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Matches 1 - 50 out of 998,620

Document Document Title
WO/2018/012313A1
The present invention is a wire saw device that includes: a wire feed reel that lets out wire; wire rows formed of the wire spirally wound around a plurality of wire guides; a wire winding reel on which the wire is wound; and a workpiece...  
WO/2018/010481A1
Array substrate, display panel, and display device, and their fabrication methods are provided. An array substrate includes a plurality of subpixels, each including a first electrode (20) and a second electrode (30), electrically isolate...  
WO/2018/012547A1
This method for producing a semiconductor substrate with a p-type diffusion layer comprises: a step wherein a p-type diffusion layer-forming composition, which contains a compound containing boron, is applied onto a semiconductor substra...  
WO/2018/012049A1
Provided is a technology of forming a high-quality thin film, while maintaining a high throughput. The present invention is provided with: a substrate placing table that is rotatably provided in a treatment chamber; a plurality of substr...  
WO/2018/011648A1
Provided is a novel metal oxide. Specifically provided is a metal oxide having a plurality of energy gaps, wherein the metal oxide is provided with a first layer in which the energy level at the bottom of the conduction band of the energ...  
WO/2018/012585A1
Provided is a light emitting diode wherein a nitride semiconductor multilayer film comprises a first nitride semiconductor layer, a second nitride semiconductor layer and a light emitting layer provided between the first nitride semicond...  
WO/2018/012468A1
Provided is a polishing body (LHA pad) which is used for polishing by a CMP method and which is capable of achieving stable polishing performance and uniformly polishing a workpiece. Also provided is a manufacturing for the polishing bod...  
WO/2018/012173A1
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). This polishing composition includes silica of which the maximum peak h...  
WO/2018/013896A1
Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor su...  
WO/2018/013847A1
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10....  
WO/2018/010214A1
The present invention provides a method for manufacturing a metal oxide thin film transistor array substrate. The thin film transistor adopts a top-gate coplanar structure, which can effectively reduce stray capacitance; an active layer,...  
WO/2018/012546A1
Provided is a manufacturing method for a semiconductor laminated film, which comprises a step for forming a semiconductor layer containing silicon and germanium on a silicon substrate via sputtering, wherein, during sputtering, the film ...  
WO/2018/010545A1
A Silicon Carbide (SiC) power device (100, 200, 300) employing a heterojunction termination comprises: a cathode electrode (110, 210, 310), a substrate layer (120, 220, 320), an N-type SiC extension layer (130, 230, 330), an anode electr...  
WO/2018/013769A1
Die handling systems and methods of use for preparing or processing dies from multiple types of pre-expanded wafer materials. The die handling systems are configured in a modular fashion, allowing for concurrent processes to expand the w...  
WO/2018/011373A1
A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring ...  
WO/2018/012174A1
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). The present invention relates to a polishing composition which include...  
WO/2018/012241A1
The present invention relates to a semiconductor device and is provided with: a first semiconductor layer which is disposed on a first main surface of a semiconductor substrate; a plurality of first semiconductor regions which are select...  
WO/2018/012176A1
The present invention provides a polishing composition which is capable of polishing an object to be polished, with high polishing speed, and few scratches (defects). This polishing composition includes silica of which the maximum peak t...  
WO/2018/010727A1
Established PV layer sequences and corresponding production methods are disadvantageous in that they are costly processes and require expensive pure starting materials in order to allow PV activity to be reliably provided. Thus, the aim ...  
WO/2018/012017A1
Provided are: an electroconductive coating material capable of forming, by spray coating, a shielding layer which has satisfactory shielding properties and is satisfactory in terms of adhesion between the ground circuits and the electroc...  
WO/2018/013271A1
An apparatus for processing substrates is described. More particularly, embodiments of the present disclosure relate to an improved substrate support for heating and cooling substrates using turbulent flow during processing. By creating ...  
WO/2018/010330A1
Provided in the present invention is a method for utilizing ultraviolet oxidation in implementing and regulating graphene film patterning, comprising: step 1: utilizing a xenon lamp excimer ultraviolet oxidation method and a hard mask in...  
WO/2018/012510A1
This semiconductor device comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer; an MIS transistor structure wh...  
WO/2018/013614A2
A photoresist material is deposited, patterned, and developed on a backside of a wafer to expose specific regions on the backside of chips for etching. These specific regions are etched to form etched regions through the backside of the ...  
WO/2018/011759A1
Described is machine (1) for removing an adhesive sheet (101) formed by a film (103) and by an adhesive layer (104) applied to the film (103) by a corresponding supporting sheet (102) comprising a frame (2); a seat (3) for the adhesive s...  
