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Matches 1 - 50 out of 1,059,066

Document Document Title
WO/2021/010208A1
A multilayer resin sheet 11 for sealing according to the present invention sequentially comprises a first resin sheet 1 for sealing and a second resin sheet 12 for sealing in one direction along the thickness direction. The first resin s...  
WO/2021/009884A1
An inspection device for performing inspection using an inspection image of a substrate having a plurality of components disposed thereon is provided with: a fixed-focus camera; a lifting/lowering mechanism for lifting/lowering the camer...  
WO/2020/225500A3
The invention relates to a method for manufacturing a power electronic module (1) by means of additive manufacturing, characterized in that it comprises the steps of: - depositing a layer of an electrically conductive nanoporous material...  
WO/2021/011229A1
Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may incl...  
WO/2021/011946A1
Aspects generally relate to a P-N junction varactor (102) that can be integrated with high electron mobility transistor (HEMT, 104) in a single device or die. The varactor and HEMT are fabricated with different materials forming various ...  
WO/2021/010004A1
This method for forming an insulation film on a substrate has reacting, as film-forming gases, an organic silicon compound gas represented by formula (1) below and a non-oxidizing hydrogen-containing gas, and in a state in which at least...  
WO/2021/010966A1
A measurement assembly for measuring a deposition rate of evaporated material is described. The measurement assembly includes a capacitor (120) arranged within a deposition compartment (110). The deposition compartment (110) has an inlet...  
WO/2021/008781A1
The invention provides a substrate shape measuring device (SSM), comprising: a substrate support (WS) to support a substrate (W) having a main surface (MS), said main surface of the substrate when supported by the substrate support subst...  
WO/2021/011761A1
A substrate processing method for area selective deposition includes providing a substrate containing a first film, a second film, and a third film, forming a first blocking layer on the first film, forming a second blocking layer on the...  
WO/2021/011246A1
Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for pr...  
WO/2021/009619A1
The present invention provides a transistor with a high ON-current and a semiconductor device that enables high productivity. The present invention comprises: a first insulator; a second insulator on the first insulator; a third insulato...  
WO/2021/010287A1
This processing device for processing an object being processed is provided with a modifying unit for forming a plurality of modified layers in a surface direction, by irradiating with laser light the inside of the object being processed...  
WO/2021/010171A1
Provided are: a bonding film that exhibits sufficient contact heat resistance and high reliability, achieves a preferable bond with respect to a substrate irrespective of the type of electrodes of a semiconductor element, and involves an...  
WO/2021/010237A1
A first raw material solution containing at least aluminum is atomized to generate first atomized droplets, a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets; subsequ...  
WO/2021/009377A1
Method for producing coating materials by conducting at least following two steps: - a first step in which a coating layer of a first material is synthesized on the surface of a substrate to be coated, wherein the coating layer is produc...  
WO/2021/011101A1
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneat...  
WO/2021/010236A1
A substrate working device provided with: a pair of first substrate chucks that hold a substrate from below with a first main surface of the substrate facing upward; a pair of second substrate chucks that hold the substrate from below wi...  
WO/2021/009586A1
Provided is a semiconductor device capable of efficiently reading weighting factors and efficiently performing multiply-accumulate operations. The semiconductor device comprises multiply-accumulate circuitry and a storage device. The mul...  
WO/2021/011525A1
Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpie...  
WO/2021/010205A1
In this sealing resin sheet, the 85°C viscosity (v0.01) at a shear rate of 0.01 rad/s is at least 8×105 Pa⋅s, and the 85°C viscosity (ν0.1) at a shear rate of 0.1 rad/s is less than 8×105 Pa⋅s.  
WO/2021/007769A1
The present disclosure relates to the field of display technology, and provided thereby are a display substrate, a fabrication method therefor and a display apparatus, the method comprising: forming a switch unit on a base substrate; for...  
WO/2021/010593A1
A micro light emitting diode (LED) transfer method is provided. The micro LED transfer method includes: preparing a transfer substrate including a plurality of micro LEDs, the plurality of micro LEDs having electrodes disposed in a first...  
WO/2021/011166A1
Embodiments described herein relate to methods and apparatus for post exposure processing. More specifically, embodiments described herein relate to field-guided post exposure bake (iFGPEB) chambers and processes, In one embodiment, a su...  
WO/2021/008939A1
The present invention provides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a su...  
WO/2021/011253A1
Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for pr...  
