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Matches 1 - 50 out of 1,025,478

Document Document Title
WO/2019/090762A1
Provided is a method for forming gates (1100, 1300), containing forming a first patterned photoresist layer (310) on a substrate (200); forming spacer walls (510d, 510s) on the side wall of said first patterned photoresist layer (310), s...  
WO/2019/090911A1
The present invention discloses an organic thin film transistor array substrate and a manufacturing method therefor, and a display device. The organic thin film transistor array substrate and the manufacturing method therefor comprise: p...  
WO/2019/091242A1
A process editing and acquisition method and a process data protection method for a solar cell production apparatus, and a device thereof. The process editing method comprises: storing, on a process editing terminal, hardware information...  
WO/2019/091574A1
Methods of aligning a carrier, particularly a mask carrier, are described. According to an embodiment, the method includes: transporting a carrier (110) in a transport direction (T), inserting a first alignment element (152) of an alignm...  
WO/2019/091662A1
A lithographic apparatus comprising a substrate storage module having a controllable environment for protecting lithographically exposed substrates from ambient air. The substrate storage module is configured to store at least twenty sub...  
WO/2019/091859A1
The present invention relates to a cleaning composition comprising a) from 1 to 5% by weight of total weight of the composition of ammonium fluoride; b) from 30 to 70% by weight of total weight of the composition of a water soluble organ...  
WO/2019/091421A1
An interconnection structure for metal lines, a method of fabricating the same, and a semiconductor device are provided. A plurality of interconnection structure layers (20) are stacked one above another on a substrate (10) with the supp...  
WO/2019/091493A1
An asymmetric fin field-effect transistor (FinFET) in a memory device, a method for fabricating the FinFET and a semiconductor device are disclosed. In the provided FinFET and method, each of the active areas comprises a fin, a length of...  
WO/2019/094288A1
A dispense arm device for controllably discharging a fluid onto a substrate includes a dispense head coupled to and contained within an arm portion of the dispense arm device, wherein the dispense head having a valve assembly that is con...  
WO/2019/094224A1
Methods for forming a capping protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming capping protection on a metal line in an inte...  
WO/2019/090861A1
A thin film transistor, a method for manufacturing the thin film transistor, and a liquid crystal display device. The thin film transistor (1) comprises a substrate (10), a gate (11), a gate insulating layer (12), an active layer (13), a...  
WO/2019/093348A1
This wiring structure (10) is provided with a glass substrate (11), an intermediate layer (12) disposed on the glass substrate (11), and a wiring layer (13) disposed on the intermediate layer (12). The wiring layer (13) contains copper. ...  
WO/2019/094604A1
A thermal control method and assembly uses an expansion chamber structured to receive liquid nitrogen and expand the liquid to nitrogen gas having a first temperature. The nitrogen gas having the first temperature is provided to a system...  
WO/2019/090866A1
A method and an apparatus for acquiring a thin film parameter value to be measured, the method comprising: acquiring a thickness of a thin film to be measured and an observed white light reflectance spectrum of the thin film to be measur...  
WO/2019/093151A1
The present technology relates to a solid-state image pickup device capable of suppressing deterioration of dark current characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion sec...  
WO/2019/093620A1
Provided are an organic film CMP slurry composition comprising ceria, a cerium-containing ceria activating agent, and an inorganic film surface protecting agent, and an organic film polishing method using the same.  
WO/2019/090868A1
Provided is are manufacturing method of a vertical-structure thin film transistor and the vertical-structure thin film transistor. The manufacturing method comprises the steps of providing a substrate (210) (S110); respectively forming a...  
WO/2019/093149A1
The present technology relates to a solid-state image capture device with which it is possible to suppress degradation of dark characteristics, and to an electronic apparatus. The solid-state image capture device is provided with: a phot...  
WO/2019/091201A1
The present invention relates to a packaging bonding wire heating combination unit, comprising a bottom plate and a hot-pressing plate, wherein the bottom plate is used for providing a pressure welding platform and the temperature requir...  
WO/2019/093370A1
This ceramic includes, in mass%, 20.0-60.0% of Si3N4, 25.0-70.0% of ZrO2, and 5.0-15.0% of at least one selected from MgO, Y2O3, CeO2, CaO, HfO2, TiO2, Al2O3, SiO2, MoO3, CrO, CoO, ZnO, Ga2O3, Ta2O5, NiO, and V2O5. The ceramic has a ther...  
WO/2019/091694A1
There is disclosed a substrate holder, a method of manufacturing this substrate holder and a lithographic apparatus comprising this substrate holder. In one arrangement, there is provided a substrate holder for use in a lithographic appa...  
WO/2019/092933A1
The purpose of the present invention is to provide: a filmy adhesive capable of preventing the back surface of a semiconductor chip, the front surface of a substrate, or the front surface of a heat sink from being partially damaged by th...  
WO/2019/094860A1
In described examples, a device (330) mounted on a substrate (310) includes an encapsulant (508). In at least one example, an encapsulant barrier (504, 506) is deposited along a scribe line, along which the substrate (310) is singulatabl...  