WO/2018/011646A1
A novel metal oxide is provided. A semiconductor device with favorable electrical characteristics is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band mi...  
WO/2018/012654A1
An introduction device for manufacturing a silicon semiconductor ingot according to the present invention includes: a body part in which a lower portion thereof is open and an accommodating space is formed inside; and a door part that is...  
WO/2018/013976A1
Dielectric materials with optimal mechanical properties for use in laser ablation patterning are proposed. These materials include a polymer selected from the group consisting of polyureas, polyurethane, and polyacylhydrazones. New metho...  
WO/2018/013427A1
A substrate processing apparatus including a frame (106), a first SCARA arm (110) having an end effector (110E) and being configured to extend and retract along a first axis, a second SCARA arm (120) having an end effector (120E) and bei...  
WO/2018/012097A1
An inner periphery-side cutoff part (X1), in which the polishing surface of an upper plate (12) inclines upwards towards the inner periphery part of the upper plate (12), and an inner periphery-side cutoff part (Y1), in which the polishi...  
WO/2018/013421A1
Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body; and a plurality of holding elements arranged on a surface of the substant...  
WO/2018/011769A1
A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and...  
WO/2018/011645A1
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. ...  
WO/2018/011359A1
The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple ...  
WO/2018/012783A1
A chuck structure for semiconductor post-processing may comprise: a heating plate having a heating element embedded therein, in which the heating element generates heat by a power source applied from the outside, and a first vacuum line ...  
WO/2018/012267A1
A flow path structure according to an embodiment is provided with a member. The member has an outer surface and is provided with a plurality of first paths open to the outer surface. At the time of discharging fluid from the plurality of...  
WO/2018/010500A1
Apparatus and method for semiconductor polycrystallization are provided. The apparatus includes a plurality of ejector outlets for ejecting a heated gas to polycrystallize an amorphous semiconductor to produce a polycrystalline semicondu...  
WO/2018/010439A1
An indium tin oxide film (7), a method for preparing same, an array substrate comprising the indium tin oxide film (7), and a display device comprising the array substrate. The method for preparing the indium tin oxide film (7) comprises...  
WO/2018/011731A1
A donor substrate (502; 602; 702) in a layer transfer process, is stabilized by attaching a backing substrate (504; 604; 703). The backing substrate (504; 604; 703) allows thermal and mechanical stabilization during high-power implant pr...  
WO/2018/010056A1
A reverse conducting insulated gate bipolar transistor structure and a corresponding manufacturing method therefor, and a high-performance RC-IGBT structure capable of being manufactured without a thin-wafer process; provided is an RC-IG...  
WO/2018/011587A1
An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; ...  
WO/2018/009974A1
The present disclosure provides methodologies for manufacturing high efficiency silicon photovoltaic devices using hydrogen passivation to improve performance. The processing techniques disclosed use tailored thermal processes, sometimes...  
WO/2018/013459A1
A method of fabricating ultra-thin semiconductor devices includes forming an array of semiconductor dielets mechanically suspended on a frame with at least one tether connecting each semiconductor dielet of the array of semiconductor die...  
WO/2018/010151A1
A preparation method for a field effect transistor and a field effect transistor, relating to the field of technological development of field effect transistors. The preparation method comprises: forming a source electrode (2), a drain e...  
WO/2018/013355A1
Methods and apparatus for processing an image of a beam generated by an optical system to extract information indicative of an extent of damage to optical elements in the optical system. Also disclosed is a beam image and analysis tool c...  
WO/2018/010067A1
A field-effect transistor and a manufacturing method thereof related to the technical field of electronic components. The field-effect transistor comprises: a substrate (101), a channel layer (102) provided on the substrate (101), a sour...  
WO/2018/010986A1
The apparatus comprises a susceptor; elongated holes passing through the susceptor; a wafer lifting shaft; wafer lifting pins led through the elongated holes; a susceptor carrying shaft; susceptor carrying arms; susceptor supporting pins...  
WO/2018/012253A1
[Problem] To provide a novel resist underlayer film forming composition which contains a compound having a hydantoin ring. [Solution] A resist underlayer film forming composition which contains: a compound that has at least two substitue...  
WO/2018/013086A1
A composite wafer includes a first silicon die with a first top surface; and a polymer substrate with a top surface and a bottom surface. The silicon die is embedded in the polymer substrate such that the top surface of the substrate and...  
WO/2018/012300A1
Provided is a method for producing a laminated substrate by laminating a first substrate and a second substrate, the method comprising a step for determining whether the first substrate and second substrate satisfy predetermined conditio...  

Matches 1 - 50 out of 998,620