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Matches 1 - 50 out of 1,035,491

Document Document Title
WO/2019/213533A1
The present disclosure generally relates to chuck technology for supporting semiconductor wafers during processing. In one example, a wafer chuck assembly comprises a chuck hub and a centering hub disposed within the chuck hub. An engage...  
WO/2019/213337A1
The present disclosure generally relates to tin oxide films prepared by physical vapor deposition using a doped tin target. The semiconductor film may include tin and oxygen, and may be formed in a PVD chamber including a silicon doped t...  
WO/2019/212046A1
Provided are: a heated ozone water production method capable of producing a heated ozone water having a very high ozone concentration by inhibiting the reduction of the ozone concentration of a high-concentration heated ozone water; a he...  
WO/2019/212986A1
Various embodiments include methods and apparatuses to moisturize a substrate prior to an electrochemical deposition process. In one embodiment, a method to control substrate wettability includes placing a substrate in a pre-treatment ch...  
WO/2019/210627A1
The present invention provides a high-precision fast chip taking and loading device, comprising a wafer platform and a chip bearing platform. The wafer platform is used for placing a wafer, and the chip bearing platform is used for placi...  
WO/2019/212270A1
A substrate processing apparatus, according to one embodiment of the present invention, comprises: a gas spraying part (101) comprising two gas distribution parts (140, 130) which are positioned at the upper part in a chamber (110) and a...  
WO/2019/213109A1
Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to ...  
WO/2019/213604A1
Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a stru...  
WO/2019/211412A1
An integrated circuit device (100) comprises a semiconductor substrate (101) having a resistivity of at least 100 Ω.cm. An electrically insulating layer (102) contacts the semiconductor substrate (101). The electrically insulating laye...  
WO/2019/210907A1
The present invention relates to a continuous-flow vacuum system (1, 1', 1'') for the mass production of processed substrates, comprising at least one loading and/or unloading module, at least one processing module (2, 3) and a conveying...  
WO/2019/210602A1
Disclosed in the present invention are an array substrate, a manufacturing method thereof and a display panel. The array substrate comprises: a substrate; a buffer layer; an active layer; a first insulating layer; a gate; a second insula...  
WO/2019/178004A3
Semiconductor-on-insulator field effect transistor (FET) integrated circuit (IC) structures and fabrication processes that mitigate or eliminate the problems caused by the secondary parasitic back-channel FET of conventional semiconducto...  
WO/2019/213253A1
Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact...  
WO/2019/212646A1
Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a substrate, a well region (128) disposed adjacent to the substrate, a first fin (130) disposed above the well ...  
WO/2019/212410A1
Various embodiments may provide an integrated circuit layout cell. The integrated circuit layout cell may include a doped region of a first conductivity type, a doped region of a second conductivity type opposite of the first conductivit...  
WO/2019/212592A1
Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) proces...  
WO/2019/212741A1
Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust g...  
WO/2019/212623A1
A semiconductor device is disclosed including one or more integrated memory modules. Each integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated memory. In one example, the first...  
WO/2019/210617A1
A wafer level package system in package method and a package structure, the method comprising: providing a device wafer, comprising a first front surface (12) integrated with a plurality of first chips (11) and a first back surface (13) ...  
WO/2019/213601A1
The disclosed technique may be used to electrically and physically connect semiconductor wafers to allow high density interconnects and accommodate mismatched coefficients of thermal expansion materials by having room temperature hybridi...  
WO/2019/211933A1
This carrier system is provided with: a plurality of carrier vehicles that travel along a track and carry loads; and a controller that controls traveling of the plurality of carrier vehicles, wherein the track has a first main track, a p...  
WO/2019/213338A1
Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungs...  
WO/2019/210619A1
Provided in the present invention are an array substrate and a preparation method. The method comprises the following steps: first, providing a substrate, sequentially manufacturing a buffer layer, a polysilicon layer, and a first gate i...  
WO/2019/212938A1
Methods of depositing a silicon nitride film at low temperatures are discussed. These silicon nitride films are highly conformal, have low etch rates, low atomic oxygen concentrations and good hermeticity. These films may be used to prot...  
WO/2019/211888A1
[Problem] To provide a transistor that exhibits excellent properties. [Solution] Provided is a method for forming a gate insulation film for a bottom gate-type transistor, the method comprising: forming a resist layer on a gate electrode...  
