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WO/2024/078043A1 |
A display panel, which comprises: a substrate, a multi-layer ohmic contact layer, a multi-layer insulating layer, a semiconductor layer, a gate electrode and a source/drain electrode layer; at least one insulating layer is arranged betwe...
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WO/2024/081401A1 |
A method of forming a semiconductor structure includes forming an epitaxial semiconductor island having a first material characteristic on a base layer, and growing an epitaxial structure from the epitaxial semiconductor island and the b...
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WO/2024/078335A1 |
Disclosed are a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate; forming a protective layer in a first region of the substrate...
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WO/2024/079585A1 |
Provided is a storage device which allows for miniaturization and high integration. This transistor comprises: a first electric conductor having a columnar region; a first insulator having a cylindrical first region; a second electric co...
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WO/2024/079575A1 |
Provided is a semiconductor device having a novel configuration. This semiconductor device has: a first element layer having a bit line drive circuit; a second element layer having a first switch circuit, a first memory cell, and first w...
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WO/2024/078073A1 |
Disclosed in the present disclosure are a semiconductor device, and a manufacturing method therefor. The semiconductor device comprises: a substrate, a buffer layer, a channel layer and a barrier layer which are stacked successively; a c...
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WO/2024/078125A1 |
A composite trench-type Schottky diode device and a fabrication method therefor. The device comprises a substrate (201), an epitaxial layer (202), a trench structure array (203), a Schottky metal layer (204), a front metal electrode laye...
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WO/2024/079851A1 |
A semiconductor memory device according to an embodiment of the present invention includes: a first chip including a first pillar having a first memory cell and a second memory cell connected in series; a second chip including a second p...
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WO/2024/081947A1 |
Nanowire-based sensors may include an array of nanowires attached to a substrate. The nanowires may have a cladding and are configured to selectively direct incident light into the substrate to interact with surface plasmons at a metal l...
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WO/2024/078637A1 |
Provided in the present invention are a high-voltage-resistance and low-on-resistance IGZO thin-film transistor and a preparation method therefor. Hydrogen ion doping is performed on an IGZO low-resistance drift region of a device, such ...
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WO/2024/078949A1 |
A silicon-based quantum processor is disclosed comprising a plurality of unit cells having respective qudits that can interact with one another, directly or indirectly. Each unit cell comprises a charge reservoir (101) and a plurality of...
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WO/2024/079586A1 |
The present invention provides a semiconductor device which achieves miniaturization or high integration. This semiconductor device comprises a first insulator on a substrate, an oxide semiconductor that covers the first insulator, a fir...
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WO/2024/078688A1 |
The present disclosure relates to a manufacturing method for a power semiconductor device (1, 40), comprising: forming multiple growth templates on a carrier substrate (2), comprising at least a first plurality of hollow growth templates...
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WO/2024/080002A1 |
A semiconductor device (100) comprises a semiconductor substrate (10), an emitter electrode (52), and a polyimide protection film (150). The semiconductor substrate has: an active part (120) that has alternating transistor parts (70) and...
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WO/2024/076890A1 |
Semiconductor devices are provided. In one example, a semiconductor device includes a semiconductor structure having a buried layer at a depth of about 275 Angstroms or greater (e.g., about 500 Angstroms or greater) from a surface of the...
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WO/2024/075432A1 |
Provided is a method for producing a vertical silicon carbide semiconductor device that comprises electrodes on both main surfaces of a semiconductor chip (30) in which an epitaxial layer (2) and a n- type low-concentration buffer layer ...
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WO/2024/076471A1 |
A drive system suitable for motors and the like employs bidirectional FETs with active gate current sourcing and sinking to eliminate series diode losses. In one embodiment, the bidirectional FETs have floating field plates that can be d...
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WO/2024/073818A1 |
There is provided a method for performing one or more quantum operations on a quantum processor. Wherein the quantum processor comprises a plurality of quantum dots in a semiconductor substrate and at least a subset of the quantum dots b...
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WO/2024/074954A1 |
Provided is a semiconductor device having a narrow occupation area. This semiconductor device comprises a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor comprises a me...
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WO/2024/074936A1 |
Provided is a novel semiconductor device. This semiconductor device has a flip-flop group that includes n flip-flops, and a plurality of storage units. The flip-flop group has a function for saving n bits of data. One of the plurality of...
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WO/2023/245604A9 |
The present disclosure belongs to the technical field of display, and provides a thin-film transistor and a preparation method therefor, and a display device. The thin-film transistor comprises a gate electrode and a first active layer w...
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WO/2024/074968A1 |
Provided is a novel semiconductor device. The present invention comprises a flip-flop circuit and a memory circuit. The memory circuit comprises a first transistor, a second transistor, a first capacitance element, and a second capacitan...
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WO/2024/074967A1 |
Provided is a semiconductor device having a high storage density. This semiconductor device has a first layer and a second layer above the first layer. The first layer has first to fourth conductors, first to fifth insulators, and a firs...
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WO/2024/074073A1 |
A memory device includes a substrate and vertically stacked ferroelectric capacitors formed on the substrate. A first ferroelectric capacitor has a different capacitive output than a second ferroelectric capacitor when a constant voltage...
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WO/2024/075923A1 |
A thin film transistor, a transistor array substrate comprising same, and a method for manufacturing the transistor array substrate, are provided. The thin film transistor comprises: a substrate; an active layer disposed on the substrate...
