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WO/2012/015550 |
A method for fabrication of semiconductor device comprising a first wafer comprising first single crystal layer comprising first transistors, first alignment marks, and first transistors interconnect layers comprising at least one metal ...
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WO/2012/014415 |
A spin injection element including: a first ferromagnetic film which contains at least one element selected from among Co, Fe, Ni and B and which has a body-centered cubic structure; a first seed film provided on the first ferromagnetic ...
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WO/2012/014952 |
It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatme...
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WO/2012/014675 |
Provided is a semiconductor element in which a reverse leakage current is minimized, and a Schottky barrier between a gate electrode and an epitaxial substrate is adequately strengthened. The semiconductor element is provided with: an ep...
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WO/2012/014786 |
A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide semiconductor layer, and source and drain electrodes in contact with the oxide semiconduc...
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WO/2012/015532 |
Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a number of semiconductor layers of a desire...
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WO/2012/013943 |
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes e...
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WO/2012/014775 |
The present invention addresses the problem of providing a method for manufacturing a semiconductor device which suppresses oxide film growth at a semiconductor crystal substrate interface and has a high-quality high dielectric constant ...
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WO/2012/014883 |
Provided is an epitaxial substrate for a semiconductor element in which the diffusion of elements from a cap layer is suitably minimized, and which has excellent characteristics. The epitaxial substrate for a semiconductor element, in wh...
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WO/2012/014792 |
[Problem] To provide a physical quantity sensor that is superior both in terms of hermetic qualities and electrical stability. [Solution] Formed on the back surface (8a) of the frame body portion (8) of a sensor substrate (26) are a firs...
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WO/2012/013036 |
A semiconductor device and a method for forming the same are provided. The device comprises: a semiconductor substrate (1000); a stress layer (1008) embedded in the semiconductor substrate; a channel region situated above the stress laye...
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WO/2012/014999 |
Provided is an oxide for a semiconductor layer of a thin film transistor, which can impose excellent switching properties to the thin film transistor and can achieve good properties steadily even after the formation of a protective film....
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WO/2012/014628 |
Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer ...
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WO/2012/014885 |
Provided is a precursor composition for forming an amorphous metal oxide semiconductor layer, which contains a metal salt, a first amide, and a solvent that contains water as a main component. An amorphous metal oxide semiconductor layer...
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WO/2012/014645 |
The disclosed silicon carbide substrate (1) comprises silicon carbide, and the angle between the orthographic projections of the normal of one principal surface (1A) and the normal of the {03-38} plane, to a plane containing the <01-10> ...
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WO/2012/014642 |
The purpose of the present invention is to provide a higher-k gate stack which contains a HfO2 layer as a gate insulating film, does not undergo the formation of an SiO2 layer at the interface, and has an extremely small equivalent oxide...
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WO/2012/013037 |
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate (1), a semiconductor fin (2) above the semiconductor substrate (1), and an etch stop layer (11) bet...
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WO/2012/014790 |
A semiconductor device includes a material with which off-state current of a transistor can be sufficiently small; for example, an oxide semiconductor material is used. Further, transistors of memory cells of the semiconductor device, wh...
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WO/2012/014617 |
An MOSFET (100) comprises a silicon carbide substrate (1) which has the main surface (1A) having an off angle against face [0001] of 50° to 65° inclusive, a buffer layer (2) and a drift layer (3) both of which are formed on the main su...
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WO/2012/014352 |
A first semiconductor layer (103) includes a low-carbon-concentration region having a carbon concentration of less than 1×1017 cm-3 at least in a region under an end portion of a gate electrode (106) on the side of a drain electrode (10...
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WO/2012/012921 |
A MOSFET structure and manufacturing method thereof are provided. The MOSFET structure includes: a semiconductor substrate, a gate stack which is set on the semiconductor substrate and includes a high-k gate dielectric layer and a gate c...
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WO/2012/014668 |
A process for producing a solar cell of the present invention comprises a step of bringing a semiconductor into contact with a nitric acid vapor produced from nitric acid having a concentration of 60 to 99.9 wt% inclusive and a temperatu...
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WO/2012/012922 |
A semiconductor device structure and a manufacturing method thereof are provided. The method includes: forming gate lines (3005) on a semiconductor substrate (3000); forming gate sidewalls (3006) around the gate lines; forming source/dra...
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WO/2012/013009 |
A semiconductor device structure and a manufacturing method thereof are provided. The method includes：providing a semiconductor substrate (1000); forming a first insulating layer (1003) on the surface of said semiconductor substrate (1...
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WO/2012/015393 |
Transistor with counter-electrode connection amalgamated with the source/drain contact The field effect device (7) comprises an active area (5) made from semi-conducting material (4) and a gate electrode (8) separated from the active are...