WO/2019/093338A1
A surface S side is irradiated with an SF6 gas plasma to etch a semiconductor wafer 1 which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent 1...  
WO/2019/092935A1
A method involving: irradiating SF6 gas plasma from the obverse face side and thereby etching a semiconductor wafer 1 exposed at street portions thereof, dividing and fragmenting the wafer into individual semiconductor chips 7; adhering ...  
WO/2019/092541A1
Provided is a semiconductor device having excellent reliability. This device is provided with a first insulating body, a first oxide disposed upon the first insulating body, a second oxide disposed upon the first oxide, a first conductor...  
WO/2019/094217A1
A method, apparatus, and program for build surface mapping and recovery for additive manufacturing. The method may include fabricating an object by additive manufacturing wherein the topology of a build surface is determined. An additive...  
WO/2019/091561A1
A method includes contactlessly levitating a substrate arrangement (210). The substrate arrangement (210) includes a substrate (10). The method includes contactlessly levitating a mask arrangement (220). The mask arrangement (220) includ...  
WO/2019/093479A1
The present technique relates to: a solid-state imaging device which is able to prevent deterioration of the Dark characteristics; and an electronic device. A solid-state imaging device according to the present invention is provided with...  
WO/2019/094102A1
Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be ...  
WO/2019/094310A1
A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not lim...  
WO/2019/093013A1
This semiconductor light emitting element 10 is provided with: an n-type cladding layer 24 of an n-type aluminum gallium nitride (AlGaN) semiconductor material; an active layer 26 of an AlGaN semiconductor material, which is provided on ...  
WO/2019/093133A1
Provided is a dicing method with which it is possible to obtain a high yield even when a chip is cut with a narrow width. Provided is a method of dividing a substrate having a device formed thereon into individual chips. The methods incl...  
WO/2019/093244A1
Provided is a substrate treatment apparatus (1), comprising: a carrier block (3) in which carriers (11) receiving a plurality of wafers W can be placed; a liquid treating unit U1 and a heat treating unit U2 for treating the wafers W; a t...  
WO/2019/092816A1
This TMR element comprises a magnetic tunnel joining section, a side wall section that covers a side surface of the magnetic tunnel joining section, and a fine particle region that is provided in the side wall section, wherein the side w...  
WO/2019/091634A1
According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: prod...  
WO/2019/090925A1
Provided are a liquid addition system (100) and method. The system (100) comprises a liquid storage tank (10), a sensor (20), a human-computer interaction module (30) and a controller (40). The liquid storage tank (10) is used for storin...  
WO/2019/090880A1
A method for manufacturing a fast soft recovery diode chip. The manufacturing method involves forming a doping peak region by means of epitaxial growth or forming a platinum-enriched center of a diode by means of the technique of etching...  
WO/2019/091708A1
A method of cleaning a surface to remove a contaminant therefrom, the method comprising the steps of oxidizing at least a portion of the contaminant and passing a stream of carbon dioxide snow over the contaminant. An apparatus for clean...  
WO/2019/093200A1
This substrate processing method comprises: closing a solvent valve to hold, in a tip-end flow passageway, isopropyl alcohol (IPA), of the IPA that has passed the solvent valve, other than the IPA that has passed the solvent valve initia...  
WO/2019/093232A1
This flux collecting device (10) comprises: a stage (12) having a recessed portion (13) for collecting flux (51); a flux pot (20) which is an annular member having a through hole (21) into which the flux (51) is introduced, which recipro...  
WO/2019/090832A1
A display apparatus and display panel, wherein the display panel comprises an array panel and a display apparatus, and the display apparatus comprises a display apparatus body (101) and a magnetic member (102), and the magnetic member (1...  
WO/2019/093015A1
According to the present invention, a tungsten film (16) which serves as a contact plug is embedded in a contact hole (14) of an interlayer insulating film (13), with a barrier metal (15) being interposed therebetween. The interlayer ins...  
WO/2019/094481A1
A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second...  
WO/2019/092938A1
Provided are a semiconductor substrate, a semiconductor substrate laminate, and an endoscope that are configured to enable further size reduction while preventing influences from the outside. A semiconductor substrate 100 comprises: a si...  
WO/2019/093122A1
The present disclosure relates to a solid-state image pickup element whereby light blocking performance can be improved, a manufacturing method, and an electronic apparatus. This solid-state image pickup element has a laminated structure...  
WO/2019/092842A1
An electronic module, having: a sealing part 90; back surface exposure conductors 10, 20, 30 having back surface exposure-side terminal parts 11, 21, 31 projecting outwards from the side surface of the sealing part 90 and back surface ex...  
WO/2019/090924A1
Provided is a flexible display panel (100), comprising a flexible substrate (102), a barrier layer (103) formed on the flexible substrate (102), a buffer layer (104) formed on the barrier layer (103), an active layer (112) and a gate ins...  
WO/2019/093427A1
A method for producing a joined body is provided with: a first step in which a layered body is prepared, said layered body being provided with a first member comprising metal pillars on the surface thereof, a second member comprising an ...  
WO/2019/092521A1
A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged ups...  

Matches 1 - 50 out of 1,025,478