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WO/2012/014623 |
[Problem] To provide a method of determining the authenticity of an electronic circuit component that is capable of determining whether something is manufactured by a legitimate manufacturer of electronic circuit components. [Solution] W...
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WO/2012/016084 |
A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector.
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WO/2012/013416 |
The invention specifies a module comprising a carrier substrate (6) having an electrical wiring and a component chip mounted on the carrier substrate (6) using flip-chip technology, wherein the component chip (1) has, on its surface (2) ...
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WO/2012/014138 |
A silicon-on-insulator or bonded wafer includes an upper portion having a trapezoid shape in cross-section and a lower portion having an outer peripheral edge having a curved shape.
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WO/2012/015550 |
A method for fabrication of semiconductor device comprising a first wafer comprising first single crystal layer comprising first transistors, first alignment marks, and first transistors interconnect layers comprising at least one metal ...
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WO/2012/014415 |
A spin injection element including: a first ferromagnetic film which contains at least one element selected from among Co, Fe, Ni and B and which has a body-centered cubic structure; a first seed film provided on the first ferromagnetic ...
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WO/2012/016231 |
A system for processing substrates is described. In one embodiment, the system comprises a process chamber and at least one Coanda effect gas injector. The at least one Coanda effect gas injector is disposed proximate a location for the ...
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WO/2012/014952 |
It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatme...
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WO/2012/014675 |
Provided is a semiconductor element in which a reverse leakage current is minimized, and a Schottky barrier between a gate electrode and an epitaxial substrate is adequately strengthened. The semiconductor element is provided with: an ep...
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WO/2012/014786 |
A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide semiconductor layer, and source and drain electrodes in contact with the oxide semiconduc...
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WO/2012/014092 |
An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer ...
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WO/2012/014428 |
Disclosed are a substrate conveyance method and substrate conveyance system that are able to quickly transfer a substrate without losing positional accuracy. Using an electrostatic chuck mechanism in the holding of a substrate (W) by the...
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WO/2012/013162 |
Provided is a manufacturing method for a through-silicon via (TSV) interconnect structure. The method comprises the following steps: providing a semi-conductor substrate (200); forming an indentation (202) on a first surface of the semi-...
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WO/2012/013528 |
The invention relates to a device for storing articles in a controlled atmosphere, comprising: at least one storage module capable of receiving the articles to be stored; a storage module provided with at least one shelf for positioning ...
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WO/2012/014873 |
Disclosed is an electrostatic chuck having a power to suppress residual adhesion that does not easily degrade over time. The electrostatic chuck, which is provided with an insulating substrate (2) and an adhesion electrode (3), is charac...
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WO/2012/015532 |
Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a number of semiconductor layers of a desire...
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WO/2012/015465 |
A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-ma...
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WO/2012/014435 |
[Problem] To provide a compound which has a high solubility in a safe solvent, is highly sensitive, and produces a good resist pattern shape; a radiation-sensitive composition containing the compound; and a method for forming a resist pa...
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WO/2012/014177 |
The invention relates to a method for producing a capacitor including an array of nanocapacitors, in which the following steps are performed using a mould having a sealed surface, referred to as the lower surface, and a top surface throu...
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WO/2012/015755 |
A method for forming an electrical package to reduce warpage. The method includes providing a wafer and coupling a die thereto. A mold compound material is applied to the wafer such that the mold compound material surrounds the die. The ...
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WO/2012/013707 |
The invention relates to a vacuum processing system for processing a substrate (2), with an enclosure (1) for carrying the substrate (2) to be treated in a substrate plane (4), whereby the enclosure (1) comprises a first reflecting means...
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WO/2012/015578 |
Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas...
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WO/2012/014711 |
Disclosed is a laser processing method in which laser light (L) is focused inside a target object (1) formed from silicon, thereby forming a modified region (7), and etching is performed along the modified region (7), thereby forming a t...
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WO/2012/014495 |
[Problem] To resolve the problem that employing high-contrast photoresist that is typically used when producing a reflective mask causes accumulated energy and CD linearity to deteriorate owing to backscatter. [Solution] A reflective mas...
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WO/2012/015022 |
[Problem] Provided are: a composite substrate which comprises a silicon substrate having excellent crystallinity; a method for producing a composite substrate; and a method for manufacturing a semiconductor element. [Solution] A composit...
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WO/2012/015699 |
A method of configuring a polishing monitoring system includes receiving user input selecting a plurality of libraries, each library of the plurality of libraries comprising a plurality of reference spectra for use in matching to measure...
