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WO/2024/080280A1 |
An adsorption substrate according to the present disclosure has a substrate, a conductive layer and a projecting section. The substrate has insulative properties. The substrate has a first surface that holds a processing target, and a se...
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WO/2023/076607A9 |
A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on a...
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WO/2024/081815A1 |
Spectral data associated with one or more regions of a surface of a substrate is identified. The substrate has been processed according to one or more first operations of a process recipe that is unknown to a system controller for the ma...
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WO/2024/080530A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/081221A1 |
Methods for depositing amorphous silicon films via physical vapor deposition processes are disclosed. In some embodiments, a method of depositing amorphous silicon in a physical vapor deposition (PVD) process chamber includes (a) deposit...
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WO/2024/077416A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The machining control method for a semiconductor device comprises: acquiring an integrated circui...
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WO/2024/079392A1 |
A method of manufacturing a semiconductor device comprising a polymer film comprising a polymer obtained by polymerization of compounds having the general formula (I): X1mR1 3-mSi-R3-(R5 2Si-O)n-Si-R4-SiX2 PR2 3-P wherein each X1 and X2 ...
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WO/2024/080256A1 |
The present invention discloses a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises: a first laminate formation step for forming a first laminate in which a semiconductor wafe...
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WO/2024/080192A1 |
Provided are: a semiconductor device configured so that the degradation of the characteristics thereof is suppressed; a method for manufacturing a semiconductor device; and an optical detection device. The semiconductor device comprises:...
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WO/2024/077811A1 |
Embodiments of the present disclosure provide an intermediate chip, and a processing method for a chip stacked package. The intermediate chip has a front surface and a back surface which are opposite to each other, the front surface of t...
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WO/2024/081473A1 |
Examples are disclosed relate to using an inhibitor with a silicon oxide ALD deposition process to refill recesses in STI regions. One example provides a method of processing a substrate. The method comprises depositing an inhibitor on t...
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WO/2024/081253A1 |
Disclosed herein are systems and methods for reducing startup time of an equipment front end module (EFEM). The EFEM may include an EFEM chamber formed between a plurality of walls, an upper plenum above the EFEM chamber, the upper plenu...
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WO/2024/078335A1 |
Disclosed are a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate; forming a protective layer in a first region of the substrate...
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WO/2024/078510A1 |
The present disclosure relates to a wafer system, a preparation method, a processing method, a power supply method, a device and a medium. The wafer system comprises at least one wafer processing apparatus and an auxiliary function appar...
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WO/2024/079610A2 |
Described herein is a method of aging a wet gel material. The method comprises aging a wet gel material by heating the wet gel material in an aging fluid at an aging temperature above the normal boiling point of the aging fluid. This is ...
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WO/2024/080180A1 |
This liquid material vaporizer comprises: a gas-liquid mixing section that mixes a liquid material and a carrier gas to generate a gas-liquid mixture; a carrier gas supply channel that supplies the carrier gas to the gas-liquid mixing se...
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WO/2024/080237A1 |
Provided is a siloxane compound that can be used as a siloxane-containing film precursor with which it is possible, in the formation of a silicon-containing film, to form a film by atomic layer deposition (ALD) even in high-temperature c...
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WO/2024/079996A1 |
The present invention relates to a method for producing a bonded light-emitting element wafer having removed therefrom a defective part, the method being characterized by comprising: a step in which a light-emitting element structure tha...
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WO/2024/079979A1 |
A wiring according to the present disclosure comprises a plurality of divided wirings through which AC current flows. The number of divided wirings is 4 or greater. If Sp denotes the inter-wiring space between two adjacent divided wiring...
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WO/2024/080833A1 |
The present invention provides a slurry composition for chemical mechanical polishing and a manufacturing method therefor, wherein the slurry composition is capable of achieving a high polishing rate for low dielectric constant films rel...
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WO/2024/077874A1 |
Disclosed in the present invention is a selective etching solution for a 3D NAND structural sheet of silicon nitride/silicon oxide; and the etching solution comprises a silane coupling agent, phosphoric acid, and water. The etching solut...
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WO/2024/079111A1 |
The invention consists of a device for holding, positioning and/or moving an object in a vacuum and comprises a base, an end effector having a substrate holder, a linear drive coupled to the end effector via a carriage, optionally a vert...
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WO/2024/080013A1 |
The present invention is a bonding defect removal method for a bonded wafer that is bonded to a transparent substrate by curing a thermosetting bonding member, said bonded wafer having a light-emitting element structure that has an activ...
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WO/2024/080253A1 |
The present disclosure relates to a method for producing a semiconductor device, the method comprising: a resin film formation step in which a resin film is formed on a semiconductor wafer, the resin film containing a resin that is decre...
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WO/2024/077768A1 |
A memory and a manufacturing method therefor. The memory comprises a plurality of transistors, and further comprises: a substrate (40); a plurality of silicon pillars (10), which correspond to the plurality of transistors on a one-to-one...
