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WO/2020/260000A1 |
The invention provides a multilayer superconductive article (600) extending in a longitudinal direction (LD), the article comprising: • - a substrate layer (610) extending in the longitudinal direction; • - a superconductive layer (6...
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WO/2020/257772A1 |
Entanglement among qubits can be generated using "rasterized" and interleaving techniques. A circuit can include a resource state generator that generates one resource state per clock cycle, with each resource state having a number of en...
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WO/2020/254226A1 |
A quantum computing device (300) is formed using a first chip (302) and a second chip (306), the first chip having a first substrate (303), a first set of pads (312 A,B), and a set of Josephson junctions (304) disposed on the first subst...
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WO/2020/254224A1 |
A quantum computing device (300) is formed using a first chip (302) and a second chip (306), the first chip having a first substrate (303), a first set of pads (312 A,B), and a set of Josephson junctions (304) disposed on the first subst...
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WO/2020/248517A1 |
Disclosed is a method for treating a SrTiO3 substrate, the method comprising the following steps: placing an untreated SrTiO3 substrate (100) in a vacuum chamber (20), wherein the pressure intensity of the vacuum chamber (20) is lower th...
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WO/2020/246112A1 |
The present invention provides a parametric amplifier that does not require use of a Josephson superconductivity junction, the parametric amplifier being such that manufacturing thereof is relatively simple, and being usable as-is even i...
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WO/2020/240412A1 |
The present disclosure relates to a one-electrode cell (10) and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric. In a device constituted by on...
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WO/2020/221634A1 |
The present invention is in the field of apparatuses for tape lamination, in particular for laminating superconductor tapes. The apparatus for laminating tapes comprises a solder bath, a first alignment unit containing slits having diffe...
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WO/2020/221510A1 |
On a first superconducting layer (316) deposited on a first surface of a substrate (312), a first component of a resonator is pattered. On a second superconducting layer (326) deposited on a second surface of the substrate (312), a secon...
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WO/2020/215610A1 |
A magnetic tunnel junction device of a magnetic random access memory, comprising a reference layer (13), a tunneling dielectric layer (14), and a memory layer (15) stacked in sequence from bottom to top, wherein the memory layer (15) is ...
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WO/2020/219578A1 |
Embodiments disclosed herein include a resonator for use in quantum computing. The resonator can include a housing that is disposed along a resonator axis. The housing can have a first portion extending from a housing distal end to near ...
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WO/2020/216575A1 |
A tunable qubit device includes a tunable qubit, the tunable qubit including a superconducting quantum interference device (SQUID) loop. The tunable qubit device further includes a superconducting loop inductively coupled to the SQUID lo...
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WO/2020/213596A1 |
[Problem] The present invention addresses the problem of providing a quantum bit cell having an easy-to-integrate structure, and a quantum bit integrated circuit. [Solution] This quantum bit cell is characterized by comprising: a spin to...
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WO/2020/212194A1 |
The present invention is in the field of sealed high-temperature superconductor tapes. It relates to a superconducting tape comprising a substrate, a buffer layer, a superconductor layer, wherein the substrate, the buffer layer and the s...
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WO/2020/212105A1 |
A fluxonium qubit includes (400) a superinductor (402). The superinductor includes a substrate (404), and a first vertical stack (406) extending in a vertical direction from a surface (406) of the substrate (404). The first vertical stac...
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WO/2020/212437A1 |
A quantum computing device includes a first chip having a first substrate and one or more qubits disposed on the first substrate. Each of the one or more qubits has an associated resonance frequency. The quantum computing device further ...
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WO/2020/208499A1 |
The present invention relates to a superconductor comprising a ferroelectric with a very high dielectric constant at temperatures from below to above room temperature, in which a spontaneous dynamic alignment of the dipoles of the ferroe...
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WO/2020/207951A1 |
A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a se...
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WO/2020/201414A1 |
In summary, the invention proposes using a finished conductor arrangement (20; 50) for producing an Nb3Sn superconductor wire (33) in accordance with the RRP principle, in which arrangement hexagonal RRP subelements (1a; 60a) are combine...
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WO/2020/198581A1 |
Systems and methods for performing bosonic quantum error correction (QEC) using Gottesman-Kitaev-Preskill (GKP) states are provided. An ancilla quantum mechanical oscillator is used to probe Gaussian noise experienced by a data quantum m...
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WO/2020/197894A1 |
A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen...
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WO/2020/193415A1 |
A system (100) for controlling temperature of a persistent current switch (120) operating in a background magnetic field includes a heat exchanger (138), a loop tube (135), a ball valve (245) and multiple electromagnets (251, 252). The h...
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WO/2020/197892A1 |
A structure including a metal nitride layer is formed on a workpiece by preconditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in ...
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WO/2020/185336A1 |
A superconducting structure is provided that comprises a first superconducting device (12) coupled to a second superconducting device (22) employing a plurality of superconducting bump bond structures (30). Each of the plurality of super...
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WO/2020/185346A1 |
A buffer layer (104) can be used to smooth the surface roughness of a galvanic contact layer (102) (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered ...
