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JP4978501B2 |
A first thermosensitive element including a temperature detecting unit that outputs a voltage corresponding to a temperature to which the unit rises from ambient temperature (temperature of surrounding environment) due to incident infrar...
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JP2012134415A |
To provide a detector, sensor device and electronic apparatus, capable of increasing detection sensitivity.The detector includes: a detection node ND, first to (n)th pyroelectric elements PY1 to PYn (n: an integer of two or more), and a ...
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JP2012127881A |
To provide an infrared sensor which prevents an infrared absorption film from being electrically charged and has high infrared detection sensitivity and to provide an infrared sensor array.An infrared sensor 100 for detecting infrared ra...
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JP4967438B2 |
To provide a semiconductor device which eliminates the need for enlarging a space in which a functional device is formed in order to provide a getter which absorbs impurity gas, and to provide its manufacturing method. An infrared sensor...
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JP2012122041A |
To provide a porous resin sheet for a piezoelectric-pyroelectric element hardly lowering piezoelectric performance even under a high-temperature high-humidity environment, and to provide a method for producing the porous resin sheet.In t...
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JP4962837B2 |
An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry...
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JP4944590B2 |
To provide a thermal type infrared sensing device capable of achieving compactness and low costs and provide its manufacturing method. The thermal type infrared sensing device includes both a thermal type infrared sensing element 1 which...
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JPWO2010073288A1 |
Provided are an infrared sensor and a method for manufacturing an infrared sensor, which can improve the detection sensitivity and can be manufactured easily and with good yield. A frame-shaped substrate portion 2 formed in a four-circum...
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JP4934986B2 |
To provide an emitter material for thermophotoelectromotive force power generation having excellent mechanical strength over room temperatures to high temperatures, excellent in heat resistance at an operation temperature of a TPV power ...
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JP4930671B2 |
To provide crystal-oriented ceramics composed of a polycrystal body of a perovskite type compound at least comprising Na and Nb, oriented at a high degree of orientation in the pseudo-cubic ä100} plane, having high relative density and ...
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JP4909462B2 |
A method and apparatus for annealing an integrated ferroelectric device ( 10 ) is disclosed in which the device ( 10 ) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defini...
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JP4906422B2 |
To provide a thermal gas flow sensor capable of reducing changes over time in resistance values of a heating resistor and a temperature measuring resistor and improving detection accuracy. In a detection element 1, protective films 30a, ...
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JP4897269B2 |
The detector has a bolometric membrane (2) whose resistivity varies with temperature. Pillars (3) have upper ends fixed directly on an intermediate frame (9). The frame has micropoints (7) whose tapered ends are in contact with the membr...
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JP4896515B2 |
To provide an infrared detecting element where an infrared detection property is kept to be favorable by improving an infrared absorption rate of an infrared absorption membrane even if the thickness of the infrared absorption membrane f...
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JP4889845B2 |
A ferroelectric ceramic for use as a pyroelectric, said ceramic having the composition: Pb1+ delta äÄ(Mg1/3Nb2/3)y (Zr1-xTix)1-yÜ1-zAzüO3 where: 0.05≥ delta ≥0 0.4≥ x>0 0.4≥ y> 0 0.05≥ z> 0 and wherein A is a cationic multi...
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JP4888908B2 |
A membrane structure element which includes a membrane base member and a metal wiring having improved bonding to the membrane base member and in which the membrane base member has improved flatness. It can be easily produced and has exce...
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JP2012037407A |
To provide a pyroelectric detector, pyroelectric type detecting device and electronic apparatus, which improves detection accuracy by improving pyroelectric effect in the pyroelectric body of a pyroelectric type detection element.Each of...
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JP2012037406A |
To reduce warpage of a substrate caused by stress induced in a multilayer structure.The multilayer structure comprises a substrate 20, a multilayer wiring structure (30, 40, 50) formed on a first principal surface of the substrate, a cav...
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JP2012038929A |
To provide a thermoelectric transducer, a magnetic head using the same, and a magnetic recording and reproducing device, capable of increasing output of a spin current thermoelectric transducer and thermoelectric conversion efficiency.Th...
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JP2012026861A |
To provide a pyroelectric detector, pyroelectric detection device, and electronic equipment for improving detecting precision by contributing even the rays of light which are not directly made incident to a light absorber to light detect...
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JP2012026860A |
To improve the detecting efficiency of a pyroelectric photodetector.A pyroelectric photodetector 200 includes: a lower electrode 234; a pyroelectric material layer 232 formed on the lower electrode; and an upper electrode 236 formed on t...
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JP4867792B2 |
To provide a wafer-level package structure and sensor device that can attain a simplified manufacturing process as well as attaining a low process temperature, and attain an improved yield in a bonding process. In a wafer-level package s...
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JP4865957B2 |
To provide a thermal infrared solid-state image sensor with a high infrared detection sensitivity and a short thermal time constant. In this thermal infrared solid-state image sensor provided with a detection part and a signal processing...