WO/2021/010428A1
Provided is a semiconductor device that is particularly useful as a power device and achieves improvement in crystal defects that are caused by stress concentration in a semiconductor layer that is caused by an insulator film. A semicond...  
WO/2021/011233A1
Exemplary substrate processing systems may include a transfer region housing defining a transfer region, and including substrate supports and a transfer apparatus. The transfer apparatus may include a central hub having a housing, and in...  
WO/2021/009980A1
This photocurable composition is used in formation of a resin layer of an uneven structural body comprising a substrate and the resin layer which is provided on the substrate and has a minute unevenness in a surface thereof. A cured film...  
WO/2021/010284A1
This processing device comprises: a holding part that holds an object to be processed; a modification part that irradiates the inside of the object to be processed with laser light to form a plurality of condensing points along the surfa...  
WO/2021/010204A1
A resin sheet 1 for sealing according to the present invention contains a thermosetting resin and seals an element. The complex viscosity η* of this resin sheet for sealing is evaluated by means of dynamic viscoelasticity measurement (1...  
WO/2021/009606A1
A method of forming a semiconductor structure includes forming a nanosheet stack including alternating layers of a sacrificial material and a channel material over a substrate, the layers of channel material providing nanosheet channels ...  
WO/2021/011910A1
A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may ...  
WO/2021/009838A1
The present invention has a step for forming a film which is embedded in a recess formed on a surface of a substrate by performing, for a predetermined number of times, a cycle including (a) a step for feeding a quasi-catalyst to the sub...  
WO/2021/007737A1
A detection circuit, used for detecting an influence of stress on an electric characteristic. The detection circuit comprises a PMOS transistor dominated self-oscillation ring (101), an NMOS transistor dominated self-oscillation ring (10...  
WO/2021/010382A1
This method for manufacturing a silicon carbide semiconductor device includes: a step of preparing a silicon carbide substrate; a step of forming an insulating film on one main surface of the silicon carbide substrate; a step of forming ...  
WO/2021/009459A1
The invention relates to a process for hydrophilically bonding a first substrate (S1) to a second substrate (S2), comprising: - bringing the first substrate (S1) and the second substrate (S2) into contact, so as to form a bonding interfa...  
WO/2021/010024A1
Provided are a semiconductor device which can reduce the substrate bias effect, and an imaging device which uses this semiconductor device. The semiconductor device comprises: a semiconductor substrate; and a field effect transistor prov...  
WO/2021/010616A1
A display panel and a display device comprising same are provided. The display panel, and the display device comprising same, comprise: a display substrate in which a display area and a pad area disposed around the display area are defin...  
WO/2021/010405A1
A method for producing a silicon carbide semiconductor device has: a step for preparing a silicon carbide substrate; a step for forming an insulating film on one main surface of the silicon carbide substrate; a step for forming a contact...  
WO/2021/010952A1
Embodiments described herein provide a lid plate for independent control of plasma density and gas distribution within the interior volume of a chamber. The lid assembly includes a gas distribution assembly comprising a plurality of diff...  
WO/2021/011303A1
A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an o...  
WO/2021/011945A1
Aspects generally relate to a P-N junction varactor (102) that can be integrated with high electron mobility transistor (HEMT, 104) in a single device or die. The varactor and HEMT are fabricated with the same materials forming various l...  
WO/2021/010563A1
A light-emitting element, a method for manufacturing same, and a display device are provided. The light-emitting element comprises: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first ...  
WO/2021/010127A1
The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a cr...  
WO/2021/009930A1
A reconfigurable circuit including: a crossbar switch circuit including switch cells disposed at all or part of cross points; first high-voltage transistors connected to a first ground line and including drain terminals each of which are...  
WO/2020/214227A3
A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist lay...  
WO/2021/009591A1
The present invention provides a semiconductor device having a novel configuration. The semiconductor device has multiple constant-current circuits to which a digital signal is applied. The constant-current circuit has first to third tra...  
WO/2021/009077A1
In this patent application, a new Metal Oxide Semiconductor MOS planar cell design concept is proposed. The inventive power semiconductor includes a planar cell forming a horizontal channel and a plurality of trenches, which are arranged...  
WO/2021/010286A1
Provided is a processing device that processes an object to be processed, the processing device comprising: a holding unit that holds the object to be processed; a modification unit that projects laser light into the object to be process...  
WO/2021/010302A1
A uniform plasma is generated along the longitudinal direction of an antenna while making it possible to cope with an increase in size of a substrate by using a long antenna. The present invention comprises: a high-frequency power supply...  

Matches 1 - 50 out of 1,059,066