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Matches 1 - 50 out of 1,030,605

Document Document Title
WO/2019/156857A1
Methods, systems, and devices for memory cells with asymmetrical electrode interfaces are described. A memory cell with asymmetrical electrode interfaces may mitigate shorts in adjacent word lines, which may be leveraged for accurately r...  
WO/2019/156008A1
A kit having: a curable composition for imprinting, that includes a polymerizable compound having an aromatic ring; and an underlayer film forming composition for imprinting, that includes a polymer and a solvent. The polymer includes at...  
WO/2019/154630A1
An improved treatment tool (100) for reconditioning the top surfaces of a plurality of projections (20) of a substrate support (60) in a lithographic tool. The improved treatment tool includes a reconditioning surface which is rough rela...  
WO/2019/155947A1
The purpose of the present invention is to provide a carbon nanotube aggregate which exhibits excellent grip force in room temperature and high temperature environments. This carbon nanotube aggregate, in which a plurality of carbon nano...  
WO/2019/155782A1
The present invention simplifies the formation of an isolation region of a semiconductor substrate having an increased film thickness. This semiconductor device is provided with: an element region, a wiring region, an external connection...  
WO/2019/156761A1
An integrated circuit includes a silicon carbide (SiC) epitaxial layer disposed on a SiC layer, wherein the SiC epitaxial layer has a first conductivity-type and the SiC layer has a second conductivity-type that is opposite to the first ...  
WO/2019/155519A1
With the advancement of miniaturization of semiconductor devices, scribe areas on wafers have decreased. As a result, the need has arisen to diminish the size of a TEG that is to be disposed in a scribe area, and also to efficiently plac...  
WO/2019/157023A1
A pedestal for a semiconductor processing chamber, comprising a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body; and a second body comprising a ceramic material, whe...  
WO/2019/156364A1
A mask cleaning liquid composition according to the present invention is characterized by comprising: an amide-based compound represented by chemical formula 1; and an alkaline compound. The mask cleaning liquid composition according to ...  
WO/2019/153435A1
Disclosed in the present invention are an electrode structure, comprising a substrate, an indium tin oxide layer and a metal layer which are sequentially stacked and a metal oxide adhesion layer disposed between the indium tin oxide laye...  
WO/2019/156856A1
Methods and devices based on the use of dopant-modulated etching are described. During fabrication, a memory storage element of a memory cell may be non-uniformly doped with a dopant that affects a subsequent etching rate of the memory s...  
WO/2019/153724A1
A preparation method for a fin field-effect transistor (FinFET) device, the method comprising the following steps: S01: preparing a fin structure (2) on a substrate (1), and forming a gate medium and a gate electrode (3) at a middle posi...  
WO/2019/156317A1
The present invention relates to a discharge device for removing most contaminants by spraying nitrogen gas when a wafer having contaminants, such as residual gas, adsorbed on the surface thereof enters therein, and for protecting, when ...  
WO/2019/156363A1
A mask cleaning solution composition according to the present invention comprises a glyme-based compound represented by chemical formula 1 but does not contain a nonpolar solvent. The mask cleaning solution composition according to the p...  
WO/2019/156286A1
The present invention relates to an apparatus for examining the exterior of a semiconductor device. A first vision examiner examines a first surface of each semiconductor device received on a tray being transported from a loading part. A...  
WO/2018/140769A8
A substrate transport empiric arm droop mapping apparatus for a substrate transport system of a processing tool, the mapping apparatus including: a frame, an interface disposed on the frame forming datum features representative of a subs...  
WO/2019/155520A1
As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG disposed on the scribe area, and efficiently arrange an electrode pad for probe contact....  
WO/2019/157384A1
A method of forming doped regions by diffusion in gallium nitride materials includes providing a substrate structure including a gallium nitride layer and forming a mask on the gallium nitride layer. The mask exposes one or more portions...  
WO/2019/156818A1
User expectations demand that keypad layout and size, as well as keypad performance and illumination remain the same or improve over time. In various implementations, the keyboards disclosed and detailed herein incorporate an array of th...  
WO/2019/156637A1
Nanostructured thin films and methods for self-organized nanostructured thin film fabrication is provided. The method includes providing a substrate in a low pressure chamber having a pressure less than atmospheric pressure and depositin...  
WO/2019/156837A1
Apparatus and methods are provided for reducing cross-contamination between deposition operations during the fabrication of heterojunction cells. An apparatus includes the substrate carrier including a plurality of pockets, and the carri...  
WO/2019/155329A1
Provided is a semiconductor device having excellent electrical properties. The semiconductor device is provided with: a first metal oxide layer that has a first region and a second region and third region which sandwich the first region ...  
WO/2019/156407A1
Embodiments of the present invention provide a composition for cleaning away etching residues, comprising: a cleaner which includes an ammonium salt comprising 3 hydroxyalkyl groups; and the balance of water. The composition for cleaning...  
WO/2019/155518A1
With the advancement of miniaturization of semiconductor devices, the scribe areas on wafers have decreased. As a result, the need has arisen to diminish the size of a TEG that is to be disposed in a scribe area, and also to efficiently ...  
