| Document |
Document Title |
|
JP11343200 |
To easily prepore a thin film having excellent electric characteristics by directly forming a PZT crystal thin film by reactive sputtering on a substrate and growing crystals of a PZT crystal thin film by a hydrothermal synthesizing meth...
|
|
JP11337406 |
To obtain an infrared sensor which can be manufactured simply, in which the influence of a disturbance noise is small, in which a high-impedance system can be stabilized and whose malfunction is small. An infrared sensor 10 contains a st...
|
|
JP11330583 |
To suppress the static electricity and oxidation caused by water for processing substrates in manufacturing electronic components. The method has a step of processing a substrate having metal film conductors with water in which 3.5≤pHâ...
|
|
JP11330573 |
To provide a bump forming method in which troubles such as damage of an electrode caused by discharge due to rapid temperature change, suction of wafer to a part on a heater, and break of a wafer caused by more rapid temperature change a...
|
|
JP11281475 |
To eliminate reduction in resolution in a distant point of a scanning monitoring area, and to reduce a noise quantity of respective pyroelectric elements by forming the arranging directional length of distant point side pyroelectric elem...
|
|
JP11284247 |
To invalidate pyroelectric effect even if a piezoelectric ceramics are not of the same performance. When piezoelectric ceramics 2 and 3 are bonded to a metal vibration plate 1 with a bond 6, electrodes 4 and 5 of piezoelectric ceramics a...
|
|
JP11281476 |
To lengthen the service life, to facilitate maintenance/inspection, and to improve monitoring accuracy by constituting a pyroelectric element of a light receiving electrode plate for monitoring a two-dimensional scanning monitoring area ...
|
|
JP11271142 |
To obtain a ferroelectric thin film which is appropriate for an infrared detection element showing high detection sensitivity in the neighborhood of room temperatures, by irradiating and excimer laser light to a target including Sr, Ba, ...
|
|
JP2978653 |
PURPOSE: To provide a semiconductor thin film thermistor making good contact with metallic electrodes capable of maintaining the high rate of resistance change in an amorphous alloy semiconductor thin film. CONSTITUTION: This semiconduct...
|
|
JP11242048 |
To reduce a cut-off frequency and to expand a sensitivity range by reducing sensitivity, making a circuit unstable, and eliminating the need for using a high-resistance feedback resistor. A feedback capacitor 4 is connected between the o...
|
|
JP11233723 |
To enable a device to sufficiently exhibit the property of a functional oxide film or a dielectric film. The manufacture of a dielectric capacitor is as follows: a Ta-O-N film 4, 5-10 nm in thickness is made by performing ozone annealing...
|
|
JP11230826 |
To provide a pyroelectric element from which the occurrence of such a trouble as the shifting of electrodes on the front and rear surfaces of the element, the turning over of the electrodes during a vapor depositing process, etc., can be...
|
|
JP11233733 |
To provide an electronic parts having a dielectric material film which assures excellent fatigue characteristic and electric, characteristic and less amount of recess and projection at the surface. In a method of manufacturing a ferro-di...
|
|
JP2969031 |
PURPOSE: To provide a semiconductor device, wherein a first thin film of prescribe pattern is formed covering the cavity of a substrate and whose periphery is supported by the substrate, and the first thin film on which a semiconductor t...
|
|
JP11205898 |
To improve the crystallinity of a main conduction layer by providing the main conduction layer for inputting/outputting an electric signal to/from a dielectric thin film, an adhesion layer for making a substrate closely adhere to the mai...
|
|
JP11201775 |
To grasp each phenomenon by providing a phenomenon detection part to detect the physical phenomenon and/or chemical phenomenon to fetch the electric signal of a plurality of physical phenomena and/or chemical phenomena on one side of a s...
|
|
JP11183223 |
To obtain a long-life sensor having a heating type thin film element. The sensor comprises an Si substrate 101 having a hollow 102 and heating type thin film element 104 supported on the substrate 101 surrounding the hollow 102 with its ...
|
|
JP11167814 |
To provide a multilayer ferroelectric thin film having an optically smooth and transparent surface, and applicable to electro-optic elements, etc., using a light waveguide. This multilayer ferroelectric thin film is composed of a substra...
|
|
JP11168246 |
To reduce a drive voltage, increase amount of displacement, improve stability, and perform miniaturization by providing a displacement enlargement part that is on the same plane as a drive part, is connected to the drive part so that it ...
|
|
JP11132815 |
To obtain a sensor having a long-life exothermic thin film element. The sensor comprises an Si substrate 10 having a hollow 102 and exothermic thin film element 104 supported on the surface of the Si substrate 101 surrounding the hollow ...
|
|
JP11106279 |
To provide a method for readily and rapidly forming a thin membrane having regulated crystal orientation on a substrate by forming an amorphous precursor membrane on the substrate, heating and firing the obtained amorphous precursor memb...
|
|
JP11087792 |
To easily control piezoelectric characteristics and control linearity of piezoelectric ceramics, by providing at least a piezoelectric ceramic region and an electro-strictive ceramic region. An internal structure of a piezoelectric ceram...
|
|
JP11074545 |
To improve a contact strength of a transition metal oxide layer with a protective film interface, by inserting the step of forming a first protective film such as a silicon oxide film or the like between the step of forming the metal oxi...
|
|
JP11068119 |
To provide a production method by which the adhesion of micro-bridge structure to a base after drying can be prevented and the micro-bridge structure adhered thereto can be recovered in the case where the surface of substrate made of sil...
|
|
JP11031850 |
To provide a method for manufacturing a semiconductor device which has superior homogeneity of pattern in a specified region comprising a required pattern, and also to provide a semiconductor device wherein the size of a circuit and its ...
