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JP4008392B2 |
To provide a long-life and high-efficiency alkali metal thermoelectric generator. The alkali metal thermoelectric generator is characterized by comprising: a heater 1 that heats an alkali metal Na and holds it in a melted state; a genera...
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JP2007292461A |
To materialize a simple pyroelectric infrared sensor for detecting a central area and its peripheral area. Single elements 35a, 24a, 24b, and 35b are horizontally disposed/formed in order on a pyroelectric-body substrate 1. The single el...
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JP2007288923A |
To efficiently convert thermal energy into electrical energy. A PZT film 12 and an anode electrode 13 are disposed in a sealable case 11. Argon gas is supplied into the case 11 to form an gas atmosphere there, and then temperature change...
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JP3999300B2 |
To prevent the decline of the spontaneous polarization value of a ferroelectric thin film, particularly, a PbTiO3 ferroelectric thin film, when the thin film is formed on a single-crystal Si substrate by controlling stresses in the thin ...
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JP2007260867A |
To provide a multilayered structure for electron emission reducing a work function over a conventional limit by restraining development of deliquescence of alkali metal without requiring a special material such as a carbon nanotube. This...
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JP3987379B2 |
To provide an infrared solid-state image pickup element of which the resolution is improved without increasing the actual number of pixels. In an infrared sensor, an infrared absorbing part is supported on a temperature detector. A plura...
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JP2007258342A |
To provide a technique for attaining a large amount of power generation in a thermoelectronic power generation apparatus utilizing thermoelectrons each moving between a pair of electrodes through a tunnel phenomenon. The thermoelectronic...
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JP2007255929A |
To provide a pyroelectric infrared sensor capable of deformation and high in sensitivity. The flexible substrate 11 consists of polymeric material such as polyimide or polyethylene terephthalate, and the layer 13 which consists of vinyli...
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JP2007240456A |
To provide a pyroelectric temperature compensated infrared sensor of high reliability for temperature compensation with a temperature compensated electrode not reacting with a thermal change by an infrared ray from a detection area, and ...
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JP3974902B2 |
To provide a thermal infrared detecting element that can drive at low voltage and hardly generates noise by hardly changing output due to environmental temperature. The thermal infrared detecting element comprises an infrared detecting p...
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JP3974338B2 |
The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 mum having a principal surface, a first electrode layer 4 formed on the principal surface of the single...
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JP2007225398A |
To achieve a highly-sensitive thermal infrared sensor by improving the heat-insulating properties of a sensor pixel using a bipolar transistor. The bipolar transistor (402) and a constant current source (401) having temperature dependenc...
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JPWO2005078400A1 |
When manufacturing an infrared detector, first, an electrode is formed on an insulating layer formed on a silicon substrate. This electrode has a shape that matches the shape of the heat-sensitive resistance element that constitutes the ...
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JPWO2005078399A1 |
The infrared imaging device according to the present invention includes a plurality of pixel cells (1a-1d) arranged one-dimensionally or two-dimensionally, each pixel cell includes a heat-sensitive resistor, and the heat-sensitive resist...
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JP3966056B2 |
To provide a thermoelectric device having thermoelectric elements whose conversion efficiency between heat and electric energy is high. A heat exchange mechanism (12) having the thermoelectric elements (20) is provided in a casing (11). ...
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JP2007214196A |
To provide a multilayer structure and its manufacturing method capable of stably manufacturing at simple process. On a substrate 1, the multilayer structure comprises a surface layer 3 wherein at least one atom layer of alkaline metal at...
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JP2007214523A |
To provide a combined power generating device combining TPV (Thermo Photo Voltaic) power generation and thermoelectric power generation. The combined power generating device performs TPV power generation utilizing high-temperature burnin...
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JP3961457B2 |
To provide a thermal infrared photographing element having improved detection sensitivity of infrared rays, and to provide a method for manufacturing the thermal infrared imaging element. The thermal infrared imaging element comprises a ...
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JP3953156B2 |
To obtain a sensor having a long-life exothermic thin film element. The sensor comprises an Si substrate 10 having a hollow 102 and exothermic thin film element 104 supported on the surface of the Si substrate 101 surrounding the hollow ...
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JP3955437B2 |
When the temperature of pyroelectric film is increased from low to high near its phase transition temperature its ability to hold electrical charge on its surfaces diminishes, and the charge can be drawn as current through an external lo...
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JP3951359B2 |
To obtain a PZT-based piezoelectric crystal film improved in surface roughness so as to facilitate electrode impartment, also improved in dielectric loss, by forming an initial crystal layer consisting of a multiple oxide containing lead...
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JPWO2005062394A1 |
It is a bolometer in which a resistor having a positive coefficient of variation of resistance and a read-out integrated circuit (ROIC) are incorporated on the same substrate. Since the ROIC and the resistor showing a very large absolute...
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JP3944465B2 |
To provide a highly accurate and low-noise thermal type infrared detector of a new structure. A temperature sensor 103 of which the electric characteristics change according to temperature changes due to the absorption of infrared rays; ...
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JP2007518281A |
A vertical, monolithic, thin-film thermoelectric device is described. Thermoelectric elements of opposing conductivity types may be coupled electrically in series and thermally in parallel by associated electrodes on a single substrate, ...