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JP4848826B2 |
To provide an infrared sensor with high performance. The infrared sensor comprises a base board 1, a temperature detection part 3 which absorbs infrared rays and detects a temperature change due to the absorption, and a heat insulation p...
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JP4839977B2 |
To provide an infrared sensor device capable of improving the S/N ratio. The infrared sensor device is provided with an infrared sensor IS for generating analog output values corresponding to temperature changes due to the absorption of ...
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JP4833382B2 |
A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper elec...
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JP2011232261A |
To enable the response speed and the sensitivity to be adjusted even after sealing a package base part with a cap.In a thermal type infrared-ray sensor in which a sensor element (1) having a light-receiving surface for receiving light of...
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JP4797383B2 |
To prevent the occurrence of piezoelectric noises or cracks, to facilitate manufacture, and to avert the occurrence of deficiency. A pyroelectric element 4 is supported by a sub-mount 7 only by a domain of an area equivalent to 9% to 16%...
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JP4792764B2 |
To maintain the quality of a wafer by preventing the rapid cooling of the wafer at the time of cooling it down after heating it, and to control the cooling time duration. The wafer 1 is polarized while being heated, and then is cooled. A...
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JP4780671B2 |
To provide a membrane structure element which can be easily fabricated and has high heat insulation and high quality, and to provide a method of manufacturing the same. In this manufacturing method, the membrane structural element is man...
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JP2011181725A |
To provide an anisotropic thermoelectric material having an anisotropy having a large Seebeck coefficient and obtaining a large crystal along a surface having the anisotropy for achieving a high radiation detection sensibility and a high...
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JP2011179953A |
To provide an infrared sensor having a structure using a pyroelectric element, and thinned.The thin-film pyroelectric element 14, made of lead zirconate titanate, is provided on a silicon substrate 2 and can be formed by a sol-gel method...
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JP4770549B2 |
To provide an infrared sensor allowing high sensitivity and high response speed and capable preventing deformation of a support part due to stress of the support part. The infrared sensor includes a base substrate 1, a temperature detect...
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JP4760351B2 |
To suppress the generation of a noise from a pyroelectric body thin film crystal. One end 8a of an L-shaped wire 8 is placed on an upper surface electrode contact 1a and simultaneously the other end 8b is placed on a lead upper end 6a. O...
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JP2011158436A |
To provide an infrared detection element and an infrared detector which can efficiently absorb incoming infrared ray and effectively utilizing infrared energy obtained.A pyroelectric element layer including pyroelectric elements 10, 11, ...
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JP2011155271A |
To provide a layer structure including a substrate, a platinum layer, and a ferroelectric layer which has enhanced adhesiveness between the platinum layer and the substrate.The layer structure includes a substrate S, a platinum layer PS,...
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JP4736307B2 |
To provide a semiconductor sensor capable of manufacturing a resistor more appropriately as a semiconductor having a substantially uniform carrier concentration, and to provide its manufacturing method. An SOI (silicon on insulator) subs...
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JP4710691B2 |
To provide an infrared sensor allowing high sensitivity and high response speed. The infrared sensor includes a base substrate 1, a temperature detection part 3 absorbing infrared rays and detecting temperature variation by the absorptio...
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JP4708561B2 |
A microcavity apparatus and systems for maintaining microcavity spacing over a macroscopic area. An application of this invention is a microscale generator. This microscale generator includes a first element for receiving energy; a secon...
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JP4700196B2 |
The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously ava...
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JP2011112508A |
To solve a problem that, since mounting members are small in number, and a heat capacity is small relative to a capacity in a pyroelectric infrared detector, when an abrupt temperature change is caused, a heat influence on a pyroelectric...
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JP2011112509A |
To solve the problem of a thermopile sensor infrared detector, wherein since the number of mounted members is small and heat capacity is small for the volume in the thermopile type infrared detector, thermal effects to a thermopile chip ...
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JP4687305B2 |
To provide a thermoelectronic power generating element (10) which can be arranged in fluid for heating, relating to a thermoelectronic element (10) which is equipped with an emitter (11) for emitting thermoelectrons and a collector (12) ...
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JP2011514659A |
One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the ...
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JP2011033393A |
To provide a semiconductor device technique shortening a processing time of Si anisotropic wet etching for forming a bridge structure by removing an Si (100) substrate itself under a membrane part and beam parts.The membrane part 51 and ...
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JP4633873B2 |
To accurately performable the temp. correction of an output signal from a pyroelectric infrared detector by placing both center points of a light receiving electrode of the detector and a light receiving electrode of a contained thermopi...
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JP4620962B2 |
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is...
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JP2011013224A |
To provide a manufacturing method for an infrared two dimensional image sensor which is able to enhance the detection sensitivity, and which is easy to integrate.On an infrared detection capacitance CF made of ferroelectric material film...
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JP2011013213A |
To provide an infrared sensor that obtains high temperature difference between heat-sensitive elements for infrared detection and temperature compensation, is miniaturized, and has an inexpensive structure.This infrared sensor includes a...
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JP4612932B2 |
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled wi...
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