WO/2019/212676A1
A gas distribution apparatus is disclosed. The apparatus includes a faceplate and a blocker plate. An adjustment mechanism is coupled to the blocker plate and is operable to position the blocker plate relative to the faceplate in order t...  
WO/2019/210776A1
An array substrate, a display device, a thin film transistor, and a method for manufacturing an array substrate. The array substrate comprises: a substrate base (1), an active layer (4), and a cover layer (5). The active layer (4) is loc...  
WO/2019/213001A1
An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a Ill-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature T1 und...  
WO/2019/212624A1
In an embodiment, a method of measuring nanoparticles from a sample using single particle inductively coupled plasma mass spectrometry (spICPMS) includes separating the nanoparticles from a surface of the sample by: exposing the surface ...  
WO/2019/213339A1
Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of tita...  
WO/2019/212011A1
An inspection device is provided which can save space while reliably measuring deformed parts on the bevel, etc., of a wafer. This inspection device 100 is provided with an outer periphery lighting unit 11, 111 which illuminates the oute...  
WO/2019/211697A1
Provided is a semiconductor device in which it is possible to change the storage region for each hierarchy level of a storage device. Specifically provided is a semiconductor device which has a control circuit and a storage device provid...  
WO/2019/210628A1
Provided in the present invention are a chip pick-up and mounting device and a chip mounting machine using same. A rotation driving device is provided at a middle position between a wafer table and a chip carrier. The driving device is p...  
WO/2019/211989A1
The present technology pertains to an electrostatic protection element and an electronic apparatus in which the protection performance against static electricity can be improved. The electrostatic protection element is provided with: a f...  
WO/2019/212930A1
An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend ver...  
WO/2019/212994A1
An emissive quantum photonic imager comprised of a spatial array of digitally addressable multicolor micro pixels. Each pixel is an emissive micro optical cavity comprising a monolithic color-tunable semiconductor light emitting diode. T...  
WO/2019/212178A1
The present invention relates to a mother plate and a method of producing a mask. A mother plate according to the present invention is a mother plate (20) which is used when producing a mask for forming an OLED pixel by electroforming, a...  
WO/2019/212059A1
This upper electrode has a central electrode, a peripheral electrode, multiple dielectric bodies, and a power supply electrode. The central electrode is disposed on a counter surface facing a placement table on which an item subject to p...  
WO/2019/210626A1
The present invention provides a long-distance, accurate and rapid chip loading and unloading device, comprising a wafer platform and a bearing platform. The wafer platform is used for supporting wafers, and the bearing platform is used ...  
WO/2019/211305A1
The present invention relates to a transmission electron microscope (100; 200) comprising: - a column (102) defining an object chamber (104), - at least one ballistic material jet source (110, 202, 204, 300, 400, 500): - outside said obj...  
WO/2019/212037A1
[Problem] The resist removal rate and cleaning ability of conventional ozone water are still not enough to meet the requirements of the semiconductor production field of the present day, and conventional ozone water does not fully live u...  
WO/2019/212008A1
[Problem] To provide a temporary adhesive with which no voids occur between a support body and a wafer. [Solution] This temporary adhesive, for releasably bonding a support body and a circuit surface of a wafer in order enable processing...  
WO/2019/210370A1
The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic s...  
WO/2019/212810A1
Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a qua...  
WO/2019/212858A1
An apparatus and associated method for high speed and/or mass transfer of electronic components onto a substrate comprises transferring, using an ejector assembly, electronics components (e.g., light emitting devices) from a die sheet on...  
WO/2019/213115A1
Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.  
WO/2019/213420A1
A semiconductor device comprises a complementary metal oxide semiconductor (CMOS) device and a heterojunction bipolar transistor (HBT) integrated on a single die. The CMOS device may comprise silicon. The HBT may comprise III-V materials...  
WO/2019/212981A1
Devices and methods relating to detection of defects in solar modules are disclosed. A photovoltaic module inspection system can comprise a digital imaging device, a lens transparent to ultraviolet (UV) light, and a filter configured to ...  
WO/2019/210753A1
Provided in the present disclosure are an OLED display substrate, a manufacturing method therefor, and a display device. The manufacturing method for the OLED display substrate comprises: manufacturing a first electrically-conductive lay...  
WO/2019/213207A1
Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.  

Matches 1 - 50 out of 1,035,491