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WO/2024/075391A1 |
This nitride semiconductor device (10) comprises: a hexagonal SiC substrate (22) having a main surface (22A) inclined at an off angle of 2-6° in a specific crystal direction with respect to the c-plane; a nitride semiconductor layer (24...
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WO/2024/074969A1 |
Provided is a storage device which can be miniaturized and made highly integrated. This storage device has a configuration having a capacitive element formed directly below a vertical transistor, wherein one electrode of the capacitive e...
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WO/2024/072806A1 |
A fabrication method of a semiconductor device is described. Generally, the method includes forming a customizable oxide-nitride-oxide (ONO) stack over a substrate in an in-situ atomic layer deposition (ALD) tool or chamber. Radical oxid...
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WO/2024/065148A1 |
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, an etch resistant layer, and a gate electrode. The second nitr...
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WO/2024/069340A1 |
The present invention provides a semiconductor device which comprises a transistor of a very small size. This semiconductor device comprises first and second transistors; the first transistor comprises first to third conductive layers, a...
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WO/2024/070915A1 |
The purpose of one aspect of the present invention is to provide a resin that has liquid repellency and high solubility in alkaline solution, the resin being rendered insoluble in solvents through photocrosslinking at a low exposure leve...
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WO/2024/067997A1 |
In one embodiment, the semiconductor device (1) comprises a semiconductor body (2), a gate electrode (33) and a first electrode (31), wherein - the semiconductor body (2) comprises a first region (21) which is a source region or an emitt...
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WO/2024/066369A1 |
A vertical-transport field-effect transistor (VTFET) is on a wafer. The VTFET has a first width. The first width is a contacted poly pitch (CPP). A bottom source/drain region of the VTFET extends at least the first width from the VTFET. ...
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WO/2024/065110A1 |
The present application relates to the technical field of display, and discloses a thin film transistor and a preparation method, and a display panel. Since the concentration of hydrogen in a semiconductor layer of the thin film transist...
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WO/2024/068453A1 |
Embodiments of the present invention are directed to monolithic stacked field effect transistor (SFET) processing methods and resulting structures having dual middle dielectric isolation (MDI) separation. In a non-limiting embodiment of ...
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WO/2024/070392A1 |
The present invention provides a semiconductor device that comprises: an insulating first film which is formed along the side wall of an element isolation trench, and which has a first portion that is formed along the bottom wall and the...
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WO/2024/073358A1 |
Embodiments of the present disclosure provide devices, apparatuses, and methods related to FETs with reduced leakage. In some embodiments, devices on a silicon-on-insulator substrate may include a silicon layer; a gate structure at least...
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WO/2024/070021A1 |
Provided is a semiconductor device that, with respect to a trench MOSFET having a vertical channel fin structure, is capable of improving the short circuit tolerance and reducing the gate capacity while maintaining a high channel density...
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WO/2024/073632A1 |
A microelectronic device (100) includes a buried trench capacitor (170) below an electronic component (174) of the microelectronic device (100). In one embodiment, the buried trench capacitor (170) may be formed between a silicon oxide c...
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WO/2024/066567A1 |
Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor, and an electronic device, for use in further improving the electron mobili...
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WO/2024/065149A1 |
A nitride-based semiconductor device (1A) includes a first III-V nitride-based semiconductor layer, a second III-V nitride-based semiconductor layer, a gate dielectric layer (16), and a gate electrode (40). The second III-V nitride-based...
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WO/2024/067197A1 |
A semiconductor device includes a substrate having a first region and a second region separated from the first region by distance to define a space therebetween. A first semiconductor device including a gate dielectric is on the first re...
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WO/2024/066745A1 |
A HEMT device, comprising a semiconductor layer, at least one gate structure, a first insulating layer (210), a dotted drain contact through hole (211), an annular source contact through hole (212), a drain ohmic contact metal layer (215...
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WO/2024/067998A1 |
In one embodiment, the semiconductor device (1) comprises a semiconductor body (2), a gate electrode (33) and a first electrode (31), wherein - the semiconductor body (2) comprises a first region (21) which is a source region or an emitt...
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WO/2024/070344A1 |
The present invention improves electrical characteristics. A capacitor (1) comprises a silicon substrate (2), a dielectric layer (4), and a conductor layer (5). The silicon substrate (2) has a doped layer (3). The doped layer (3) include...
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WO/2024/065310A1 |
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, and at least one electrode structure. The second nitride-based semiconductor layer is disposed on the fi...
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WO/2024/069733A1 |
According to the present invention, a method for manufacturing a magnetized rotary element has a measurement step, a comparison step, and a determination step. In the measurement step, a laminate comprising a first detection layer and a ...
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WO/2024/069339A1 |
This storage device has: a first insulator on a substrate; an oxide semiconductor which covers at least a portion of the first insulator; first and second conductors on the oxide semiconductor; a second insulator on the first conductor; ...
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WO/2024/065176A1 |
An array substrate, a display panel, and a method for manufacturing an array substrate. The array substrate comprises: a base substrate (1); a first active layer (2) on the base substrate (1); a second active layer (3) on the side of the...
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WO/2024/070164A1 |
A semiconductor device comprising: a chip having a main surface and made of a semiconductor of a first conduction type; a first region of a second conduction type selectivity formed in a main-surface-side surface-layer portion of the chi...
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