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JP2004349398 |
To provide a thermoelectronic conversion element having a small heat loss, and to provide a thermoelectronic conversion device using the same.The thermoelectronic conversion element comprises at least a first electrode, a second electrod...
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JP2004345939 |
To provide a lead titanate zirconate epitaxial film with high performance.The lead titanate zirconate film has a chemical composition represented by general formula: Pb1-xLnxZryTi1-yO3 (wherein Ln is lanthanum, lanthanoids, niobium, calc...
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JP2004340719 |
To provide an infrared ray sensor for improving especially strength of an infrared ray absorbing structure concerning the infrared ray sensor of a thermal type.This infrared ray sensor of the thermal type includes an infrared detecting p...
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JP2004340977 |
To provide a micromechanical sensor element where a pit for thermally separating the sensor element from a silicon semiconductor crystal is formed under the sensor element by etching in a manner enabling the high density of sensor elemen...
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JP2004335599 |
To provide a thermoelectric element which is improved in element properties reducing heat transmission made by lattice vibrations.The thermoelectric element is equipped with a cathode (21) and an anode (22) which are arranged in face to ...
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JP2004317152 |
To provide a highly accurate and low-noise thermal type infrared detector of a new structure.A temperature sensor 103 of which the electric characteristics change according to temperature changes due to the absorption of infrared rays; a...
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JP2004298348 |
To provide a fingerprint detecting device that has a sufficient mechanical strength against wear etc., and, at the same time, can obtain high detection precision, and to provide a method of manufacturing a fingerprint detecting device.Ra...
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JP2004296118 |
To provide a thermoelectric converter in which a high thermoelectric conversion efficiency can be obtained.The converter comprises a dehydrogenation reactor for generating hydrogen and acetone by performing a dehydrogenation endothermic ...
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JP3604130 |
To enlarge the occupied area a heat absorption layer by enlarging a fill factor rate without lowering the strength of a diaphragm, and resultantly to increase sensitivity and enlarge an output signal. This element is equipped with a sili...
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JP2004282089 |
To provide a piezoelectric or pyroelectric functional element satisfying requirements of high resolution, high density and high integration, and to provide an actuator and a sensor utilizing it, and an apparatus employing them.A piezoele...
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JP2004281711 |
To provide a piezoelectric or pyroelectric functional element satisfying requirements of high resolution, high density and high integration, and to provide an actuator, a sensor, or the like, utilizing it.A thin film 1 of a piezoelectric...
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JP2004281742 |
To provide a semiconductor element capable of integrating an MFMIS structure having a lower electrode with an integrated circuit, a semiconductor sensor and a semiconductor memory element.A γ-Al2O3 single-crystal film 2 grown through ep...
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JP2004271386 |
To provide a titanium bolometer thermal infrared detector capable of increasing a resistance temperature coefficient and enhancing infrared detection sensitivity, and a manufacturing method therefor.In this titanium bolometer thermal inf...
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JP2004257885 |
To provide a multi-element type infrared detector capable of preventing crosstalk and improving in wave length selectivity, as well as increasing in sensitivity by making the infrared ray incident on photo receiving parts effectively.The...
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JP3589997 |
To provide a heat type, non-cooling type infrared sensor with high sensitivity and at low cost. An infrared detecting pixel is provided with an infrared absorbing parts 201, 202, and a thermoelectric converting part 9 which converts a ch...
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JP2004239708 |
To provide an infrared detection device and its manufacturing method which improves remarkably infrared detection sensitivity by suppressing heat dissipation from an infrared detection part.This infrared detection device is constituted o...
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JP2004241398 |
To provide a semiconductor sensor capable of manufacturing a resistor more appropriately as a semiconductor having a substantially uniform carrier concentration, and to provide its manufacturing method.An SOI (silicon on insulator) subst...
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JP2004235315 |
To provide a manufacturing method of a semiconductor sensor capable of optimally suppressing the variety of electric characteristics of a resistor, consisting of a semiconductor and detecting a predetermined physical quantity.The adding ...
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JP2004233314 |
To provide a thermal type infrared solid-state imaging element of less effect of voltage drop caused by the resistance of a drive line and less signal drift caused by fluctuation in element temperature or power supply voltage.A second co...
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JP2004219123 |
To provide a temperature measuring probe capable of shortening the measuring time by equilibrating the temperature of a metal cap with the temperature of a temperature sensing element in a short time, and having excellent electric insula...
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JP2004219080 |
To provide a semiconductor sensor for appropriately coping with the avoidance of a decrease in detection precision by a change in resistance and the simplification of a manufacturing process when a semiconductor is used as a resistor.A s...
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JP2004193437 |
To provide an end face sensor device which has flexibility without a restriction in its shape and can form various devices of arbitrary shapes, and to provide its manufacturing method.The end face of a wire-shaped body of this end face s...
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JP2004183078 |
To solve the problem associated with formation of a laminated thin film through ion beam irradiation wherein the obtained thin film is electrically charged and causes film breakage or oxidation-reduction reaction unnecessary for keeping ...
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JP2004151059 |
To provide an infrared detection element attaining a high sensitivity, high resolution, and also minimization, capable of effectively useable for a non-cooled infrared camera for example, by making the electrical resistivity small as muc...
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JP2004151054 |
To provide a thermal infrared detector, capable of preventing a image flow from generating even in an action of a high frame rate, and to restraint increase in 1/f noise.The detector is made to adapt to the action of the high frame rate ...
