Login| Sign Up| Help| Contact|

Patent Searching and Data


Matches 1 - 50 out of 1,007,311

Document Document Title
WO/2018/103163A1
Low-melting-point inorganic binder slurry for an aluminum substrate and a preparation method therefor. The low-melting-point inorganic binder slurry comprises the following materials in parts by weight: 60-85% of SiO2-Bi2O3-B2O3-Al2O3 lo...  
WO/2018/104931A1
A method for judging defect quality includes acquiring plural images with a predetermined step in a height direction by an optical image means (22) to an inspection subject (10) which includes multilayer transparent thin films (1, 2, 3, ...  
WO/2018/103117A1
The present invention relates to the technical field of semiconductor packaging, and provides a chip packaging structure, and packaging method thereof. The structure comprises a silicon-based main body (1) and chip electrodes (11). The s...  
WO/2018/104828A1
To provide a decoder whose area is reduced. The decoder includes an inverse discrete cosine transform (IDCT) circuit. The IDCT circuit includes a multiplier circuit. The multiplier circuit includes an arithmetic circuit that multiplies a...  
WO/2018/106626A1
Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1 -C13 alkyl or aryl group and each R' is independently H, C1 -C10...  
WO/2018/102998A1
A method for preparing a ceramic package substrate with copper plated dams, comprising the steps of (1) thin film metalization; (2) manufacturing independent circuits and annular copper plating layers on a ceramic base; (3) leveling; and...  
WO/2018/105310A1
This semiconductor device is provided with: a semiconductor substrate (30); a plurality of guard rings (10) annularly formed on the surface of one face (30a) of the semiconductor substrate and having mutually different potentials; a plur...  
WO/2018/104899A1
The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.  
WO/2018/105749A1
The purpose of the present invention is to provide an insulated gate bipolar transistor device which exhibits high performance and high mass productivity, and the like. An insulated gate bipolar transistor device which comprises, as a pl...  
WO/2018/105299A1
A photoresist is applied to an upper surface (10a) of a semiconductor wafer (10) being rotated at a predetermined rotational speed to form a photoresist film (31) having a predetermined thickness (t1), which is dried. Then, a chemical so...  
WO/2018/105031A1
A substrate detection device (1) is provided with: a light projection unit (4) which is arranged so as to face an inlet (31) and an outlet (31) each corresponding to a specific position on a conveyance path (3), and which projects detect...  
WO/2018/106827A1
Systems and methods for providing an augmented input data to a convolutional neural network (CNN) are disclosed. Wafer images are received at a processor. The wafer image is divided into a plurality of references images each associated w...  
WO/2018/105975A1
A semiconductor element disclosed in an embodiment comprises: a light-emitting part comprising a light-emitting structure layer which has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active laye...  
WO/2018/105418A1
Provided is a replica manufacturing device which performs an imprint process for forming an imprint material pattern on a replica substrate using a master mold, fabricates a replica mold by processing the replica substrate with the patte...  
WO/2018/106516A1
Thermal management devices and methods are making are described herein. In one example, the thermal management device includes a heat spreader having a first surface and a second surface, wherein the first surface of the heat spreader is...  
WO/2018/105674A1
A release layer production method is provided which involves a step for coating a substrate with a release layer forming composition and firing at a maximum temperature of no less than 400°C, wherein the release layer forming compositio...  
WO/2018/105827A1
The present invention relates to an ingot growth control device and a control method thereof, which can quickly and accurately control the diameter of an ingot during an ingot growing process and improve the quality of the ingot. The ing...  
WO/2018/102852A1
The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a si...  
WO/2018/103606A1
A GaN fin-typed transistor having high linearity and high electron mobility, and a manufacturing method thereof. The transistor has a structure comprising, from the bottom to the top: a substrate (1), a buffer layer (2), a depletion laye...  
WO/2018/104136A1
The invention relates to a method for producing a transistor, in particular a gallium nitride transistor based on high electron mobility. After a structured metal layer has been formed in a first gate region by means of a temporarily for...  
WO/2018/105336A1
The present invention provides a resistivity measuring method comprising: a mercury electrode forming step of forming a mercury electrode by bringing mercury into contact with a semiconductor single crystalline wafer; a forward bias volt...  
WO/2018/105032A1
A die component supply device (1) is provided with: a wafer holding unit (2) which includes an expandable component holding sheet (23) holding on an upper surface thereof a plurality of die components (D) formed by dicing a semiconductor...  
WO/2018/106535A1
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.  
WO/2018/106325A1
Semiconductor devices include a semiconductor layer structure having a wide band-gap semiconductor drift region having a first conductivity type. A gate trench is provided in an upper portion of the semiconductor layer structure, the gat...  
WO/2018/105662A1
This method for producing a semiconductor device comprises: a step (I) wherein one or more semiconductor elements, each of which has an active surface, are arranged on a thermosetting resin film containing a thermosetting resin compositi...  
WO/2018/105258A1
The present invention narrows the space between wiring lines adjacent to each other, while suppressing decrease in the insulation reliability caused by ion migration between the wiring lines. According to the present invention, a semicon...  