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WO/2012/014358 |
Proposed is a fault inspection method whereby: illuminating light having a substantially uniform illumination intensity distribution in one direction of a sample surface is irradiated on the sample surface; multiple scattered light compo...
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WO/2012/014724 |
Disclosed is a substrate processing method for forming a void along a prescribed line (12) in a silicon substrate (11). Said method includes: a first step in which elliptically polarized laser light (L), which has an ellipticity other th...
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WO/2012/014869 |
The present invention is an imprint device and a transfer method therefor, whereby recess and projection shapes present on the surface of a stamper are transferred to transfer-receiving object by irradiating the transfer-receiving object...
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WO/2012/015819 |
One embodiment relates to an oblique illuminator. The oblique illuminator includes a light source (402, or 412, or 502, or 802) emitting a light beam, a first reflective surface (404, or 414, or 504, or 804), and a second reflective surf...
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WO/2012/014722 |
Disclosed is a substrate processing method for forming a void along a prescribed line (12) in a silicon substrate (11). Said method includes: a first step in which elliptically polarized laser light (L), which has an ellipticity other th...
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WO/2012/014775 |
The present invention addresses the problem of providing a method for manufacturing a semiconductor device which suppresses oxide film growth at a semiconductor crystal substrate interface and has a high-quality high dielectric constant ...
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WO/2012/014576 |
[Problem] The purpose is to provide a negative radiation-sensitive resin composition which is reduced in bumps in the side wall of a resist pattern or deterioration of the pattern shape due to reflection from a substrate when applied to ...
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WO/2012/014883 |
Provided is an epitaxial substrate for a semiconductor element in which the diffusion of elements from a cap layer is suitably minimized, and which has excellent characteristics. The epitaxial substrate for a semiconductor element, in wh...
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WO/2012/014736 |
The present invention provides a technique whereby changes in absorbed current obtained from a defect location present in a wiring segment to be tested is emphasized relative to those for other wiring segments. The following scheme is ad...
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WO/2012/014314 |
A drive device is provided with a first connection unit, a second connection unit, a switching element, and a control unit. The first connection unit is configured to connect to a gate resistor section of a voltage-driven element. The se...
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WO/2012/014331 |
A contact sheet (20) comprises: a contact ball (24) that has a core member (25) which is configured of a resin material, and a coating layer (26) which is configured of a metal material and covers the surface of the core member (25); and...
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WO/2012/014709 |
Disclosed is a laser processing method for forming a hole (24) in a flat target object (1) formed from silicon. Said method includes: a recess-formation step in which a recess (10), which opens to a laser-light incidence surface (3) of t...
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WO/2012/014487 |
The purpose of the present invention is to provide a laminate film which has excellent heat resistance and stress relaxing properties and is suitable as a component member for a film that is used for the production of a semiconductor. Th...
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WO/2012/014497 |
In the present disclosures, a mixed gas containing monosilane is discharged from a semiconductor production device (1). A pump unit (2) sucks the mixed gas discharged from the semiconductor production device (1), and sends the mixed gas ...
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WO/2012/015694 |
A method of polishing includes polishing a substrate having a second layer overlying a first layer, measuring a sequence of groups of spectra of light from the substrate while the substrate is being polished, each group of the groups of ...
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WO/2012/013036 |
A semiconductor device and a method for forming the same are provided. The device comprises: a semiconductor substrate (1000); a stress layer (1008) embedded in the semiconductor substrate; a channel region situated above the stress laye...
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WO/2012/014999 |
Provided is an oxide for a semiconductor layer of a thin film transistor, which can impose excellent switching properties to the thin film transistor and can achieve good properties steadily even after the formation of a protective film....
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WO/2012/014357 |
Provided is a method for inspecting the surface of a sample for defects, which comprises: prescan defect inspection steps including a pre-scan irradiation step for irradiating the surface of a sample with light, a prescan detection step ...
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WO/2012/015656 |
Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to ...
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WO/2012/015877 |
In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral g...
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WO/2012/014628 |
Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer ...
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WO/2012/014885 |
Provided is a precursor composition for forming an amorphous metal oxide semiconductor layer, which contains a metal salt, a first amide, and a solvent that contains water as a main component. An amorphous metal oxide semiconductor layer...
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WO/2012/013035 |
A manufacturing method for a semiconductor device is provided. The method includes: providing a semiconductor substrate (301) on which a high-k dielectric layer (305) and a patterned gate are formed in sequence; nitriding the portion of ...
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WO/2012/014645 |
The disclosed silicon carbide substrate (1) comprises silicon carbide, and the angle between the orthographic projections of the normal of one principal surface (1A) and the normal of the {03-38} plane, to a plane containing the <01-10> ...
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