|
|
JP11026296 |
To form a conductive thin film exhibiting a high surface flatness, which can control stress of a ferroelectric thin film, especially a PZT thin film exhibiting a high surface flatness and an enough selfpolarization which is to be formed ...
|
|
JP11017126 |
To deposit an orientation-grown or epitaxially grown multilayered thin film of ferroelectric oxide with a high reliability by a method wherein a multilayered oxide film has a lattice parameter in the prescribed extent of a metallized lay...
|
|
JP11004023 |
To decrease the resistance of a leg part and to suppress the voltage drop on the leg part while heat conductance, which is same as the case where titanium is used, is being maintained using titanium silicide as the wiring material of the...
|
|
JP10332480 |
To obtain a high sensitivity solid state infrared image sensor by arranging a plurality of wires in at least a single supporting leg. A plurality of metal wires 31, 32 for supplying a current to a bolometer thin film 11 are arranged in o...
|
|
JP10335681 |
To improve the resistance temperature coefficient of a bolometer titanium, by forming an insulating protection film at a specific growing temperature on a titanium thin film which is a bolometer material. A silicon oxide film 7 is grown ...
|
|
JP10330198 |
To obtain a PZT-based piezoelectric crystal film good in surface smoothness and excellent in electrical properties, by forming the aimed crystal film on a substrate through hydrothermal process so as to design the surface roughness (Rmax...
|
|
JP10330195 |
To obtain a PZT-based piezoelectric crystal film improved in surface roughness so as to facilitate electrode impartment, also improved in dielectric loss, by forming an initial crystal layer consisting of a multiple oxide containing lead...
|
|
JP10330196 |
To obtain a PZT-based piezoelectric crystal film improved in surface roughness so as to facilitate electrode attachment, also improved in dielectric loss, by specifying the thickness of an initial crystal layer in forming the aimed cryst...
|
|
JP10321922 |
To obtain stable pyroelectric performance without requiring processes such as extension, polarization, etc., by a method wherein an active component increasing an amount of dipole moment in a basic material is arranging in the basic mate...
|
|
JP10318831 |
To provide a pyroelectric infrared sensor which is suited to downsizing without shielding plate and driving motor for chopper, and is excellent in workability and productivity because of integrated production. This infrared sensor is pro...
|
|
JP10318864 |
To provide a method for manufacturing a diaphragm type element wherein an improvement of yield is expected. After a diaphragm formation region pattern 11 and a band-like substrate cut pattern 12 are formed on a rear surface of a silicon ...
|
|
JP10313097 |
To enable a ferroelectric thin film to be controlled in orientation by a method wherein an polycrystalline thin film of bismuth oxide as a buffer layer and a specific bismuth compound thin layered film are formed in a single phase. A cap...
|
|
JP10300569 |
To obtain a pyroelectric infrared detector whose constitution is simple and which can restrain heat from being diffused to a board from a pyroelectric element as far as possible, by a method wherein a part of the pyroelectric element is ...
|
|
JP10291885 |
To produce a thin oxide ceramic film free from oxygen deficiency and having a compsn. close to the theoretical stoichiometric ratio by forming an amorphous precursor film on a substrate, exposing it to an atmosphere of ozone and carrying...
|
|
JP10291888 |
To obtain a complete high-quality thin film by applying a sol prepared from an org. metal compd. as the source material on a substrate, drying the coating film to form an amorphous precursor film, and crystallizing the film in such a man...
|
|
JP10291887 |
To easily and rapidly form a film with controlled crystalline orientation by forming an amorphous precursor film on a substrate and calcining the film to crystallize in such a manner that the temp. on the face of the amorphous precursor ...
|
|
JP10274561 |
To provide a detecting element high in manufacturing yield and productivity, small in thermal time constant and reduced in afterimage by forming thermally separated structure with an upper layer part and a lower layer part spatially sepa...
|
|
JP10259024 |
To obtain a thin film of vanadium oxide having a large TCR near room temperature close to that of bulk VO2 and applicable to bolometer-type infrared ray sensors operable at room temperature, without using any heat treatment and without r...
|
|
JP10245298 |
To obtain a crystal orientated ceramic substrate capable of forming a functional thin film of large area high in degree of orientation, comprising an isotropic perovskite type compound polycrystal or a layer perovskite type compound poly...
|
|
JP10239151 |
To provide an infrared detector that is reduced in size further while being made to have no malfunction due to noise. At least a current/voltage conversion means 20 and a human body detection signal output means 50 are formed on the same...
|
|
JP2820009 |
PURPOSE: To provide a method for producing a ferroelectric thin film whose surface is optically smooth and transparent, moreover, which is epitaxial or high in orientation property on an MgO or MgAl2O4 single crystal substrate by using a...
|
|
JP10227691 |
To obtain a pyroelectric thin-film infrared detector which can be miniaturized by a method wherein a pyroelectric-substance-film element is formed on the surface of a substrate, a pyroelectric-substance-film connecting electrode is forme...
|
|
JP10227689 |
To provide an infrared detector having uniform output characteristics and an infrared focal plane array having satisfactory uniformity of image quality by integrating it with the detector. A bolometer type infrared detector for detecting...
|
|
JP10223476 |
To prevent the decline of the spontaneous polarization value of a ferroelectric thin film, particularly, a PbTiO3 ferroelectric thin film, when the thin film is formed on a single-crystal Si substrate by controlling stresses in the thin ...
|
|
JP10221128 |
To achieve a higher level of integration by providing a removal resulting area with a resistance to the removal of substrates on a silicon substrate between a semiconductor circuit and a hollow part to allow the removal of substrates fro...
|