WO/2018/106952A1
A wafer edge lift pin of an apparatus for manufacturing a semiconductor device is described. The wafer edge lift pin includes a top section containing a notch portion having a horizontal upwardly facing surface for supporting a wafer and...  
WO/2018/106627A1
A dual channel showerhead comprising a first plurality of channels formed in the back surface of the showerhead and extending from a first end to a second end, a second plurality of channels formed through the thickness of the showerhead...  
WO/2018/106502A1
Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physica...  
WO/2018/106886A1
The present disclosure relates to a method of depositing a polymer layer, including: providing a substrate, having a sensor structure disposed on the substrate, to a substrate support within a hot wire chemical vapor deposition (HWCVD) c...  
WO/2018/104513A1
The present invention concerns a method for transferring a thin film (3) onto a destination substrate (9) on one surface of which an adhesive layer (8) is present, characterised in that it comprises, starting from a temporary support (4)...  
WO/2018/105283A1
A horizontal articulated industrial robot equipped with a hand 3 on which an object to be transported is placed, an arm 4 having the hand 3 rotatably connected to the tip end side thereof, and a body part having the base end side of the ...  
WO/2018/105831A1
The present invention relates to a wafer carrier thickness measurement device capable of accurately measuring the thicknesses of the inner and outer peripheries of a wafer carrier in a noncontact manner. The present invention provides a ...  
WO/2018/104992A1
The objective of the invention is to wash and eliminate resists and metal residues effectively, in a Ge, SiGe or germanide layer washing process during semiconductor device production, without dissolving the Ge, the SiGe or the germanide...  
WO/2018/105306A1
The present invention provides a double-side polishing device carrier for a double-side polishing device which performs double-side polishing of a semiconductor silicon wafer, wherein the double-side polishing device carrier is disposed ...  
WO/2018/105716A1
The present invention provides a novel polymer, a composition, and a molded article. This polymer has a structural unit represented by general formula (1) (in the formula, X11 and X12 may be the same or different from each other, and eac...  
WO/2018/105520A1
A TFT substrate (105) having a source–gate connection (SG) arranged in a non-transmission/reception region (R2). The source–gate connection has: source lower connection wiring (3sg) included in a gate metal layer (3); a first opening...  
WO/2018/103751A1
A manufacturing method for a fan-out packaging structure, comprising the following steps: providing a packaging substrate (1) and using a liquid ink to print on the packaging substrate (1) to form a substrate solder mask layer (2); perfo...  
WO/2018/105427A1
A film-forming system used in a method according to one embodiment of the present invention is provided with a film-forming device and a transfer module. The film-forming device has: a chamber main body that provides a treatment chamber;...  
WO/2018/105113A1
A configuration provided with: an intake pipe which is provided for each zone to supply a gas for cooling a reaction pipe; a control valve with which the intake pipe is provided to adjust the flow volume of the gas; a buffer portion in w...  
WO/2018/105729A1
The present invention addresses the issues of: ON voltage (Von) increasing when only one accumulation layer is present, in comparison to when a plurality of accumulation layers are present; and turn off loss (Eoff) increasing as a result...  
WO/2018/105744A1
Accumulation layers have the function of reducing on voltage (Von), being the voltage between a collector and emitter when an IGBT is on, reducing same by accumulating a carrier. However, when the IGBT is turned off, the carrier contribu...  
WO/2018/104988A1
The purpose of the present invention is to provide an active gas generation device capable of generating a high-quality active gas. By means of electrical discharge generated in a discharge space (66) formed between a high voltage-side e...  
WO/2018/103678A1
A graphite boat side discharging mechanism provided with an inverted wafer detection device. A graphite boat (3) is placed on a graphite boat bearing base (2) of the side discharging mechanism. Multiple grooves in parallel along the whol...  
WO/2018/104741A1
A semiconductor device comprising a nominally or exactly (001) or equivalent orientation silicon substrate on which is grown directly a < 100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a...  
WO/2018/105589A1
A TFT substrate (105) having a dielectric substrate (1) and a plurality of antenna unit areas (U) arranged upon the dielectric substrate. Each of the plurality of antenna unit areas has a TFT (10) and a patch electrode (7PE) connected to...  
WO/2018/106816A1
Systems and methods for copper etch monitoring and control are described. Certain embodiments include utilizing thin-film cells to measure the absorbance of a copper etch solution to determine the etch rate of the solution. In another em...  
WO/2018/103599A1
An active switch array substrate and a fabrication method therefor, comprising: providing a substrate (10); plating a first metal layer on the substrate; performing a first photolithography process on the first metal layer to form a gate...  
WO/2018/105444A1
This probe pin (1) is provided with a plunger (10), a coil spring (20), and a connection member (30). The connection member (30) has a first end surface (32) that faces a third end part (12) of the plunger (10) and a second end surface (...  
WO/2018/105613A1
A tape for semiconductor processing, which is used for the purpose of dividing an adhesive layer along a semiconductor chip by means of expansion, and which sequentially comprises a substrate film, a gluing agent layer and an adhesive la...  

Matches 1 - 50 out of 1,007,311