WO/2019/155808A1
Provided is a substrate placement platform (15) that makes it possible to ameliorate the effect of external factors such as the temperature in a chamber (11). The substrate placement platform (15), which is placed in the chamber (11) in ...  
WO/2019/156734A1
Various features relate to a test ring including an integrated circuit. The test ring is located around a periphery of the integrated circuit. The test ring includes a first terminal, a second terminal, and a first circuit element, where...  
WO/2019/156055A1
This processing device for electronic components has a main table, a step processing mechanism, a sub-table, and a direction correcting part. The main table has a plurality of holding mechanisms for holding electronic components and conv...  
WO/2019/156752A1
A transistor comprises a pair of source/drain regions having a channel there-between. A transistor gate construction is operatively proximate the channel. The channel comprises Si1-yGey, where "y" is from 0 to 0.6. At least a portion of ...  
WO/2019/153430A1
The present invention provides a TFT substrate and a manufacturing method therefor, and an OLED substrate. According to the manufacturing method for a TFT substrate provided by the present invention, by configuring an interlayer dielectr...  
WO/2019/155777A1
The purpose of the present invention is to provide a laser light source device that uses a high-power laser and has a long life and reduced speckle noise. The present invention is a laser light source device (1) that emits laser light an...  
WO/2019/154980A1
The present invention relates to a method for transferring a printing ink from a donor substrate to a receiving substrate by a laser-induced forward transfer process, wherein the printing ink contains flaky effect pigments, to the use of...  
WO/2019/156400A1
An organometallic compound and a thin film using same of the present invention have high volatility, excellent chemical and thermal stability, and a remarkably improved thin film deposition rate even at low temperatures. In addition, it ...  
WO/2019/155444A1
A semiconductor device is formed having a second III-oxide layer on a first III-oxide layer. The first III-oxide layer having a first phase is formed by feeding a first group III element precursor, a first oxygen precursor, and molecules...  
WO/2019/094391A3
Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN ...  
WO/2019/154462A1
The invention relates to a load lock (1) for a substrate container (201) for receiving flat substrates (301), wherein the load lock (1) has a load chamber (2) for receiving the substrate container (201), which has a floor (3), a ceiling ...  
WO/2019/154826A1
The present invention relates to a method for transferring a printing ink from a donor substrate to a receiving substrate by a laser-induced forward transfer process, wherein the printing ink contains metal oxide containing particles, to...  
WO/2019/156673A1
Techniques and mechanisms for providing functionality of a transistor which comprises a conformal layer of a gate work function silicide. In an embodiment, the transistor comprises a channel region and a gate dielectric which extends and...  
WO/2019/157137A1
According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silic...  
WO/2019/156834A1
A partial unclamping detection system is provided and includes a light emission circuit, a spectrometer, and a system controller. The light emission circuit is configured to emit light at an area of a substrate while the substrate is ele...  
WO/2019/154222A1
A method for manufacturing an ohmic contact of a nitride semiconductor device, comprising: forming on a GaN substrate (1) a metal stack structure (2) containing an Al layer, performing low-temperature oxidation in an oxygen atmosphere to...  
WO/2019/155081A1
The invention relates to a method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprising the following steps: a) the supply of the donor substrate...  
WO/2019/156121A1
One embodiment of the present invention provides a semiconductor wafer 1 which is provided with: a substrate 10 that is mainly composed of Si; a buffer layer 11 that is formed on the substrate 10 and comprises an AlN layer 11a as the low...  
WO/2019/153431A1
The present invention relates to the technical field of semiconductor devices, and provides a preparation method for a hot electron transistor in a high frequency gallium nitride (GaN)/graphene heterojunction. The method comprises: first...  
WO/2019/155970A1
Provided is adhesive tape for semiconductor fabrication constituted by adhesive tape comprising a substrate and an adhesive layer provided on one side of the substrate, the adhesive tape being characterized in that, before energy irradia...  
WO/2019/153725A1
Provided are an image sensor and a method for manufacturing a deep trench and a through-silicon via thereof. The method for manufacturing the deep trench and through-silicon via comprises: providing a pixel silicon wafer; carrying out si...  
WO/2019/155559A1
A static random access memory (SRAM) memory cell (MC1) has first through sixth transistors (PU1, PD1, PU2, PD2, PG1, PG2) which are vertical nanowire (VNW) FETs. The second and fifth transistors (PD1, PG1) are sequentially arranged side ...  
WO/2019/153320A1
An organic light-emitting diode (OLED) display module having a touch control function, an OLED display, and a terminal device. The OLED display module comprises: a plurality of first light-emitting elements (10), a plurality of second li...  
WO/2019/156695A1
Disclosed is a method of manufacturing a semiconductor device that includes molding and curing a framing member having an upper side that defines an array of indentations. Semiconductor dies are then adhered to the framing member within ...  
WO/2019/153134A1
The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultr...  
WO/2019/155504A1
This semiconductor device is provided with: a main groove formed in a principal surface of a substrate; a semiconductor region formed so as to abut on a surface of the main groove; an electron supply region which is formed so as to at le...  

Matches 1 - 50 out of 1,030,605