a substrate. [Solution] On a substrate (11), a photoresist layer (12) is formed, said photoresist layer being capable of changing the sha...
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WO/2012/041836 |
A bipolar non-punch-through power semiconductor device is provided. It comprises a semiconductor wafer (2) and a first electrical contact on a first main side and a second electrical contact on a second main side. The wafer (2) comprises...
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WO/2012/042664 |
A soaking apparatus capable of uniformly heating a subject to be heated and achieving reduction in size is provided. The soaking apparatus comprises: a plate (1) in which a heat pipe circuit (2) enclosing a hydraulic fluid (31) is formed...
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