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WO/2024/079575A1 |
Provided is a semiconductor device having a novel configuration. This semiconductor device has: a first element layer having a bit line drive circuit; a second element layer having a first switch circuit, a first memory cell, and first w...
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WO/2024/081509A1 |
Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing p...
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WO/2024/050912A9 |
An apparatus and method for extracting an electron microscope sample. The apparatus comprises a body (1), a needle tube (2), and a first pressure adjustment mechanism (3). The body (1) is provided with a first channel (12) and a liquid s...
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WO/2024/081194A1 |
A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl c...
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WO/2024/077908A1 |
The present application relates to the technical field of chip packaging, and discloses a co-packaged optics structure and a manufacturing method therefor. The method comprises: providing a redistributed layer which is integrated with an...
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WO/2024/077827A1 |
The present disclosure relates to a semiconductor structure preparation method and a semiconductor structure. The semiconductor structure preparation method comprises: providing a substrate; according to a preset rule, forming, on the su...
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WO/2024/081453A1 |
Novel high purity dimethylaluminium chloride compositions are provided that are suitable for semiconductor applications, such as atomic layer etch and aluminum ion implantation. The reduction or minimization of specified gaseous impuriti...
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WO/2024/078682A1 |
The disclosure relates to a build-up substrate (110) for a power package (100). The build-up substrate (110) comprises an electrically insulating layer (120) and a plurality of electrically conductive pads (131a-e) encapsulated in the el...
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WO/2024/080148A1 |
Provided is a method for manufacturing a semiconductor device , the method involving: using a semiconductor element to be inspected as a first semiconductor element, and using a semiconductor element for acquiring teaching data as a seco...
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WO/2024/077586A1 |
The present invention relates to a machining control method for a semiconductor device, and a high-energy particle beam lithography device. The method comprises: by means of a pixel point recognition policy, recognizing, from an i-th lay...
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WO/2024/077761A1 |
A heat dissipation apparatus used in a gas-liquid mixed medium and a preparation method therefor, relating to the field of heat dissipation. The heat dissipation apparatus comprises a heat dissipation plate and a plurality of supporting ...
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WO/2024/081183A1 |
A substrate processing chamber includes a pedestal and a baffle. The pedestal is arranged in the substrate processing chamber. The pedestal includes a base portion and a stem portion. The base portion is greater in diameter than the stem...
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WO/2024/078665A1 |
A method according to the invention for applying an adhesive layer (28) to a module-carrier tape (12) provided with a multiplicity of chip modules (8) comprises the following steps, with surfaces (14) of the chip modules (8) being raised...
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WO/2024/078079A1 |
The present invention relates to the technical field of semiconductor accessory manufacturing, and provides a semiconductor device assembly and a preparation method therefor and the use thereof. The semiconductor device assembly comprise...
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WO/2024/078830A1 |
Disclosed herein are embodiments that relate to an electrostatic wafer clamps and methods for forming and modifying electrode structures for electrostatic wafer clamps. Wafer clamps include electrode structures in a dielectric layer with...
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WO/2024/077552A1 |
Disclosed in the present application are a 3D stacked packaging structure and a manufacturing method therefor. The 3D stacked packaging structure comprises a bottom-layer structure and a top-layer structure, wherein the top-layer structu...
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WO/2024/079116A1 |
Device for conveying a wafer-shaped article, comprising: a support having a support surface; one or more gas channels in the support having one or more outlets in the support surface; and one or more grooves in the support surface for re...
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WO/2024/077714A1 |
Embodiments of the present disclosure relate to the field of semiconductors, and provide a manufacturing method for a semiconductor structure, and a structure thereof. The manufacturing method for a semiconductor structure comprises: pro...
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WO/2024/078142A1 |
An online characterization method for a multi-junction solar cell comprises: by means of irradiating a multi-junction solar cell by using at least one characteristic light corresponding to subcells of the multi-junction solar cell so as ...
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WO/2024/080022A1 |
[Problem] To adjust energy of only ions of a specific type that are included in plasma. [Solution] This plasma treatment device comprises: a first electrode and a second electrode that face the inside of a treatment container which accom...
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WO/2024/079791A1 |
A surface inspecting device (1) according to the present invention comprises: a plate-shaped sample holding member (3) capable of holding a sample (2); a rotation drive unit (19) for rotating the sample holding member (3); a supporting m...
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WO/2024/080531A1 |
The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to a plasma-resistant glass, an...
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WO/2024/079880A1 |
This wafer stage 10 is provided with: a ceramic plate 20 which is provided, on the upper surface thereof, with at least a wafer stage part 22; a cooling plate 30 which is bonded to the lower surface of the ceramic plate 20, and has a coo...
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WO/2024/078073A1 |
Disclosed in the present disclosure are a semiconductor device, and a manufacturing method therefor. The semiconductor device comprises: a substrate, a buffer layer, a channel layer and a barrier layer which are stacked successively; a c...
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WO/2024/049769A3 |
Patterned assemblies with a patterned release layer, methods of making, and methods of using are described herein. The assemblies with a patterned release layer may include donor plates, wafers, components (e.g. microelectronic component...
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