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JP2007171058A |
To provide a low-cost infrared detector whose height has been reduced.The infrared detector A comprises: a printed-wiring board 10, where an infrared light receiving element 20, an IC component 21 in which the signal processing circuit o...
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JP2007165927A |
To provide a method of controlling internal stress in a polycrystalline silicon-germanium layer laminated on a substrate.The method of controlling internal stress in a polycrystalline silicon-germanium layer laminated on a substrate incl...
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JP2007157413A |
To provide a new and effective material for such electronic components as capacitors and sensors which has electric characteristics capable of reducing size and weight of an electronic apparatus and the like by using natural polymer mate...
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JP3928885B2 |
PURPOSE: To provide a thermomagnetic driving method and an actuator applicable in a wide range as well as enabling compact constitution. CONSTITUTION: The movable member of an impeller type rotor 32 formed of thermosensitive magnetic mat...
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JP2007139660A |
To provide a multi-element thermopile module for detecting the temperature of an object having an infrared ray.This module equipped with a thermistor having a built-in thermopile sensor package, a thermistor having a built-in thermopile ...
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JP3924460B2 |
To solve the problem that a platinum resistance bulb increases in size for higher resistance and easier use and its use as a temperature sensor is limited since, although the resistance value of the platinum resistance bulb is normally 1...
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JP3922463B2 |
To provide an infrared light radiation device capable of performing measurement of a broad band without being affected by absorption of a substrate. The infrared light radiation device comprises a photo-conductive film 22 for receiving p...
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JP2007127496A |
To provide a thermal infrared detector which has high infrared measurement accuracy, is small, is lightweight, and is inexpensive, by cutting off infrared radiation incoming from the surroundings that becomes a disturbance.The infrared d...
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JP2007511747A |
A thermal sensor structure having one level for an infrared detecting pixel including the sensor associated electronics. The electronics displace a small area thereby having little effect on the fill area of the pixel relative to a level...
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JP3911957B2 |
To provide a high-sensitivity infrared detector that can be manufactured relatively easily and has a high infrared absorption rate, and its manufacturing method. This high-sensitivity infrared detector is provided with an infrared detect...
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JP2007101213A |
To provide a semiconductor device capable of highly precise temperature detection while taking the shape of monolithic integrated circuit, an infrared sensor provided with the semiconductor device and the manufacturing method of the semi...
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JP3891603B2 |
To attain a high residual spontaneous polarization by shifting the compositional ratio of Bi/Ti in a ferroelectric thin film of ferroelectric crystal containing Bi, Ti and O as constitutive elements from stoichiometric composition thereb...
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JP2007051915A |
To provide an infrared sensor easy to be manufactured, capable of enhancing mechanical strength, and capable of attaining high sensitivity and a high response speed.This infrared sensor includes a base substrate 1 of a rectangular plate ...
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JP2007040702A |
To provide a semiconductor IC, a wireless IC tag and a sensor which insures stable operation, can be compact/thin sized, and inhibits camouflage of sensor on temperature administration.To solve the problem, the semiconductor IC of this i...
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JP3881657B2 |
To provide a manufacturing method for a pyroelectric type infrared detecting element capable of patternizing finely an organic pyroelectric body excellent in reactivity to enhance detection sensitivity. In this manufacturing method for t...
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JP3875240B2 |
To provide an electronic component which can accurately ensure an operating space for an electronic machine element having an operating part and can maintain a mechanical strength of a substrate, a lamination module using the electronic ...
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JP2007015377A |
To provide a manufacturing method of a functional film capable of easily peeling the functional film formed on a film forming substrate from the film forming substrate.The manufacturing method of the functional film comprises a process (...
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JP2007005589A |
To enable the practical use of a thermionic generating device (10) functioning in a low temperature region in a thermionic generator by connecting a plurality of thermionic generating devices (10) in series to increase the output voltage...
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JP3862080B2 |
To provide a thermal infrared detector, capable of preventing a image flow from generating even in an action of a high frame rate, and to restraint increase in 1/f noise. The detector is made to adapt to the action of the high frame rate...
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JP2006343229A |
To provide an image sensor that is useful for size reduction and cost reduction of a system, and simplification of image processing between two optical images, in an optical sensor system that images two wave regions which are a waveleng...
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JP3859479B2 |
To provide a bolometer type infrared detector capable of restraining a temperature drift caused by self-heating, and free from characteristic deterioration by a noise. In this bolometer type infrared detector comprising at least a suppor...
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JP3852011B2 |
To thermally insulate a heat sensitive part, and to stoutly support the heat sensitive part. A substrate side insulation layer (50) having a holding space (12) for hollowly holding the heat sensitive part (20) is stacked on a substrate (...
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JP3849527B2 |
A method of producing plural device chips from a thin plate of a pyroelectric material comprises the following steps. First, plural device-forming regions each having an electrode and a circuit pattern for electrically connecting the ele...
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JP3845718B2 |
To provide a new method for controlling crystallinity, orientation and surface smoothness of a bismuth group layered perovskite SrBi2Ta2O9 thin film by irradiation of an ultraviolet ray. A c-axis orientation bismuth group layered perovsk...
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JP2006300816A |
To provide an infrared detector generating no inclination in a detection part or the like by an internal stress, and also to provide an infrared solid imaging device including the same.This substantially rectangular infrared detector for...
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JP3838359B2 |
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode,...
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