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WO/2012/013888 |
The invention relates to a structure comprising an n-type substrate (1) having a bottom surface (10) and a top surface (11), a drain (D) contacting the bottom surface (10) of the substrate (1), a first n-type semiconductor region (2) hav...
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WO/2012/014992 |
Disclosed is a non-volatile semiconductor device comprising: a tunnel insulating film (12) on top of a semiconductor substrate; a charge storage film (13) on top of the tunnel insulating film; a blocking insulating film (14) on top of th...
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WO/2012/014943 |
The present invention provides a condensed ring compound which has excellent electron-transporting properties, has excellent solubility in solvents, and can be used as an organic n-type semiconductor. This condensed ring compound is repr...
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WO/2012/009928 |
A laterally diffused metal oxide semiconductor (LDMOS) device with a multi-layer super-junction structure is provided. The active region of the device includes: a gate region, a source region (11) and a drain region (16) located on both ...
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WO/2012/012157 |
A Schottky barrier diode comprises a first-type substrate (100), a second-type well isolation region (102) on the first-type substrate, and a first-type well region (110) on the second-type well isolation region. With embodiments herein ...
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WO/2012/011225 |
Provided is a semiconductor device which is capable of reducing leakage current even in cases where the transistor area is decreased. A semiconductor device (1) of the present invention comprises: a p-type semiconductor substrate (10); a...
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WO/2012/011539 |
The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a ...
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WO/2012/011258 |
A thin film transistor substrate (20a) comprises an insulating substrate (10a), multiple source terminals (15) which are arranged on the insulating substrate (10a), and a first terminal cover (24) which is so adapted as to cover a part o...
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WO/2012/011536 |
Provided is a semiconductor device planar layout wherein a forming region (1) of a free-wheeling diode is disposed in a chip center portion where the temperature easily increases, and a forming region (2) of an insulating gate-type bipol...
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WO/2012/011900 |
A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region ...
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WO/2012/012569 |
A multiple sensor-types integrated circuit device includes a semiconductor die including a first sensor type and a second sensor type formed thereon, an electrically insulating package enclosing the semiconductor die and a plurality of e...
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WO/2012/012031 |
Electronic device structures that compensate for non-uniform etching on a semiconductor wafer and methods of fabricating the same are disclosed. In one embodiment, the electronic device includes a number of layers including a semiconduct...
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WO/2012/010473 |
Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanow...
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WO/2012/010816 |
The invention relates to a method of fabricating a semiconductor device, the method comprising the steps of: providing a stacked semiconductor structure comprising a substrate (1), a buffer layer (2) and one or more device layers (3); de...
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WO/2012/008203 |
Conventional electrode forming methods such as photolithography or mask sputtering had problems difficult to solve, such as simplification of the process, efficiency in the use of materials, cost, and being adaptable to various substrate...
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WO/2012/006805 |
A silicon-on-insulator metal oxide semiconductor (SOI MOS) component with body-tied-to-source (BTS) structure and a fabricating method thereof are provided. The source region of the SOI MOS component has two heavily doped N-type regions ...
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WO/2012/008027 |
An electrode (109) is so arranged as to be insulated from a compound semiconductor layer (102) and be in contact with an electrode (101) and a compound semiconductor layer (103). The compound semiconductor layer (103) has a lower lattice...
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WO/2012/008192 |
The present invention provides: a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to the step of forming a semiconductor layer or a source layer; a display device; and ...
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WO/2012/008075 |
Disclosed is a nitride semiconductor device which is provided with a nitride semiconductor layer laminated body (102) having an active region (102A), and finger-like first electrode (131) and second electrode (132), which are formed at a...
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WO/2012/008555 |
Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally a...
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WO/2012/008552 |
A process of silicon (Si) surface modification is provided for the electrochemical synthesis of Si particles in suspension. The process begins with a Si first substrate with a surface, and forms Si particles attached to the surface. Hydr...
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WO/2012/006890 |
A MOS transistor (60, 62) is provided. The structure of the transistor (60, 62) includes: a semiconductor substrate (10), a channel area (20, 24), source/drain regions (22, 26), a gate (30, 32), a gate insulating layer (11), a shallow tr...
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WO/2012/008554 |
The present invention provides a precursor composition for forming a conductive oxide film which has high electrical conductivity and in which an amorphous structure can be maintained steadily even when the film is heated to a high tempe...
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WO/2012/006859 |
A Si-Ge-Si semiconductor structure with two graded junctions is provided, which comprises: a substrate; a transition layer or an insulation layer formed on the substrate; a strain SiGe layer formed on the transition layer or the insulati...
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WO/2012/008067 |
Disclosed is a semiconductor storage device (100) which has: a plurality of bit line diffusion layers (108) which are formed to extend in parallel to each other in the upper portion of a P-type semiconductor substrate (101); and a plural...
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