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WO/2020/180762A1 |
Technologies for tuning a resistance of tunnel junctions such as Josephson junctions are disclosed. In the illustrative embodiment, a Josephson junction is heated to 85 Celsius, and an electric field is applied to the Josephson junction....
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WO/2020/179554A1 |
The photon detection device according to one embodiment of the present invention comprises: a superconductive photon detection element array (10) in which a plurality of superconductive photon detection elements are disposed; a plurality...
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WO/2020/180885A1 |
A nonlinear parametric device includes a planar substrate and a millimeter-wave resonator formed from superconductive material deposited on the planar substrate. When the resonator is cooled below a critical temperature, it exhibits nonl...
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WO/2020/178657A1 |
A method includes forming a capacitor pad (304A, 304B) for a nonlinear resonator. The method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls wit...
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WO/2020/180902A1 |
Technologies for resource-efficient quantum error correction are disclosed. A quantum computer may include physical gate qubits, capable of general quantum gate operations such as single-qubit operations and nearest-neighbor two-qubit op...
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WO/2020/176462A1 |
A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerh...
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WO/2020/176251A1 |
Superconducting circuits and memories that use a magnetic Josephson junction (MJJ) device as a pi inverter are disclosed. The MJJ device includes superconducting layers configured to allow a flow of a supercurrent through the MJJ device....
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WO/2020/170392A1 |
Provided is a quantum computing device having a reduced number of electrodes. The quantum computing device is provided with: a plurality of superconducting lines which are arranged so as to form at least two unit lattices in plan view, a...
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WO/2020/169503A1 |
A superconducting progressive wave parametric amplifier comprising a chain (CES) of superconducting elements (JJ, SQ) having non-linear kinetic inductance connected in series, said superconducting elements being deposited onto a substrat...
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WO/2020/172201A2 |
A 2nd generation high temperature superconductor wire that prevents mechanical destruction from the wire edge due to slitting. A 2G HTS wire according to embodiments of the present invention has a structure that prevents mechanical destr...
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WO/2020/167970A1 |
A superconductor device includes a low-dimensional material with a critical temperature higher than a critical temperature corresponding to a bulk form of the lowdimensional material. The low-dimensional material can include shape and st...
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WO/2020/167318A1 |
A method of fabricating a device (12), comprising: forming portions of electronic circuitry and a shadow wall structure (13) over a substrate, and subsequently depositing a conducting layer (5) over the substrate by angled deposition of ...
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WO/2020/164864A1 |
A quantum device includes a first set of protrusions (304) formed on a substrate (302, 302A) and a second set of protrusions formed on a qubit chip (310). The quantum device also includes a set of bumps (308) formed on an interposer (306...
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WO/2020/162018A1 |
A superconducting wire according to one embodiment of the present invention is provided with a base material, an intermediate layer formed on the base material, a superconducting layer formed on the intermediate layer, and a protection l...
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WO/2020/162993A1 |
The various embodiments described herein include methods, devices, and systems for operating superconducting circuits. In one aspect, an electric circuit includes: (1) a superconductor component having a first terminal at a first end and...
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WO/2020/163005A1 |
A three-dimensional memory device can include a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectri...
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WO/2020/160496A1 |
The present disclosure relates to a qubit measurement and control system (e.g., including a qubit calibration device) that may include: a qubit processing unit including circuitry configured to process one or more qubits, and an adjustab...
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WO/2020/159695A1 |
A bistable device allows supercurrent to flow when functioning in one regime, wherein magnetization directions of different magnetic layers are antiparallel, but restricts supercurrent when switched to function in a resistive regime, whe...
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WO/2020/153876A1 |
The invention relates to electrical current conductors. A bundled electrical current conductor comprising N ≥ 1 individual identical separate unconnected thin constituent elements which are collected into a stack or bundle and are encl...
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WO/2020/154209A1 |
In embodiments of the technology, a hollow shadow wall (13) is formed of a base lying on a surface of a substrate (10), and one or more side walls connected to the base. The one or more side walls extend away from the surface of the subs...
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WO/2020/153875A1 |
The invention relates to materials science and can be used for creating articles having given properties. A bundled material contains a number Ν≥1 (where N is a whole number) of individual thin identical separate unconnected constitue...
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WO/2020/150348A1 |
Parametrically pumped four-wave mixing is a key building block for many developments in the field of superconducting quantum information processing. However, undesired frequency shifts such as Kerr, cross-Kerr and Stark shifts inherent w...
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WO/2020/150020A1 |
A method of fabricating a device, wherein the device comprises a plurality of lengths of material (SE/SU) and at least one junction joining two or more of the lengths of material. In a masking phase, a mask (102) is formed on an underlyi...
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WO/2020/150021A1 |
In a masking phase, a first segment of an amorphous mask is formed on an underlying layer of a substrate. The first segment comprises a first set of trenches exposing the underlying layer. In the masking phase, a second segment of the am...
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WO/2020/131314A1 |
An integrated circuit is provided that comprises a first thermal sink layer, a first ground plane associated with a first set of circuits that have a first operational temperature requirement, a first thermally conductive via that couple...
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