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JP2004152922 |
To reduce the inclination of composition in the thickness direction of a film without dropping a film manufacturing speed extremely in the manufacturing method of a ferroelectric film.In the manufacturing method of the ferroelectric film...
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JP2004150741 |
To provide a thermoelectron heat pump with high efficiency used for a cooling device for an electronic part, a photonic part or cooling equipment such as a refrigerator, a freezer, a cooler, an air conditioner, and a thermoelectron heat ...
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JP2004147397 |
To directly convert heat energy into electric energy without causing a pressure difference between the high temperature side and the low temperature side of an electrolyte.In a container 107 which forms a sealed space, a solid electrolyt...
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JP2004144715 |
To provide an infrared detection apparatus of a simple constitution for measuring a wide temperature range, reducing the effects of variations in an operation point, and achieving a low cost.The infrared detection apparatus is provided w...
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JP2004140288 |
To provide a method and a device for manufacturing an electrode of higher electron emission efficiency and superior durability, and to provide a thermal power generation device using the electrode.An electrode manufacturing device 200 co...
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JP3545850 |
To provide a ferroelectric thin film element provided with electrode material wherein film characteristic fatigue and leak current generation are little and adhesion to ferroelectric material is excellent. In a ferroelectric thin film el...
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JP2004117216 |
To provide an installing structure of an infrared detector, capable of lowering manufacturing cost.An element-installing part 11 for installing a pyroelectric element is provided on the upper surface. In a synthetic resin mold 10, having...
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JP2004101283 |
To secure the function of another detecting element even if one detecting element is broken and to simplify a manufacturing process.A metal oxide 2 is divided into a plurality of parts, whereby a plurality of different information pieces...
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JP3538188 |
To provide a high-reliability thermosensitive flow rate detection element having high detection accuracy and its manufacturing method by specifying the position of an edge part of a diaphragm part by a dummy pattern for inspecting geomet...
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JP2004093535 |
To provide a thermal type infrared solid state imaging device, capable of increasing the density of detector array, having least sensitivity unevenness and thermal crosstalks between pixels, and being small in size and low in cost, and t...
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JP3534103 |
To provide a low-priced and compact infrared sensor with high- sensitivity by applying a bolometer material having hysteresis in resistance temperature characteristics to the infrared sensor. A bolometer heat-sensitive part, which has hy...
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JP3533332 |
To suppress the static electricity and oxidation caused by water for processing substrates in manufacturing electronic components. The method has a step of processing a substrate having metal film conductors with water in which 3.5≤pHâ...
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JP3523588 |
To manufacture a semiconductor device where heat detectors can be disposed at high density by a method having superior in matching with a silicon mass-production process. This semiconductor device includes a silicon substrate 10, a heat-...
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JP2004055984 |
To provide a compound power generation element and a compound power generation system in which power generation outputs of a thermionic power generator, and a plurality of alkali metal thermoelectric transducers and a flow of heat are co...
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JP3517876 |
To control a crystal orientation of a ferroelectric thin film in accordance with a use of a ferroelectric thin film element. A lower electrode 71 including at least iridium is formed on an undercoat layer 6 essentially consisting of zirc...
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JP3519720 |
To provide an electronic device, and its manufacturing method, in which a cap body for sustaining vacuum is provided for each cell utilizing an existing fabrication process of electronic device. An Al film 151 is formed on a wafer 150 fo...
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JP2004037297 |
To provide an infrared sensor having a new structure and easily manufactured.A via hole 12 is formed in a silicon substrate 11. Insulative films 14, 15 are disposed at an opening of the via hole 12 and form a membrane. An infrared absorp...
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JP2004037291 |
To provide a high-performance pyroelectric infrared sensor for eliminating a thermal process causing quality degradation when manufactured and a thin film forming process using a wet process.The pyroelectric infrared sensor is provided w...
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JP3514207 |
To provide a small ferroelectric thin film element which has a superior performance and is easy to process cheaply, a sensor using the same and a method of manufacturing the ferroelectric thin film element. Buffer layers are formed on an...
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JP3513048 |
To obtain a thermosensitive flow-rate sensor whose sensitivity is high and reliability is high and to obtain its manufacturing method. This flow-rate sensor is provided with a flow-rate detecting element 21 in which a heating resistor 4 ...
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JP2004006814 |
To reduce 1/f noise of a resistance change material in a bolometer type infrared ray sensor and to improve S/N of the infrared ray sensor.This method for manufacturing the resistance change material comprises the process of forming a thi...
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JP2003347609 |
To provide an apparatus structure which improves the figure of merit of an apparatus utilizing Nernst effect and Seebeck effect. The apparatus comprises a plurality of elements which are made of a thermoelectric material and each have at...
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JP2003344155 |
To provide an infrared sensor capable of relaxing stress from a protective film to a thermoelectric converter. The infrared sensor includes a thermoelectric converter 5 for converting heat into electricity, and the protective film 6 for ...
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JP2003344151 |
To provide a thermal infrared sensor and an infrared sensor array having a high detection sensitivity to infrared rays of a predetermined wavelength band. The thermal infrared sensor for detecting the infrared rays of the predetermined w...
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JP2003344152 |
To provide an infrared solid-state image pickup element of which the resolution is improved without increasing the actual number of pixels. In an infrared sensor, an infrared absorbing part is supported on a temperature detector. A plura...
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